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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMN48XP,115

Name: PMN48XP,115
Brand: Nexperia USA Inc.
SKU: PMN48XP,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMN48XP,115

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-74, SOT-457

Datasheet:: PMN48XP,115.pdf

Description:: MOSFET P-CH 20V 4.1A 6TSOP

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Product details

Overview

PMN48XP,115 from Nexperia is a P-channel enhancement-mode Trench MOSFET in SOT457 (TSOP6) package, rated for −20 V drain-source voltage, −4.1 A continuous drain current at 25 °C, and 48 mΩ typical R_DS(on) at V_GS = −4.5 V and I_D = −2.4 A. It serves as a high-side load switch or high-speed line driver in compact power management circuits.

For engineers reviewing the PMN48XP,115 datasheet, PMN48XP,115 pinout, PMN48XP,115 application, or PMN48XP,115 equivalent, key selection criteria include its low R_DS(on), fast switching (t_d(on) = 15 ns, t_f = 22 ns), thermal resistance of 84 K/W (with 6 cm² drain pad), gate threshold of −1.0 V typ, and suitability for relay driving and industrial control logic-level switching.

Technical Context

This device uses Trench MOSFET technology to achieve low on-resistance and fast switching performance in a 6-lead surface-mount package. Its P-channel architecture enables high-side configuration without level-shifting circuitry, and its −1.0 V typical V_GS(th) ensures reliable turn-on with standard 3.3 V or 5 V logic.

The SOT457 package integrates four drain terminals (pins 1, 2, 5, 6) for enhanced thermal and current handling, while pin 3 is gate and pin 4 is source - enabling low-inductance layout and efficient PCB heat spreading via the large drain pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V - Maximum blocking voltage for 24 V rail and automotive 12 V systems with margin.
I_D (continuous)	−4.1 A @ T_amb = 25 °C - Supports medium-power loads such as solenoids, LED arrays, or sensor biasing.
R_DS(on)	48 mΩ typ @ V_GS = −4.5 V, I_D = −2.4 A - Minimizes conduction loss (<115 mW at 2.4 A) and self-heating.
t_d(on)/t_f	15 ns / 22 ns - Enables >10 MHz switching in PWM-controlled DC-DC or motor gate drivers.
V_GS(th)	−1.0 V typ - Ensures full enhancement with 3.3 V GPIO or microcontroller outputs.
Q_G(tot)	8.7 nC typ - Low gate charge reduces drive strength requirements and switching losses.
R_th(j-a)	84 K/W @ 6 cm² drain pad - Enables 530 mW continuous dissipation at ambient without heatsink.

Pinout & Package

SOT457 (TSOP6) plastic surface-mounted package with 6 leads; features four parallel drain terminals (pins 1, 2, 5, 6) for low thermal resistance and high-current routing, single gate (pin 3), and single source (pin 4).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Four paralleled terminals reduce package inductance and spread heat across PCB copper area.
3	Gate (G)	Control input; requires <8.7 nC charge for full turn-on; compatible with 3.3 V/5 V logic.
4	Source (S)	Reference node for gate drive; tied to system high-side rail in load-switch configuration.

Key Features

Feature	Design Value
P-channel Trench MOSFET architecture	Enables high-side switching without external level shifters or bootstrap circuitry.
48 mΩ R_DS(on) at −4.5 V V_GS	Reduces conduction loss by >30% vs. comparable SOT-23 P-MOSFETs at same current.
15 ns turn-on delay + 22 ns fall time	Supports clean edge transitions in digital interface buffers and pulse-width modulated loads.
Four-drain-pin layout	Lowers effective package resistance and improves thermal coupling to PCB copper pour.
−1.0 V typical gate threshold	Guarantees robust turn-on with standard microcontroller I/O, even under supply droop.

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Driving 12 V/24 V electromagnetic relays in PLC I/O modules and industrial controllers.

IC Role / Device Role / Timing Role: High-side switch controlling relay coil current path; operates in static on/off mode with occasional fast transitions.

Use Value: Low R_DS(on) limits coil voltage drop to <100 mV at 2 A, ensuring reliable relay pull-in; four drain pins prevent localized PCB heating during sustained operation.

Use Scenario: Transmitting TTL/CMOS-level signals across noisy factory-floor cables or backplanes.

IC Role / Device Role / Timing Role: Active pull-up stage in open-drain bus interface, providing fast edge rates and low output impedance.

Use Value: 22 ns fall time ensures signal integrity up to 20 Mbps; low gate charge allows direct MCU GPIO drive without buffer amplification.

High-Side Load Switch

Switching Power Supply Control

Use Scenario: Enabling/disabling power to peripheral subsystems (e.g., sensors, transceivers) in battery-powered IoT nodes.

IC Role / Device Role / Timing Role: Controlled high-side pass element; switched at system startup/shutdown or fault recovery.

Use Value: −1.0 V V_GS(th) guarantees full enhancement at 3.3 V supply; 55 mΩ max R_DS(on) keeps voltage drop below 130 mV at 2.4 A load.

Use Scenario: Synchronous rectification or auxiliary switching in buck-derived DC-DC converters for embedded power rails.

IC Role / Device Role / Timing Role: Low-side or high-side switching element in non-isolated point-of-load regulators.

Use Value: 8.7 nC Q_G(tot) minimizes gate drive loss; 130 pF C_oss supports stable operation at 500 kHz–1 MHz switching frequencies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2053LK-7	−20 V, −3.9 A, 52 mΩ R_DS(on), SOT-23 package, single drain terminal	Lower current rating and higher R_DS(on); limited thermal capability due to smaller footprint	Acceptable only for <2 A loads with ample board copper; not suitable for high-duty-cycle relay driving.
SI2305DS-T1-GE3	−20 V, −4.1 A, 55 mΩ R_DS(on), SOT-23 package, −1.2 V V_GS(th) min	Higher gate threshold requires ≥4.5 V drive for guaranteed turn-on; no multi-drain thermal advantage	Use only when board space is critical and gate drive voltage is stable ≥4.5 V; avoid in 3.3 V logic systems.

Compared with DMN2053LK-7 and SI2305DS-T1-GE3, PMN48XP,115 delivers superior thermal performance via its quad-drain SOT457 layout and lower R_DS(on), making it the preferred choice for sustained 2–4 A high-side switching where reliability and efficiency are prioritized over minimal footprint.

Availability

PMN48XP,115 is available at Aetrix Electronics and suitable for industrial control systems, programmable logic controller (PLC) I/O modules, and battery-powered IoT load switching requiring stable component supply and long-term manufacturability.

Supply support for PMN48XP,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and analog portfolio.

The PMN48XP belongs to Nexperia's TrenchMOS P-channel logic-level FET product line, engineered specifically for space-constrained, thermally demanding high-side switching in industrial and consumer power management.

FAQ

What is the maximum safe operating junction temperature for PMN48XP,115?

The absolute maximum junction temperature is 150 °C per the datasheet limiting values table. Operation above this threshold risks permanent parametric shift or failure. Derating curves in Figure 2 show that continuous drain current must be reduced to −2.5 A at 100 °C ambient, assuming standard FR4 mounting with 6 cm² drain pad.

Can PMN48XP,115 be driven directly from a 3.3 V microcontroller GPIO?

Yes - its typical gate threshold voltage is −1.0 V, with minimum −0.75 V at 25 °C. At 3.3 V logic high, V_GS = −3.3 V exceeds the required −2.5 V for full enhancement, delivering ≤55 mΩ R_DS(on). Gate charge of 8.7 nC ensures fast turn-on without external driver circuitry.

Why does PMN48XP,115 have four drain pins?

The four drain terminals (pins 1, 2, 5, 6) reduce total package resistance and inductance while improving thermal conduction from die to PCB copper. This layout lowers R_th(j-a) to 84 K/W (vs. >200 K/W in SOT-23), enabling higher continuous current and better reliability in high-duty-cycle applications.

Is PMN48XP,115 suitable for automotive applications?

No - the datasheet explicitly states this part is "non-automotive qualified" and lacks AEC-Q101 qualification, automotive-grade screening, or extended temperature validation beyond −55 °C to +150 °C. It is intended for industrial, consumer, and computing applications only.

PMN48XP,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-74, SOT-457

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 55mOhm @ 2.4A, 4.5V

Vgs(th) (Max) @ Id:: 1.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 1000 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 530mW (Ta), 6.25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

PMN48XP,115 FAQ

1.How can I place an order for PMN48XP,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PMN48XP,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMN48XP,115 reliable?

The price and inventory of PMN48XP,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMN48XP,115 is usually 5 days.

3.What payment methods are accepted for PMN48XP,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMN48XP,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMN48XP,115?

PMN48XP,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMN48XP,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMN48XP,115?

For technical support, including PMN48XP,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMN48XP,115 requirements.

6.How does Aetrix verify that PMN48XP,115 is sourced from the original manufacturer or authorized distributors?

All PMN48XP,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMN48XP,115 meets industry standards.

7.What is the process for return or replacement of PMN48XP,115?

All PMN48XP,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMN48XP,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMN48XP,115 part is unused and in its original packaging.

Return procedure for PMN48XP,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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