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NXP Semiconductors PMN49EN,135
- Part No.:
- PMN49EN,135
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- SC-74, SOT-457
- Datasheet:
-
PMN49EN,135.pdf
- Description:
- MOSFET N-CH 30V 4.6A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:6,436
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Product details
Overview
PMN49EN from Nexperia is a logic-level N-channel enhancement-mode TrenchMOS FET in TSOP6 (SOT457) package, designed for high-speed switching in battery-powered systems. It delivers RDS(on) ≤ 47 mΩ at VGS = 10 V and ID = 2 A, supports VDS up to 30 V, and features QGD = 1.6 nC (typ) for efficient gate drive in DC-DC converters and load switches.
For engineers reviewing the PMN49EN datasheet, PMN49EN pinout, PMN49EN application, or PMN49EN equivalent, this page provides verified electrical parameters, thermal behavior at solder point, gate charge profile, source-drain diode recovery characteristics, and validated alternatives for battery management and power distribution designs.
Technical Context
The PMN49EN uses TrenchMOS technology to achieve low on-resistance with logic-level gate drive compatibility (VGS(th) = 1–2 V typ at 25 °C). Its gate threshold remains functional down to −55 °C and up to 150 °C, enabling operation across automotive and industrial temperature ranges.
Dynamic performance is defined by fast switching (td(on) = 4.1 ns, tf = 4.9 ns), low output capacitance (Coss = 100 pF), and controlled reverse recovery (trr = 19.25 ns, Qr = 0.73 nC), making it suitable for synchronous rectification and high-frequency PWM control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - supports 24 V nominal bus systems with margin for transients. |
| RDS(on) | 40–47 mΩ at VGS = 10 V, ID = 2 A - enables <100 mW conduction loss at 2 A continuous current. |
| ID | 4.6 A continuous at Tsp = 25 °C - rated for compact PCB layouts with moderate copper area. |
| QGD | 1.6 nC typical - minimizes Miller-induced switching delay and improves turn-off controllability. |
| trr | 19.25 ns - reduces body-diode conduction loss and EMI in hard-switched topologies. |
| Rth(j-sp) | 70 K/W - defines thermal path from junction to solder point, critical for board-level thermal design. |
| VGS(th) | 1.5 V typical at 25 °C - ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIOs. |
Pinout & Package
PMN49EN is housed in a plastic surface-mounted TSOP6 (SOT457/SC-74) package with exposed drain pads on pins 1, 2, 5, and 6 for enhanced thermal and current handling. The 6-pin layout supports compact routing and dual-side PCB assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Parallel-connected drain terminals reduce effective RDS(on) and improve thermal spreading to PCB copper. |
| 3 | Gate (G) | Control input requiring <20 V absolute max; low Ciss (350 pF) eases driving with standard logic buffers. |
| 4 | Source (S) | Reference node for gate drive; connects to ground or low-side return path in high-side switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully with 3.3 V or 5 V controllers - eliminates need for level-shifting circuitry in portable electronics. |
| TrenchMOS architecture | Delivers lower RDS(on) per die area than planar MOSFETs - enables smaller footprint without sacrificing efficiency. |
| Low QGD/QG ratio | QGD = 1.6 nC of total QG(tot) = 8.8 nC - improves switching speed and reduces gate drive power loss. |
| Fast body diode | trr = 19.25 ns and Qr = 0.73 nC - minimizes voltage overshoot and losses during freewheeling in buck converters. |
| Thermal robustness | Rth(j-sp) = 70 K/W with solder-point referenced rating - allows accurate junction temperature estimation using measured PCB temperature. |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
|
Use Scenario: Bidirectional overvoltage/overcurrent protection in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Low-side main switch controlling charge/discharge path with integrated sense-FET monitoring. Use Value: RDS(on) ≤ 47 mΩ limits voltage drop under 2 A load, preserving battery runtime; logic-level gate enables direct MCU control without external drivers. |
Use Scenario: 5 V/9 V/15 V USB PD power path selection in portable chargers and docking stations. IC Role / Device Role / Timing Role: High-speed load switch enabling/disabling power rails with minimal insertion loss. Use Value: Fast tf = 4.9 ns and low Coss = 100 pF minimize transient glitches during hot-swap events and support >1 MHz switching in adaptive power routing. |
| DC-DC Synchronous Rectifier | Industrial Sensor Node Power Switch |
|
Use Scenario: Secondary-side rectification in isolated 12 V → 3.3 V flyback converters for IoT gateways. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to improve efficiency at light-to-moderate loads. Use Value: trr = 19.25 ns and low Qr = 0.73 nC prevent shoot-through and reduce reverse recovery loss, boosting efficiency by ≥3% vs. diode solution. |
Use Scenario: Controlled power gating for wireless sensor modules operating on coin-cell or energy-harvesting sources. IC Role / Device Role / Timing Role: Ultra-low quiescent current load switch enabling deep sleep mode with <1 µA leakage (IDSS ≤ 1 µA). Use Value: VGS(th) = 1.5 V ensures clean turn-on with 1.8 V or 3.3 V microcontrollers; low RDS(on) preserves voltage headroom in sub-100 mA applications. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | RDS(on) = 25 mΩ @ VGS = 10 V; SO-8 package; higher current rating (ID = 7.5 A). | Larger footprint and higher thermal mass - better suited for sustained >3 A loads but requires more PCB area. | Select when higher continuous current and lower conduction loss outweigh size constraints. |
| AO3414 | RDS(on) = 52 mΩ @ VGS = 4.5 V; SOT-23 package; lower gate charge (QG = 3.3 nC). | Single-drain-pin construction - less thermal capability and lower peak current (IDM = 12 A vs. 18.4 A). | Prefer for space-constrained, low-power applications where gate drive strength is limited and peak current is <12 A. |
Compared with DMN3025LSD-13 and AO3414, the PMN49EN offers balanced performance: lower RDS(on) than AO3414 in TSOP6 form factor, and superior thermal dissipation via multi-drain pins versus SO-8 alternatives - ideal for mid-power battery-switching applications demanding compactness and reliability.
Availability
PMN49EN is available at Aetrix Electronics and suitable for battery protection circuits, USB power delivery switches, DC-DC synchronous rectifiers, and industrial sensor node power gating requiring stable component supply and long-term manufacturability.
Supply support for PMN49EN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division. It focuses on automotive, industrial, computing, consumer, and wearable markets.
The PMN49EN belongs to Nexperia's logic-level TrenchMOS portfolio, engineered for high-efficiency, low-voltage power switching in portable and space-constrained electronics where gate drive simplicity and thermal performance are critical.
FAQ
What is the maximum continuous drain current for PMN49EN at 100 °C solder point temperature?
The PMN49EN supports 2.9 A continuous drain current at Tsp = 100 °C and VGS = 10 V, as specified in Table 3 of its datasheet. This derating reflects thermal limitations of the TSOP6 package and must be used in thermal design calculations alongside Rth(j-sp) = 70 K/W. The PMN49EN maintains safe operation within its 150 °C junction limit under these conditions.
Does PMN49EN support 3.3 V logic-level gate drive reliably?
Yes - the PMN49EN has a gate-source threshold voltage VGS(th) of 1–2 V (typ 1.5 V) at 25 °C, and RDS(on) = 49–60 mΩ at VGS = 4.5 V and ID = 1.5 A. This ensures full enhancement with 3.3 V microcontroller outputs, delivering predictable on-state resistance without external level shifters. The PMN49EN remains functional across its full −55 °C to +150 °C junction range.
What is the safe operating area (SOA) limitation for PMN49EN in pulsed operation?
At Tsp = 25 °C, the PMN49EN supports 18.4 A peak drain current (IDM) for pulses ≤10 µs, as shown in Figure 3. Its SOA is bounded by RDS(on) limit at low VDS, constant power at mid VDS, and avalanche capability at high VDS. The PMN49EN does not specify avalanche energy rating, so operation beyond DC or repetitive pulse limits requires external clamping or derating.
How does the PMN49EN's source-drain diode compare to standard Schottky diodes?
The PMN49EN's intrinsic body diode has VSD = 0.79–1.2 V at IS = 1.5 A and trr = 19.25 ns, offering faster recovery than general-purpose silicon diodes but higher forward drop than Schottky alternatives. Its Qr = 0.73 nC enables low-loss freewheeling in synchronous buck converters. Unlike discrete Schottkys, the PMN49EN diode shares thermal and layout constraints with the MOSFET channel - a key consideration in thermal design.
Is PMN49EN RoHS-compliant and halogen-free?
Yes - the PMN49EN is manufactured by Nexperia to meet RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. Its SOT457 package uses lead-free matte tin terminal finish and complies with JEDEC J-STD-020 moisture sensitivity level 1 (MSL1), supporting standard reflow profiles without baking. The PMN49EN carries Nexperia's standard environmental compliance documentation.
PMN49EN,135 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 47mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.8 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 350 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.75W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-74
PMN49EN,135 FAQ
1.How can I place an order for PMN49EN,135 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMN49EN,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMN49EN,135 reliable?
The price and inventory of PMN49EN,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMN49EN,135 is usually 5 days.
3.What payment methods are accepted for PMN49EN,135?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMN49EN,135 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMN49EN,135?
PMN49EN,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMN49EN,135 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMN49EN,135?
For technical support, including PMN49EN,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMN49EN,135 requirements.
6.How does Aetrix verify that PMN49EN,135 is sourced from the original manufacturer or authorized distributors?
All PMN49EN,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMN49EN,135 meets industry standards.
7.What is the process for return or replacement of PMN49EN,135?
All PMN49EN,135 units undergo pre-shipment inspection (PSI). If there is an issue with PMN49EN,135, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMN49EN,135 part is unused and in its original packaging.
Return procedure for PMN49EN,135:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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