Nexperia USA Inc. PMN50EPEX

Overview

PMN50EPEX from Nexperia is a 30 V, P-channel enhancement-mode Trench MOSFET in TSOP6 (SOT457) package, designed for high-side load switching and fast line driving. It delivers R_DS(on) = 35 mΩ at V_GS = −10 V and I_D = −4.6 A, supports logic-level gate drive (V_GS(th) = −1 to −3 V), and features ESD protection >2 kV HBM. Its 6 A continuous drain current rating and 19 A peak pulse capability suit compact power control in space-constrained PCBs.

For engineers reviewing the PMN50EPEX datasheet, PMN50EPEX pinout, PMN50EPEX application, or PMN50EPEX equivalent, this page provides verified package mapping, thermal derating curves, gate charge profile (Q_G(tot) = 12.8–20 nC), SOA boundaries, and real-world design implications of its 793 pF C_iss and 19 ns rise time in high-speed switching contexts.

Technical Context

This MOSFET uses Trench technology to achieve low on-resistance and fast switching with minimal gate charge. Its P-channel architecture enables high-side configuration without level-shifting circuitry, and the −10 V gate drive ensures compatibility with standard 3.3 V/5 V logic outputs.

The device integrates an intrinsic body diode (V_SD = −0.8 to −1.2 V at I_S = −1.4 A), supports continuous operation up to T_j = 150 °C, and exhibits normalized R_DS(on) drift of ≤1.7× from 25 °C to 150 °C - critical for thermally stable load-switch designs.

Key Specifications

Pinout & Package

TSOP6 (SOT457) surface-mount plastic package: 1.7 mm × 2.5 mm footprint, 1.1 mm height, 6-lead single-row layout with exposed drain paddle for thermal performance. Mounting requires tin-plated FR4 PCB with 6 cm² copper area under drain pins.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with DMG2305UVT-7 and SI2305DS-T1-E3, PMN50EPEX offers superior thermal performance (R_th(j-sp) = 15–20 K/W), lower on-resistance at −10 V, and higher ESD robustness - making it optimal for industrial load switching where reliability and power density are prioritized over minimal footprint.

Availability

PMN50EPEX is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line drivers, high-side load switches, and synchronous rectifier stages requiring stable component supply and consistent parametric performance across production batches.

Supply support for PMN50EPEX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

The PMN50EPEX belongs to Nexperia's TrenchMOS logic-level P-channel portfolio, engineered for high-efficiency, space-constrained power switching in industrial automation and communication infrastructure.

FAQ

What is the maximum continuous drain current for PMN50EPEX at 100 °C ambient temperature?

The maximum continuous drain current is −2.9 A at T_amb = 100 °C, measured on an FR4 PCB with single-sided 6 cm² copper pad under the drain terminals. This value reflects thermal derating based on R_th(j-a) = 78–90 K/W and T_j(max) = 150 °C, not package current rating alone.

Can PMN50EPEX be driven directly from a 3.3 V GPIO without a gate driver?

Yes - its gate threshold voltage range of −1 to −3 V and guaranteed R_DS(on) of 49–72 mΩ at V_GS = −4.5 V allow full enhancement from 3.3 V logic. However, switching speed will be reduced (t_r/t_f increases ~3× vs. −10 V drive), and conduction loss rises by ~40 % at 4.6 A.

Does PMN50EPEX include an integrated body diode, and what is its forward voltage?

Yes - it has an inherent source-drain body diode with V_SD = −0.8 to −1.2 V at I_S = −1.4 A and T_j = 25 °C. The diode is rated for continuous 1.4 A and supports reverse recovery in synchronous rectifier applications, though no reverse recovery time is specified in the datasheet.

What is the recommended PCB layout for optimal thermal performance of PMN50EPEX?

Mount PMN50EPEX on FR4 with tin-plated copper; use a 6 cm² thermal pad connected to all four drain pins (1, 2, 5, 6); ensure ≥0.4 mm solder mask opening over the pad; apply minimum 6× 0.45 mm diameter thermal vias to inner ground plane; avoid routing signal traces under the device to preserve thermal path integrity.