My Inquiry
My Account
Nexperia USA Inc. PMN50UPE,115
- Part No.:
- PMN50UPE,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-74, SOT-457
- Datasheet:
-
PMN50UPE,115.pdf
- Description:
- MOSFET P-CH 20V 3.6A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:5,291
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PMN50UPE from NXP Semiconductors is a single P-channel enhancement-mode Trench MOSFET in SOT457 (TSOP6) package, rated for −20 V drain-source voltage and −4 A continuous drain current at 25 °C. It features low RDS(on) of 50 mΩ (typ.) at VGS = −4.5 V, −3.6 A, and 3 kV HBM ESD protection, enabling high-side load switching in space-constrained industrial control modules.
For engineers reviewing the PMN50UPE datasheet, PMN50UPE pinout, PMN50UPE application, or PMN50UPE equivalent, key selection criteria include its −0.6 V typical gate threshold voltage, thermal resistance of 88 K/W (junction-to-ambient, drain pad), and suitability for relay driver circuits requiring fast turn-off delay <2.2 µs and low conduction loss in 12 V DC systems.
Technical Context
This device uses Trench MOSFET technology to achieve enhanced channel density and reduced on-resistance versus planar P-channel devices. Its gate threshold voltage range (−0.47 V to −0.9 V) ensures reliable turn-on with logic-level gate drive down to −2.5 V, while the integrated source-drain diode supports bidirectional current handling up to −1.3 A.
The TSOP6 package features four drain terminals (pins 1,2,5,6) and one source (pin 4), enabling low-inductance, high-current PCB routing. Thermal performance is optimized for FR4 boards with 6 cm² drain pad, delivering 1235 mW total power dissipation at 25 °C ambient and derating to 5000 mW at solder point (Tsp = 25 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V - Maximum blocking voltage for 12 V rail switching with 67 % safety margin |
| RDS(on) | 50 mΩ (typ.) at VGS = −4.5 V, ID = −3.6 A - Enables <180 mW conduction loss at 3 A load |
| VGS(th) | −0.6 V (typ.) - Ensures full enhancement with standard 3.3 V or 5 V microcontroller GPIO |
| QG(tot) | 10.5 nC (min) - Supports 1 MHz PWM switching with <1 µs gate drive energy requirement |
| ID (cont) | −4 A (t ≤ 5 s, Tamb = 25 °C) - Sustains peak loads in motor driver precharge or hot-swap circuits |
| ESD Rating | 3 kV HBM - Eliminates need for external ESD protection in board-level assembly |
| Tj Range | −55 °C to +150 °C - Qualified for extended industrial temperature operation without derating |
Pinout & Package
Package: TSOP6 (SOT457), surface-mount plastic package with 6 leads, 3.0 mm × 2.5 mm footprint, 1.3 mm height, and exposed drain pad for thermal management.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Four parallel drain connections reduce package inductance and improve thermal spreading to PCB copper |
| 3 | Gate (G) | Single gate input with 10.5 nC total charge; requires <1 Ω series resistor for controlled turn-on/turn-off |
| 4 | Source (S) | Common source node; connects to system ground or load return path in high-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 50 mΩ typ. at −4.5 V enables <0.5 W power loss at 3 A, reducing heatsink requirements |
| Trench MOSFET architecture | Higher cell density than planar P-FETs yields 25 % lower on-resistance per die area |
| Logic-level gate drive | VGS(th) = −0.6 V allows direct interface with 3.3 V MCU outputs without level-shifting |
| Integrated ESD protection | 3 kV HBM rating eliminates discrete TVS diodes in low-energy control interfaces |
| High peak current capability | IDM = −14.4 A (10 µs pulse) supports inrush current limiting in capacitive loads |
Applications
| Relay Driver | High-Side Load Switch |
|---|---|
|
Use Scenario: Driving 12 V automotive or industrial relays with coil resistance 60–120 Ω. IC Role / Device Role / Timing Role: High-side switch controlling relay coil current path between battery rail and ground. Use Value: Low 50 mΩ RDS(on) minimizes voltage drop across FET, ensuring ≥10.8 V reaches relay coil for guaranteed pull-in at cold start. |
Use Scenario: Powering USB peripherals or sensors from shared 5 V/12 V supply with independent ON/OFF control. IC Role / Device Role / Timing Role: P-channel high-side switch isolating downstream load from main rail during fault or standby. Use Value: −0.6 V VGS(th) enables clean turn-on using simple pull-up resistor + MCU GPIO, eliminating need for charge pump or level shifter. |
| Switching Power Supply | Hot-Swap Controller |
|
Use Scenario: Synchronous rectification or auxiliary rail switching in isolated DC-DC converters. IC Role / Device Role / Timing Role: Low-loss power switch in secondary-side synchronous rectifier stage. Use Value: 10.5 nC QG(tot) and 2.2 µs td(off) support efficient 500 kHz–1 MHz operation with minimal gate drive loss. |
Use Scenario: Inrush current limiting for backplane cards or modular power supplies during live insertion. IC Role / Device Role / Timing Role: Controlled ramp-up switch placed between input bus and load capacitance. Use Value: −14.4 A peak drain current handles 1000 µF load capacitance charging surge without SOA violation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305UVT-7 | RDS(on) = 48 mΩ (typ.) at VGS = −4.5 V; VGS(th) = −0.7 V; same SOT-563 package (smaller than TSOP6) | Lower footprint area but higher thermal resistance (150 K/W j-a); unsuitable for >2 A continuous loads without forced cooling | Select when board space is critical and thermal budget allows ≤2 A operation |
| SI2305DS-T1-E3 | RDS(on) = 55 mΩ (typ.) at VGS = −4.5 V; VGS(th) = −1.0 V; SOT-23 package with single drain terminal | Higher gate threshold requires ≥−5 V drive for full enhancement; lower peak current (−12 A) limits inrush handling | Select only if existing SOT-23 layout must be reused and gate drive can supply −5 V |
Compared with DMG2305UVT-7 and SI2305DS-T1-E3, PMN50UPE offers superior thermal performance via quad-drain TSOP6 packaging and lower VGS(th), making it preferred for high-reliability 3–4 A high-side switching where PCB real estate permits 3.0 × 2.5 mm footprint.
Availability
PMN50UPE is available at Aetrix Electronics and suitable for relay driver circuits, high-side loadswitch designs, and switching power supply applications requiring stable component supply and long-term industrial lifecycle support.
Supply support for PMN50UPE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.
PMN50UPE belongs to NXP's TrenchMOS portfolio-designed specifically for high-efficiency, low-voltage power switching in space-constrained industrial control and power management systems.
FAQ
What is the maximum continuous drain current for PMN50UPE at 100 °C ambient temperature?
The maximum continuous drain current is −2.3 A at Tamb = 100 °C and VGS = −4.5 V, as specified in Table 5 (Limiting values). This reflects thermal derating due to reduced heat dissipation capability at elevated ambient temperatures, and assumes standard FR4 PCB mounting with 6 cm² drain pad.
Can PMN50UPE be used in a low-side switching configuration?
No-PMN50UPE is a P-channel MOSFET optimized for high-side switching. Its source terminal is internally tied to the system reference (typically ground in high-side use), and using it as a low-side switch would require gate drive below system ground, which is impractical without negative supply rails or level-shifting circuitry.
What is the safe operating area (SOA) limitation at DC conditions?
At DC, the SOA is limited by RDS(on) and thermal resistance: maximum continuous power is 1235 mW at Tamb = 25 °C (Table 5), corresponding to −3.6 A at VDS = 0.095 V (RDS(on) × ID). Fig. 3 confirms this boundary aligns with the "DC; Tamb = 25 °C" curve intersecting VDS ≈ 0.1 V at −3.6 A.
Does PMN50UPE have an integrated body diode, and what is its forward voltage?
Yes-it includes an inherent source-drain body diode with VSD = −0.8 V to −1.2 V at IS = −1.3 A and Tj = 25 °C (Table 7). This diode conducts during reverse current events (e.g., inductive kickback), and its low forward voltage reduces energy dissipation compared to discrete diode solutions.
PMN50UPE,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 66mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15.7 nC @ 10 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 24 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 510mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
PMN50UPE,115 FAQ
1.How can I place an order for PMN50UPE,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMN50UPE,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMN50UPE,115 reliable?
The price and inventory of PMN50UPE,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMN50UPE,115 is usually 5 days.
3.What payment methods are accepted for PMN50UPE,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMN50UPE,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMN50UPE,115?
PMN50UPE,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMN50UPE,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMN50UPE,115?
For technical support, including PMN50UPE,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMN50UPE,115 requirements.
6.How does Aetrix verify that PMN50UPE,115 is sourced from the original manufacturer or authorized distributors?
All PMN50UPE,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMN50UPE,115 meets industry standards.
7.What is the process for return or replacement of PMN50UPE,115?
All PMN50UPE,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMN50UPE,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMN50UPE,115 part is unused and in its original packaging.
Return procedure for PMN50UPE,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PMN50UPE,115 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
