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NXP Semiconductors PMN50XP,165
- Part No.:
- PMN50XP,165
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- SC-74, SOT-457
- Datasheet:
-
PMN50XP,165.pdf
- Description:
- MOSFET P-CH 20V 4.8A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,601
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Product details
Overview
PMN50XP from Nexperia is a P-channel TrenchMOS enhancement-mode power MOSFET in TSOP6 (SOT457) package, designed for low-voltage load switching and battery management. It features −20 V drain-source voltage rating, 48–60 mΩ RDS(on) at VGS = −4.5 V and ID = −2.8 A, and −0.55 to −0.95 V gate threshold voltage, enabling efficient operation in portable DC-DC converters and USB-powered systems.
For engineers reviewing the PMN50XP datasheet, PMN50XP pinout, PMN50XP application, or PMN50XP equivalent, this page delivers verified electrical parameters, validated TSOP6 terminal mapping, real-world use cases in battery-powered equipment, and two confirmed alternative parts with documented functional trade-offs.
Technical Context
The PMN50XP employs TrenchMOS technology to achieve extremely low on-state resistance and low gate threshold voltage, supporting direct logic-level drive from 3.3 V or 2.5 V controllers. Its P-channel configuration enables high-side switching without level-shifting circuitry.
Thermal performance is defined by a junction-to-solder-point thermal resistance of 55 K/W, and safe operating area supports continuous −4.8 A at 25 °C solder point temperature and pulsed −19.4 A peak drain current. The integrated source-drain diode has −0.77 V forward voltage at −1.7 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V - Maximum drain-source blocking voltage; suitable for 12 V and lower battery rails. |
| RDS(on) | 48–60 mΩ @ VGS = −4.5 V, ID = −2.8 A, Tj = 25 °C - Enables <150 mW conduction loss at 2.8 A, critical for thermally constrained portable designs. |
| VGS(th) | −0.55 to −0.95 V @ ID = −0.25 mA - Ensures reliable turn-on with standard 3.3 V GPIOs and low-power microcontrollers. |
| QG(tot) | 10 nC @ VDS = −10 V, ID = −4.7 A - Low gate charge reduces drive power and switching losses in high-frequency DC-DC stages. |
| td(off) | 82 ns @ VGS = −4.5 V, RG(ext) = 6 Ω - Fast turn-off supports >1 MHz switching in synchronous buck controllers. |
| ID | −4.8 A continuous @ Tsp = 25 °C - Supports medium-current load switching in industrial sensors and peripheral power rails. |
| Ciss | 1020 pF @ VDS = −20 V - Input capacitance impacts gate driver sizing and EMI behavior in compact layouts. |
Pinout & Package
PMN50XP is housed in a plastic surface-mounted TSOP6 package (SOT457), optimized for high-density PCB layouts and automated assembly. The 6-pin outline features dual drain leads for enhanced current handling and thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Drain | Primary current-carrying terminal; electrically tied to pins 2, 5, and 6 for parallel conduction and reduced package inductance. |
| 2 | Drain | Secondary drain connection; shares same node as pins 1, 5, and 6 to distribute current and improve thermal spreading. |
| 3 | Gate | Control input; requires ≤12 V absolute max gate-source voltage; low threshold enables direct MCU interface. |
| 4 | Source | Reference node for gate drive and current return path; connected internally to substrate and exposed pad in some variants. |
| 5 | Drain | Third drain terminal; contributes to total package current rating and thermal mass via copper leadframe. |
| 6 | Drain | Fourth drain terminal; ensures mechanical stability and low-inductance routing in high-speed switching applications. |
Key Features
| Feature | Design Value |
|---|---|
| Extremely low RDS(on) | 48 mΩ typical at −4.5 V gate drive - minimizes I²R losses in battery-powered load switches and power OR-ing circuits. |
| Low VGS(th) | −0.75 V typical - allows full enhancement with 2.5 V/3.3 V logic outputs, eliminating need for gate drivers in many embedded systems. |
| TrenchMOS architecture | Optimized cell pitch and trench depth - delivers superior on-resistance-to-area ratio versus planar MOSFETs in same package. |
| TSOP6 (SOT457) package | 0.95 mm pitch, 3.1 × 2.7 mm footprint - supports high-density routing and reflow-compatible assembly in space-constrained IoT modules. |
| Source-drain diode | VSD = −0.77 V @ −1.7 A - provides inherent reverse-current blocking and freewheeling capability in buck and load-switch topologies. |
Applications
| Battery Management System | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Bidirectional current control in smart battery packs with overvoltage/overcurrent protection. IC Role / Device Role / Timing Role: High-side P-channel switch isolating battery from system bus during fault conditions. Use Value: Low 48 mΩ RDS(on) limits voltage drop across switch during 3 A discharge, preserving battery runtime and thermal margin. |
Use Scenario: VBUS path control in USB-C receptacles supporting 3 A/5 V and 1.5 A/20 V profiles. IC Role / Device Role / Timing Role: Load switch enabling/disabling power delivery to downstream ports under firmware control. Use Value: −0.75 V VGS(th) ensures robust turn-on with 3.3 V microcontroller GPIOs, reducing BOM count vs. level-shifted solutions. |
| Portable Medical Sensor Module | Industrial IoT Edge Node |
|
Use Scenario: Power gating of BLE radio, ADC, and sensor front-end to extend battery life between measurements. IC Role / Device Role / Timing Role: Low-quiescent-current load switch activated by sleep/wake controller signals. Use Value: Gate leakage <100 nA and sub-1 V threshold enable microamp-level standby current, extending 200 mAh coin-cell life to >1 year. |
Use Scenario: Isolation of RS-485 transceiver and CAN controller during deep-sleep mode in remote monitoring nodes. IC Role / Device Role / Timing Role: Controlled power rail switch responding to wake-up interrupts from external sensors. Use Value: 82 ns td(off) and 35 ns fall time support fast power sequencing (<100 μs) required for deterministic wake-up latency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305UX | RDS(on) = 48 mΩ @ −4.5 V but higher VGS(th) (−1.0 to −2.5 V); SOT-23-6 package with smaller thermal mass. | Less suitable for 2.5 V logic drive; requires stronger gate pull-down for reliable turn-off in noisy environments. | Select DMG2305UX only if board space is critical and gate drive voltage ≥4.5 V is guaranteed. |
| SI2305DS | RDS(on) = 55 mΩ @ −4.5 V; higher QG (13 nC); same TSOP6 footprint but different pinout (G-S-D-D-D-D). | Requires PCB layout revision due to non-identical pin assignment; slower switching increases losses above 500 kHz. | Choose SI2305DS only when sourcing constraints require Vishay parts and layout modification is acceptable. |
Compared with DMG2305UX and SI2305DS, the PMN50XP offers the lowest VGS(th) among the three, enabling direct compatibility with 2.5 V/3.3 V MCUs without gate boosting, while its validated TSOP6 pinout and 55 K/W thermal resistance provide superior reliability in sustained-load industrial applications.
Availability
PMN50XP is available at Aetrix Electronics and suitable for battery management, USB-C power delivery, and portable medical sensor applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for PMN50XP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, consumer, and wearable markets.
The PMN50XP belongs to Nexperia's TrenchMOS low-level FET product line, engineered specifically for high-efficiency, low-voltage load switching in space- and power-constrained portable electronics.
FAQ
What is the maximum continuous drain current rating for PMN50XP at 100 °C solder point temperature?
The PMN50XP supports −3 A continuous drain current at Tsp = 100 °C, as specified in Table 4 (Limiting values). This derated value reflects thermal constraints of the TSOP6 package and must be used in thermal design calculations for ambient temperatures exceeding 70 °C. The PMN50XP datasheet confirms this limit applies under VGS = −4.5 V bias and accounts for junction temperature rise up to 150 °C.
Does PMN50XP have an integrated ESD protection diode on the gate terminal?
No, the PMN50XP does not include built-in gate ESD protection. Its gate leakage current specification (±10 to ±100 nA) and absolute maximum VGS rating of ±12 V indicate it relies on external protection-such as series gate resistors and TVS clamps-in systems exposed to human-body-model (HBM) or charged-device-model (CDM) ESD events. This is consistent with standard PowerMOS design practice for cost-sensitive, high-volume applications.
Can PMN50XP be used in synchronous rectification applications?
No, the PMN50XP is not recommended for synchronous rectification. Its body diode reverse recovery time (trr) is unspecified in the datasheet, and its QGD/QG ratio (1.3/10 = 0.13) is higher than optimized synchronous rectifiers, increasing switching losses during commutation. The PMN50XP datasheet explicitly positions it for load switching-not rectification-applications.
What is the thermal resistance from junction to ambient (Rth(j-a)) for PMN50XP in standard JEDEC PCB mounting?
The PMN50XP datasheet does not specify Rth(j-a) under JEDEC conditions; only Rth(j-sp) = 55 K/W (junction-to-solder-point) is provided in Table 5. Ambient thermal resistance depends entirely on PCB layout-copper area, layer count, and airflow-and must be measured or simulated per application. For estimation, a 2-layer board with 1 in² 2 oz copper on both sides yields ~120 K/W, but this is not guaranteed by Nexperia for the PMN50XP.
Is PMN50XP RoHS compliant and halogen-free?
Yes, the PMN50XP meets RoHS Directive 2011/65/EU and is halogen-free per Nexperia's material declarations. The "165" suffix in the full orderable part number PMN50XP,165 indicates tape-and-reel packaging compliant with J-STD-020 moisture sensitivity level 1 (MSL1), and all materials comply with Nexperia's green policy effective from 2007, as confirmed in the product change notice accompanying the Rev. 02 datasheet.
PMN50XP,165 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1020 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.2W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-74
PMN50XP,165 FAQ
1.How can I place an order for PMN50XP,165 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMN50XP,165 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMN50XP,165 reliable?
The price and inventory of PMN50XP,165 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMN50XP,165 is usually 5 days.
3.What payment methods are accepted for PMN50XP,165?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMN50XP,165 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMN50XP,165?
PMN50XP,165 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMN50XP,165 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMN50XP,165?
For technical support, including PMN50XP,165 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMN50XP,165 requirements.
6.How does Aetrix verify that PMN50XP,165 is sourced from the original manufacturer or authorized distributors?
All PMN50XP,165 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMN50XP,165 meets industry standards.
7.What is the process for return or replacement of PMN50XP,165?
All PMN50XP,165 units undergo pre-shipment inspection (PSI). If there is an issue with PMN50XP,165, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMN50XP,165 part is unused and in its original packaging.
Return procedure for PMN50XP,165:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PMN50XP,165 Tags
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BSZ180P03NS3EGATMA1
Infineon Technologies
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SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
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SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
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DMT6015LSS-13
Diodes Incorporated
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