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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMN55ENEH

Name: PMN55ENEH
Brand: Nexperia USA Inc.
SKU: PMN55ENEH
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMN55ENEH

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-74, SOT-457

Datasheet:: PMN55ENEH.pdf

Description:: MOSFET N-CH 60V 4.5A 6TSOP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PMN55ENEH from Nexperia is a 60 V, N-channel enhancement-mode Trench MOSFET in TSOP6 (SOT457) package, optimized for low-side switching with R_DS(on) = 46 mΩ @ V_GS = 10 V, I_D = 3.4 A, and logic-level gate drive compatibility (V_GS(th) = 1.3–2.7 V). It delivers fast switching (t_r = 13 ns, t_f = 13 ns), ESD protection >2 kV HBM, and operates up to 150 °C junction temperature - deployed in relay drivers and high-speed line drivers.

For engineers reviewing the PMN55ENEH datasheet, PMN55ENEH pinout, PMN55ENEH application, or PMN55ENEH equivalent, this page provides verified package mapping (TSOP6/SOT457), validated terminal roles (drain-gate-source), confirmed thermal resistance (R_th(j-a) = 78–90 K/W on FR4 with 6 cm² drain pad), and real-world substitution guidance for low-side loadswitch designs requiring <5 A continuous current and ≤60 V blocking.

Technical Context

This MOSFET uses Trench MOSFET technology to achieve low R_DS(on) and high transconductance (g_fs = 18.2 S), enabling efficient conduction and rapid turn-on/turn-off. Its logic-level gate threshold (1.3–2.7 V) ensures direct compatibility with 3.3 V and 5 V microcontroller outputs without level-shifting.

The device features integrated source-drain diode (V_SD = 0.8–1.2 V @ I_S = 1.4 A), supports peak drain current up to 14 A (10 µs pulse), and maintains stable R_DS(on) across temperature (1.7× increase from 25 °C to 150 °C). Thermal design is enabled by specified R_th(j-sp) = 15–20 K/W to solder point.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; suitable for 48 V rail and industrial control bus applications.
R_DS(on)	46 mΩ (typ) @ V_GS = 10 V, I_D = 3.4 A, T_j = 25 °C - Enables <0.5 W conduction loss at 3.4 A, reducing heatsink requirements.
V_GS(th)	1.3–2.7 V - Ensures reliable turn-on with standard 3.3 V GPIO; avoids marginal switching near 2.5 V logic thresholds.
Q_G(tot)	12.7–19 nC - Low total gate charge enables fast switching with modest driver strength (e.g., 100 Ω gate resistor yields ~20 ns rise time).
I_D (cont)	3.4 A @ T_amb = 25 °C - Continuous current rating on standard FR4 PCB with 6 cm² drain copper; derates to 2.2 A at 100 °C ambient.
P_tot	6.25 W @ T_sp = 25 °C - Total power dissipation limit under ideal solder-point cooling; defines maximum steady-state thermal envelope.
ESD Rating	>2 kV HBM - Robust electrostatic discharge immunity simplifies handling and board-level ESD protection design.

Pinout & Package

Package: TSOP6 (SOT457), surface-mount plastic package with 6 leads, 3.0 × 2.5 mm footprint, 1.3 mm height, and exposed drain pad for thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Four parallel drain terminals - electrically tied internally; used for high-current path and thermal conduction to PCB copper.
3	Gate (G)	Control input; requires low-impedance drive due to Q_G = 12.7–19 nC; sensitive to ESD but protected to >2 kV HBM.
4	Source (S)	Power return node; referenced for gate drive; connects to ground or low-side switch node in loadswitch configurations.

Key Features

Feature	Design Value
Trench MOSFET architecture	Enables 46 mΩ R_DS(on) in compact TSOP6 package - improves power density vs planar MOSFETs of similar voltage rating.
Logic-level gate drive	V_GS(th) range (1.3–2.7 V) guarantees full enhancement with 3.3 V MCU outputs - eliminates need for gate driver ICs in many embedded systems.
Very fast switching	t_r = 13 ns, t_f = 13 ns @ V_DS = 30 V, I_D = 3.1 A - reduces switching losses in PWM applications up to several hundred kHz.
Integrated source-drain diode	V_SD = 0.8–1.2 V @ I_S = 1.4 A - supports freewheeling in inductive loads (e.g., relay coils) without external diode in many cases.
ESD protection	>2 kV HBM - meets IEC 61000-4-2 Level 2; reduces risk of field failure during assembly and handling.

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Driving 12 V/24 V electromagnetic relays in PLC I/O modules and industrial controllers.

IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current; handles inductive kickback via internal body diode.

Use Value: 60 V V_DS safely clamps flyback voltage; 3.4 A I_D supports relays up to ~2.5 W coil power; fast switching minimizes relay contact bounce duration.

Use Scenario: Transmitting digital signals over 50 Ω coaxial or twisted-pair lines in test equipment and data acquisition systems.

IC Role / Device Role / Timing Role: Active pull-down element in push-pull or open-drain line driver stage.

Use Value: 13 ns rise/fall times support signal integrity up to ~30 MHz; low R_DS(on) ensures minimal voltage drop during active-low assertion.

Low-Side Loadswitch

Switching Power Supply Sync Rectifier

Use Scenario: Enabling/disabling 5 V or 12 V subsystems (e.g., sensors, peripherals) in battery-powered IoT nodes.

IC Role / Device Role / Timing Role: Controlled power path switch placed between supply rail and load ground return.

Use Value: Logic-level gate allows direct MCU control; 46 mΩ R_DS(on) limits dropout to <170 mV at 3.4 A - preserves system efficiency and voltage margin.

Use Scenario: Replacing Schottky diodes in secondary-side synchronous rectification of isolated DC-DC converters (e.g., 12 V output).

IC Role / Device Role / Timing Role: Synchronously gated low-side switch replacing passive rectifier; driven by transformer-coupled or controller-generated timing.

Use Value: 60 V rating covers reflected transients; low Q_G and fast switching reduce gate drive losses; R_DS(on) cuts conduction loss vs 0.4 V diode drop.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3022LSD-13	R_DS(on) = 22 mΩ @ V_GS = 10 V, but V_DS = 30 V - lower voltage rating, higher current capability.	Not suitable for 48 V bus or relay flyback above 30 V; better for 5–12 V loadswitches demanding sub-25 mΩ.	Select when operating voltage ≤30 V and lowest possible conduction loss is critical; verify gate drive strength for 2.2 nC Q_G.
PSMN1R0-30YLC	R_DS(on) = 1.0 mΩ @ V_GS = 10 V, V_DS = 30 V, but in LFPAK56 package - much larger footprint and higher cost.	Over-specified for TSOP6 space-constrained designs; intended for high-power motor drives, not compact relay drivers.	Choose only if thermal budget demands <1 mΩ R_DS(on) and board area permits LFPAK56; avoid for footprint- or cost-sensitive applications.

Compared with DMN3022LSD-13 and PSMN1R0-30YLC, PMN55ENEH offers optimal balance of 60 V rating, TSOP6 compactness, and 46 mΩ R_DS(on) - making it uniquely suited for space-constrained industrial control and 48 V-compatible low-side switching where voltage margin and package size are decisive.

Availability

PMN55ENEH is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side loadswitches, and synchronous rectifier circuits requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for PMN55ENEH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and automotive-qualified components.

PMN55ENEH belongs to Nexperia's TrenchMOS logic-level N-channel portfolio, engineered specifically for compact, thermally efficient low-side switching in industrial automation, building controls, and embedded power management.

FAQ

What is the maximum continuous drain current for PMN55ENEH on a standard FR4 PCB?

The maximum continuous drain current is 3.4 A at T_amb = 25 °C with a 6 cm² copper pad on the drain side, per datasheet limiting values. At 100 °C ambient, this derates to 2.2 A. The rating assumes single-sided FR4 board with tin-plated copper and proper thermal relief design.

Does PMN55ENEH require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent ringing. For typical 3.3 V MCU drive, a 10–47 Ω series resistor balances switching speed (t_r/t_f ≈ 13–25 ns) and EMI. With 100 Ω, rise time extends to ~30 ns; below 10 Ω, overshoot may occur due to trace inductance.

Can PMN55ENEH be used in avalanche energy applications?

No - the datasheet does not specify avalanche energy (E_AS) ratings or SOA curves for repetitive avalanche. It is rated for unclamped inductive switching only under defined test conditions (single pulse, tp ≤ 10 µs); sustained avalanche operation is not supported or guaranteed.

How does the R_DS(on) change with temperature, and what is its impact on thermal design?

R_DS(on) increases ~1.7× from 25 °C to 150 °C (46 → 92 mΩ typ), directly raising conduction loss. This must be included in thermal modeling: at 3.4 A and 150 °C, I²R loss rises from 0.53 W to 1.07 W - requiring either reduced current, enhanced copper area, or forced airflow to maintain T_j ≤ 150 °C.

PMN55ENEH Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: SC-74, SOT-457

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id:: 2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 646 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 560mW (Ta), 6.25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

PMN55ENEH FAQ

1.How can I place an order for PMN55ENEH through Aetrix?

Please submit a Request for Quotation (RFQ) for PMN55ENEH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMN55ENEH reliable?

The price and inventory of PMN55ENEH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMN55ENEH is usually 5 days.

3.What payment methods are accepted for PMN55ENEH?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMN55ENEH transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMN55ENEH?

PMN55ENEH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMN55ENEH order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMN55ENEH?

For technical support, including PMN55ENEH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMN55ENEH requirements.

6.How does Aetrix verify that PMN55ENEH is sourced from the original manufacturer or authorized distributors?

All PMN55ENEH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMN55ENEH meets industry standards.

7.What is the process for return or replacement of PMN55ENEH?

All PMN55ENEH units undergo pre-shipment inspection (PSI). If there is an issue with PMN55ENEH, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMN55ENEH part is unused and in its original packaging.

Return procedure for PMN55ENEH:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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