NXP Semiconductors PMN55LN,135

Overview

PMN55LN from Nexperia is an N-channel enhancement-mode TrenchMOS™ logic-level power MOSFET in SOT457 (TSOP6) package, rated for V_DS = 20 V, I_D = 4.1 A (T_sp = 25 °C), R_DS(on) ≤ 65 mΩ at V_GS = 10 V, and P_tot = 1.75 W - optimized for DC-to-DC primary-side switching in compact power converters.

For engineers reviewing the PMN55LN datasheet, PMN55LN pinout, PMN55LN application, or PMN55LN equivalent, this device is selected for low-voltage, high-efficiency synchronous rectification and load switching where logic-level gate drive (V_GS(th) max 2 V) and low on-resistance in a 6-pin surface-mount package are critical.

Technical Context

This MOSFET employs µTrenchMOS™ technology to achieve low R_DS(on) with fast switching dynamics: t_d(on) = 10 ns, t_r = 14 ns, t_d(off) = 23 ns, and t_f = 12 ns under V_DD = 10 V, R_G = 6 Ω conditions. Its gate threshold voltage (V_GS(th)) ranges from 0.6 V to 2.3 V across −55 °C to +150 °C, enabling reliable turn-on with 3.3 V or 4.5 V microcontroller outputs.

The device integrates a source-drain diode with V_SD = 0.8–1.2 V at I_S = 1.7 A and supports peak diode current I_SM = 5.95 A. Thermal resistance R_th(j-sp) = 70 K/W enables operation up to T_j = 150 °C when mounted on standard PCB copper areas.

Key Specifications

Pinout & Package

PMN55LN is housed in a plastic SOT457 (TSOP6) surface-mount package measuring 3.1 mm × 2.7 mm × 1.1 mm, with exposed drain pads on pins 1, 2, 5, and 6 for enhanced thermal and current handling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with DMN2004LK-7 and PSMN1R0-30YLC, PMN55LN offers balanced performance in the 20 V class: its quad-drain SOT457 layout provides better thermal dissipation than SOT-23 while maintaining compatibility with dense routing, and its 65 mΩ R_DS(on) at 4.5 V meets most 3.3 V MCU-driven applications without over-spec'ing cost or size.

Availability

PMN55LN is available at Aetrix Electronics and suitable for DC-DC converters, USB power switches, and automotive body control modules requiring stable component supply and long-term industrial availability.

Supply support for PMN55LN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division.

The PMN55LN belongs to Nexperia's µTrenchMOS™ logic-level FET product line, engineered for high-efficiency, space-constrained power switching in automotive, industrial, and consumer power management systems.

FAQ

What is the maximum continuous drain current for PMN55LN at 100 °C solder point temperature?

The PMN55LN supports a continuous drain current of 2.6 A at T_sp = 100 °C with V_GS = 10 V, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the SOT457 package and must be verified against actual PCB copper area and ambient conditions. The PMN55LN datasheet confirms this value in the "Limiting values" section under ID parameter conditions.

Does PMN55LN support 3.3 V logic-level gate drive?

Yes, PMN55LN is a logic-level MOSFET with V_GS(th) ranging from 1 V to 2 V at 25 °C, ensuring full enhancement at 3.3 V gate drive. At V_GS = 4.5 V and I_D = 2 A, R_DS(on) is 70–82 mΩ - sufficient for most low-power switching applications. The PMN55LN datasheet explicitly lists V_GS(th) min/max across temperature and confirms 4.5 V operation in the Characteristics table.

What is the thermal resistance from junction to solder point for PMN55LN?

The PMN55LN has a maximum thermal resistance R_th(j-sp) of 70 K/W, measured from junction to solder point under transient conditions, per Table 3 in the datasheet. This value assumes standard mounting on FR4 with 1 cm² 2-oz copper; actual performance depends on PCB layout. The PMN55LN thermal model is validated in Figure 4 showing Z_th(j-sp) vs. pulse duration.

Can PMN55LN be used in synchronous rectification topologies?

Yes, PMN55LN is suitable for low-side synchronous rectification in buck converters due to its low R_DS(on), fast switching (t_f = 12 ns), and integrated source-drain diode with V_SD = 0.8–1.2 V. Its logic-level gate drive allows direct control from PWM controller outputs. The PMN55LN datasheet confirms diode forward voltage and switching timing parameters required for synchronous operation.

What is the gate charge requirement for PMN55LN at 10 V drive?

The total gate charge Q_g(tot) for PMN55LN is 13.1 nC at V_DD = 10 V, I_D = 6 A, and V_GS = 10 V, as specified in Table 4. This value determines gate driver sizing and switching loss; typical gate-source (Q_gs) and Miller (Q_gd) charges are 1.9 nC and 2.3 nC respectively. The PMN55LN datasheet provides these figures in the Dynamic characteristics section with reference to Figure 13.