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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMN70EPEX

Name: PMN70EPEX
Brand: Nexperia USA Inc.
SKU: PMN70EPEX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMN70EPEX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-74, SOT-457

Datasheet:: PMN70EPEX.pdf

Description:: MOSFET P-CH 30V 4.4A 6TSOP

Quantity:: RFQ Add To RFQ list

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Inventory:2,243

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Product details

Overview

PMN70EPEX from Nexperia is a 30 V, P-channel enhancement-mode Trench MOSFET in TSOP6 (SOT457) package, designed for high-side load switching and fast line driving. It delivers R_DS(on) = 60 mΩ @ V_GS = −10 V, supports −4.4 A continuous drain current at 25 °C, and features logic-level gate drive compatibility with ESD protection >2 kV HBM.

For engineers reviewing the PMN70EPEX datasheet, PMN70EPEX pinout, PMN70EPEX application, or PMN70EPEX equivalent, key selection criteria include its low on-resistance at 4.5 V gate drive (96 mΩ), fast switching (t_r = 8 ns, t_f = 7.5 ns), thermal resistance R_th(j-a) = 190 K/W, and suitability for space-constrained relay driver and high-speed interface circuits.

Technical Context

This P-channel MOSFET uses Trench technology to achieve enhanced conduction efficiency and reduced gate charge (Q_G(tot) = 6.5–11.5 nC). Its gate threshold voltage (V_GS(th) = −1 to −3 V) ensures reliable turn-on with standard logic-level signals, while the integrated source-drain diode (V_SD = −0.8 to −1.2 V @ I_S = −1.4 A) supports bidirectional current handling in load-switch configurations.

The device operates across −55 °C to 150 °C junction temperature range and is rated for V_DS = −30 V, V_GS = ±20 V, and peak pulsed drain current I_DM = −14 A. Thermal derating follows a normalized power dissipation curve enabling 1.4 W at ambient (FR4, 6 cm² drain pad) and up to 6.25 W at solder point (T_sp = 25 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−30 V - Maximum drain-source blocking voltage; defines safe operating ceiling in high-side switch topologies.
R_DS(on) @ V_GS = −10 V	60–80 mΩ - On-resistance at full gate drive; determines conduction loss and thermal rise under −3.3 A DC load.
R_DS(on) @ V_GS = −4.5 V	96–140 mΩ - On-resistance at logic-level drive; enables direct interfacing with 3.3 V/5 V microcontrollers without level shifters.
I_D (continuous)	−4.4 A @ T_amb = 25 °C - Sustained current capability with standard PCB layout; derates to −2.1 A at 100 °C ambient.
Q_G(tot)	6.5–11.5 nC - Total gate charge; directly impacts switching energy and required gate driver strength for <10 ns transition times.
t_r/t_f	8 ns / 7.5 ns - Rise/fall time at V_DS = −15 V, I_D = −3.3 A, R_G(ext) = 6 Ω; enables >50 MHz switching in optimized layouts.
R_th(j-a)	190–220 K/W - Junction-to-ambient thermal resistance on FR4; informs heatsinking requirements for sustained power dissipation.

Pinout & Package

PMN70EPEX is housed in a 6-lead TSOP6 (SOT457/SC-74) surface-mount plastic package with exposed drain pads for thermal performance. The package measures 3.1 × 2.7 × 1.1 mm and features gull-wing leads compatible with reflow and wave soldering per IPC-7351B footprint guidelines.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Four parallel drain terminals - collectively handle full current path and provide low-inductance, high-current connection to PCB copper pour.
3	Gate (G)	Control input - accepts logic-level voltage; requires <12 Ω series resistance to damp ringing during fast switching.
4	Source (S)	Reference node for gate drive and load return - connects to system ground or load common in high-side configuration.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = −4.5 V, eliminating need for external level-shifting circuitry in 3.3 V systems.
Enhanced thermal dissipation	1.4 W continuous power rating on standard FR4 PCB (6 cm² drain pad), enabled by multi-drain-pin construction and low R_th(j-sp) = 15–20 K/W.
Fast switching performance	Sub-10 ns rise/fall times support high-frequency PWM control and minimize switching losses in digital load-switch applications.
ESD robustness	HBM rating >2 kV ensures reliability during board assembly and handling without requiring additional protection components.
Trench MOSFET architecture	Delivers lower R_DS(on) per die area versus planar designs, enabling compact size without sacrificing conduction efficiency.

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Replacing electromechanical relays in industrial I/O modules to reduce wear, bounce, and acoustic noise.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling 12–24 V DC coil loads with µs-scale actuation timing.

Use Value: Enables solid-state reliability and 10× longer lifetime vs. mechanical relays, with <100 ns response latency and no contact arcing.

Use Scenario: Driving terminated transmission lines (e.g., RS-422, LVDS stubs) in test equipment and data acquisition systems.

IC Role / Device Role / Timing Role: Active termination switch toggling between active and high-Z states to manage signal integrity dynamically.

Use Value: Supports >50 Mbps edge rates via 8 ns rise time and low output capacitance (C_oss = 64 pF), minimizing reflections and jitter.

High-Side Load Switch

Switching Power Circuit

Use Scenario: Enabling/disabling power to peripheral subsystems (e.g., sensors, displays) in battery-powered portable devices.

IC Role / Device Role / Timing Role: Controlled high-side switch with reverse-current blocking and soft-start capability via gate RC network.

Use Value: Provides clean power sequencing, zero reverse leakage (I_DSS < 1 µA), and <1 µs turn-off to prevent backfeed during hot-swap events.

Use Scenario: Building synchronous buck converter high-side switches or discrete half-bridge legs in low-power DC-DC modules.

IC Role / Device Role / Timing Role: Fast-switching P-channel FET paired with N-channel counterpart for efficient duty-cycle control.

Use Value: Delivers 60 mΩ on-resistance at −10 V drive and 11.5 nC total gate charge-reducing conduction + switching losses simultaneously.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	R_DS(on) = 42 mΩ @ −10 V but only rated for −30 V; higher Q_G (15 nC); SO-8 package (larger footprint).	Better conduction efficiency but slower switching; less suitable for space-constrained high-frequency designs.	Choose when lowest R_DS(on) dominates over size and speed-e.g., low-frequency power distribution.
SI2301DS-T1-BE3	R_DS(on) = 115 mΩ @ −4.5 V; smaller SOT-23 package; lower I_D (−2.7 A); no specified ESD rating.	Lower cost and smaller size, but insufficient for >3 A loads or ESD-sensitive environments.	Choose for cost-sensitive, low-current (<2 A), non-critical ESD applications where PCB area is extremely limited.

Compared with DMN3026LSD-13 and SI2301DS-T1-BE3, PMN70EPEX uniquely balances logic-level drive, 60 mΩ on-resistance, 4.4 A current, and 6-pin TSOP6 thermal performance-making it optimal for compact, high-reliability high-side switching where both speed and power density matter.

Availability

PMN70EPEX is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line drivers, high-side loadswitches, and discrete switching power circuits requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for PMN70EPEX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors-including MOSFETs, logic, analog, and ESD protection devices-serving automotive, industrial, and consumer markets.

PMN70EPEX belongs to Nexperia's TrenchMOS logic-level P-channel portfolio, engineered specifically for compact, efficient high-side switching in space-constrained and thermally demanding applications such as portable instrumentation and programmable logic I/O stages.

FAQ

What is the maximum continuous drain current for PMN70EPEX at 100 °C ambient temperature?

The maximum continuous drain current for PMN70EPEX is −2.1 A at T_amb = 100 °C, as specified in Table 5 (Limiting values) of the official Nexperia datasheet. This value assumes mounting on an FR4 PCB with single-sided copper, tin-plated, and a 6 cm² drain pad. Derating is linear between 25 °C and 100 °C per Figure 2.

Does PMN70EPEX support 3.3 V microcontroller gate drive without external level shifting?

Yes. PMN70EPEX has a gate threshold voltage (V_GS(th)) of −1 to −3 V and achieves R_DS(on) = 96–140 mΩ at V_GS = −4.5 V, enabling full enhancement with standard 3.3 V logic outputs. No level shifter is needed, though a 10–22 Ω series gate resistor is recommended to suppress ringing.

How many drain pins does PMN70EPEX have, and why are they multiplexed?

PMN70EPEX has four dedicated drain terminals (pins 1, 2, 5, and 6) in its TSOP6 package. This multiplexing reduces package inductance, improves current sharing, and enhances thermal conduction to the PCB copper pour-directly supporting its 1.4 W power dissipation rating on standard FR4 layouts.

Is PMN70EPEX qualified for automotive applications?

No. Per Nexperia's legal disclaimers (Section 15), PMN70EPEX is not automotive-qualified. It is not tested or warranted for AEC-Q101 stress conditions, nor validated for life-critical automotive use. For automotive designs, consult Nexperia's dedicated automotive-grade P-channel MOSFET portfolio, such as the PMN10XN series.

PMN70EPEX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-74, SOT-457

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 4.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 3.3A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 370 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 570mW (Ta), 6.25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

PMN70EPEX FAQ

1.How can I place an order for PMN70EPEX through Aetrix?

Please submit a Request for Quotation (RFQ) for PMN70EPEX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMN70EPEX reliable?

The price and inventory of PMN70EPEX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMN70EPEX is usually 5 days.

3.What payment methods are accepted for PMN70EPEX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMN70EPEX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMN70EPEX?

PMN70EPEX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMN70EPEX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMN70EPEX?

For technical support, including PMN70EPEX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMN70EPEX requirements.

6.How does Aetrix verify that PMN70EPEX is sourced from the original manufacturer or authorized distributors?

All PMN70EPEX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMN70EPEX meets industry standards.

7.What is the process for return or replacement of PMN70EPEX?

All PMN70EPEX units undergo pre-shipment inspection (PSI). If there is an issue with PMN70EPEX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMN70EPEX part is unused and in its original packaging.

Return procedure for PMN70EPEX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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