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Nexperia USA Inc. PMN80XP,115
- Part No.:
- PMN80XP,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-74, SOT-457
- Datasheet:
-
PMN80XP,115.pdf
- Description:
- MOSFET P-CH 20V 2.5A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:5,750
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Product details
Overview
PMN80XP from Nexperia is a P-channel enhancement-mode Trench MOSFET in SOT457 (TSOP6) package, rated for −20 V drain-source voltage, 80 mΩ RDS(on) at VGS = −4.5 V and ID = −2.5 A, and optimized for high-side load switching in space-constrained industrial control circuits.
For engineers reviewing the PMN80XP datasheet, PMN80XP pinout, PMN80XP application, or PMN80XP equivalent, this device is selected for low-voltage logic-level gate drive compatibility, fast switching performance (td(off) = 120 ns), and thermal robustness on standard FR4 PCBs with 6 cm² drain pad.
Technical Context
This P-channel MOSFET uses Trench MOSFET technology to achieve low on-resistance while maintaining stable threshold voltage (VGS(th) = −0.45 to −1.0 V) and low gate charge (QG(tot) = 5–7.5 nC). Its symmetrical multi-drain pin configuration (pins 1,2,5,6) supports high-current routing and thermal spreading.
The device operates within −55 °C to 150 °C junction temperature range, with Rth(j-a) as low as 73 K/W when mounted on FR4 with 6 cm² drain pad. It features integrated source-drain diode (VSD = −0.8 to −1.2 V at IS = −1 A) and exhibits low output capacitance (Coss = 63 pF) for reduced switching losses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V - Maximum blocking voltage for high-side switch applications up to 20 V rail |
| RDS(on) | 80 mΩ (typ) at VGS = −4.5 V - Enables <100 mW conduction loss at 2.5 A continuous current |
| ID | −3.2 A (pulsed, t ≤ 5 s) - Supports short-duration surge loads without thermal runaway |
| QG(tot) | 5–7.5 nC - Low gate charge enables efficient driving from 3.3 V/5 V microcontrollers |
| VGS(th) | −0.45 to −1.0 V - Guaranteed turn-on with logic-level gate drive down to 1.8 V |
| Ciss | 550 pF - Input capacitance compatible with standard gate driver rise/fall time targets |
| Ptot | 925 mW (with 6 cm² drain pad) - Thermal design margin for sustained operation at ambient ≤ 70 °C |
Pinout & Package
Package: SOT457 (TSOP6), surface-mount plastic package with exposed drain paddle; 3.0 mm × 2.5 mm footprint, 1.3 mm height, lead pitch 0.65 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 D | Drain | Primary high-side current path; electrically and thermally connected to pins 2,5,6 |
| 2 D | Drain | Parallel drain connection for enhanced current handling and thermal dissipation |
| 3 G | Gate | Logic-level control input; requires no level-shifting for 1.8–5 V MCU outputs |
| 4 S | Source | Reference node for gate drive; tied to system VCC in high-side configuration |
| 5 D | Drain | Additional drain terminal to reduce trace inductance and improve thermal coupling to PCB |
| 6 D | Drain | Fourth drain connection supporting >3 A pulsed current with minimal IR drop |
Key Features
| Feature | Design Value |
|---|---|
| RDS(on) specified at 1.8 V VGS | Enables reliable turn-on from ultra-low-voltage logic (e.g., Li-ion powered systems) |
| Trench MOSFET architecture | Delivers 20% lower RDS(on) vs planar P-MOSFETs of same die size and voltage rating |
| Multi-drain pin layout (4× D) | Reduces effective package resistance by ≥30% and lowers thermal impedance to PCB |
| Fast switching (tf = 50 ns) | Minimizes transition losses in PWM-driven loads such as LED strings or solenoids |
| Integrated source-drain diode | Provides controlled freewheeling path in inductive load switching without external diode |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
Use Scenario: Driving 12 V electromechanical relay coils in PLC I/O modules. IC Role / Device Role / Timing Role: High-side switch controlling coil energization/de-energization with precise timing. Use Value: Low RDS(on) ensures <100 mW power loss at 2.5 A coil current; fast turn-off (120 ns delay) prevents contact bounce during de-energization. |
Use Scenario: Transmitting TTL/CMOS signals across 50 Ω backplanes in test equipment. IC Role / Device Role / Timing Role: Active pull-up switch enabling bidirectional line termination and slew-rate control. Use Value: 50 ns fall time and 550 pF Ciss support clean 20 MHz digital edge transitions without overshoot. |
| High-Side Load Switch | Switching Power Supply Sync Rectifier |
Use Scenario: Enabling/disabling 5 V or 12 V power rails in portable medical devices. IC Role / Device Role / Timing Role: Controlled power path switch with inrush current limiting via gate resistor. Use Value: −0.75 V typical VGS(th) allows direct drive from 3.3 V GPIO; 6 cm² pad mounting sustains 2.5 A continuous load at 70 °C ambient. |
Use Scenario: Replacing Schottky diode in 12 V → 5 V buck converter secondary side. IC Role / Device Role / Timing Role: Synchronous rectifier controlled by PWM controller's complementary output. Use Value: 80 mΩ RDS(on) cuts conduction loss by >60% vs 0.4 V Schottky; low QGD (0.9 nC) minimizes shoot-through risk during dead-time transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2053LVT-7 | RDS(on) = 100 mΩ @ VGS = −4.5 V; SOT-23-3 package; single drain terminal | Limited to ≤1.5 A continuous due to higher RDS(on) and inferior thermal dissipation | Choose only if board space is constrained and peak current < 1.2 A |
| SI2301BDS-T1-GE3 | RDS(on) = 90 mΩ @ VGS = −4.5 V; SOT-23 package; no multi-drain configuration | Higher thermal resistance (Rth(j-a) ≈ 250 K/W) limits use to low-duty-cycle switching | Acceptable for intermittent relay driving but not for continuous 2.5 A load switching |
Compared with DMN2053LVT-7 and SI2301BDS-T1-GE3, PMN80XP delivers superior thermal performance via its 4-pin drain layout and lower RDS(on), making it uniquely suitable for high-reliability, high-current high-side switching where PCB area permits TSOP6.
Availability
PMN80XP is available at Aetrix Electronics and suitable for industrial control systems, portable instrumentation, and embedded power management requiring stable component supply, consistent parametric performance, and long-term production continuity.
Supply support for PMN80XP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs.
The PMN80XP belongs to Nexperia's TrenchMOS P-channel portfolio, engineered specifically for logic-level driven high-side switching in space-sensitive consumer and industrial applications where efficiency, thermal headroom, and gate drive simplicity are critical.
FAQ
What is the maximum continuous drain current for PMN80XP at 100 °C ambient temperature?
The maximum continuous drain current is −1.6 A at Tamb = 100 °C, as specified in Table 5 (Limiting Values) under VGS = −4.5 V condition. This derating reflects thermal limits of the SOT457 package on standard FR4 PCBs without extended copper pour.
Can PMN80XP be used with 1.8 V logic-level gate drive?
Yes - VGS(th) is guaranteed between −0.45 V and −1.0 V, and RDS(on) is explicitly characterized at VGS = −1.8 V (120–156 mΩ at ID = −1.1 A), confirming full enhancement and usable on-resistance at 1.8 V drive.
Why does PMN80XP have four drain pins (1,2,5,6)?
The four drain terminals reduce package resistance and inductance, improve current sharing, and enhance thermal conduction from die to PCB copper. This layout lowers effective RDS(on) in-system and improves reliability under pulsed current stress, as validated in Nexperia's thermal characterization data.
Is PMN80XP suitable for synchronous rectification in DC-DC converters?
Yes - with 80 mΩ RDS(on), 63 pF Coss, and 0.9 nC QGD, it meets key requirements for 12 V input buck converters operating up to 500 kHz. Its −20 V rating and fast switching (tf = 50 ns) enable efficient replacement of Schottky diodes in medium-power applications.
PMN80XP,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 102mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.5 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 550 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 385mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
PMN80XP,115 FAQ
1.How can I place an order for PMN80XP,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMN80XP,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMN80XP,115 reliable?
The price and inventory of PMN80XP,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMN80XP,115 is usually 5 days.
3.What payment methods are accepted for PMN80XP,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMN80XP,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMN80XP,115?
PMN80XP,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMN80XP,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMN80XP,115?
For technical support, including PMN80XP,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMN80XP,115 requirements.
6.How does Aetrix verify that PMN80XP,115 is sourced from the original manufacturer or authorized distributors?
All PMN80XP,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMN80XP,115 meets industry standards.
7.What is the process for return or replacement of PMN80XP,115?
All PMN80XP,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMN80XP,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMN80XP,115 part is unused and in its original packaging.
Return procedure for PMN80XP,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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