Nexperia USA Inc. PMPB08R4VPHP

Overview

PMPB08R4VP from Nexperia is a P-channel enhancement-mode Trench MOSFET in a DFN2020M-6 (SOT1220-2) package, designed for high-efficiency power switching in space-constrained portable electronics. It features a 12 V drain-source rating, 8.4 mΩ typical R_DS(on) at V_GS = −4.5 V and I_D = −12 A, and −16.7 A continuous drain current capability at T_amb = 25 °C - enabling use as a charging switch or load switch in battery-powered systems.

For engineers reviewing the PMPB08R4VP datasheet, PMPB08R4VP pinout, PMPB08R4VP application, or PMPB08R4VP equivalent, key selection criteria include its low threshold voltage (−0.47 to −0.9 V), ultra-thin 2 × 2 × 0.65 mm thermal-enhanced package with exposed drain pad, and verified performance in DC-DC converter high-side switching and portable device power management circuits.

Technical Context

This device operates as a normally-off P-channel MOSFET with gate-controlled conduction between source and drain terminals. Its Trench MOSFET architecture delivers low on-resistance and fast switching dynamics, supported by 27 nC total gate charge and 7.6 nC gate-drain charge under V_DS = −6 V, I_D = −10 A conditions.

The DFN2020M-6 package integrates five drain terminals and one source terminal on the bottom side, plus a single gate terminal - optimized for thermal dissipation via an exposed drain pad soldered directly to a 6 cm² PCB copper area. Junction-to-solder-point thermal resistance is as low as 6 K/W, enabling stable operation up to 150 °C junction temperature.

Key Specifications

Pinout & Package

DFN2020M-6 (SOT1220-2) is a leadless, ultra-thin surface-mount package measuring 2.0 × 2.0 × 0.65 mm with an exposed drain pad on the bottom side for thermal and electrical connection. The top-side marking "ZD" identifies the PMPB08R4VP variant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with DMG1012T and SI2301DDS, PMPB08R4VP offers superior thermal performance and 5× lower R_DS(on), making it the only option capable of sustaining 12 A in 2 × 2 mm area with <1 W power dissipation - essential for next-generation portable power architectures.

Availability

PMPB08R4VP is available at Aetrix Electronics and suitable for USB-C charging switches, DC-DC converter high-side switches, and portable device power management requiring stable component supply across high-volume consumer electronics production cycles.

Supply support for PMPB08R4VP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

The PMPB08R4VP belongs to Nexperia's TrenchMOS portfolio - engineered specifically for space- and thermally constrained battery-powered applications demanding low R_DS(on), logic-level gate drive, and robust transient performance.

FAQ

What is the maximum continuous drain current for PMPB08R4VP at 100 °C ambient temperature?

The maximum continuous drain current is −7.6 A at T_amb = 100 °C, as specified in Table 5 (Limiting values). This derating reflects thermal limits imposed by the DFN2020M-6 package's ability to dissipate heat into a standard FR4 PCB with 6 cm² drain pad area - not a device failure limit but a safe operating boundary under defined mounting conditions.

Can PMPB08R4VP be used with 3.3 V gate drive?

No - PMPB08R4VP requires negative gate-source voltage for turn-on, so a 3.3 V positive signal alone cannot activate it. It must be driven with a gate voltage ≤ −1.8 V relative to source (e.g., using a charge pump or level shifter), as V_GS(th) ranges from −0.47 V to −0.9 V and R_DS(on) rises sharply above −1.8 V.

Is the exposed drain pad electrically connected to the drain terminals?

Yes - pins 1, 2, 5, 6, and 7 are internally shorted to the exposed bottom-side drain pad, forming a single low-impedance drain node. This configuration provides both electrical conduction and thermal conduction paths, and the pad must be soldered to a dedicated PCB copper pour to achieve rated R_th(j-sp) and current capacity.

What is the safe operating area (SOA) limitation at DC operation with T_sp = 25 °C?

At DC operation and solder point temperature of 25 °C, the SOA is limited to 12.5 W total power dissipation (Table 5), corresponding to −12 A at −1.04 V V_DS or −7.6 A at −1.65 V V_DS. This boundary is defined by thermal saturation, not avalanche or breakdown, and assumes optimal PCB thermal design with 6 cm² drain pad.