Nexperia USA Inc. PMPB08R6ENX

Overview

PMPB08R6ENX from Nexperia is a 30 V, N-channel Trench MOSFET in DFN2020M-6 (SOT1220-2) package, designed as a logic-level-compatible low-side load switch with R_DS(on) = 8.6 mΩ at V_GS = 10 V and I_D = 11 A (T_j = 25 °C), optimized for high-speed switching in space-constrained PCBs.

For engineers reviewing the PMPB08R6ENX datasheet, PMPB08R6ENX pinout, PMPB08R6ENX application, or PMPB08R6ENX equivalent, this device serves as a thermally enhanced, ultra-thin SMD power switch for relay drivers, line drivers, and compact DC-DC load control where drain-source on-resistance, fast switching (t_r = 10 ns), and FR4-mountable thermal performance are critical selection criteria.

Technical Context

This MOSFET employs Trench Superjunction Technology to achieve low R_DS(on) and high transconductance (g_fs = 34 S), enabling efficient conduction and rapid gate-driven transitions. Its exposed drain pad and 6 cm² mounting pad reduce R_th(j-sp) to 6–10 K/W, supporting continuous I_D = 11 A at T_amb = 25 °C.

The device features a gate threshold voltage of 1.0–2.0 V (V_GS(th)), ensuring reliable turn-on with 3.3 V or 5 V logic, and integrates a source-drain diode with V_SD = 0.75–1.2 V at I_S = 1.9 A, suitable for freewheeling in inductive loads without external diodes.

Key Specifications

Pinout & Package

DFN2020M-6 (SOT1220-2) is a leadless, ultra-thin (0.65 mm height), thermally enhanced plastic package with an exposed drain pad occupying pins 1, 2, 5, 6, and 7; body dimensions 2.0 × 2.0 × 0.65 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Compared with DMN2004LK-7 and PSMN017-30YL, PMPB08R6ENX delivers optimal balance of ultra-small size, 3.3 V logic compatibility, and 11 A capability-making it uniquely suited for miniaturized, high-efficiency load switching where thermal pad integration and fast edge rates are prioritized over raw current headroom.

Availability

PMPB08R6ENX is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side load switches, and synchronous buck converter applications requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for PMPB08R6ENX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

This MOSFET belongs to Nexperia's TrenchMOS® logic-level portfolio, engineered specifically for space-constrained, thermally demanding power management in consumer, industrial, and communications equipment.

FAQ

What is the maximum continuous drain current for PMPB08R6ENX under standard PCB conditions?

The maximum continuous drain current is 11 A at T_amb = 25 °C when mounted on an FR4 PCB with a 6 cm² tin-plated copper drain pad. At 100 °C ambient, derated current drops to 7 A per datasheet Table 5; thermal design must account for R_th(j-a) = 57–66 K/W in that configuration.

Can PMPB08R6ENX be driven directly from a 3.3 V microcontroller GPIO?

Yes. With V_GS(th) = 1.0–2.0 V and guaranteed R_DS(on) ≤ 14 mΩ at V_GS = 4.5 V, the device fully enhances at 3.3 V, delivering ≤200 mΩ on-resistance at low current and supporting reliable switching up to ~5 A in typical applications without gate boosting.

Is the exposed drain pad electrically isolated from the package substrate?

No. Pins 1, 2, 5, 6, and 7-and the entire exposed bottom copper pad-are internally connected to the drain terminal. This requires careful PCB layout: the drain pad must be routed to the high-side power net and thermally coupled to a dedicated copper pour, not grounded or floating.

What is the peak pulsed drain current rating, and under what conditions is it valid?

The peak pulsed drain current is 44 A, specified for a single pulse with duration ≤10 µs at T_amb = 25 °C. This rating assumes junction temperature remains within safe limits during the pulse; actual usable peak current depends on prior thermal history and PCB thermal mass, as shown in Figure 3's SOA curves.