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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMPB09R5TPX

Name: PMPB09R5TPX
Brand: Nexperia USA Inc.
SKU: PMPB09R5TPX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMPB09R5TPX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: PMPB09R5TPX.pdf

Description:: SMALL SIGNAL MOSFET FOR MOBILE

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PMPB09R5TPX from Nexperia is a 20 V, P-channel enhancement-mode Trench MOSFET in a DFN2020M-6 (SOT1220-2) leadless ultra-thin SMD package, optimized for high-efficiency power switching in space-constrained portable electronics. It delivers 9.5 mΩ R_DS(on) at V_GS = −4.5 V and I_D = −10.5 A (T_j = 25 °C), supports −15 A continuous drain current under pulsed conditions, and features an exposed drain pad for enhanced thermal conduction in battery-powered DC-DC converters.

For engineers reviewing the PMPB09R5TPX datasheet, PMPB09R5TPX pinout, PMPB09R5TPX application, or PMPB09R5TPX equivalent, key selection criteria include low threshold voltage (−0.75 V typ), thermal resistance to solder point (6–10 K/W), peak drain current capability (−42 A), and compatibility with FR4 PCBs using a 6 cm² drain mounting pad.

Technical Context

This P-channel MOSFET employs Trench technology to achieve low on-resistance and fast switching performance while maintaining robust gate oxide integrity. Its −0.75 V typical V_GS(th) enables direct drive from 1.8 V and 2.5 V logic rails, and its −20 V V_DS rating supports operation across common Li-ion battery voltage ranges (up to 3S configurations).

The device integrates five drain terminals and two source terminals in a 2 × 2 × 0.65 mm footprint, with symmetrical thermal pad layout enabling uniform heat spreading. Dynamic parameters-including 19.5 nC total gate charge, 5.2 nC Q_GD, and 13 ns rise time-support efficient operation in synchronous buck and load-switch topologies up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V - Maximum blocking voltage compatible with 3-cell Li-ion battery systems (≤12.6 V nominal) and 15 V rail applications.
R_DS(on)	9.5 mΩ @ V_GS = −4.5 V, I_D = −10.5 A, T_j = 25 °C - Enables <100 mW conduction loss at 10 A, critical for portable device efficiency.
I_D (continuous)	−10.5 A @ T_amb = 25 °C, t ≤ 5 s - Supports sustained high-current loads in power management ICs and charging switches.
Q_G(tot)	19.5 nC - Low gate charge reduces driver power demand and switching losses in high-frequency DC-DC stages.
R_th(j-sp)	6–10 K/W - Thermal resistance from junction to solder point confirms effective heat transfer to PCB copper, enabling compact thermal design.
V_GS(th)	−0.75 V typ - Ensures reliable turn-on with 1.8 V GPIO or low-voltage PMIC outputs without level-shifting circuitry.
C_iss	1730 pF - Input capacitance value informs gate driver sizing and impacts turn-on timing in load-switch applications.

Pinout & Package

DFN2020M-6 (SOT1220-2) is a 2 mm × 2 mm × 0.65 mm leadless thermally enhanced plastic package with an exposed drain pad on the bottom side. The package uses six terminals arranged in a single-row configuration with dual-source and quintuple-drain connectivity for optimal current sharing and thermal dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1	Drain	Primary high-current output path; electrically and thermally connected to exposed pad for PCB-level heat sinking.
2	Drain	Parallel drain connection to reduce current density and improve reliability under high-pulse loads.
3	Gate	Control input requiring <100 nA leakage; driven by low-voltage logic with minimal external gate resistor needed.
4	Source	Reference node for gate drive; tied to system ground or battery negative in high-side switch configurations.
5	Drain	Third drain terminal enhancing current handling and reducing package inductance in high-speed switching.
6	Source	Second source terminal providing low-inductance return path and improving stability in high-dI/dt applications.

Key Features

Feature	Design Value
Low threshold voltage	V_GS(th) = −0.75 V typ enables direct interface with 1.8 V/2.5 V microcontrollers and PMICs without gate boosting.
Thermally enhanced DFN package	Exposed drain pad + 6 cm² mounting area achieves R_th(j-a) = 29–33 K/W, supporting >3 W continuous dissipation on standard FR4.
Trench MOSFET architecture	Delivers 9.5 mΩ R_DS(on) in 2 × 2 mm footprint-40% lower on-resistance than planar equivalents at same voltage class.
Ultra-thin profile	0.65 mm max height allows integration into slim consumer devices including smartphones, wearables, and ultrabooks.
High peak current capability	−42 A IDM rating supports surge currents during hot-plug events and inrush limiting in USB-C PD applications.

Applications

Charging Switch

DC-DC Converter High-Side Switch

Use Scenario: Bidirectional charging control in USB-C power delivery circuits where reverse current blocking and low-loss path selection are required.

IC Role / Device Role / Timing Role: P-channel load switch managing battery-to-port and port-to-battery current flow with fast turn-off (<131 ns td(off)) to prevent backfeed.

Use Value: 9.5 mΩ R_DS(on) minimizes voltage drop and power loss during 3 A–5 A charging, extending runtime and reducing thermal stress on PCB traces.

Use Scenario: High-side synchronous rectifier in buck converters powering SoCs and FPGAs in portable computing platforms.

IC Role / Device Role / Timing Role: Main power switch operating at 300–500 kHz with low Q_GD/Q_G ratio ensuring clean turn-off and reduced shoot-through risk.

Use Value: 5.2 nC Q_GD and 13 ns rise time enable efficient switching with minimal gate driver overhead and reduced EMI generation.

Battery Protection Circuit

Power Management Unit (PMU) Load Switch

Use Scenario: Overcurrent and short-circuit protection in multi-cell battery packs used in tablets and power tools.

IC Role / Device Role / Timing Role: Primary discharge path switch with fast fault response; integrated body diode provides reverse polarity protection.

Use Value: −1.2 V V_SD forward drop at −1.8 A ensures low-loss reverse conduction during pack insertion or polarity reversal events.

Use Scenario: Independent rail enable/disable in PMUs for subsystems such as display backlight, camera module, or RF front-end.

IC Role / Device Role / Timing Role: Standby power gate controlling 1–2 A loads with <100 µA IGSS leakage to preserve battery life during deep sleep modes.

Use Value: −100 nA IGSS at V_GS = −12 V guarantees negligible quiescent current draw, extending weeks-long standby duration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2305UX	R_DS(on) = 42 mΩ @ V_GS = −4.5 V; larger SO-8 package (4.9 × 6.0 mm); higher R_th(j-a) (62 K/W)	Suitable for board-space-tolerant industrial designs but not portable devices requiring <2 mm footprint	Select when board area is unconstrained and legacy SO-8 assembly lines are in use.
SI2301DDS	R_DS(on) = 115 mΩ @ V_GS = −2.5 V; SOT-23 package; no exposed thermal pad	Limited to sub-1 A loads; inadequate for >2 A charging or converter primary switching	Choose only for ultra-low-cost, low-current biasing or signal-level switching-not power-path applications.

Compared with DMG2305UX and SI2301DDS, PMPB09R5TPX offers superior thermal performance, 4.4× lower on-resistance than SI2301DDS, and a 75% smaller footprint than DMG2305UX-making it uniquely suited for high-current, space-constrained portable power architectures.

Availability

PMPB09R5TPX is available at Aetrix Electronics and suitable for charging switches, DC-DC converter high-side switches, and battery protection circuits requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for PMPB09R5TPX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

The PMPB09R5TPX belongs to Nexperia's TrenchMOS portfolio designed specifically for portable power management-emphasizing low R_DS(on), ultra-thin packages, and logic-level gate drive compatibility.

FAQ

What is the maximum continuous drain current for PMPB09R5TPX at 100 °C ambient temperature?

The maximum continuous drain current is −6.6 A at T_amb = 100 °C, as specified in Table 5 (Limiting values). This derating reflects thermal constraints of the DFN2020M-6 package on standard FR4 PCBs with 6 cm² drain pad, and must be verified against actual board layout and airflow conditions.

Does PMPB09R5TPX require a gate resistor for safe operation in a 5 V logic-driven load switch?

A gate resistor is not mandatory but recommended: 10–47 Ω limits peak gate current during fast transitions and suppresses ringing caused by PCB trace inductance. With V_GS(th) = −0.75 V, the device turns fully on at 5 V drive, but uncontrolled dV/dt may induce parasitic turn-on in high-noise environments.

Can PMPB09R5TPX be used in automotive infotainment power rails?

No-PMPB09R5TPX is not automotive-qualified per Nexperia's legal disclaimers. It lacks AEC-Q101 qualification, extended temperature validation beyond 150 °C junction, and automotive-specific reliability testing. Use only in commercial or industrial portable applications.

How does the exposed drain pad affect PCB layout requirements for thermal performance?

The exposed drain pad must be connected to a minimum 6 cm² copper area on the PCB's bottom layer using ≥4 thermal vias (0.3 mm diameter, spaced ≤1 mm apart) to achieve the rated R_th(j-sp) of 6–10 K/W. Omitting this pad or undersizing the copper area increases junction temperature by >30 °C at 10 A load.

PMPB09R5TPX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 10.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 11.5mOhm @ 10.5A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 1730 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.9W (Ta), 12.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DFN2020M-6

PMPB09R5TPX FAQ

1.How can I place an order for PMPB09R5TPX through Aetrix?

Please submit a Request for Quotation (RFQ) for PMPB09R5TPX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMPB09R5TPX reliable?

The price and inventory of PMPB09R5TPX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB09R5TPX is usually 5 days.

3.What payment methods are accepted for PMPB09R5TPX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB09R5TPX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMPB09R5TPX?

PMPB09R5TPX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMPB09R5TPX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMPB09R5TPX?

For technical support, including PMPB09R5TPX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB09R5TPX requirements.

6.How does Aetrix verify that PMPB09R5TPX is sourced from the original manufacturer or authorized distributors?

All PMPB09R5TPX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB09R5TPX meets industry standards.

7.What is the process for return or replacement of PMPB09R5TPX?

All PMPB09R5TPX units undergo pre-shipment inspection (PSI). If there is an issue with PMPB09R5TPX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMPB09R5TPX part is unused and in its original packaging.

Return procedure for PMPB09R5TPX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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