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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMPB100ENEX

Name: PMPB100ENEX
Brand: Nexperia USA Inc.
SKU: PMPB100ENEX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMPB100ENEX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: PMPB100ENEX.pdf

Description:: MOSFET DFN2020MD-6

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PMPB100ENEX from Nexperia is a 30 V, N-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) leadless surface-mount package, rated for continuous drain current of 3.9 A at 25 °C ambient and 2.4 A at 100 °C ambient, with R_DS(on) of 54 mΩ (typ) at V_GS = 10 V and T_j = 25 °C, used as a low-side load switch in compact power management circuits.

For engineers reviewing the PMPB100ENEX datasheet, PMPB100ENEX pinout, PMPB100ENEX application, or PMPB100ENEX equivalent, key selection criteria include its 175 °C maximum junction temperature, ultra-thin 2 × 2 × 0.65 mm DFN package with solderable side pads, ESD protection >2 kV HBM, and validated performance in high-speed line driving and relay control under thermally constrained PCB layouts.

Technical Context

This device employs Trench MOSFET technology to achieve low on-resistance and fast switching characteristics, with gate threshold voltage (V_GS(th)) tightly specified between 1.0 V and 2.5 V at T_j = 25 °C, enabling reliable turn-on with standard logic-level drive. Its drain-source breakdown voltage (V_(BR)DSS) is guaranteed at 30 V, supporting operation across 3.3 V, 5 V, and 12 V rail systems.

The DFN2020MD-6 package features five drain terminals and two source terminals arranged for optimized thermal conduction and current sharing, with a thermal resistance from junction to solder point (R_th(j-sp)) of 12–15 K/W - critical for sustained 3.9 A operation on FR4 PCBs with 6 cm² copper pad area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - defines absolute upper limit for drain-source voltage in circuit design and layout clearance.
R_DS(on)	54 mΩ typ at V_GS = 10 V, I_D = 3.9 A, T_j = 25 °C - determines conduction loss and thermal rise in low-side switching applications.
I_D (continuous)	3.9 A at T_amb = 25 °C - specifies usable DC current capability on standard FR4 PCB with 6 cm² drain pad.
Q_G(tot)	3.5–5 nC - governs gate drive energy requirement and switching speed in PWM or digital control interfaces.
T_j(max)	175 °C - enables operation in high-temperature environments such as automotive under-hood or industrial motor drives.
V_GS(th)	1.5 V typ (1.0–2.5 V range) - ensures compatibility with 1.8 V, 3.3 V, and 5 V microcontroller GPIO outputs without level-shifting.
C_iss	157 pF - impacts high-frequency gate drive impedance and EMI behavior in fast-switching topologies.

Pinout & Package

DFN2020MD-6 (SOT1220) is a 2.0 × 2.0 × 0.65 mm leadless thermally enhanced plastic package with exposed drain paddle and solderable side terminals for optical inspection and improved thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6, 7	Drain (D)	Five parallel drain connections - reduce current density per terminal and lower effective R_DS(on) in PCB layout.
3	Gate (G)	Single gate input - requires <5 nC total charge for full enhancement; compatible with standard CMOS drivers.
4, 8	Source (S)	Two source terminals - provide low-inductance return path and support Kelvin sensing in precision current monitoring designs.

Key Features

Feature	Design Value
Extended junction temperature rating	175 °C max - allows deployment in sealed enclosures or near heat sources without derating penalties beyond ambient limits.
Ultra-thin DFN package	0.65 mm height - enables use in space-constrained portable electronics and stacked PCB assemblies where Z-height is critical.
Tin-plated side pads	100 % solderable - supports automated optical inspection (AOI) and improves solder joint reliability versus non-plated alternatives.
ESD robustness	>2 kV HBM - reduces need for external transient suppression in board-level ESD testing per IEC 61000-4-2 Level 4.
Trench MOSFET architecture	Low R_DS(on) × Q_G figure-of-merit - balances conduction and switching losses for efficient 100 kHz–1 MHz DC-DC and load-switching operation.

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Driving electromagnetic relays in PLC I/O modules with 12 V/24 V control rails and frequent switching cycles.

IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current up to 3.9 A peak, with fast turn-on (<3 ns delay) and turn-off (<23 ns total) to minimize contact arcing.

Use Value: Eliminates need for discrete flyback diode due to integrated body diode with V_SD = 0.8–1.2 V, reducing BOM count and PCB footprint.

Use Scenario: Transmitting TTL/CMOS logic signals over 50 Ω coaxial or twisted-pair lines in test equipment and data acquisition systems.

IC Role / Device Role / Timing Role: Active pull-down element in push-pull output stage, delivering <19 ns rise/fall times with 6 Ω external gate resistor.

Use Value: Achieves clean signal edges at >10 MHz edge rates while maintaining <27 pF Crss to minimize crosstalk and timing skew.

Low-Side Load Switch

Switching Power Circuit

Use Scenario: Enabling/disabling power to USB peripherals, sensors, or display backlights in battery-powered IoT nodes.

IC Role / Device Role / Timing Role: Controlled power path switch with <10 µA I_DSS leakage at 30 V - preserves battery life during deep sleep modes.

Use Value: Supports hot-swap sequencing via controlled gate ramping; R_DS(on) drift <30 % from 25 °C to 175 °C ensures stable current limiting across temperature.

Use Scenario: Synchronous rectification in buck converters for FPGA core supplies or PoE-powered devices operating at 500 kHz–1 MHz.

IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode, leveraging low 54 mΩ R_DS(on) and 34 pF C_oss for reduced conduction and switching loss.

Use Value: Enables >92 % efficiency at 3.3 V/3 A output with minimal thermal margin - validated on FR4 with 6 cm² drain pad per datasheet conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	R_DS(on) = 26 mΩ @ 10 V (lower), but larger TSOP-6 package (3 × 3 mm) and higher Q_G = 7.5 nC.	Better conduction efficiency at high current, but less suitable for ultra-thin or high-density layouts.	Select when thermal budget permits larger footprint and lower R_DS(on) outweighs size constraints.
SI2302DS-T1-BE3	R_DS(on) = 80 mΩ @ 4.5 V (higher), SOT-23 package (3 × 3 × 1.1 mm), no side-pad solderability.	Lower cost and wider availability, but limited to ≤2 A continuous current and lacks AOI-friendly construction.	Choose for cost-sensitive, low-current (<2 A), non-automated assembly applications where thermal performance is secondary.

Compared with DMN3026LSD-13 and SI2302DS-T1-BE3, PMPB100ENEX delivers optimal balance of ultra-compact size, 175 °C operation, and verified 3.9 A capability on standard FR4 - making it preferred for thermally dense, space-limited industrial and portable designs requiring long-term reliability without thermal derating.

Availability

PMPB100ENEX is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line drivers, low-side load switches, and switching power circuits requiring stable component supply and consistent parametric performance across production batches.

Supply support for PMPB100ENEX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

PMPB100ENEX belongs to Nexperia's TrenchMOS portfolio, engineered specifically for space-constrained, thermally demanding power switching applications in industrial automation, consumer electronics, and communications infrastructure.

FAQ

What is the maximum continuous drain current for PMPB100ENEX at 100 °C ambient temperature?

The maximum continuous drain current is 2.4 A at T_amb = 100 °C, measured on an FR4 PCB with single-sided copper, tin-plated finish, and a 6 cm² mounting pad for the drain. This value reflects thermal derating based on R_th(j-a) = 36–45 K/W under those specific board conditions.

Does PMPB100ENEX require a gate resistor for stable switching?

A gate resistor is recommended to control dV/dt and prevent ringing; typical evaluation uses R_G(ext) = 6 Ω, yielding t_r = 19 ns and t_f = 8 ns. Lower values increase switching speed but risk overshoot; higher values reduce EMI at the cost of increased switching loss.

Can PMPB100ENEX be used in automotive applications?

No - PMPB100ENEX is not automotive-qualified. It is specified for industrial and consumer use only. Nexperia explicitly states in its legal disclaimers that non-automotive qualified products are unsuitable for safety-critical or life-support systems, including automotive applications.

How is thermal performance affected by PCB layout for PMPB100ENEX?

Thermal resistance drops significantly with proper layout: R_th(j-sp) is 12–15 K/W with a 6 cm² drain pad, versus 67–77 K/W with standard footprint. Use of internal copper planes and multiple thermal vias under the exposed drain paddle further improves heat dissipation in production designs.

PMPB100ENEX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 5.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 72mOhm @ 3.9A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 157 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.3W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DFN2020MD-6

PMPB100ENEX FAQ

1.How can I place an order for PMPB100ENEX through Aetrix?

Please submit a Request for Quotation (RFQ) for PMPB100ENEX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMPB100ENEX reliable?

The price and inventory of PMPB100ENEX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB100ENEX is usually 5 days.

3.What payment methods are accepted for PMPB100ENEX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB100ENEX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMPB100ENEX?

PMPB100ENEX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMPB100ENEX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMPB100ENEX?

For technical support, including PMPB100ENEX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB100ENEX requirements.

6.How does Aetrix verify that PMPB100ENEX is sourced from the original manufacturer or authorized distributors?

All PMPB100ENEX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB100ENEX meets industry standards.

7.What is the process for return or replacement of PMPB100ENEX?

All PMPB100ENEX units undergo pre-shipment inspection (PSI). If there is an issue with PMPB100ENEX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMPB100ENEX part is unused and in its original packaging.

Return procedure for PMPB100ENEX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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