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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMPB10ENZ

Name: PMPB10ENZ
Brand: Nexperia USA Inc.
SKU: PMPB10ENZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMPB10ENZ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: PMPB10ENZ.pdf

Description:: MOSFET N-CH 30V 10A DFN2020MD-6

Quantity:: RFQ Add To RFQ list

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Inventory:7,079

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Product details

Overview

PMPB10ENZ from Nexperia is a 30 V, N-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) package, designed as a logic-level power switch for high-efficiency DC-to-DC conversion and battery-powered load control. It delivers 14 A continuous drain current at 25 °C, exhibits 10 mΩ R_DS(on) at V_GS = 10 V, and supports fast switching with 9 ns turn-on delay and 17 ns turn-off delay - enabling compact, thermally efficient power management in portable electronics.

For engineers reviewing the PMPB10ENZ datasheet, PMPB10ENZ pinout, PMPB10ENZ application, or PMPB10ENZ equivalent, key selection criteria include its ultra-thin 2 × 2 × 0.65 mm leadless package with side-wettable flanks for automated optical inspection, logic-level gate drive compatibility down to 4.5 V, and validated thermal performance on FR4 PCBs with 6 cm² drain pad.

Technical Context

This MOSFET employs Trench Superjunction technology to achieve low R_DS(on) and high cell density in a miniature DFN2020MD-6 footprint. Its gate threshold voltage (V_GS(th)) is tightly specified at 1.0–2.0 V, ensuring reliable turn-on with standard 3.3 V or 5 V logic controllers.

The device integrates a robust body diode with 0.8–1.2 V forward voltage at 2.2 A, and features low gate charge (Q_G(tot) = 13.7–20.6 nC) and minimal output capacitance (C_oss = 155 pF), supporting high-frequency synchronous rectification and hard-switching topologies up to several MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum drain-source voltage - defines safe blocking capability in 12 V/24 V rail applications
R_DS(on)	10 mΩ typical at V_GS = 10 V, I_D = 9 A, T_j = 25 °C - enables <1 W conduction loss at 10 A
I_D (continuous)	14 A at T_amb = 25 °C, t ≤ 5 s - supports high-pulse load switching in power banks and USB PD circuits
Q_G(tot)	13.7–20.6 nC - determines gate driver strength requirement and switching energy loss
T_j max	150 °C - sets thermal derating boundary for PCB layout and heatsinking decisions
R_th(j-sp)	5–10 K/W junction-to-solder-point - enables accurate transient thermal modeling for reflow and power cycling reliability

Pinout & Package

Package: DFN2020MD-6 (SOT1220), 2.0 × 2.0 × 0.65 mm, leadless, thermal-enhanced ultra-thin SMD with side-wettable flanks for solder joint inspection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6, 7	Drain (D)	Five parallel drain terminals - maximize current handling and minimize thermal resistance via large copper area connection
3	Gate (G)	Single gate input - requires <20.6 nC charge for full enhancement; compatible with 3.3 V microcontroller GPIO
4, 8	Source (S)	Two source terminals - provide low-inductance return path and support Kelvin sensing in precision current monitoring designs

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate boosters in 3.3 V systems
Trench Superjunction architecture	Enables 10 mΩ R_DS(on) in 2 mm² footprint - improves power density over planar MOSFETs by >40%
Side-wettable flanks	Exposed copper on package edges - allows AOI verification of solder fillet integrity without X-ray
Ultra-thin profile	0.65 mm max height - enables stacking in space-constrained modules like smart battery packs and wearables

Applications

Charging Switch in Portable Devices

DC-to-DC Converter High-Side Switch

Use Scenario: Bidirectional charging control in USB-C power banks with dual-cell Li-ion stacks.

IC Role / Device Role / Timing Role: N-channel high-side load switch managing charge path between input port and battery pack.

Use Value: 10 mΩ R_DS(on) limits voltage drop to <100 mV at 10 A, preserving charging efficiency and thermal headroom in sealed enclosures.

Use Scenario: Synchronous buck converter in 5 V → 3.3 V point-of-load regulation for SoC subsystems.

IC Role / Device Role / Timing Role: High-side power switch operating at 1–2 MHz with fast 9 ns t_d(on) and 17 ns t_d(off).

Use Value: Low Q_G(tot) and C_oss reduce switching losses to <150 mW at 1.5 MHz, enabling >94% efficiency at 6 A load.

Power Management in Battery-Driven Portables

Hard Disk Drive Power Sequencing

Use Scenario: System power rail enable/disable in medical handheld scanners with strict standby current budgets.

IC Role / Device Role / Timing Role: Load switch isolating main 3.7 V battery from non-critical peripherals during sleep mode.

Use Value: Gate leakage <100 nA and sub-µA IDSS ensure <1 µA total shutdown current - extends shelf life beyond 12 months.

Use Scenario: Controlled 5 V/12 V power ramp-up for 2.5″ HDD spindle motors and servo ICs.

IC Role / Device Role / Timing Role: Soft-start MOSFET limiting inrush current during spin-up phase.

Use Value: 40 A peak drain current rating handles 3× motor stall surge without avalanche failure, improving field reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	R_DS(on) = 13.5 mΩ @ 4.5 V; SO-8 package (4.9 × 6.0 mm); higher thermal resistance (R_th(j-a) ≈ 62 K/W)	Requires larger PCB area and external heatsinking for same 14 A continuous current	Preferred when through-hole or legacy SO-8 footprint is mandated and board space is not constrained
SI2302DS-T1-BE3	R_DS(on) = 48 mΩ @ 4.5 V; SOT-23 package; lower current rating (I_D = 2.6 A)	Only suitable for <3 A loads; inadequate for DC-DC primary switches or charging paths above 5 W	Appropriate only for low-power signal switching or bias rails where R_DS(on) >40 mΩ is acceptable

Compared with DMN3026LSD-13 and SI2302DS-T1-BE3, PMPB10ENZ provides superior power density (2× lower R_DS(on) per mm²), 3× lower thermal resistance than SO-8 alternatives, and verified side-wettable flank manufacturability - making it optimal for miniaturized, high-reliability portable power designs.

Availability

PMPB10ENZ is available at Aetrix Electronics and suitable for portable power management, DC-to-DC converter design, and battery charging circuitry requiring stable component supply and long-term industrial availability.

Supply support for PMPB10ENZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential system functionality, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

PMPB10ENZ belongs to Nexperia's TrenchMOS logic-level power MOSFET family, engineered specifically for space- and thermally constrained battery-powered applications demanding high efficiency and robust manufacturability.

FAQ

What is the maximum continuous drain current for PMPB10ENZ at 100 °C ambient temperature?

The maximum continuous drain current is 6.2 A at T_amb = 100 °C under specified mounting conditions (FR4 PCB, single-sided copper, 6 cm² drain pad). This value is derived from thermal derating curves in the datasheet and reflects real-world thermal limits when no forced airflow or heatsink is used.

Does PMPB10ENZ require a gate resistor for ESD protection or switching control?

No external gate resistor is required for ESD protection - the device has built-in gate protection diodes rated per HBM Class 2 (≥2 kV). However, a 1–10 Ω series gate resistor is recommended to dampen ringing and control dV/dt during fast switching, especially in high-frequency DC-DC converters.

Can PMPB10ENZ be used in avalanche-rated applications?

PMPB10ENZ is not characterized or guaranteed for repetitive avalanche operation. Its absolute maximum V_DS is 30 V, and the datasheet does not specify single-pulse or repetitive avalanche energy ratings. Designers must ensure V_DS never exceeds 30 V under all operating and fault conditions.

How does the side-wettable flank feature impact PCB assembly yield?

Side-wettable flanks enable automated optical inspection (AOI) of solder fillets on all five drain terminals and both source terminals, increasing defect detection rate for head-in-pillow and insufficient solder joints by >95% compared to standard DFN packages - directly improving first-pass yield in high-volume SMT lines.

PMPB10ENZ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 840 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 12.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DFN2020MD-6

PMPB10ENZ FAQ

1.How can I place an order for PMPB10ENZ through Aetrix?

Please submit a Request for Quotation (RFQ) for PMPB10ENZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMPB10ENZ reliable?

The price and inventory of PMPB10ENZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB10ENZ is usually 5 days.

3.What payment methods are accepted for PMPB10ENZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB10ENZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMPB10ENZ?

PMPB10ENZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMPB10ENZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMPB10ENZ?

For technical support, including PMPB10ENZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB10ENZ requirements.

6.How does Aetrix verify that PMPB10ENZ is sourced from the original manufacturer or authorized distributors?

All PMPB10ENZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB10ENZ meets industry standards.

7.What is the process for return or replacement of PMPB10ENZ?

All PMPB10ENZ units undergo pre-shipment inspection (PSI). If there is an issue with PMPB10ENZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMPB10ENZ part is unused and in its original packaging.

Return procedure for PMPB10ENZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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