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Nexperia USA Inc. PMPB10UPX

Part No.:
PMPB10UPX
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
6-UDFN Exposed Pad
Datasheet:
AetrixPMPB10UPX.pdf
Description:
MOSFET P-CH 12V 10A DFN2020MD-6
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,690

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Product details

Overview

PMPB10UP from Nexperia is a P-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) package, designed for high-efficiency power switching in space-constrained portable electronics. It delivers 12 V drain-source rating, 10 mΩ typical RDS(on) at VGS = −4.5 V and ID = −10 A, and supports −15 A continuous drain current at 25 °C ambient - enabling compact battery protection and charging switch circuits.

For engineers reviewing the PMPB10UP datasheet, PMPB10UP pinout, PMPB10UP application, or PMPB10UP equivalent, this device is selected for low-threshold, thermally efficient P-channel switching where side-wettable flanks support automated optical solder inspection and ultra-thin 2 × 2 × 0.65 mm footprint meets stringent PCB area budgets.

Technical Context

This MOSFET uses Trench technology to achieve low gate charge (27–40 nC total) and fast switching with 4 ns turn-on delay and 100 ns fall time under standard test conditions. Its −0.7 V typical gate threshold enables reliable turn-on from 1.8 V logic rails in battery-powered systems.

The device integrates an exposed drain pad for thermal conduction and features six terminals with three drain pins (1, 2, 5), one gate (3), and two source pins (4, 8), supporting high-current routing and PCB-level thermal management via a 6 cm² copper mounting pad.

Key Specifications

Parameter Value and Actual Design Meaning
VDS −12 V maximum - defines safe blocking voltage in reverse-polarity protection and high-side load switch configurations
RDS(on) 10 mΩ typ @ VGS = −4.5 V, ID = −10 A - enables <150 mW conduction loss at 10 A, critical for thermal budget in portable DC-DC stages
ID (cont) −15 A @ Tamb = 25 °C, t ≤ 5 s - supports short-duration peak loads in USB-C PD or battery charging paths
VGS(th) 0.7 V typ @ ID = −250 µA - ensures robust gate drive margin with 1.8 V/2.5 V microcontrollers without level shifting
QG(tot) 27–40 nC - determines gate driver power requirement and switching loss in high-frequency (>1 MHz) synchronous buck topologies
Rth(j-sp) 5–10 K/W - quantifies junction-to-solder-point thermal resistance, enabling accurate PCB thermal design with exposed drain pad

Pinout & Package

Package: DFN2020MD-6 (SOT1220), leadless, 2.0 × 2.0 × 0.65 mm body with side-wettable flanks and exposed drain pad for thermal and solder inspection performance.

Pin/Terminal Circuit Role Design Meaning
1, 2, 5, 6, 7 Drain (D) Five parallel drain terminals reduce current density and package inductance; connected to exposed metal pad for thermal dissipation
3 Gate (G) Single gate input with 13.2 Ω internal gate resistance - simplifies external gate resistor selection for EMI-controlled turn-on/turn-off
4, 8 Source (S) Two dedicated source terminals provide low-inductance return path and improve current sharing in high-di/dt applications

Key Features

Feature Design Value
Low threshold voltage VGS(th) = 0.47–0.9 V enables direct drive from 1.8 V logic without gate boosting circuitry
Side-wettable flanks Enables automated optical inspection (AOI) of solder joints on all six terminals - critical for high-yield SMT assembly
Exposed drain pad Reduces Rth(j-a) to 67–74 K/W on 6 cm² FR4 PCB - improves thermal headroom by >40 % vs. standard DFN packages
Trench MOSFET architecture Delivers 42 S forward transconductance and 2200 pF Ciss - balances switching speed and gate drive stability in 500 kHz–2 MHz converters

Applications

Portable Charging Switch DC-DC Converter High-Side Switch

Use Scenario: Bidirectional USB-C power delivery path control in smartphones and tablets, managing battery charge/discharge isolation.

IC Role / Device Role / Timing Role: P-channel high-side load switch controlling power flow between USB port and battery charger IC.

Use Value: 10 mΩ RDS(on) limits voltage drop to <100 mV at 10 A, preserving system efficiency while −12 V rating withstands transient surges during hot-plug events.

Use Scenario: Synchronous rectification in buck converters for PMICs powering application processors in wearables.

IC Role / Device Role / Timing Role: High-side P-channel switch operating at 1.5 MHz with 149 ns turn-off delay to minimize dead-time losses.

Use Value: Low QG(tot) (27–40 nC) and 7.6 nC QGD enable clean switching edge control and reduced gate driver power consumption.

Battery Management System (BMS) Hard Disk Drive Power Control

Use Scenario: Reverse polarity and overcurrent protection in single-cell Li-ion battery packs for Bluetooth earbuds.

IC Role / Device Role / Timing Role: Protection FET placed between battery terminal and system load, activated by protection IC.

Use Value: −0.6 to −1.2 V VSD forward diode drop provides low-loss reverse-current path during fault recovery, reducing thermal stress.

Use Scenario: Spin-up power sequencing and standby current cutoff for 2.5-inch HDDs in ultrabooks.

IC Role / Device Role / Timing Role: Standby power switch isolating HDD VCC rail when host controller enters low-power state.

Use Value: −1.6 A source current rating and 1 µA IDSS leakage ensure stable rail hold-off during multi-day sleep modes without battery drain.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2016LFG-7 RDS(on) = 13.5 mΩ @ −4.5 V; larger 2.0 × 2.0 × 0.75 mm package; no side-wettable flanks Lacks AOI capability and has higher thermal resistance - less suitable for high-volume portable assembly Preferred only if legacy footprint compatibility outweighs solder inspection and thermal requirements
SI2301DS-T1-BE3 RDS(on) = 115 mΩ @ −2.5 V; SOT-23 package; higher VGS(th) (1.0–2.0 V) Requires ≥2.5 V gate drive; unsuitable for 1.8 V logic interfaces and high-current (>2 A) loads Only viable for low-power always-on monitoring circuits where size and cost dominate performance needs

Compared with DMN2016LFG-7 and SI2301DS-T1-BE3, PMPB10UP uniquely combines sub-1 V threshold, 10 mΩ conduction, side-wettable flanks, and 0.65 mm profile - making it the only option qualified for high-reliability, high-density USB-C and wearable power switching.

Availability

PMPB10UP is available at Aetrix Electronics and suitable for portable charging switches, DC-DC converter high-side switches, and battery management systems requiring stable component supply across consumer electronics production cycles.

Supply support for PMPB10UP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with core expertise in advanced silicon technologies and automotive-grade qualification.

PMPB10UP belongs to Nexperia's TrenchMOS portfolio, engineered specifically for space- and thermally constrained power management in battery-powered consumer electronics - emphasizing low RDS(on), low VGS(th), and manufacturability in ultra-thin form factors.

FAQ

What is the maximum continuous drain current for PMPB10UP at 100 °C ambient temperature?

The maximum continuous drain current is −6.3 A at Tamb = 100 °C, per Table 5 Limiting Values. This derating reflects thermal constraints of the DFN2020MD-6 package on standard FR4 PCBs with 6 cm² drain pad - not a device limitation but a board-level thermal boundary condition.

Does PMPB10UP require a gate resistor for ESD-safe operation?

No external gate resistor is required for ESD protection, as the device incorporates internal gate protection structures. However, a 10–47 Ω series resistor is recommended to dampen ringing and limit peak gate current during fast switching, especially when driven by low-impedance microcontroller outputs.

Can PMPB10UP be used in linear regulation mode?

It is not recommended for sustained linear operation. The SOA curve (Figure 3) shows limited safe operating area at low VDS/high ID, and Rth(j-a) of 67–74 K/W restricts power dissipation to ≤1.7 W continuously - insufficient for most linear regulator use cases.

How does the side-wettable flank design impact reflow soldering process control?

Side-wettable flanks allow automated optical inspection (AOI) to verify solder fillet formation on all six terminals - directly improving first-pass yield in high-speed SMT lines. Reflow profiles must maintain peak temperatures ≥235 °C for 45–90 seconds to ensure full wetting, per Nexperia's SOT1220 footprint guidelines (Figure 19).

PMPB10UPX Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
12 V
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
11.5mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id:
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
40 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
2200 pF @ 6 V
FET Feature:
-
Power Dissipation (Max):
1.7W (Ta), 13mW (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DFN2020MD-6

PMPB10UPX FAQ

1.How can I place an order for PMPB10UPX through Aetrix?

Please submit a Request for Quotation (RFQ) for PMPB10UPX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMPB10UPX reliable?

The price and inventory of PMPB10UPX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB10UPX is usually 5 days.

3.What payment methods are accepted for PMPB10UPX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB10UPX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMPB10UPX?

PMPB10UPX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMPB10UPX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMPB10UPX?

For technical support, including PMPB10UPX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB10UPX requirements.

6.How does Aetrix verify that PMPB10UPX is sourced from the original manufacturer or authorized distributors?

All PMPB10UPX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB10UPX meets industry standards.

7.What is the process for return or replacement of PMPB10UPX?

All PMPB10UPX units undergo pre-shipment inspection (PSI). If there is an issue with PMPB10UPX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMPB10UPX part is unused and in its original packaging.

Return procedure for PMPB10UPX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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