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Nexperia USA Inc. PMPB10XNE,115

Part No.:
PMPB10XNE,115
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
6-UDFN Exposed Pad
Datasheet:
AetrixPMPB10XNE,115.pdf
Description:
MOSFET N-CH 20V 9A DFN2020MD-6
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,208

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Product details

Overview

PMPB10XNE from Nexperia is a single N-channel Trench MOSFET in DFN2020MD-6 (SOT1220) package, rated for 20 V drain-source voltage, 12.9 A continuous drain current at 25 °C, and 10 mΩ typical RDS(on) at VGS = 4.5 V and ID = 9 A. It serves as a high-efficiency charging switch or power switch in portable battery management systems.

For engineers reviewing the PMPB10XNE datasheet, PMPB10XNE pinout, PMPB10XNE application, or PMPB10XNE equivalent, key selection criteria include its ultra-thin 2 × 2 × 0.65 mm leadless package, 2.2 kV HBM ESD rating, exposed drain pad for thermal conduction, and validated performance in DC-DC converter high-side switching with low gate charge (23 nC typical).

Technical Context

This MOSFET employs Trench MOSFET technology to achieve low on-resistance and fast switching characteristics. Its gate threshold voltage (0.4–0.9 V) enables compatibility with 1.8 V and higher logic-level drive, while its 4.5 V RDS(on) specification targets efficient operation in 3.3 V and 5 V power rails.

The device features an integrated source-drain diode with 0.6–1.2 V forward voltage at 2 A, and exhibits 2175 pF input capacitance and 235 pF output capacitance at VDS = 10 V, supporting stable operation in synchronous buck topologies with predictable turn-on/turn-off timing (td(on) = 13 ns, tf = 50 ns).

Key Specifications

Parameter Value and Actual Design Meaning
VDS 20 V - Maximum allowable drain-to-source blocking voltage in normal operation
RDS(on) 10 mΩ (typ) at VGS = 4.5 V, ID = 9 A, Tj = 25 °C - Enables <100 mW conduction loss at 10 A load
ID (cont) 12.9 A at Tamb = 25 °C, t ≤ 5 s - Supports high-pulse current demands in portable power switches
QG(tot) 23 nC (typ) - Reduces gate drive power and enables fast switching with low external gate resistance
VGS(th) 0.65 V (typ) - Ensures reliable turn-on with 1.8 V microcontroller GPIOs without level-shifting
Tj max 150 °C - Specifies maximum junction temperature for sustained reliability under thermal stress
Rth(j-sp) 5–10 K/W - Low junction-to-solder-point thermal resistance enables direct PCB copper pad heat extraction

Pinout & Package

DFN2020MD-6 (SOT1220) is a 2.0 × 2.0 × 0.65 mm leadless, thermally enhanced plastic package with an exposed drain pad on the bottom side for optimal heat dissipation. Tin-plated side terminals support optical solder inspection and high-yield reflow assembly.

Pin/Terminal Circuit Role Design Meaning
1, 2, 5, 6, 7 Drain (D) Five parallel drain terminals connected to internal die drain metallization and exposed bottom pad - collectively handle full current path and primary thermal conduction path
3 Gate (G) Single gate terminal with low 2 Ω gate resistance - optimized for low-inductance, high-speed switching with minimal ringing
4, 8 Source (S) Two dedicated source terminals providing low-impedance return path and Kelvin sensing capability for accurate current monitoring

Key Features

Feature Design Value
ESD protection 2.2 kV HBM - Eliminates need for external ESD protection in handheld USB/charger interface circuits
Thermal design Exposed drain pad + 5-terminal drain configuration - achieves 5–10 K/W junction-to-solder-point resistance for compact thermal layout
Package footprint 2.0 × 2.0 mm area - saves >60% board space vs. comparable SO-8 or TSOP-6 MOSFETs in space-constrained wearables
Solderability 100% tin-plated side pads - ensures consistent wetting and automated optical inspection (AOI) compatibility in high-volume SMT lines
Low-voltage drive VGS(th) = 0.65 V (typ) - supports direct drive from Li-ion battery voltage (2.5–4.2 V) or 1.8 V/3.3 V logic without gate driver IC

Applications

Charging Switch for Portable Devices DC-DC Converter High-Side Switch

Use Scenario: Bidirectional USB-C power path control in smartphones and tablets, enabling simultaneous charging and peripheral power delivery.

IC Role / Device Role / Timing Role: N-channel MOSFET used as low-loss, logic-controlled power switch between battery and USB port, operating in enhancement mode with 100% duty-cycle capability.

Use Value: 10 mΩ RDS(on) limits voltage drop to <100 mV at 10 A, preserving system efficiency and minimizing thermal rise in sealed enclosures.

Use Scenario: High-frequency synchronous buck converter in portable SSDs and ultrabooks, delivering regulated 1.2 V core voltage from 5 V or 12 V input.

IC Role / Device Role / Timing Role: High-side power switch controlled by PWM signal; leverages fast 13 ns turn-on delay and 50 ns fall time for <500 kHz operation.

Use Value: 23 nC total gate charge reduces gate driver losses and allows use of low-cost discrete gate drivers instead of integrated controllers.

Power Management in Battery-Driven Portables Hard Disk Drive Power Sequencing

Use Scenario: Load switching for display backlight, camera flash, or RF modules in Bluetooth earbuds and smartwatches with tight thermal budgets.

IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) power switch activated by baseband processor GPIO; operates in linear or saturated region depending on gate drive.

Use Value: 0.65 V gate threshold ensures robust turn-on even as Li-ion battery discharges to 2.8 V, avoiding brown-out shutdown during peak current events.

Use Scenario: Controlled 5 V/12 V power enable for 2.5-inch HDDs in NAS enclosures, requiring staggered startup to limit inrush current.

IC Role / Device Role / Timing Role: Soft-start switch implementing controlled ramp-up via RC-gated gate drive; exploits low RDS(on) and high pulse current rating (36 A peak).

Use Value: 36 A peak drain current rating safely handles HDD spin-up surges without derating, eliminating need for larger SO-8 alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2016LFG-7 RDS(on) = 13.5 mΩ (typ) at VGS = 4.5 V; same DFN2020MD-6 package; lower ESD rating (1.5 kV HBM) Higher conduction loss increases thermal load in continuous 8 A loads; less suitable for sealed battery packs Select when cost sensitivity outweighs thermal margin requirements and ESD environment is controlled
SI2302DS-T1-BE3 RDS(on) = 55 mΩ (typ) at VGS = 4.5 V; SOT-23 package; no exposed thermal pad Significantly higher power dissipation requires larger copper area; unsuitable for >3 A continuous loads Choose only for low-current (<1.5 A), low-cost applications where board space is not constrained

Compared with DMN2016LFG-7 and SI2302DS-T1-BE3, PMPB10XNE delivers superior thermal performance and lower conduction loss in compact portable designs, making it the preferred choice for battery-powered systems demanding both space efficiency and thermal headroom.

Availability

PMPB10XNE is available at Aetrix Electronics and suitable for charging switches in portable devices, DC-DC converter high-side switches, and power management in battery-driven portables requiring stable component supply and long-term production continuity.

Supply support for PMPB10XNE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-grade and industrial MOSFETs, ESD protection, and logic solutions.

PMPB10XNE belongs to Nexperia's TrenchMOS portfolio, engineered specifically for space-constrained, thermally sensitive portable power applications where low RDS(on), small footprint, and robust ESD immunity are critical.

FAQ

What is the maximum continuous drain current for PMPB10XNE at 100 °C ambient temperature?

The maximum continuous drain current for PMPB10XNE is 5.7 A at Tamb = 100 °C, as specified in Table 5 (Limiting values). This value accounts for thermal derating due to reduced heat dissipation at elevated ambient temperatures and assumes standard FR4 PCB mounting with 6 cm² drain pad area.

Can PMPB10XNE be driven directly by a 1.8 V microcontroller GPIO without a level shifter?

Yes - PMPB10XNE has a typical gate threshold voltage of 0.65 V and guaranteed turn-on at VGS ≥ 1.8 V, enabling direct drive from 1.8 V logic. At VGS = 1.8 V, RDS(on) is 16–25 mΩ (Table 7), sufficient for moderate-current switching in portable applications.

What is the thermal resistance from junction to solder point (Rth(j-sp)) and why does it matter?

Rth(j-sp) is 5–10 K/W (Table 6), measured from junction to the solder joint on the PCB's drain pad. This low value enables rapid heat transfer from the die to the PCB copper, allowing designers to meet thermal targets using only standard FR4 with localized 6 cm² drain copper - no heatsink or thermal vias required in many cases.

Is PMPB10XNE qualified for automotive applications?

No - PMPB10XNE is not automotive-qualified. The datasheet explicitly states "Non-automotive qualified products" in Section 12.3, and it lacks AEC-Q101 qualification, extended temperature testing, or automotive-specific reliability data. It is intended for industrial and consumer portable electronics only.

PMPB10XNE,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
14mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id:
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
2175 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1.7W (Ta), 12.5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DFN2020MD-6

PMPB10XNE,115 FAQ

1.How can I place an order for PMPB10XNE,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PMPB10XNE,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMPB10XNE,115 reliable?

The price and inventory of PMPB10XNE,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB10XNE,115 is usually 5 days.

3.What payment methods are accepted for PMPB10XNE,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB10XNE,115 transactions.

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PMPB10XNE,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMPB10XNE,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMPB10XNE,115?

For technical support, including PMPB10XNE,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB10XNE,115 requirements.

6.How does Aetrix verify that PMPB10XNE,115 is sourced from the original manufacturer or authorized distributors?

All PMPB10XNE,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB10XNE,115 meets industry standards.

7.What is the process for return or replacement of PMPB10XNE,115?

All PMPB10XNE,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMPB10XNE,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMPB10XNE,115 part is unused and in its original packaging.

Return procedure for PMPB10XNE,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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