Nexperia USA Inc. PMPB10XNEAX
- Part No.:
- PMPB10XNEAX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
PMPB10XNEAX.pdf
- Description:
- MOSFET N-CH 20V 9A DFN2020MD-6
- Quantity:
- Payment:

- Shipping:

Inventory:3,930
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PMPB10XNEAX from Nexperia is a 20 V, N-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) package, designed for low-side switching in automotive and industrial power control circuits. It delivers 9 A continuous drain current at VGS = 4.5 V, exhibits 10 mΩ typical RDS(on) at 25 °C, and is AEC-Q101 qualified for under-hood applications such as relay drivers and high-speed line drivers.
For engineers reviewing the PMPB10XNEAX datasheet, PMPB10XNEAX pinout, PMPB10XNEAX application, or PMPB10XNEAX equivalent, this device is selected for its low threshold voltage (0.65 V typ), side-wettable flanks enabling optical solder inspection, and robust 1 kV HBM ESD rating - critical for compact, thermally constrained PCB layouts in automotive body electronics.
Technical Context
This MOSFET employs Trench technology to achieve low RDS(on) and fast switching performance: td(on) = 13 ns, tr = 35 ns, QG(tot) = 23 nC, and Ciss = 2175 pF at VDS = 10 V. Its gate threshold voltage (VGS(th)) ranges from 0.4 V to 0.9 V, enabling reliable turn-on with 1.8 V–2.5 V logic-level drive.
The device integrates a built-in source-drain diode with VSD = 0.6 V (typ) at IS = 2 A and trr = 13 ns, supporting synchronous rectification and flyback energy recovery in switching circuits. Thermal resistance Rth(j-sp) is 5–10 K/W when mounted on a 6 cm² drain pad, enabling >12 W power dissipation at Tsp = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum blocking voltage for 12 V automotive rail and 5–15 V industrial bus applications. |
| RDS(on) | 10 mΩ (typ) at VGS = 4.5 V, ID = 9 A, Tj = 25 °C - Enables <100 mW conduction loss at 3 A load current. |
| VGS(th) | 0.65 V (typ) - Ensures full enhancement with 1.8 V GPIO or low-voltage microcontroller outputs. |
| QG(tot) | 23 nC - Supports efficient 1 MHz switching with ≤6 Ω gate driver impedance. |
| ID (cont) | 9 A at Tamb = 25 °C - Sustains 5.7 A at 100 °C ambient, suitable for sustained load switching without forced cooling. |
| EAS | 21 mJ - Withstands unclamped inductive energy during turn-off, improving reliability in relay and solenoid drive. |
| HBM ESD | >1 kV (Class H1C) - Eliminates need for external ESD protection in board-level assembly. |
Pinout & Package
DFN2020MD-6 (SOT1220) is a 2.0 × 2.0 mm, 0.65 mm profile, thermally enhanced leadless package with side-wettable flanks for automated optical solder inspection. The exposed drain paddle occupies pins 1, 2, 5, 6, and 7; source connects via pins 4 and 8; gate is on pin 3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6, 7 | Drain (D) | Common high-current output node; electrically and thermally tied to exposed copper paddle for low-inductance, high-power routing. |
| 3 | Gate (G) | Control input requiring ≤23 nC charge; sensitive to ESD but protected to >1 kV HBM. |
| 4, 8 | Source (S) | Return path for load current; dual terminals reduce bondwire inductance and improve current sharing in high-dI/dt operation. |
Key Features
| Feature | Design Value |
|---|---|
| Side-wettable flanks | Enables automated optical inspection (AOI) of solder joints without X-ray, reducing manufacturing defect escape rate. |
| AEC-Q101 qualification | Validated for automotive temperature range (−55 °C to 150 °C) and mechanical stress, supporting under-hood deployment. |
| Trench MOSFET architecture | Delivers 10 mΩ RDS(on) in 2 mm² footprint - 30% lower on-resistance than planar equivalents at same voltage rating. |
| Low VGS(th) | 0.65 V typical enables direct drive from 1.8 V/2.5 V logic without level-shifting, simplifying gate driver design. |
| Ultra-thin profile (0.65 mm) | Reduces board stack height in space-constrained modules such as ECU power stages and LED driver PCBs. |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
|
Use Scenario: Driving 12 V automotive relays (e.g., HVAC blower, headlight, fuel pump) in body control modules. IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current up to 9 A peak, with <54 ns turn-off delay ensuring precise timing in PWM-controlled loads. Use Value: 10 mΩ RDS(on) limits coil drive loss to <810 mW at 9 A, eliminating heatsink requirements in sealed enclosures. |
Use Scenario: Transmitting high-frequency digital signals (e.g., LIN bus, CAN FD stubs, sensor excitation) across noisy vehicle harnesses. IC Role / Device Role / Timing Role: Active termination or signal amplification stage with 35 ns rise time and 50 ns fall time, preserving edge integrity up to 10 Mbps. Use Value: Low Ciss (2175 pF) and QGD (4.5 nC) minimize signal distortion and cross-talk in multi-node bus topologies. |
| Low-Side Load Switch | Switching Power Circuit |
|
Use Scenario: Enabling/disabling 5–12 V subsystems (e.g., infotainment USB ports, camera modules) with inrush current limiting. IC Role / Device Role / Timing Role: Controlled power path switch with 0.65 V VGS(th), allowing soft-start via RC-gated turn-on and reverse polarity protection via integrated body diode. Use Value: 1 kV HBM ESD rating prevents latch-up during hot-plug events, eliminating need for external TVS diodes. |
Use Scenario: Synchronous rectifier or main switch in buck converters, LED drivers, and DC-DC modules for ADAS sensors and lighting. IC Role / Device Role / Timing Role: High-efficiency power switch operating at 500 kHz–1 MHz with 21 mJ avalanche energy rating for inductive kick handling. Use Value: 5–10 K/W junction-to-solder-point thermal resistance enables >10 W dissipation on standard FR4, avoiding thermal vias or metal-core substrates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LKQ-7 | RDS(on) = 12.5 mΩ (typ) at VGS = 4.5 V; QG = 20 nC; same DFN2020MD-6 package. | Higher RDS(on) increases conduction loss by ~25% at 9 A; identical thermal and footprint compatibility. | Select when marginally higher on-resistance is acceptable and second-source assurance is required. |
| PSMN1R0-25YLH | RDS(on) = 1.0 mΩ (typ) at VGS = 10 V; requires 10 V gate drive; SO8 package (larger, higher inductance). | Lower RDS(on) only achievable at 10 V drive - incompatible with 3.3 V logic; SO8 footprint prevents drop-in replacement. | Choose only if system uses 10 V gate bias and board layout allows SO8 rework; not a functional substitute for logic-level operation. |
Compared with DMN2004LKQ-7, PMPB10XNEAX offers lower RDS(on) and better logic-level drive; versus PSMN1R0-25YLH, it trades ultra-low on-resistance for 1.8 V compatibility and 2 mm² footprint - making it optimal for space- and voltage-constrained automotive modules.
Availability
PMPB10XNEAX is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O modules, and consumer appliance motor control requiring stable component supply, AEC-Q101 compliance, and high-volume DFN2020MD-6 sourcing.
Supply support for PMPB10XNEAX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance discrete, logic, and MOSFET solutions for automotive, industrial, and mobile markets.
PMPB10XNEAX belongs to Nexperia's Automotive Logic-Level MOSFET product line, engineered specifically for low-voltage, high-reliability switching in engine control units, lighting systems, and power distribution modules where space, thermal headroom, and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum continuous drain current for PMPB10XNEAX at 100 °C ambient temperature?
The maximum continuous drain current is 5.7 A at Tamb = 100 °C with device mounted on an FR4 PCB using a 6 cm² drain pad. This derating reflects thermal resistance Rth(j-a) = 67–74 K/W and ensures junction temperature remains below 150 °C under steady-state conditions.
Does PMPB10XNEAX support gate drive from a 1.8 V microcontroller GPIO?
Yes - its typical gate threshold voltage is 0.65 V, with a maximum of 0.9 V, enabling full enhancement at VGS = 1.8 V. At that voltage, RDS(on) is 12–18 mΩ (typ), sufficient for ≤5 A loads with minimal conduction loss.
How does the side-wettable flank feature benefit manufacturing yield?
The side-wettable flanks allow automated optical inspection (AOI) of solder fillets on all six terminals, including the exposed drain paddle. This eliminates reliance on X-ray for void detection and reduces false-call rates in high-volume SMT lines, improving first-pass yield by up to 12% in automotive PCB assembly.
Is PMPB10XNEAX suitable for avalanche energy handling in inductive load switching?
Yes - it is rated for 21 mJ non-repetitive drain-source avalanche energy (EAS) at Tj(init) = 25 °C and ID = 2 A. This supports safe turn-off of relay coils and solenoids without external snubbers, provided single-pulse conditions and thermal limits are observed.
PMPB10XNEAX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 9A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2175 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.7W (Ta), 12.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN2020MD-6
PMPB10XNEAX FAQ
1.How can I place an order for PMPB10XNEAX through Aetrix?
Please submit a Request for Quotation (RFQ) for PMPB10XNEAX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMPB10XNEAX reliable?
The price and inventory of PMPB10XNEAX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB10XNEAX is usually 5 days.
3.What payment methods are accepted for PMPB10XNEAX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB10XNEAX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMPB10XNEAX?
PMPB10XNEAX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMPB10XNEAX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMPB10XNEAX?
For technical support, including PMPB10XNEAX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB10XNEAX requirements.
6.How does Aetrix verify that PMPB10XNEAX is sourced from the original manufacturer or authorized distributors?
All PMPB10XNEAX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB10XNEAX meets industry standards.
7.What is the process for return or replacement of PMPB10XNEAX?
All PMPB10XNEAX units undergo pre-shipment inspection (PSI). If there is an issue with PMPB10XNEAX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMPB10XNEAX part is unused and in its original packaging.
Return procedure for PMPB10XNEAX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PMPB10XNEAX Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

