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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMPB11ENX

Name: PMPB11ENX
Brand: Nexperia USA Inc.
SKU: PMPB11ENX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMPB11ENX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: PMPB11ENX.pdf

Description:: PMPB11EN/SOT1220/SOT1220

Quantity:: RFQ Add To RFQ list

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Inventory:5,345

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Product details

Overview

PMPB11ENX from Nexperia is a 30 V, N-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) leadless ultra-thin SMD package, optimized for high-efficiency power switching in space-constrained portable electronics. It delivers R_DS(on) = 12 mΩ @ V_GS = 10 V, I_D = 9 A, T_j = 25 °C; supports peak drain current of 34 A; and features an exposed drain pad for thermal conduction in battery charging switches and DC-DC converters.

For engineers reviewing the PMPB11ENX datasheet, PMPB11ENX pinout, PMPB11ENX application, or PMPB11ENX equivalent, key selection criteria include its 12 mΩ on-resistance at 10 V gate drive, 2×2×0.65 mm footprint, 6-terminal drain-gate-source configuration, and thermal resistance R_th(j-sp) = 5–10 K/W - critical for thermally dense portable power management designs.

Technical Context

This N-channel MOSFET employs Trench technology to achieve low R_DS(on) and fast switching (t_d(on) = 9 ns, t_r = 10 ns, t_d(off) = 17 ns), enabling high-frequency operation in synchronous buck converters and load switches. Its gate threshold voltage V_GS(th) = 1.0–2.0 V ensures reliable turn-on with 3.3 V and 5 V logic-level control.

The device integrates an internal source-drain diode (V_SD = 0.8–1.2 V @ I_S = 2.2 A), supports continuous drain current up to 9 A at T_amb = 25 °C (derated to 5.7 A at 100 °C), and operates across –55 °C to +150 °C junction temperature range - suitable for ambient-variable portable systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - defines safe blocking voltage in 12 V/24 V input power rails and USB PD-compatible chargers.
R_DS(on)	12 mΩ typical @ V_GS = 10 V, I_D = 9 A, T_j = 25 °C - enables <150 mW conduction loss at 9 A, reducing thermal load in compact PCBs.
Q_G(tot)	13.7–20.6 nC - determines gate drive power and switching speed; compatible with low-power microcontroller GPIOs via small external driver.
I_D (continuous)	9 A @ T_amb = 25 °C on FR4 PCB with 6 cm² drain pad - sets usable current capacity in handheld device power stages without forced cooling.
R_th(j-sp)	5–10 K/W - quantifies thermal path efficiency from junction to solder point, enabling accurate board-level thermal modeling for reliability validation.
V_GS(th)	1.0–2.0 V @ I_D = 250 µA - ensures robust turn-on with standard logic-level signals and low-voltage battery monitoring circuits.

Pinout & Package

Package: DFN2020MD-6 (SOT1220), 2.0 × 2.0 × 0.65 mm, leadless, thermally enhanced with exposed drain pad.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6, 7	Drain (D)	Five parallel drain terminals connected to exposed copper pad - maximizes current handling and thermal dissipation to PCB ground plane.
3	Gate (G)	Single gate input with 1.6 Ω internal gate resistance - limits dV/dt-induced ringing and eases EMI filtering design.
4, 8	Source (S)	Two source terminals providing low-inductance return path; enables Kelvin sensing or split-current routing in high-accuracy current monitoring.

Key Features

Feature	Design Value
Trench MOSFET architecture	Enables 12 mΩ R_DS(on) in 2×2 mm footprint - reduces conduction loss by >30% vs planar equivalents at same die size.
Exposed drain pad	Reduces R_th(j-a) to 33–36 K/W on 6 cm² FR4 copper - improves thermal margin by ~40% over standard DFN packages without thermal pad.
Tin-plated side pads	Supports automated optical inspection (AOI) of solder joints - eliminates X-ray requirement for production line quality assurance.
Ultra-thin profile (0.65 mm)	Enables stacking under batteries or displays in slim mobile devices - meets mechanical envelope constraints in modern wearables and tablets.

Applications

Charging Switch

DC-DC Converter

Use Scenario: Bidirectional USB-C power path control in smartphones and tablets, managing charge/discharge between battery and port.

IC Role / Device Role / Timing Role: High-side N-channel load switch controlling power flow direction and isolation during fast-charge handshaking.

Use Value: 12 mΩ R_DS(on) minimizes voltage drop and heat generation during 3 A–5 A charging currents, preserving battery efficiency and thermal headroom.

Use Scenario: Synchronous rectifier in 3.3 V/5 V buck converter for SoC core rail in portable computing devices.

IC Role / Device Role / Timing Role: Low-side switching element operating at 1–2 MHz with fast turn-off (t_f = 9 ns) to reduce dead-time losses.

Use Value: Q_GD = 1.71 nC and C_oss = 155 pF enable efficient zero-voltage switching (ZVS) behavior, improving light-load efficiency by ~5%.

Battery Power Management

HDD/SSD Power Control

Use Scenario: System power gating for Bluetooth/Wi-Fi modules in always-on IoT sensors powered by coin cells or Li-ion batteries.

IC Role / Device Role / Timing Role: Low-quiescent-current load switch enabling <1 µA off-state leakage (I_DSS = 1 µA @ 30 V) and rapid wake-up response.

Use Value: V_GS(th) = 1.5 V typical ensures full enhancement at 1.8 V supply, supporting direct interface with ultra-low-voltage MCUs without level shifters.

Use Scenario: 5 V/12 V power sequencing and fault protection for 2.5-inch HDDs and M.2 SSDs in ultrabooks and docking stations.

IC Role / Device Role / Timing Role: Overcurrent-protected high-side switch with integrated thermal shutdown behavior (T_j(max) = 150 °C).

Use Value: Peak drain current rating of 34 A supports HDD spin-up surge without external current limiting, simplifying BOM and layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LKQ-7	R_DS(on) = 19 mΩ @ 4.5 V, smaller 1.6×1.6 mm DFN - higher on-resistance, lower thermal mass.	Lower power density; suited for sub-3 A loads where board area is more constrained than thermal budget.	Select when gate drive is limited to 4.5 V and peak current ≤ 4 A; avoid if 9 A continuous rating or 12 mΩ target is required.
PSMN1R0-30YL	R_DS(on) = 1.0 mΩ @ 10 V, TO-220 package - 12× lower R_DS(on), but 10× larger footprint and no SMD compatibility.	High-power industrial supplies; incompatible with portable PCB assembly due to through-hole mounting and height.	Choose only for non-portable, high-current (>20 A), non-space-constrained applications requiring minimal conduction loss.

Compared with DMN2004LKQ-7 and PSMN1R0-30YL, PMPB11ENX uniquely balances ultra-compact 2×2 mm SMD form factor, 12 mΩ on-resistance, and 9 A continuous rating - making it optimal for thermally dense, battery-powered systems where both size and efficiency are co-constrained.

Availability

PMPB11ENX is available at Aetrix Electronics and suitable for portable device charging switches, DC-DC converter synchronous rectifiers, and battery-powered power management systems requiring stable component supply and long-term manufacturability.

Supply support for PMPB11ENX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic components, with leadership in automotive-qualified and industrial-grade MOSFETs, diodes, and ESD protection devices.

The PMPB11ENX belongs to Nexperia's TrenchMOS® medium-power portfolio, engineered specifically for space- and thermally constrained portable electronics - emphasizing low R_DS(on), fast switching, and robust SMD packaging for consumer and computing applications.

FAQ

What is the maximum continuous drain current for PMPB11ENX at 100 °C ambient temperature?

The maximum continuous drain current is 5.7 A at T_amb = 100 °C when mounted on an FR4 PCB with a 6 cm² drain pad. This derating reflects thermal limitations of the DFN2020MD-6 package under sustained high-temperature operation, not electrical failure - junction temperature remains within 150 °C limit.

Does PMPB11ENX support 3.3 V logic-level gate drive?

Yes - with V_GS(th) = 1.0–2.0 V and R_DS(on) = 14–16.5 mΩ @ V_GS = 4.5 V, I_D = 3.7 A, the device fully enhances at 3.3 V gate drive. However, conduction loss increases ~20% versus 10 V drive, so system efficiency trade-offs must be validated at actual load conditions.

How is thermal performance affected by PCB copper area for the drain pad?

Thermal resistance R_th(j-a) improves from 235–270 K/W (standard footprint) to 33–36 K/W with a 6 cm² drain pad - a 6.5× reduction. This directly enables 2.7× higher continuous current (9 A vs ~3.3 A) at the same ambient temperature, confirming strict adherence to the specified 6 cm² copper area for rated performance.

Is PMPB11ENX qualified for automotive applications?

No - the datasheet explicitly states this is a non-automotive qualified product. It lacks AEC-Q101 stress testing, automotive-grade process controls, and extended temperature validation beyond –55 °C to +150 °C junction range. Use in automotive systems requires formal qualification and is not supported by Nexperia's warranty or reliability data.

PMPB11ENX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 14.5mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 840 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.7W (Ta), 12.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DFN2020MD-6

PMPB11ENX FAQ

1.How can I place an order for PMPB11ENX through Aetrix?

Please submit a Request for Quotation (RFQ) for PMPB11ENX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMPB11ENX reliable?

The price and inventory of PMPB11ENX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB11ENX is usually 5 days.

3.What payment methods are accepted for PMPB11ENX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB11ENX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMPB11ENX?

PMPB11ENX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMPB11ENX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMPB11ENX?

For technical support, including PMPB11ENX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB11ENX requirements.

6.How does Aetrix verify that PMPB11ENX is sourced from the original manufacturer or authorized distributors?

All PMPB11ENX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB11ENX meets industry standards.

7.What is the process for return or replacement of PMPB11ENX?

All PMPB11ENX units undergo pre-shipment inspection (PSI). If there is an issue with PMPB11ENX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMPB11ENX part is unused and in its original packaging.

Return procedure for PMPB11ENX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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