Nexperia USA Inc. PMPB11R2VPX

Overview

PMPB11R2VPX from Nexperia is a 12 V, P-channel enhancement-mode Trench MOSFET in a DFN2020M-6 (SOT1220-2) leadless ultra-thin SMD package, designed for high-efficiency power switching in space-constrained portable electronics. It delivers R_DS(on) = 11.2 mΩ at V_GS = −4.5 V and I_D = −9.7 A (T_j = 25 °C), supports −14 A continuous drain current under pulsed conditions, and features an exposed drain pad for enhanced thermal conduction in battery-powered DC-DC converters and charging switches.

For engineers reviewing the PMPB11R2VPX datasheet, PMPB11R2VPX pinout, PMPB11R2VPX application, or PMPB11R2VPX equivalent, key selection criteria include low threshold voltage (V_GS(th) = −0.65 V typ), junction-to-solder-point thermal resistance (R_th(j-sp) = 6–10 K/W), and gate charge profile (Q_G(tot) = 26–39 nC) critical for fast-switching, low-loss power management designs.

Technical Context

This P-channel MOSFET uses Trench technology to achieve low on-resistance and stable sub-threshold behavior across temperature. Its gate-source threshold voltage (−0.4 to −0.9 V) enables direct interfacing with 1.8 V and 2.5 V logic controllers without level-shifting, while the integrated source-drain diode (V_SD = −0.7 to −1.2 V at I_S = −1.8 A) supports synchronous rectification and reverse-current blocking in buck converters.

The device operates within −55 °C to 150 °C junction temperature range and exhibits normalized R_DS(on) drift of ≤1.5× from 25 °C to 150 °C. Its safe operating area (SOA) is defined up to 40 A peak drain current (t_p ≤ 10 µs) and −12 V V_DS, with thermal derating governed by FR4 PCB mounting pad size (6 cm²) and ambient temperature.

Key Specifications

Pinout & Package

DFN2020M-6 (SOT1220-2) is a 2 mm × 2 mm × 0.65 mm leadless thermally enhanced plastic package with an exposed drain pad on the bottom side for optimal heat dissipation. The package has six terminals arranged in a single-row configuration with pins 1–2–3–6–7–8 assigned to drain–drain–gate–drain–drain–source, and pin 4–5 as source–source (per simplified outline).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Compared with DMG1012T and SI2301DDS, PMPB11R2VPX provides superior thermal density (6–10 K/W R_th(j-sp) vs ≥30 K/W), lower gate charge, and tighter V_GS(th) distribution-making it the preferred choice for compact, high-efficiency 3–10 A portable power switches where board area and thermal headroom are constrained.

Availability

PMPB11R2VPX is available at Aetrix Electronics and suitable for portable device charging switches, DC-DC converter high-side switches, and computing load management requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for PMPB11R2VPX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-grade qualification.

PMPB11R2VPX belongs to Nexperia's TrenchMOS P-channel portfolio, engineered specifically for space-constrained, thermally demanding power management in consumer portable electronics and computing platforms.

FAQ

What is the maximum continuous drain current for PMPB11R2VPX at 100 °C ambient temperature?

The maximum continuous drain current is −6.1 A at T_amb = 100 °C, measured with the device mounted on an FR4 PCB using a 6 cm² drain pad. This value reflects thermal derating due to reduced heat dissipation at elevated ambient temperatures and must be validated against actual board layout and airflow conditions.

Does PMPB11R2VPX require a gate resistor for stable switching in a 1 MHz DC-DC converter?

Yes-a series gate resistor (typically 2.2–10 Ω) is recommended to dampen ringing caused by gate loop inductance and minimize EMI. With Q_G(tot) = 26–39 nC and low C_iss = 2230 pF, excessive drive strength without damping can cause overshoot and shoot-through risk in synchronous buck topologies.

Can PMPB11R2VPX be used in automotive infotainment power rails?

No-PMPB11R2VPX is not AEC-Q101 qualified and lacks automotive-specific reliability testing, temperature cycling validation, or guaranteed operation beyond 150 °C junction temperature. Nexperia explicitly states non-automotive qualification in its legal disclaimers; use only in consumer or industrial portable applications.

How does the exposed drain pad affect PCB layout requirements for thermal performance?

The exposed drain pad must be connected to a minimum 6 cm² copper pour on the bottom layer, single-sided, tin-plated, with thermal vias to inner ground planes if multilayer. Reducing pad area below 6 cm² increases R_th(j-a) to >223 K/W, degrading power handling by >50% and risking thermal shutdown under sustained load.