My Inquiry
My Account
Nexperia USA Inc. PMPB12EPX
- Part No.:
- PMPB12EPX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
PMPB12EPX.pdf
- Description:
- MOSFET P-CH 30V 7.9A DFN2020MD-6
- Quantity:
- Payment:
- Shipping:
Inventory:9,171
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PMPB12EPX from Nexperia is a 30 V, P-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) package, optimized for high-efficiency power switching in space-constrained portable electronics. It delivers 15 mΩ RDS(on) at VGS = −10 V and ID = −7.9 A, supports logic-level gate drive down to −4.5 V, and features side-wettable flanks for automated optical solder inspection - deployed as a charging switch in USB-C PD power paths.
For engineers reviewing the PMPB12EPX datasheet, PMPB12EPX pinout, PMPB12EPX application, or PMPB12EPX equivalent, this device is selected for low-voltage, high-current load switching where thermal performance, compact footprint (2 × 2 × 0.65 mm), and reliable drain-source breakdown (−30 V) are critical in battery-powered DC-DC and power management circuits.
Technical Context
This MOSFET uses Trench technology to achieve low on-resistance and fast switching with minimal gate charge (QG(tot) = 26.6–39.9 nC). Its gate threshold voltage (VGS(th) = −1.0 to −2.0 V) ensures robust turn-on with standard logic-level controllers, while its exposed drain pad enables efficient heat transfer to PCB copper.
The device operates across −55 °C to +150 °C junction temperature, with normalized RDS(on) variation ≤1.5× over that range. Its safe operating area (SOA) supports peak drain currents up to −32 A (10 µs pulse) and continuous current up to −7.9 A at Tamb = 25 °C on a 6 cm² drain pad - confirming suitability for transient-heavy portable power rails.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −30 V maximum drain-source voltage - withstands full battery discharge transients in 3.7 V Li-ion systems without avalanche stress. |
| RDS(on) | 15 mΩ typical at VGS = −10 V, ID = −7.9 A, Tj = 25 °C - enables <100 mW conduction loss at 8 A, reducing thermal load in thin-profile PCBs. |
| QG(tot) | 26.6–39.9 nC total gate charge - allows fast switching with low driver power, supporting >1 MHz operation in synchronous buck converters. |
| VGS(th) | −1.0 to −2.0 V threshold voltage - ensures reliable turn-on with 3.3 V GPIO or dedicated PMIC gate drivers without level-shifting. |
| Tj(max) | +150 °C maximum junction temperature - supports sustained operation in thermally dense mobile SoC power domains. |
| Rth(j-sp) | 5–10 K/W junction-to-solder-point thermal resistance - enables direct thermal coupling to PCB ground plane for passive cooling. |
| ID(cont) | −7.9 A continuous drain current at Tamb = 25 °C with 6 cm² drain pad - matches typical 5–10 A load requirements of USB-C sink-side power switches. |
Pinout & Package
DFN2020MD-6 (SOT1220) is a leadless, ultra-thin surface-mount package measuring 2.0 × 2.0 × 0.65 mm with side-wettable flanks for AOI-compatible reflow. The exposed drain pad occupies the center-bottom area and serves as primary thermal and electrical path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6, 7 | Drain (D) | Five parallel drain terminals connected to internal die drain metallization and exposed bottom pad - provide low-inductance, high-current return path and thermal conduction to PCB. |
| 3 | Gate (G) | Single gate input terminal - requires <40 nC total charge for full enhancement; compatible with 3.3 V logic drive without external level shift. |
| 4, 8 | Source (S) | Two source terminals tied to internal source metallization - form low-impedance return path for load current and reference node for gate control. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = −4.5 V, eliminating need for gate driver ICs in 3.3 V microcontroller-based power sequencing. |
| Side-wettable flanks | Vertical sidewall plating enables automated optical inspection (AOI) of solder joint integrity - critical for high-yield SMT assembly in portable device manufacturing. |
| Exposed drain pad | Thermal resistance to solder point as low as 5 K/W - allows >13 W power dissipation when mounted on 6 cm² copper, enabling compact thermal design. |
| Trench MOSFET architecture | Reduces specific on-resistance by ~30% vs planar P-channel equivalents - improves efficiency in bidirectional load switches and reverse-polarity protection circuits. |
| Ultra-thin profile | 0.65 mm max height - fits under mechanical shields and within tight Z-height constraints of smartphones, tablets, and wearables. |
Applications
| USB-C Power Delivery Charging Switch | Portable Device DC-DC Converter High-Side Switch |
|---|---|
Use Scenario: Bidirectional power path control between USB-C port and system battery during charging and discharging cycles. IC Role / Device Role / Timing Role: P-channel high-side load switch managing 5–20 V input rails with reverse-current blocking and inrush control. Use Value: 15 mΩ RDS(on) minimizes voltage drop and heat generation during 3 A–5 A PD 3.0 charging, extending battery runtime and reducing thermal throttling. |
Use Scenario: High-efficiency synchronous rectification in buck converter output stage for SoC core voltage regulation. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction losses in 1–3 MHz switching converters. Use Value: QG(tot) ≤ 40 nC and fast fall time (83 ns) enable clean turn-off with minimal shoot-through risk, improving conversion efficiency by 2–4% at 2 A loads. |
| Battery-Powered Computing Power Management | Reverse Polarity Protection Circuit |
Use Scenario: Dynamic power rail enable/disable for SSDs, displays, or peripheral modules in ultrabooks and 2-in-1 laptops. IC Role / Device Role / Timing Role: Load switch isolating 3.3 V or 5 V subsystems during sleep states to eliminate standby leakage. Use Value: −1 µA IDSS leakage at −30 V VDS ensures <1 µA off-state current per rail - critical for multi-week standby battery life in always-on devices. |
Use Scenario: Input protection for 3.7 V Li-ion battery chargers and fuel gauges against accidental reverse battery insertion. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode with source tied to battery positive, drain to system input. Use Value: VGS(th) ≤ −2.0 V guarantees immediate cutoff at <2.5 V reverse voltage, preventing damage to downstream PMICs and analog front-ends. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3020LSD-13 | RDS(on) = 20 mΩ @ −10 V; SO-8 package (4.9 × 6.0 mm); no side-wettable flanks | Larger footprint and higher thermal resistance (Rth(j-a) ≈ 62 K/W) - unsuitable for ultra-thin portable designs | Select only if board space permits larger package and AOI is not required. |
| SI2301DDS-T1-BE3 | RDS(on) = 115 mΩ @ −4.5 V; SOT-23 package; higher threshold (−1.0 to −3.0 V) with wider spread | Higher conduction loss (>900 mW at 3 A) limits use to sub-1 A loads; less predictable turn-on timing | Prefer for cost-sensitive, low-current applications where size and thermal performance are secondary. |
Compared with DMN3020LSD-13 and SI2301DDS-T1-BE3, PMPB12EPX offers superior thermal density (0.65 mm height, 5 K/W Rth(j-sp)) and tighter VGS(th) distribution, making it the only viable option for high-current, space-constrained USB-C PD and computing power switches requiring AOI validation.
Availability
PMPB12EPX is available at Aetrix Electronics and suitable for USB-C power delivery charging switches, portable DC-DC converter high-side switches, and battery-powered computing power management requiring stable component supply and consistent DFN2020MD-6 packaging.
Supply support for PMPB12EPX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.
PMPB12EPX belongs to Nexperia's TrenchMOS P-channel portfolio, engineered specifically for high-efficiency, low-footprint power switching in consumer portable electronics - emphasizing thermal performance, logic-level compatibility, and manufacturability in high-density SMT lines.
FAQ
What is the maximum continuous drain current for PMPB12EPX at 100 °C ambient temperature?
The maximum continuous drain current is −5 A at Tamb = 100 °C, as specified in Table 5 (Limiting values) under "ID drain current" with conditions VGS = −10 V and Tamb = 100 °C. This derating reflects thermal limits when mounted on an FR4 PCB with single-sided 6 cm² drain copper.
Does PMPB12EPX support gate drive from a 1.8 V microcontroller GPIO?
No - the gate threshold voltage range is −1.0 V to −2.0 V, and full enhancement requires VGS ≤ −4.5 V for RDS(on) ≤ 23.8 mΩ. A 1.8 V GPIO cannot produce sufficient negative gate bias; a level-shifter or dedicated gate driver is required for reliable operation.
How does the side-wettable flank feature impact PCB assembly yield?
Side-wettable flanks provide vertical solder meniscus visibility during automated optical inspection (AOI), enabling 100% solder joint quality verification without X-ray. This reduces field failures from insufficient solder on drain/source terminals and improves first-pass yield in high-volume portable device manufacturing.
Can PMPB12EPX be used in avalanche-rated applications?
No - the datasheet does not specify avalanche energy rating (EAS) or unclamped inductive switching capability. It is rated for repetitive and single-pulse SOA operation only. For avalanche-prone circuits (e.g., relay driving), a device with documented EAS must be selected instead.
PMPB12EPX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 17.3mOhm @ 7.9A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 39.9 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 227 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.7W (Ta), 13W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN2020MD-6
PMPB12EPX FAQ
1.How can I place an order for PMPB12EPX through Aetrix?
Please submit a Request for Quotation (RFQ) for PMPB12EPX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMPB12EPX reliable?
The price and inventory of PMPB12EPX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB12EPX is usually 5 days.
3.What payment methods are accepted for PMPB12EPX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB12EPX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMPB12EPX?
PMPB12EPX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMPB12EPX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMPB12EPX?
For technical support, including PMPB12EPX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB12EPX requirements.
6.How does Aetrix verify that PMPB12EPX is sourced from the original manufacturer or authorized distributors?
All PMPB12EPX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB12EPX meets industry standards.
7.What is the process for return or replacement of PMPB12EPX?
All PMPB12EPX units undergo pre-shipment inspection (PSI). If there is an issue with PMPB12EPX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMPB12EPX part is unused and in its original packaging.
Return procedure for PMPB12EPX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PMPB12EPX Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
