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Nexperia USA Inc. PMPB12R5UPEX

Part No.:
PMPB12R5UPEX
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
6-UDFN Exposed Pad
Datasheet:
AetrixPMPB12R5UPEX.pdf
Description:
PMPB12R5UPE/SOT1220-2/DFN2020M
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,355

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Product details

Overview

PMPB12R5UPEX from Nexperia is a P-channel enhancement-mode Trench MOSFET in a DFN2020M-6 (SOT1220-2) package, designed for high-efficiency power switching in space-constrained portable electronics. It delivers 13 A continuous drain current at VGS = −4.5 V, 11.8 mΩ typical RDS(on) at 25 °C, −20 V drain-source voltage rating, and features an exposed drain pad for thermal conduction in battery-powered charging switches and DC-DC converters.

For engineers reviewing the PMPB12R5UPEX datasheet, PMPB12R5UPEX pinout, PMPB12R5UPEX application, or PMPB12R5UPEX equivalent, key selection criteria include low-threshold gate drive compatibility with 1.8–2.5 V logic, ultra-thin 0.65 mm profile for stacked PCBs, ESD robustness (>2000 V HBM), and thermal performance on FR4 with 6 cm² drain pad.

Technical Context

This device operates as a high-side load switch in battery management systems, leveraging its negative threshold voltage (−0.6 V typ) to enable direct control from low-voltage microcontrollers without level-shifting. Its trench architecture minimizes conduction losses while maintaining fast switching: 5 ns turn-on delay, 44 ns fall time, and 26 nC total gate charge support efficient PWM operation in portable DC-DC stages.

The DFN2020M-6 package integrates five drain terminals and one source terminal on the bottom side, with gate and source accessible via top-side pads - enabling compact layout and low-inductance source return paths. Thermal resistance from junction to solder point is 6–10 K/W, confirming suitability for thermally demanding 2×2 mm footprint applications where heatsinking area is limited.

Key Specifications

Parameter Value and Actual Design Meaning
VDS −20 V: Maximum blocking voltage for 12 V battery rail protection and reverse-polarity safeguarding
RDS(on) 11.8 mΩ @ VGS = −4.5 V, ID = −9.4 A, Tj = 25 °C: Enables <100 mW conduction loss at 9.4 A, critical for thermal budget in sealed enclosures
ID (cont) −13 A @ VGS = −4.5 V, Tamb = 25 °C, t ≤ 5 s: Supports peak load currents in USB-C PD sink circuits and SSD power gating
VGS(th) −0.6 V typ @ ID = −250 µA: Allows reliable turn-on from 1.8 V GPIOs, eliminating need for external gate drivers in ultra-low-power wake-up paths
QG(tot) 26 nC typ: Reduces gate drive power and enables >1 MHz switching in synchronous buck controllers without excessive driver loss
Rth(j-sp) 6–10 K/W: Confirms effective heat transfer to PCB copper through exposed drain pad, essential for sustained 3.8 W dissipation on standard FR4
ESD Rating >2000 V HBM (Class H2): Ensures robustness against handling and board-level ESD events in consumer assembly environments

Pinout & Package

DFN2020M-6 (SOT1220-2) is a 2.0 × 2.0 × 0.65 mm leadless plastic package with an exposed drain pad on the bottom side for thermal and electrical connection. Six terminals are arranged in a single-row configuration with pins 1–6 mapped to drain, drain, gate, source, drain, and drain respectively.

Pin/Terminal Circuit Role Design Meaning
1 Drain Primary high-current path; electrically and thermally connected to exposed bottom pad
2 Drain Parallel drain connection to reduce package inductance and improve current sharing
3 Gate Control input; requires <2.5 V logic-compatible drive for full enhancement
4 Source Reference node for gate drive; tied to system ground or battery negative in high-side switch configurations
5 Drain Third parallel drain terminal; enhances thermal spreading across PCB copper area
6 Drain Fourth drain connection; completes low-impedance path to exposed pad for thermal conduction

Key Features

Feature Design Value
Ultra-thin profile 0.65 mm height enables stacking under displays or within slim battery compartments of wearables and tablets
Exposed drain pad Direct thermal interface to 6 cm² PCB copper reduces junction-to-ambient resistance to 29–33 K/W, enabling higher sustained current
Trench MOSFET process Enables 11.8 mΩ RDS(on) at −4.5 V while maintaining <1 µA leakage at −20 V, critical for standby power integrity
Low VGS(th) −0.6 V typical threshold ensures full enhancement from 1.8 V I/O rails, supporting direct MCU control in always-on subsystems
HBM ESD protection >2000 V rating eliminates need for external TVS diodes in handheld product front-end power stages

Applications

USB-C Power Delivery Sink Switch SSD Main Power Gate

Use Scenario: Controls 5–20 V input power to USB-C PD controller ICs and downstream buck converters in laptops and docks.

IC Role / Device Role / Timing Role: High-side load switch enabling hot-plug sequencing and overvoltage protection before system power-up.

Use Value: 11.8 mΩ RDS(on) limits voltage drop to <118 mV at 10 A, preserving PD negotiation margin and reducing self-heating during sustained 60 W operation.

Use Scenario: Enables/disables main 3.3 V supply to NVMe SSD modules during sleep/wake transitions in ultrabooks.

IC Role / Device Role / Timing Role: Low-leakage power gate isolating SSD from battery when host CPU is in deep-sleep mode.

Use Value: <1 µA IDSS at −20 V ensures <1 µW standby loss per gate, extending battery life by >2 hours in multi-SSD configurations.

Smartphone Battery Charging Path Portable Medical Monitor Power Management

Use Scenario: Routes battery power to charging IC and system load during wired charging, preventing backfeed into charger IC.

IC Role / Device Role / Timing Role: Reverse-current blocking switch placed between battery and charging circuitry.

Use Value: −20 V VDS rating withstands battery overvoltage transients up to 18 V, while 13 A rating supports 30 W fast-charging architectures.

Use Scenario: Isolates lithium-polymer battery from patient-connected analog front-end during ESD-safe boot sequence in handheld ECG devices.

IC Role / Device Role / Timing Role: Safety-critical power enable switch with verified ESD immunity and predictable turn-off timing.

Use Value: >2000 V HBM rating meets IEC 61000-4-2 Level 4 requirements without additional protection, simplifying BOM and layout in Class II medical designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMG2307L-7 RDS(on) = 28 mΩ @ −4.5 V; SOT-23 package; no exposed pad Higher thermal resistance (256 K/W j-a); unsuitable for >3 A continuous loads on FR4 Choose only for low-current (<2 A), cost-sensitive designs where 0.65 mm height is not required
SI2301DS-T1-BE3 RDS(on) = 100 mΩ @ −4.5 V; SOT-23; 20 V rating 10× higher on-resistance increases conduction loss by >1 W at 3 A; lacks ESD hardening Select only for non-critical, low-power bias rails where thermal and ESD margins are relaxed

Compared with DMG2307L-7 and SI2301DS-T1-BE3, PMPB12R5UPEX provides 2.4× lower RDS(on), 4× better thermal resistance, and certified H2 ESD protection - making it the only viable choice for 9+ A portable power gates requiring sub-1 mm height and robust field reliability.

Availability

PMPB12R5UPEX is available at Aetrix Electronics and suitable for USB-C PD sink switching, SSD power gating, smartphone battery path control, and portable medical monitor power sequencing requiring stable component supply across high-mix, low-volume production runs.

Supply support for PMPB12R5UPEX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, serving automotive, industrial, and consumer markets with ISO/TS 16949-certified manufacturing.

PMPB12R5UPEX belongs to Nexperia's TrenchMOS portfolio - engineered specifically for space-constrained, battery-powered applications demanding low RDS(on), low-threshold drive, and robust thermal performance in sub-1 mm packages.

FAQ

What is the maximum continuous drain current for PMPB12R5UPEX at 100 °C ambient temperature?

The maximum continuous drain current is −5.9 A at Tamb = 100 °C with VGS = −4.5 V, as specified in Table 5 (Limiting Values). This derating reflects thermal constraints on standard FR4 PCBs with 6 cm² drain pad; actual current depends on board layout and airflow.

Can PMPB12R5UPEX be driven directly from a 1.8 V microcontroller GPIO?

Yes - its typical VGS(th) of −0.6 V and guaranteed −0.4 V minimum allow full enhancement at 1.8 V drive. At VGS = −1.8 V, RDS(on) is 22–35 mΩ (Table 7), supporting ≤4 A loads with acceptable conduction loss in low-duty-cycle applications.

Is the exposed drain pad electrically isolated or must it be connected to circuit ground?

The exposed drain pad is electrically connected to all drain terminals (pins 1, 2, 5, 6) and must be soldered to a PCB copper pour tied to the drain net - not ground. This connection provides both thermal conduction and low-inductance current return, critical for EMI and efficiency.

Does PMPB12R5UPEX include integrated body diode protection for reverse-current blocking?

Yes - it contains an intrinsic source-drain diode with VSD = −0.7 to −1.2 V at −1.8 A (Table 7). This diode enables reverse-current blocking in high-side switch configurations but is not rated for continuous forward conduction; external Schottky clamping is recommended for inductive flyback suppression.

PMPB12R5UPEX Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
9.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Rds On (Max) @ Id, Vgs:
14.4mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id:
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
38 nC @ 4.5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
2000 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1.9W (Ta), 12.5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DFN2020M-6

PMPB12R5UPEX FAQ

1.How can I place an order for PMPB12R5UPEX through Aetrix?

Please submit a Request for Quotation (RFQ) for PMPB12R5UPEX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMPB12R5UPEX reliable?

The price and inventory of PMPB12R5UPEX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB12R5UPEX is usually 5 days.

3.What payment methods are accepted for PMPB12R5UPEX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB12R5UPEX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMPB12R5UPEX?

PMPB12R5UPEX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMPB12R5UPEX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMPB12R5UPEX?

For technical support, including PMPB12R5UPEX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB12R5UPEX requirements.

6.How does Aetrix verify that PMPB12R5UPEX is sourced from the original manufacturer or authorized distributors?

All PMPB12R5UPEX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB12R5UPEX meets industry standards.

7.What is the process for return or replacement of PMPB12R5UPEX?

All PMPB12R5UPEX units undergo pre-shipment inspection (PSI). If there is an issue with PMPB12R5UPEX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMPB12R5UPEX part is unused and in its original packaging.

Return procedure for PMPB12R5UPEX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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