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Nexperia USA Inc. PMPB13UPX
- Part No.:
- PMPB13UPX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
PMPB13UPX.pdf
- Description:
- MOSFET P-CH 12V 9.1A DFN2020MD-6
- Quantity:
- Payment:
- Shipping:
Inventory:1,833
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Product details
Overview
PMPB13UPX from Nexperia is a 12 V, P-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) package, designed as a low-threshold charging switch or power management FET for portable electronics. It delivers RDS(on) = 13 mΩ at VGS = −4.5 V and ID = −9.1 A (Tj = 25 °C), supports −13 A continuous drain current, and features side-wettable flanks for optical solder inspection.
For engineers reviewing the PMPB13UPX datasheet, PMPB13UPX pinout, PMPB13UPX application, or PMPB13UPX equivalent, this device is selected for compact battery-powered systems requiring low gate drive voltage, high thermal efficiency via exposed drain pad, and reliable DC-to-DC converter switching under ambient temperatures up to 150 °C.
Technical Context
This P-channel MOSFET uses Trench technology to achieve low threshold voltage (VGS(th) = −0.4 to −0.9 V) and stable sub-threshold conduction, enabling efficient operation with low-voltage microcontroller GPIOs. Its drain-source breakdown voltage is rated at −12 V, and it exhibits low gate charge (QG(tot) = 26–39 nC) for fast switching in synchronous buck or load-switch topologies.
The device integrates five drain terminals and two source terminals in its 6-pin DFN2020MD-6 footprint, optimizing current handling and thermal dissipation. Thermal resistance from junction to solder point is as low as 5–10 K/W, and normalized RDS(on) increases only ~1.3× from 25 °C to 150 °C - confirming robust performance across industrial temperature ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −12 V - Maximum blocking voltage for 12 V rail protection and reverse-polarity safeguarding |
| RDS(on) | 13 mΩ @ VGS = −4.5 V, ID = −9.1 A, Tj = 25 °C - Enables <100 mW conduction loss at 9 A, critical for portable device thermal budget |
| ID (cont) | −13 A @ Tamb = 25 °C, t ≤ 5 s - Supports high peak load currents in USB-C PD or battery charging paths |
| VGS(th) | −0.6 V typ - Allows direct drive from 1.8 V or 3.3 V logic without level-shifting circuitry |
| QG(tot) | 26–39 nC - Enables <70 ns turn-off delay with 6 Ω gate resistor, suitable for >1 MHz DC-DC control |
| Rth(j-sp) | 5–10 K/W - Confirms effective heat transfer to PCB copper, essential for ultra-thin mobile PCBs with limited heatsinking |
| Ciss | 2230 pF - Defines gate drive strength requirement; compatible with standard 1-A peak gate drivers |
Pinout & Package
Package: DFN2020MD-6 (SOT1220), 2.0 × 2.0 × 0.65 mm, leadless, thermally enhanced with exposed drain pad and side-wettable flanks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6, 7 | Drain (D) | Five parallel drain terminals connected to exposed thermal pad - maximizes current capacity and minimizes thermal resistance to PCB |
| 3 | Gate (G) | Sole gate input; requires no external pull-up for high-side switch applications due to P-channel polarity |
| 4, 8 | Source (S) | Two dedicated source terminals - reduces source inductance and improves stability in high-dI/dt switching |
Key Features
| Feature | Design Value |
|---|---|
| Low threshold voltage | VGS(th) down to −0.4 V enables direct interface with 1.8 V microcontrollers and reduces gate drive power by >50% vs. standard −1.5 V threshold devices |
| Side-wettable flanks | Enables automated optical inspection (AOI) of solder joints without X-ray - critical for high-volume portable device manufacturing |
| Exposed drain pad | Provides <5 K/W junction-to-solder-point thermal resistance - allows 12.5 W total power dissipation on FR4 with 6 cm² drain pad |
| Trench MOSFET architecture | Delivers 13 mΩ RDS(on) in 2 mm² footprint - achieves 3× higher current density than planar P-channel alternatives at same voltage rating |
| Ultra-thin profile | 0.65 mm max height - fits within strict Z-height constraints of smartphones, TWS earbuds, and slim power banks |
Applications
| USB-C Charging Switch | Portable DC-DC Converter High-Side Switch |
|---|---|
|
Use Scenario: Bidirectional power path control in USB-C PD 3.0 power banks managing input charging and output discharge. IC Role / Device Role / Timing Role: P-channel load switch controlling 5–12 V input rail; operates in linear mode during inrush and switches fully on during steady-state. Use Value: Low 13 mΩ RDS(on) limits voltage drop to <117 mV at 9 A, preserving battery efficiency and reducing thermal derating. |
Use Scenario: High-side synchronous rectifier in 3.3 V/5 V buck converters powering SoCs in Bluetooth headsets. IC Role / Device Role / Timing Role: P-channel high-side switch driven by integrated controller; commutates at 1–2 MHz with <70 ns turn-off delay. Use Value: 26–39 nC QG(tot) ensures minimal gate drive loss and supports tight duty-cycle control for precise output regulation. |
| Battery Protection Circuit | HDD Power Management |
|
Use Scenario: Reverse-current blocking and overcurrent cutoff in Li-ion battery packs for medical wearables. IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET for bidirectional isolation; activated by protection IC upon fault detection. Use Value: −12 V VDS rating and −0.6 V VGS(th) ensure reliable turn-on even at end-of-discharge cell voltages (~2.8 V). |
Use Scenario: Standby power gating for 2.5-inch HDD spindle motors and controller ICs in portable NAS enclosures. IC Role / Device Role / Timing Role: Low-leakage power switch disconnecting 12 V motor supply during sleep mode; IDSS < −1 µA minimizes quiescent drain. Use Value: −1 µA drain leakage at −12 V VDS extends standby battery life beyond 30 days in always-on storage devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2011UFD-7 | RDS(on) = 15.5 mΩ @ −4.5 V; larger 2.5 × 2.5 mm DFN package; no side-wettable flanks | Lacks AOI support; less suitable for high-reliability portable assembly lines requiring optical solder verification | Preferred where board space permits and AOI is not required; identical gate drive compatibility |
| SI2301DDS-T1-BE3 | RDS(on) = 105 mΩ @ −2.5 V; SOT-23 package; higher VGS(th) (−0.7 to −1.3 V); no exposed thermal pad | Cannot sustain >2 A continuous current without significant derating; unsuitable for >5 W power switching | Only viable for low-current (<1 A), cost-sensitive applications where thermal performance is secondary |
Compared with DMN2011UFD-7 and SI2301DDS-T1-BE3, PMPB13UPX offers superior thermal performance (5–10 K/W vs. >40 K/W), AOI capability, and 8× lower RDS(on) than SI2301DDS, making it the only choice for compact, high-efficiency 9 A portable power switches.
Availability
PMPB13UPX is available at Aetrix Electronics and suitable for USB-C power banks, portable DC-DC converters, and battery protection circuits requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle availability.
Supply support for PMPB13UPX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.
The PMPB13UPX belongs to Nexperia's TrenchMOS® P-channel portfolio, engineered specifically for space-constrained, thermally demanding portable power management - emphasizing low RDS(on), low-threshold drive, and manufacturability in high-density consumer PCBs.
FAQ
Is PMPB13UPX suitable for hot-swap applications?
Yes. With −12 V VDS, −13 A peak current capability, and controlled SOA (Safe Operating Area) up to 100 ms pulses, PMPB13UPX supports controlled inrush limiting in hot-swap circuits. Its low RDS(on) and fast turn-off (69 ns td(off)) minimize energy dissipation during transient events, and the exposed drain pad ensures stable thermal response during repeated insertion cycles.
What is the maximum PCB copper area needed to achieve 12.5 W power dissipation?
A 6 cm² single-sided copper pad, tin-plated and dedicated to the exposed drain terminal, is required to achieve the rated 12.5 W Ptot at Tsp = 25 °C. This value is validated per JEDEC JESD51-2 and assumes no internal layer copper; adding inner-layer thermal vias (≥12× 0.3 mm diameter) can further reduce Rth(j-a) by ~20%.
Does PMPB13UPX require a gate resistor for ESD-safe switching?
A 10–47 Ω series gate resistor is recommended to dampen ringing and limit peak gate current during fast edge transitions, especially when driven directly from MCU GPIOs. While not mandatory for basic functionality, it improves EMI performance and prevents gate oxide stress from overshoot - confirmed by Nexperia's application note AN11158 for DFN2020MD-6 layout practices.
Can PMPB13UPX be used in back-to-back configuration for AC blocking?
Yes. Its matched threshold voltage (−0.4 to −0.9 V) and symmetrical RDS(on) behavior enable stable bidirectional blocking in back-to-back P-MOSFET configurations. When paired with an identical unit, it achieves <2 µA total leakage at ±12 V and supports true bidirectional current flow up to −9.1 A per device, meeting requirements for USB-C reversible power path designs.
PMPB13UPX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 9.1A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 39 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2230 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta), 12.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN2020MD-6
PMPB13UPX FAQ
1.How can I place an order for PMPB13UPX through Aetrix?
Please submit a Request for Quotation (RFQ) for PMPB13UPX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMPB13UPX reliable?
The price and inventory of PMPB13UPX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB13UPX is usually 5 days.
3.What payment methods are accepted for PMPB13UPX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB13UPX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMPB13UPX?
PMPB13UPX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMPB13UPX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMPB13UPX?
For technical support, including PMPB13UPX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB13UPX requirements.
6.How does Aetrix verify that PMPB13UPX is sourced from the original manufacturer or authorized distributors?
All PMPB13UPX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB13UPX meets industry standards.
7.What is the process for return or replacement of PMPB13UPX?
All PMPB13UPX units undergo pre-shipment inspection (PSI). If there is an issue with PMPB13UPX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMPB13UPX part is unused and in its original packaging.
Return procedure for PMPB13UPX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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