Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMPB13XNEZ

Name: PMPB13XNEZ
Brand: Nexperia USA Inc.
SKU: PMPB13XNEZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: PMPB13XNEZ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: PMPB13XNEZ.pdf

Description:: PMPB13XNE/SOT1220/SOT1220

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,195

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

PMPB13XNEZ from Nexperia is a single N-channel Trench MOSFET in DFN2020MD-6 (SOT1220) package, rated for 30 V V_DS, 11.3 A continuous drain current at T_amb = 25 °C, and 13 mΩ typical R_DS(on) at V_GS = 4.5 V and T_j = 25 °C. It serves as a high-efficiency power switch in portable battery management systems, featuring an exposed drain pad for thermal conduction and 1 kV ESD protection.

For engineers reviewing the PMPB13XNEZ datasheet, PMPB13XNEZ pinout, PMPB13XNEZ application, or PMPB13XNEZ equivalent, this device is selected for compact DC-DC converter switching, charging path control, and thermally constrained power management where low on-resistance and ultra-thin SMD packaging are critical.

Technical Context

This MOSFET employs Trench technology to achieve low R_DS(on) with fast switching performance: t_d(on) = 12 ns, t_r = 30 ns, t_d(off) = 54 ns, and t_f = 49 ns under standard test conditions (V_DS = 15 V, I_D = 6 A, R_G(ext) = 6 Ω). Its gate threshold voltage (V_GS(th)) ranges from 0.4 V to 0.9 V at T_j = 25 °C, enabling reliable turn-on with low-voltage logic drivers.

The device integrates an intrinsic source-drain diode with V_SD = 0.6–1.2 V at I_S = 2 A and features C_iss = 2195 pF, C_oss = 155 pF, and C_rss = 135 pF at V_DS = 15 V, supporting efficient hard-switching operation in synchronous buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines upper limit for input rail in 5 V–24 V portable power stages.
R_DS(on)	13 mΩ typ @ V_GS = 4.5 V, I_D = 8 A, T_j = 25 °C - Enables <100 mW conduction loss at 9 A, critical for thermal budget in sealed handheld enclosures.
I_D (cont)	11.3 A @ T_amb = 25 °C, t ≤ 5 s - Supports peak load currents in USB-C PD charging switches without forced airflow.
Q_G(tot)	24–36 nC - Low total gate charge reduces driver power demand and enables >1 MHz switching in space-constrained DC-DC controllers.
R_th(j-sp)	5–10 K/W - Junction-to-solder-point thermal resistance confirms effective heat transfer via exposed drain pad to PCB copper.
V_GS(th)	0.4–0.9 V @ I_D = 250 µA - Ensures robust gate turn-on with 1.8 V/2.5 V/3.3 V microcontroller GPIOs without level-shifting.

Pinout & Package

DFN2020MD-6 (SOT1220) is a 2.0 mm × 2.0 mm × 0.65 mm leadless, ultra-thin surface-mount package with an exposed drain thermal pad on the bottom side and tin-plated side terminals for optical solder inspection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6, 7	Drain (D)	Five parallel drain terminals connected to internal die drain and external thermal pad - provides low-inductance, high-current path and primary heat dissipation route.
3	Gate (G)	Single gate terminal - accepts standard CMOS-level drive; low C_iss/C_rss ratio supports stable high-frequency operation.
4, 8	Source (S)	Two dedicated source terminals - establish low-impedance return path for sense and power loops; decouples gate drive ground from high-current source return.

Key Features

Feature	Design Value
ESD protection	1 kV HBM - eliminates need for external TVS in portable device charging ports subject to human-body discharge events.
Thermal pad integration	Exposed drain pad with 6 cm² mounting area - achieves R_th(j-a) = 33–36 K/W on FR4, enabling >1.7 W continuous dissipation without heatsink.
Optical solder inspection	Tin-plated 100% solderable side pads - allows automated AOI verification of solder joint integrity in high-volume mobile PCB assembly.
Ultra-thin profile	0.65 mm max height - fits within 1.0 mm Z-height constraints of slim smartphones, wearables, and ultrabooks.

Applications

USB-C Charging Switch

Synchronous Buck Converter High-Side Switch

Use Scenario: Bidirectional power path control in dual-role USB-C devices managing host/peripheral mode negotiation and 5–20 V input selection.

IC Role / Device Role / Timing Role: N-channel high-side load switch with fast turn-on/off timing (t_d(on) = 12 ns, t_f = 49 ns) to minimize voltage droop during hot-plug transitions.

Use Value: 13 mΩ R_DS(on) limits voltage drop to <120 mV at 9 A, preserving bus voltage regulation while enabling compact 2×2 mm layout.

Use Scenario: High-efficiency step-down conversion in portable SSDs and M.2 modules requiring 3.3 V or 1.8 V rails from single-cell Li-ion (3.0–4.2 V).

IC Role / Device Role / Timing Role: Main switching transistor operating at 500 kHz–2 MHz with low Q_G(tot) (24–36 nC) to reduce gate driver losses and EMI.

Use Value: C_rss/C_iss ratio of ~6% ensures minimal duty-cycle distortion and stable loop response in current-mode controllers.

Battery Protection Circuit

Hard Disk Drive Power Management

Use Scenario: Overcurrent and short-circuit protection in smart battery packs using integrated fuel gauges and protection ICs.

IC Role / Device Role / Timing Role: Low-V_GS(th) (0.4–0.9 V) N-channel switch controlled by protection ASIC's open-drain output, enabling direct interface without pull-up resistors.

Use Value: 1 kV ESD rating protects against electrostatic discharge during battery module handling and field replacement.

Use Scenario: Spin-up current limiting and standby power gating for 2.5-inch HDDs in thin-and-light laptops.

IC Role / Device Role / Timing Role: Power enable switch with 32 A peak drain current (t_p ≤ 10 µs) to handle motor inrush without latch-up.

Use Value: Exposed drain pad sustains >3.5 W pulsed dissipation during 100 ms spin-up, preventing thermal shutdown in confined chassis.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	R_DS(on) = 19 mΩ @ 4.5 V; SO-8 package (4.9 × 6.0 mm); no exposed thermal pad	Larger footprint and higher thermal resistance (R_th(j-a) ≈ 62 K/W) - suitable only when board area and thermal margin permit.	Select when legacy SO-8 layout reuse is required and peak current ≤ 7 A.
PSMN2R0-30YL	R_DS(on) = 2.0 mΩ @ 10 V; LFPAK56 (5 × 6 mm); requires ≥ 4.5 V gate drive for full enhancement	Lower R_DS(on) but larger size and higher gate charge (Q_G = 42 nC) - better for high-current, lower-frequency (>100 kHz) industrial converters.	Select when conduction loss dominates system efficiency and Z-height > 1.0 mm is acceptable.

Compared with DMN3026LSD-13 and PSMN2R0-30YL, PMPB13XNEZ delivers optimal balance of ultra-compact size, low gate charge, and mid-range R_DS(on) for thermally dense portable power stages where 2×2 mm footprint and sub-1 mm height are non-negotiable.

Availability

PMPB13XNEZ is available at Aetrix Electronics and suitable for USB-C charging switches, synchronous buck converters, battery protection circuits, and HDD power management requiring stable component supply across high-mix consumer electronics production.

Supply support for PMPB13XNEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and consumer markets.

PMPB13XNEZ belongs to Nexperia's TrenchMOS portfolio designed specifically for space- and thermally constrained portable power management, emphasizing low R_DS(on), fast switching, and robust manufacturability in ultra-thin packages.

FAQ

What is the maximum continuous drain current for PMPB13XNEZ at 100 °C ambient temperature?

The maximum continuous drain current is 5 A at T_amb = 100 °C, as specified in Table 5 (Limiting values) under "ID drain current" with condition V_GS = 4.5 V and T_amb = 100 °C. This derating reflects thermal limitations of the DFN2020MD-6 package on standard FR4 PCBs.

Does PMPB13XNEZ require a gate resistor for stable switching in a 1 MHz DC-DC converter?

Yes - a gate resistor of 1–5 Ω is recommended to dampen ringing caused by low gate impedance and parasitic inductance. The device's R_G = 2.1 Ω and Q_G(tot) = 24–36 nC make it responsive to fast edges, but external R_G controls dV/dt and EMI without compromising t_r/t_f below 30 ns.

Can PMPB13XNEZ be used in a high-side configuration with 3.3 V GPIO drive?

Yes - its V_GS(th) range (0.4–0.9 V) and guaranteed R_DS(on) at V_GS = 3.3 V (≤ 20 mΩ per Fig. 9) allow direct drive from 3.3 V microcontrollers. However, ensure gate drive rise/fall times exceed 10 ns to avoid shoot-through in half-bridge configurations.

How is thermal performance affected if the exposed drain pad is not soldered to PCB copper?

Without solder connection to a ≥6 cm² copper pour, R_th(j-a) degrades from 33–36 K/W to ~235–270 K/W in free air, reducing safe continuous power dissipation from 1.7 W to ~0.1 W. Full thermal benefit requires compliant reflow profile and verified solder coverage per Figure 19 footprint.

PMPB13XNEZ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 8A, 4.5V

Vgs(th) (Max) @ Id:: 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2195 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.7W (Ta), 12.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DFN2020MD-6

PMPB13XNEZ FAQ

1.How can I place an order for PMPB13XNEZ through Aetrix?

Please submit a Request for Quotation (RFQ) for PMPB13XNEZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMPB13XNEZ reliable?

The price and inventory of PMPB13XNEZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB13XNEZ is usually 5 days.

3.What payment methods are accepted for PMPB13XNEZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB13XNEZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMPB13XNEZ?

PMPB13XNEZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMPB13XNEZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMPB13XNEZ?

For technical support, including PMPB13XNEZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB13XNEZ requirements.

6.How does Aetrix verify that PMPB13XNEZ is sourced from the original manufacturer or authorized distributors?

All PMPB13XNEZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB13XNEZ meets industry standards.

7.What is the process for return or replacement of PMPB13XNEZ?

All PMPB13XNEZ units undergo pre-shipment inspection (PSI). If there is an issue with PMPB13XNEZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMPB13XNEZ part is unused and in its original packaging.

Return procedure for PMPB13XNEZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…