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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMPB14R0EPX

Name: PMPB14R0EPX
Brand: Nexperia USA Inc.
SKU: PMPB14R0EPX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMPB14R0EPX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: PMPB14R0EPX.pdf

Description:: MOSFET P-CH 30V 9A DFN2020M-6

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PMPB14R0EPX from Nexperia is a P-channel enhancement-mode Trench MOSFET in a DFN2020M-6 (SOT1220-2) package, designed for high-efficiency low-side switching in portable power systems. It delivers 14 mΩ R_DS(on) at V_GS = −10 V and I_D = −8.5 A, supports −30 V drain-source voltage, and features an exposed drain pad for thermal conduction in space-constrained battery management circuits.

For engineers reviewing the PMPB14R0EPX datasheet, PMPB14R0EPX pinout, PMPB14R0EPX application, or PMPB14R0EPX equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = −1.6 V typ), ultra-thin 0.65 mm profile, FR4 PCB thermal derating behavior, and source-drain diode forward voltage of −0.7 to −1.2 V at −1.6 A.

Technical Context

This device operates as a normally-off P-channel switch with gate-controlled channel inversion in silicon trench architecture. Its −1.6 V typical threshold voltage enables direct interfacing with 3.3 V and 5 V logic controllers without level shifting, while its 227 pF input capacitance and 5.2 nC gate-drain charge support fast switching in DC-DC synchronous rectification stages.

The DFN2020M-6 package integrates five drain terminals and one source terminal on the bottom side, with gate on the top edge - enabling low-inductance layout and efficient heat transfer via the exposed drain pad. Thermal resistance from junction to solder point is 6–10 K/W, confirming suitability for thermally constrained handheld PCBs with limited copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−30 V maximum - defines safe blocking capability in 12 V and 20 V battery systems.
R_DS(on)	14 mΩ typ at V_GS = −10 V, I_D = −8.5 A, T_j = 25 °C - enables <100 mW conduction loss at 8.5 A.
V_GS(th)	−1.6 V typ - ensures reliable turn-on with standard 3.3 V microcontroller GPIOs.
I_D (cont)	−9 A max at T_amb = 25 °C - supports sustained load currents in USB-C PD and PMIC output stages.
Q_G(tot)	26.6–40 nC - determines gate driver current requirement and switching energy in high-frequency converters.
C_iss	227 pF - impacts gate drive loop stability and EMI filtering design in buck converter high-side switches.
T_j max	150 °C - sets thermal margin for operation under peak ambient conditions in sealed enclosures.

Pinout & Package

DFN2020M-6 (SOT1220-2) is a 2.0 × 2.0 × 0.65 mm leadless plastic package with an exposed drain pad on the bottom side for thermal and electrical connection. Six terminals are arranged in a single row: pins 1, 2, 5, 6, and 7 are drain; pin 3 is gate; pins 4 and 8 are source.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6, 7	Drain (D)	Primary high-current path; electrically and thermally connected to exposed pad - requires full-solder coverage on PCB for thermal performance.
3	Gate (G)	Control input; driven by logic-level voltage; low input capacitance enables fast switching with minimal driver strength.
4, 8	Source (S)	Reference node for gate drive; tied to system ground or negative rail in high-side configurations; carries return current.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = −1.6 V typ - eliminates need for external level shifters when controlled by 3.3 V MCUs.
Ultra-thin DFN package	0.65 mm height - enables stacking in slim smartphones, wearables, and ultrabooks where Z-height is critical.
Exposed drain pad	R_th(j-sp) = 6–10 K/W - reduces thermal impedance by >50% vs. standard SOT-23, improving power density.
Trench MOSFET technology	14 mΩ R_DS(on) at −10 V - achieves lower on-resistance per die area than planar P-channel alternatives.
Source-drain diode	V_SD = −0.7 to −1.2 V at −1.6 A - provides intrinsic body diode conduction for flyback and synchronous rectifier paths.

Applications

USB Power Delivery Switching

Battery Protection Circuitry

Use Scenario: Bidirectional power path control between USB-C port and Li-ion battery in portable chargers.

IC Role / Device Role / Timing Role: Low-side P-channel switch enabling reverse current blocking and load disconnect during overvoltage events.

Use Value: 14 mΩ R_DS(on) limits voltage drop to <120 mV at 8.5 A, preserving bus voltage regulation and minimizing self-heating.

Use Scenario: Overcurrent and short-circuit protection in smart battery packs using integrated fuel gauges.

IC Role / Device Role / Timing Role: Primary discharge FET controlled by battery management IC to interrupt fault current within microseconds.

Use Value: −34 A peak drain current rating supports robust response to 10 µs short-circuit transients without latch-up.

DC-DC Synchronous Rectifier

Computing VRM Output Stage

Use Scenario: Secondary-side rectification in 5 V/3.3 V buck converters powering SoCs in tablets and IoT hubs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction losses and improve efficiency above 85%.

Use Value: 227 pF C_iss and 5.2 nC Q_GD enable clean turn-off with minimal shoot-through risk at 1 MHz switching frequencies.

Use Scenario: Point-of-load (POL) regulation for CPU/GPU core voltage in thin-and-light laptops.

IC Role / Device Role / Timing Role: High-density power stage switch in compact 2-phase VRMs where board area and thermal headroom are constrained.

Use Value: 2 × 2 mm footprint and 0.65 mm height allow placement directly beneath processor BGA, reducing loop inductance and improving transient response.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2302UK-7	R_DS(on) = 48 mΩ @ −4.5 V; V_GS(th) = −1.0 to −2.5 V; SOT-23 package (3.0 × 1.4 × 1.0 mm)	Higher R_DS(on) and larger Z-height limit use in ultra-thin designs; suitable for cost-sensitive, lower-current (<3 A) applications.	Select when board space allows larger footprint and thermal budget permits higher conduction loss.
SI2301DS-T1-BE3	R_DS(on) = 115 mΩ @ −2.5 V; V_GS(th) = −0.45 to −1.2 V; SOT-23 package; lower gate charge (Q_G = 4.5 nC)	Lower gate drive voltage requirement but significantly higher on-resistance - best for <1 A loads with aggressive gate drive constraints.	Choose only for sub-1 A logic-level switching where minimal gate drive current is prioritized over efficiency.

Compared with DMG2302UK-7 and SI2301DS-T1-BE3, PMPB14R0EPX delivers superior power density (14 mΩ in 2×2 mm), lower thermal resistance, and tighter V_GS(th) distribution - making it optimal for high-current, space-constrained portable power rails where efficiency and thermal headroom are critical.

Availability

PMPB14R0EPX is available at Aetrix Electronics and suitable for USB Power Delivery switching, battery protection circuitry, and computing VRM output stages requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle availability.

Supply support for PMPB14R0EPX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors - delivering high-performance, reliable components for automotive, industrial, mobile, and computing markets.

PMPB14R0EPX belongs to Nexperia's TrenchMOS P-channel portfolio, engineered specifically for high-efficiency, low-voltage power switching in portable electronics where size, thermal performance, and logic-level compatibility are non-negotiable.

FAQ

What is the maximum continuous drain current for PMPB14R0EPX at 100 °C ambient temperature?

The maximum continuous drain current is −5.4 A at T_amb = 100 °C, as specified in Table 5 (Limiting values). This value assumes mounting on an FR4 PCB with a 6 cm² drain pad and accounts for thermal derating due to reduced heat dissipation at elevated ambient temperatures.

Can PMPB14R0EPX be used in a high-side configuration with 5 V gate drive?

No - PMPB14R0EPX is a P-channel MOSFET intended for low-side switching. In high-side configurations, the gate must be driven negative relative to the source, requiring a charge pump or bootstrap circuit. Its −1.6 V V_GS(th) supports direct 3.3 V/5 V logic drive only when source is at higher potential (i.e., low-side).

What is the recommended PCB footprint for thermal reliability?

The official Nexperia footprint (Fig. 19) specifies a 1.2 × 1.3 mm solder land for the exposed drain pad, with 0.45 mm solder paste stencil thickness. Full coverage of the pad with solder is required to achieve the rated R_th(j-sp) of 6–10 K/W and prevent thermal throttling under sustained load.

Does PMPB14R0EPX have avalanche rating or ruggedness specification?

No avalanche rating is provided in the datasheet. The device is not characterized for repetitive unclamped inductive switching (UIS) events. Designers must ensure operating conditions remain within Safe Operating Area (SOA) limits shown in Figure 3 and avoid voltage spikes exceeding −30 V V_DS.

PMPB14R0EPX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 16mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 227 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.9W (Ta), 12.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DFN2020MD-6

PMPB14R0EPX FAQ

1.How can I place an order for PMPB14R0EPX through Aetrix?

Please submit a Request for Quotation (RFQ) for PMPB14R0EPX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMPB14R0EPX reliable?

The price and inventory of PMPB14R0EPX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB14R0EPX is usually 5 days.

3.What payment methods are accepted for PMPB14R0EPX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB14R0EPX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMPB14R0EPX?

PMPB14R0EPX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMPB14R0EPX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMPB14R0EPX?

For technical support, including PMPB14R0EPX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB14R0EPX requirements.

6.How does Aetrix verify that PMPB14R0EPX is sourced from the original manufacturer or authorized distributors?

All PMPB14R0EPX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB14R0EPX meets industry standards.

7.What is the process for return or replacement of PMPB14R0EPX?

All PMPB14R0EPX units undergo pre-shipment inspection (PSI). If there is an issue with PMPB14R0EPX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMPB14R0EPX part is unused and in its original packaging.

Return procedure for PMPB14R0EPX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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