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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMPB14R7EPX

Name: PMPB14R7EPX
Brand: Nexperia USA Inc.
SKU: PMPB14R7EPX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMPB14R7EPX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: PMPB14R7EPX.pdf

Description:: MOSFET P-CH 30V 8A DFN2020M-6

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PMPB14R7EPX from Nexperia is a P-channel enhancement-mode Trench MOSFET in a DFN2020M-6 (SOT1220-2) leadless ultra-thin SMD package, rated for −30 V drain-source voltage, 14.5 mΩ R_DS(on) at V_GS = −10 V and I_D = −8 A, and −11.2 A continuous drain current at T_amb = 25 °C. It serves as a high-efficiency charging switch or power rail control device in compact battery-powered systems.

For engineers reviewing the PMPB14R7EPX datasheet, PMPB14R7EPX pinout, PMPB14R7EPX application, or PMPB14R7EPX equivalent, this part is selected for logic-level gate drive compatibility, fast switching in portable DC-DC converters, thermal performance on FR4 PCBs with 6 cm² drain pad, and space-constrained power management layouts requiring <2 mm × 2 mm footprint.

Technical Context

This MOSFET uses Trench process technology to achieve low on-resistance and high transconductance (20 S typical), enabling efficient conduction and rapid turn-on/turn-off transitions. Its gate threshold voltage of −1.5 V (typ) ensures reliable enhancement-mode operation with standard logic-level signals.

The device integrates an exposed drain pad for direct thermal coupling to the PCB, yielding R_th(j-sp) = 6–10 K/W and supporting 12.5 W total power dissipation at T_sp = 25 °C. Its SOA is defined up to −32 A peak drain current (t_p ≤ 10 µs) and −30 V V_DS, validated under junction temperatures from −55 °C to 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−30 V - Maximum blocking voltage for high-side or reverse-polarity protection circuits
R_DS(on)	14.5 mΩ (typ) at V_GS = −10 V, I_D = −8 A, T_j = 25 °C - Enables <115 mW conduction loss at 8 A load
I_D (cont)	−11.2 A at T_amb = 25 °C, t ≤ 5 s - Supports high-current pulsed loads in portable power rails
Q_G(tot)	29 nC (typ) - Low gate charge reduces driver power and enables >1 MHz switching in synchronous buck stages
R_th(j-sp)	6–10 K/W - Thermal resistance from junction to solder point confirms effective heat transfer via exposed drain pad
V_GS(th)	−1.5 V (typ) at I_D = −250 µA - Ensures full enhancement with 1.8 V or 3.3 V logic-level gate drive
C_iss	1418 pF - Input capacitance impacts gate driver sizing and EMI behavior in high-frequency switching

Pinout & Package

DFN2020M-6 (SOT1220-2) is a 2 mm × 2 mm × 0.65 mm leadless thermally enhanced plastic package with an exposed drain pad on the bottom side. The top-side terminals are arranged in a single row of six pads; pins 1, 2, 5, 6, and 7 are internally connected to drain, pin 3 is gate, and pins 4 and 8 are source.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6, 7	Drain (D)	High-current output node; electrically and thermally tied to exposed bottom pad for low-inductance, high-power routing
3	Gate (G)	Control input; requires <29 nC charge for full enhancement; sensitive to ESD (±20 V max rating)
4, 8	Source (S)	Reference node for gate drive; dual-source terminals reduce bond-wire inductance and improve current sharing

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = −1.5 V (typ) enables direct interface with 1.8 V/3.3 V microcontrollers without level-shifting
Ultra-compact footprint	2 mm × 2 mm body area saves >60% board space vs. SO-8 or TSOP-6 packages in portable designs
Exposed drain pad	Thermal resistance R_th(j-sp) = 6–10 K/W allows 12.5 W dissipation with minimal heatsinking on standard FR4
Fast switching	t_r = 7 ns, t_f = 25 ns, Q_GD = 6.2 nC - Minimizes switching losses in high-frequency DC-DC converters
Trench MOSFET architecture	Delivers 20 S forward transconductance and stable R_DS(on) over temperature (2× increase from 25 °C to 150 °C)

Applications

Charging Switch for Portable Devices

DC-to-DC Converter High-Side Switch

Use Scenario: Bidirectional USB-C power path control in smartphones and tablets, managing battery charge/discharge sequencing.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling VBUS-to-battery connection; operates in linear and saturated modes during charge enable/disable transitions.

Use Value: 14.5 mΩ R_DS(on) limits voltage drop to <116 mV at 8 A, preserving system efficiency; logic-level gate ensures compatibility with PMIC GPIOs.

Use Scenario: Synchronous rectification in buck converters powering SoCs in wearables and IoT edge nodes.

IC Role / Device Role / Timing Role: High-side power switch driven by dedicated gate controller; handles 5–20 A pulsed currents at 500 kHz–2 MHz.

Use Value: 29 nC total gate charge and 7 ns rise time support high-frequency operation with low driver loss; exposed drain pad maintains T_j < 105 °C at full load.

Power Management in Battery-Driven Portables

Computing Power Management

Use Scenario: Load switching for display backlight, camera modules, or RF subsystems in handheld medical devices and barcode scanners.

IC Role / Device Role / Timing Role: Low-quiescent-current power gate enabling rapid on/off cycling (<10 µs response) with minimal leakage (I_DSS < 1 µA).

Use Value: −1 µA drain leakage at −30 V ensures >10-year shelf life in always-on battery systems; small 2×2 mm footprint fits tight module layouts.

Use Scenario: VRM auxiliary rail control in thin-client laptops and embedded controllers, managing 3.3 V or 5 V auxiliary supplies.

IC Role / Device Role / Timing Role: Hot-swap and inrush current limiting switch placed upstream of LDOs or point-of-load regulators.

Use Value: −32 A peak drain current rating withstands capacitor inrush surges; −1.2 V source-drain diode forward drop minimizes reverse conduction loss during fault events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG1012T	R_DS(on) = 22 mΩ (typ) at V_GS = −4.5 V; smaller 1.6 mm × 1.6 mm package; no exposed drain pad	Lower thermal capability (R_th(j-a) ≈ 200 K/W); suited for <3 A continuous loads where size outweighs thermal demand	Select when board area is critical and power dissipation remains below 1.5 W; avoid for >5 A sustained operation.
SI2301DS	R_DS(on) = 105 mΩ (typ) at V_GS = −2.5 V; SOT-23 package; higher gate charge (Q_G = 4.5 nC)	Slower switching (t_f ≈ 35 ns); limited to <2.6 A continuous; widely available but less efficient at high current	Choose for cost-sensitive, low-power applications (<1 W loss budget) where thermal margin is ample and layout space permits larger SOT-23 footprint.

Compared with DMG1012T and SI2301DS, PMPB14R7EPX delivers superior thermal performance via its exposed drain pad and lower R_DS(on), making it optimal for >5 A portable power switches where efficiency and compactness must coexist.

Availability

PMPB14R7EPX is available at Aetrix Electronics and suitable for charging switches in portable devices, DC-to-DC converter high-side switches, and computing power management rails requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for PMPB14R7EPX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

PMPB14R7EPX belongs to Nexperia's TrenchMOS portfolio, engineered specifically for space- and efficiency-critical power management in portable electronics, emphasizing low R_DS(on), logic-level drive, and ultra-thin DFN packaging.

FAQ

What is the maximum continuous drain current for PMPB14R7EPX at 100 °C ambient temperature?

The maximum continuous drain current is −5.1 A at T_amb = 100 °C, per Table 5 (Limiting Values). This derating reflects thermal constraints on the FR4 PCB mounting condition with 6 cm² drain pad; actual current depends on board layout, copper area, and airflow.

Does PMPB14R7EPX require a gate resistor for stability in switching applications?

A gate resistor (typically 1–10 Ω) is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 139 pF) and PCB trace inductance. The datasheet specifies t_f = 25 ns with R_G(ext) = 6 Ω, confirming that external gate resistance directly controls switching speed and EMI.

Can PMPB14R7EPX be used in reverse polarity protection circuits?

Yes - its −30 V V_DS rating and body diode V_SD = −0.8 to −1.2 V (at I_S = −1.8 A) make it suitable for reverse-voltage protection. When placed in the high-side position with source tied to input, it blocks reverse current while conducting forward current with low R_DS(on).

Is the DFN2020M-6 package RoHS-compliant and halogen-free?

Yes - Nexperia confirms the DFN2020M-6 package for PMPB14R7EPX meets RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21, with lead-free matte tin termination and compliant molding compound.

PMPB14R7EPX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 18mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1418 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.9W (Ta), 12.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DFN2020MD-6

PMPB14R7EPX FAQ

1.How can I place an order for PMPB14R7EPX through Aetrix?

Please submit a Request for Quotation (RFQ) for PMPB14R7EPX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMPB14R7EPX reliable?

The price and inventory of PMPB14R7EPX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB14R7EPX is usually 5 days.

3.What payment methods are accepted for PMPB14R7EPX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB14R7EPX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMPB14R7EPX?

PMPB14R7EPX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMPB14R7EPX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMPB14R7EPX?

For technical support, including PMPB14R7EPX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB14R7EPX requirements.

6.How does Aetrix verify that PMPB14R7EPX is sourced from the original manufacturer or authorized distributors?

All PMPB14R7EPX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB14R7EPX meets industry standards.

7.What is the process for return or replacement of PMPB14R7EPX?

All PMPB14R7EPX units undergo pre-shipment inspection (PSI). If there is an issue with PMPB14R7EPX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMPB14R7EPX part is unused and in its original packaging.

Return procedure for PMPB14R7EPX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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