Nexperia USA Inc. PMPB14R8XNX

Overview

PMPB14R8XNX from Nexperia is a 30 V, N-channel enhancement-mode Trench MOSFET in a DFN2020M-6 (SOT1220-2) leadless ultra-thin SMD package, optimized for high-efficiency power switching in space-constrained portable electronics. It delivers R_DS(on) = 14.8 mΩ at V_GS = 4.5 V and I_D = 7.3 A (T_j = 25 °C), supports 10 A continuous drain current under pulsed conditions, and features an exposed drain pad for enhanced thermal conduction in battery-powered DC-DC converters.

For engineers reviewing the PMPB14R8XNX datasheet, PMPB14R8XNX pinout, PMPB14R8XNX application, or PMPB14R8XNX equivalent, key selection criteria include low threshold voltage (V_GS(th) = 0.65 V typ), thermal resistance R_th(j-sp) = 5.6–7 K/W, normalized R_DS(on) stability up to 150 °C, and compatibility with 1.8–4.5 V logic-level gate drive in compact power management layouts.

Technical Context

This MOSFET employs Trench technology to achieve low on-resistance and fast switching with Q_G(tot) = 4.3–6.5 nC and t_r/t_f = 5/5 ns (V_DS = 15 V, I_D = 7.3 A, R_G(ext) = 6 Ω). Its gate threshold voltage of 0.65 V (typ) enables reliable turn-on with 1.8 V microcontroller outputs, while the integrated source-drain diode (V_SD = 0.7–1.2 V at I_S = 1.5 A) supports synchronous rectification and reverse-current blocking.

The device operates across –55 °C to 150 °C junction temperature, with limiting values including V_DS = 30 V, V_GS = ±12 V, and peak drain current I_DM = 100 A (t_p ≤ 10 µs). Its SOA is defined for continuous and pulse operation on FR4 PCBs with 6 cm² drain pad, supporting stable performance in thermally demanding portable power rails.

Key Specifications

Pinout & Package

DFN2020M-6 (SOT1220-2) is a 2 mm × 2 mm × 0.65 mm leadless thermal-enhanced plastic package with an exposed drain pad on the bottom side for direct PCB thermal coupling. The top-side terminals are arranged in a single row of six positions, with pins 1, 2, 5, 6, and 7 all connected to drain and pins 3 and 4 assigned to gate and source respectively.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power switching applications.

Compared with DMN2016LFG-7 and AO3414, PMPB14R8XNX provides superior thermal conduction via its exposed drain pad and five-drain-terminal layout, enabling 7.3 A continuous operation at ambient temperatures up to 100 °C-whereas both alternatives require significant derating or additional thermal relief to meet the same current demand.

Availability

PMPB14R8XNX is available at Aetrix Electronics and suitable for charging switches in portable devices, DC-to-DC converters in mobile computing, and power management in battery-driven portables requiring stable component supply and long-term production continuity.

Supply support for PMPB14R8XNX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic components, with leadership in advanced packaging and automotive-qualified solutions.

This device belongs to Nexperia's TrenchMOS portfolio, engineered specifically for high-efficiency, space-constrained power switching in consumer and computing applications where low R_DS(on), logic-level drive, and ultra-thin packaging are mandatory.

FAQ

What is the maximum continuous drain current for PMPB14R8XNX at 100 °C ambient temperature?

The maximum continuous drain current is 4.6 A at T_amb = 100 °C, as specified in Table 5 (Limiting Values) under "ID drain current" with V_GS = 4.5 V and T_amb = 100 °C. This value assumes mounting on an FR4 PCB with single-sided copper, tin-plated, and a 6 cm² drain pad per datasheet condition [1]. Derating follows the normalized curve in Figure 2.

Does PMPB14R8XNX have integrated ESD protection on the gate?

No-PMPB14R8XNX does not include built-in gate ESD protection diodes. The absolute maximum V_GS rating is ±12 V, and gate oxide integrity relies on external handling precautions and PCB-level protection (e.g., series resistor + TVS). This is consistent with standard discrete MOSFET design practice per Nexperia's product family architecture.

Can PMPB14R8XNX be used as a high-side switch with 3.3 V gate drive?

Yes-its typical V_GS(th) of 0.65 V and guaranteed maximum of 0.9 V ensures full enhancement at 3.3 V. At V_GS = 3.3 V, R_DS(on) rises to ~19.5 mΩ (interpolated from Fig. 9), delivering ~6.5 A continuous current at 25 °C ambient-sufficient for most high-side load-switch applications in portable systems.

What is the recommended solder paste stencil thickness for DFN2020M-6 reflow?

The recommended stencil thickness is 0.1 mm, as specified in Figure 19 (Reflow soldering footprint). This thickness ensures optimal solder volume for the 0.3 mm × 0.3 mm solder pads and prevents bridging between adjacent terminals, especially critical given the 0.4 mm pitch and exposed drain pad geometry of the SOT1220-2 package.