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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMPB14XPX

Name: PMPB14XPX
Brand: Nexperia USA Inc.
SKU: PMPB14XPX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMPB14XPX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: PMPB14XPX.pdf

Description:: MOSFET DFN2020MD-6

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PMPB14XP from Nexperia is a P-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) package, rated for −12 V drain-source voltage, 14 mΩ typical R_DS(on) at V_GS = −4.5 V and I_D = −8.6 A, and −12.7 A continuous drain current at T_amb = 25 °C. It serves as a low-side power switch in portable device charging circuits and DC-DC converter high-side synchronous rectification.

For engineers reviewing the PMPB14XP datasheet, PMPB14XP pinout, PMPB14XP application, or PMPB14XP equivalent, key selection criteria include its low threshold voltage (−0.68 V typ), side-wettable flanks for solder inspection, exposed drain pad for thermal conduction, and ultra-thin 2 × 2 × 0.65 mm footprint suitable for space-constrained battery-powered systems.

Technical Context

This P-channel MOSFET uses Trench technology to achieve low on-resistance and fast switching with 22 nC total gate charge and 9 ns rise time. Its gate threshold voltage of −0.68 V (typ) enables direct drive from 1.8 V or 2.5 V logic in low-voltage power management.

The device features an integrated source-drain diode with −0.7 to −1.2 V forward voltage at −1.6 A, and operates across −55 °C to +150 °C junction temperature. Thermal resistance from junction to solder point is 4–8 K/W, supporting high-power-density PCB layouts with 6 cm² drain pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−12 V - Maximum blocking voltage for 12 V rail switching and reverse polarity protection
R_DS(on)	14 mΩ (typ) at V_GS = −4.5 V - Enables <100 mW conduction loss at 8.6 A, critical for efficiency in portable power stages
I_D (cont)	−12.7 A (t ≤ 5 s, T_amb = 25 °C) - Supports short-duration peak loads in USB PD and battery charging paths
V_GS(th)	−0.68 V (typ) - Allows full enhancement with 1.8 V GPIO, eliminating level-shifter need in low-voltage control
Q_G(tot)	22 nC (typ) - Enables fast turn-on with low gate drive power, reducing switching losses in 500 kHz–1 MHz DC-DC converters
R_th(j-sp)	4–8 K/W - Confirms effective heat transfer to PCB via exposed drain pad, enabling >1.5 W dissipation on standard FR4

Pinout & Package

DFN2020MD-6 (SOT1220) is a leadless, ultra-thin surface-mount package measuring 2.0 × 2.0 × 0.65 mm with side-wettable flanks and an exposed drain thermal pad. The package supports optical solder-joint inspection and delivers superior thermal performance over conventional SOT-23.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6, 7	Drain (D)	Five parallel drain terminals connected to internal die and exposed thermal pad - provides low-inductance, high-current path and primary heat dissipation route
3	Gate (G)	Single gate input with 5.4 Ω internal gate resistance - limits dV/dt-induced shoot-through in synchronous buck topologies
4, 8	Source (S)	Two source terminals tied to source metallization - reduces source inductance and improves stability during hard-switching

Key Features

Feature	Design Value
Low threshold voltage	V_GS(th) = −0.68 V (typ) - ensures reliable turn-on with 1.8 V/2.5 V microcontroller outputs without external level shifting
Side-wettable flanks	Plated sidewalls on all four edges - enables automated optical inspection (AOI) of solder joints, improving manufacturing yield in high-volume portable assembly
Exposed drain pad	Thermal resistance R_th(j-sp) = 4–8 K/W - allows >1.5 W continuous power dissipation on standard FR4 with 6 cm² copper area
Trench MOSFET architecture	R_DS(on) × Q_G = 0.31 nC·Ω (14 mΩ × 22 nC) - achieves high figure-of-merit for high-frequency, high-efficiency switching in compact DC-DC regulators

Applications

Charging Switch for Portable Devices

DC-to-DC Converter High-Side Switch

Use Scenario: USB-C power delivery path control in smartphones and tablets, managing bidirectional 5–20 V input routing to battery charge ICs.

IC Role / Device Role / Timing Role: Low-side load switch controlling enable/disable of charging circuitry; operates in static on/off mode with <1 µA leakage when off.

Use Value: −1 µA IDSS leakage at −12 V blocks battery self-discharge; 14 mΩ RDS(on) limits voltage drop to <120 mV at 8.6 A, preserving charging efficiency.

Use Scenario: Synchronous rectifier in 3.3 V/5 V buck converters powering SoCs and PMICs in wearables and IoT edge nodes.

IC Role / Device Role / Timing Role: High-side synchronous FET driven by dedicated gate driver; switches at 1–2 MHz with 9 ns rise time and 36 ns fall time.

Use Value: 22 nC QG(tot) enables clean switching with minimal gate drive loss; low Crss (417 pF) suppresses Miller-induced false turn-on during dV/dt transients.

Power Management in Battery-Driven Devices

Hard Disk and Computing Power Management

Use Scenario: System-level power rail sequencing and isolation in Bluetooth headsets and wireless earbuds, where board space and thermal budget are constrained.

IC Role / Device Role / Timing Role: Always-on power switch between battery and system rails; activated only during wake-up or firmware update events.

Use Value: −0.45 V minimum VGS(th) guarantees turn-on even under battery droop to 3.0 V; 0.65 mm profile fits beneath stacked PCBs in ultra-thin form factors.

Use Scenario: 12 V auxiliary rail switching in laptop SSD modules and 2.5-inch HDD enclosures, enabling selective power-down of storage subsystems.

IC Role / Device Role / Timing Role: Standby power controller interfacing with EC (Embedded Controller); toggled at sub-Hz rates during sleep/wake transitions.

Use Value: −12 V VDS rating matches legacy SATA/IDE supply rails; −100 nA IGSS gate leakage prevents unintended turn-on during long sleep states (>1 week).

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2016LFG-7	R_DS(on) = 18 mΩ (typ) at V_GS = −4.5 V; V_GS(th) = −0.7 V (min); same DFN2020MD-6 package	Higher R_DS(on) increases conduction loss by ~29% at 8.6 A; identical thermal pad layout allows drop-in replacement on existing PCBs	Select when tighter V_GS(th) distribution (−0.7 to −1.3 V) is preferred over lowest R_DS(on)
SI2301DDS-T1-BE3	R_DS(on) = 105 mΩ (typ) at V_GS = −4.5 V; SOT-23 package; V_GS(th) = −1.0 V (typ)	Significantly higher on-resistance and larger thermal resistance (R_th(j-a) ≈ 200 K/W vs. 60 K/W) limit usable current to <2 A	Choose only for cost-sensitive, low-current (<1 A) applications where board space permits SOT-23 and thermal performance is secondary

Compared with DMN2016LFG-7 and SI2301DDS-T1-BE3, PMPB14XP delivers the lowest R_DS(on) and best thermal performance in its footprint class, making it optimal for high-current, space-constrained portable power switches where efficiency and thermal headroom are critical.

Availability

PMPB14XP is available at Aetrix Electronics and suitable for portable device charging switches, DC-DC converter high-side switches, and battery-powered computing power management requiring stable component supply and consistent parametric performance across production lots.

Supply support for PMPB14XP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, mobile, and computing markets.

PMPB14XP belongs to Nexperia's TrenchMOS portfolio, engineered specifically for high-efficiency, high-density power management in battery-operated consumer electronics where low R_DS(on), small footprint, and robust thermal behavior are mandatory.

FAQ

What is the maximum continuous drain current for PMPB14XP at 100 °C ambient temperature?

The maximum continuous drain current for PMPB14XP at T_amb = 100 °C is −5.4 A, as specified in Table 5 (Limiting values). This derating reflects thermal constraints when operating without forced airflow or large copper areas, and assumes mounting on FR4 PCB with 6 cm² drain pad per datasheet condition [1].

Does PMPB14XP support logic-level gate drive from a 1.8 V microcontroller?

Yes. With a typical gate threshold voltage of −0.68 V and minimum of −0.45 V, PMPB14XP fully enhances at V_GS = −1.8 V, delivering usable R_DS(on) below 30 mΩ. The device draws only −100 nA gate leakage at V_GS = 8 V, ensuring stable off-state control from low-voltage GPIOs.

How does the side-wettable flank design impact PCB assembly verification?

The side-wettable flanks on all four edges of the DFN2020MD-6 package allow automated optical inspection (AOI) systems to directly image solder fillets along the perimeter, verifying joint integrity without X-ray. This eliminates reliance on electrical test or destructive cross-sectioning for high-volume portable device manufacturing.

Can PMPB14XP be used in place of an N-channel MOSFET in high-side switching configurations?

No - PMPB14XP is a P-channel device intended for high-side switching *without* a gate driver, unlike N-channel FETs which require bootstrap or isolated gate drive. Its −12 V V_DS rating and −0.68 V V_GS(th) make it suitable for direct high-side 12 V rail control, but it cannot replace N-channel devices in circuits requiring negative gate drive or level-shifting.

PMPB14XPX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 12.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 19mOhm @ 8.6A, 4.5V

Vgs(th) (Max) @ Id:: 950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 2303 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 3.9W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DFN2020MD-6

PMPB14XPX FAQ

1.How can I place an order for PMPB14XPX through Aetrix?

Please submit a Request for Quotation (RFQ) for PMPB14XPX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMPB14XPX reliable?

The price and inventory of PMPB14XPX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB14XPX is usually 5 days.

3.What payment methods are accepted for PMPB14XPX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB14XPX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMPB14XPX?

PMPB14XPX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMPB14XPX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMPB14XPX?

For technical support, including PMPB14XPX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB14XPX requirements.

6.How does Aetrix verify that PMPB14XPX is sourced from the original manufacturer or authorized distributors?

All PMPB14XPX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB14XPX meets industry standards.

7.What is the process for return or replacement of PMPB14XPX?

All PMPB14XPX units undergo pre-shipment inspection (PSI). If there is an issue with PMPB14XPX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMPB14XPX part is unused and in its original packaging.

Return procedure for PMPB14XPX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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