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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMPB14XPZ

Name: PMPB14XPZ
Brand: Nexperia USA Inc.
SKU: PMPB14XPZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMPB14XPZ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: PMPB14XPZ.pdf

Description:: PMPB14XP/SOT1220/SOT1220

Quantity:: RFQ Add To RFQ list

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Inventory:9,564

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Product details

Overview

PMPB14XPZ from Nexperia is a 12 V, P-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) leadless ultra-thin SMD package, designed for high-efficiency power switching in portable electronics. It delivers 14 mΩ R_DS(on) at V_GS = −4.5 V and I_D = −8.6 A (T_j = 25 °C), supports −12.7 A pulsed drain current, and features side-wettable flanks for optical solder inspection - enabling reliable use as a charging switch or DC-DC converter high-side switch.

For engineers reviewing the PMPB14XPZ datasheet, PMPB14XPZ pinout, PMPB14XPZ application, or PMPB14XPZ equivalent, key selection criteria include low threshold voltage (−0.68 V typ), exposed drain pad for thermal conduction, FR4 PCB-compatible 6 cm² mounting pad, and validated performance in battery-powered power management circuits with ambient temperatures up to 150 °C.

Technical Context

This P-channel MOSFET uses Trench technology to achieve low on-resistance and fast switching with minimal gate charge (Q_G(tot) = 22–42 nC). Its gate-source threshold voltage (V_GS(th) = −0.45 to −0.9 V) enables direct logic-level drive from 1.8 V or 2.5 V controllers without level shifting.

The device integrates an intrinsic source-drain diode (V_SD = −0.7 to −1.2 V at I_S = −1.6 A), supports peak drain currents up to −35 A (t_p ≤ 10 µs), and maintains stable R_DS(on) across junction temperatures from −55 °C to 150 °C - confirmed by normalized R_DS(on) vs. T_j curves.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−12 V maximum drain-source voltage - defines safe blocking capability in 12 V rail applications.
R_DS(on)	14 mΩ typical at V_GS = −4.5 V, I_D = −8.6 A, T_j = 25 °C - enables <100 mW conduction loss at 8.6 A.
V_GS(th)	−0.68 V typical gate-source threshold - ensures turn-on with low-voltage microcontrollers (e.g., 1.8 V GPIO).
I_D (continuous)	−8.6 A at T_amb = 25 °C on FR4 PCB with 6 cm² drain pad - sets steady-state current handling under standard layout.
Q_G(tot)	22–42 nC total gate charge - determines required gate driver strength and switching energy.
R_th(j-sp)	4–8 K/W junction-to-solder-point thermal resistance - enables efficient heat transfer to PCB copper.
Package	DFN2020MD-6 (SOT1220): 2.0 × 2.0 × 0.65 mm, leadless, exposed drain pad, side-wettable flanks.

Pinout & Package

DFN2020MD-6 (SOT1220) is a thermally enhanced, ultra-thin, leadless plastic package with an exposed drain pad on the bottom surface. Its side-wettable flanks support automated optical inspection (AOI) of solder joints. The package measures 2.0 mm × 2.0 mm × 0.65 mm and requires a standardized 6-pad reflow footprint per Figure 19 of the datasheet.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6, 7	Drain (D)	Five parallel drain terminals connected to the exposed bottom pad - provides low-inductance, high-current path and primary thermal conduction route to PCB.
3	Gate (G)	Single gate terminal - accepts logic-level control signals; gate resistance is 5.4 Ω typical, limiting ringing during fast switching.
4, 8	Source (S)	Two dedicated source terminals - complete the power loop with minimal parasitic inductance; referenced to system ground in high-side switch configurations.

Key Features

Feature	Design Value
Low threshold voltage	V_GS(th) = −0.68 V typ - enables direct interface with 1.8 V/2.5 V microcontrollers without external level shifters.
Side-wettable flanks	Plated sidewalls on all eight terminals - allows automated optical inspection (AOI) of solder joint quality post-reflow.
Exposed drain pad	Thermal resistance R_th(j-sp) = 4–8 K/W - reduces junction temperature rise by >50% vs. non-exposed equivalents on same PCB.
Trench MOSFET architecture	R_DS(on) × Q_G figure-of-merit = ~300 mΩ·nC - balances conduction and switching losses for portable DC-DC efficiency.
Ultra-thin profile	0.65 mm max height - meets strict Z-height requirements in slim smartphones, wearables, and ultrabooks.

Applications

Charging Switch

DC-DC Converter High-Side Switch

Use Scenario: Bidirectional USB-C power delivery path control in smartphones and tablets, managing charge flow between battery and port.

IC Role / Device Role: P-channel high-side load switch controlling VBUS routing with reverse-current blocking.

Use Value: Low R_DS(on) minimizes voltage drop (<120 mV at 8.6 A), preserving battery runtime; side-wettable flanks ensure AOI-verified reliability in high-volume assembly.

Use Scenario: Synchronous buck converter top switch in portable SSDs and embedded computing modules operating from single-cell Li-ion (3.0–4.2 V).

IC Role / Device Role: High-side P-channel MOSFET in non-isolated step-down regulator, driven by integrated gate controller.

Use Value: 22–42 nC Q_G(tot) enables <100 ns switching transitions; 14 mΩ R_DS(on) sustains >92% efficiency at 5 A output with minimal heatsinking.

Battery Power Management

Hard Disk Drive Power Control

Use Scenario: System power rail enable/disable in Bluetooth headsets and wireless earbuds, where standby current must be <1 µA.

IC Role / Device Role: Load switch isolating PMIC outputs or sensor subsystems during deep sleep modes.

Use Value: IDSS ≤ −1 µA at VDS = −12 V ensures negligible leakage; −0.68 V VGS(th) guarantees full turn-off with 0 V gate drive.

Use Scenario: Spindle motor and actuator power sequencing in 2.5-inch laptop HDDs, requiring robust overcurrent and thermal protection.

IC Role / Device Role: Main power switch supplying +5 V or +12 V to drive circuitry, controlled by baseband processor GPIO.

Use Value: −35 A peak drain current handles HDD spin-up surges; R_th(j-a) = 27–32 K/W (with 6 cm² pad) prevents thermal shutdown during sustained 5 A loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2020LFG-7	R_DS(on) = 17 mΩ @ V_GS = −4.5 V; V_GS(th) = −0.7 V typ; same DFN2020MD-6 package.	Slightly higher on-resistance increases conduction loss by ~21% at 8.6 A; identical thermal and footprint compatibility.	Select when Nexperia stock is constrained; verify gate drive margin due to tighter V_GS(th) distribution.
SI2301-CDS	R_DS(on) = 115 mΩ @ V_GS = −2.5 V; V_GS(th) = −0.7 V; SOT-23 package (3.0 × 1.4 × 1.1 mm).	Higher R_DS(on) and larger Z-height limit use to <1 A loads; lacks side-wettable flanks and exposed drain pad.	Only suitable for low-current (<500 mA), cost-sensitive applications where thermal performance and AOI are not critical.

Compared with DMN2020LFG-7, PMPB14XPZ offers lower R_DS(on) and better thermal dissipation; versus SI2301-CDS, it delivers 8× lower on-resistance and 40% smaller footprint with superior manufacturability - making it optimal for space-constrained, high-current portable power switches.

Availability

PMPB14XPZ is available at Aetrix Electronics and suitable for charging switches, DC-DC converters, and battery-driven portable device power management requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for PMPB14XPZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-grade and industrial MOSFETs, ESD protection, and logic ICs.

The PMPB14XPZ belongs to Nexperia's TrenchMOS P-channel portfolio, engineered specifically for compact, high-efficiency power switching in battery-powered consumer electronics - emphasizing low R_DS(on), logic-level drive, and AOI-ready packaging.

FAQ

What is the maximum continuous drain current for PMPB14XPZ under standard PCB conditions?

The maximum continuous drain current is −8.6 A at T_amb = 25 °C when mounted on an FR4 PCB with a 6 cm² single-sided copper drain pad. This rating drops to −5.4 A at T_amb = 100 °C due to thermal derating, as defined in Table 5 of the datasheet.

Does PMPB14XPZ require a gate resistor for stable switching in a 1 MHz DC-DC converter?

Yes - a 6 Ω external gate resistor is specified in the datasheet for timing measurements (td(off), tf), and using one mitigates gate oscillation and EMI. The device's 5.4 Ω typical gate resistance alone is insufficient for clean 1 MHz switching; adding 6–10 Ω ensures controlled dV/dt and prevents shoot-through in synchronous topologies.

Can PMPB14XPZ be used in automotive infotainment power rails?

No - PMPB14XPZ is not AEC-Q101 qualified and lacks automotive-grade validation per Nexperia's legal disclaimers. It is explicitly designated for consumer portable electronics; automotive use requires verified alternatives like the PMV31XN or NX3008PBK.

How does the side-wettable flank design impact reflow process yield?

The side-wettable flanks enable automated optical inspection (AOI) of solder fillet formation on all eight terminals, increasing first-pass yield by detecting voids, insufficient solder, or bridging before functional test. This eliminates reliance on X-ray for hidden-joint verification and reduces field failure rates in high-density portable PCB assemblies.

PMPB14XPZ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 8.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 19mOhm @ 8.6A, 4.5V

Vgs(th) (Max) @ Id:: 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 2303 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 15.6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DFN2020MD-6

PMPB14XPZ FAQ

1.How can I place an order for PMPB14XPZ through Aetrix?

Please submit a Request for Quotation (RFQ) for PMPB14XPZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMPB14XPZ reliable?

The price and inventory of PMPB14XPZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB14XPZ is usually 5 days.

3.What payment methods are accepted for PMPB14XPZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB14XPZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMPB14XPZ?

PMPB14XPZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMPB14XPZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMPB14XPZ?

For technical support, including PMPB14XPZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB14XPZ requirements.

6.How does Aetrix verify that PMPB14XPZ is sourced from the original manufacturer or authorized distributors?

All PMPB14XPZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB14XPZ meets industry standards.

7.What is the process for return or replacement of PMPB14XPZ?

All PMPB14XPZ units undergo pre-shipment inspection (PSI). If there is an issue with PMPB14XPZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMPB14XPZ part is unused and in its original packaging.

Return procedure for PMPB14XPZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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