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Nexperia USA Inc. PMPB15XN,115
- Part No.:
- PMPB15XN,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
PMPB15XN,115.pdf
- Description:
- MOSFET N-CH 20V 7.3A DFN2020MD-6
- Quantity:
- Payment:
- Shipping:
Inventory:9,796
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Product details
Overview
PMPB15XN from Nexperia is a single N-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) package, rated for 20 V drain-source voltage, 10.4 A continuous drain current at 25 °C, and 18 mΩ typical RDS(on) at VGS = 4.5 V and ID = 7.3 A. It serves as a high-efficiency charging switch or power management switch in portable battery-powered systems.
For engineers reviewing the PMPB15XN datasheet, PMPB15XN pinout, PMPB15XN application, or PMPB15XN equivalent, key selection criteria include its ultra-thin 2 × 2 × 0.65 mm leadless package with exposed drain pad, low gate charge (13.4 nC typ), and thermal resistance of 33 K/W (junction-to-ambient, 6 cm² drain pad).
Technical Context
This MOSFET employs Trench technology to achieve low on-resistance and fast switching with minimal gate drive requirements. Its gate threshold voltage (0.4–0.9 V) enables compatibility with 1.8 V and higher logic-level control, and its source-drain diode supports synchronous rectification in DC-DC converters.
The device features an integrated exposed drain pad for direct thermal conduction to PCB copper, and side-wettable flanks (tin-plated terminals) support automated optical solder inspection. Its safe operating area (SOA) is defined up to 24 A peak drain current with 10 µs pulse width and 20 V VDS.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V maximum - defines maximum blocking voltage in high-side or low-side switch configurations |
| RDS(on) | 18 mΩ typ @ VGS = 4.5 V, ID = 7.3 A, Tj = 25 °C - enables <175 mW conduction loss at 7.3 A |
| ID (cont) | 10.4 A @ Tamb = 25 °C, t ≤ 5 s - supports high-current burst loads in portable power rails |
| QG(tot) | 13.4 nC typ - reduces gate drive power and enables efficient 1–2 MHz switching in buck converters |
| Rth(j-a) | 33 K/W @ 6 cm² drain pad - allows ~52 °C temperature rise at 1.7 W dissipation under standard FR4 layout |
| VGS(th) | 0.65 V typ @ ID = 250 µA - ensures reliable turn-on with 1.8 V microcontroller GPIO |
| Ciss | 1240 pF - contributes to predictable gate drive timing and EMI behavior in hard-switched topologies |
Pinout & Package
Package: DFN2020MD-6 (SOT1220), 2.0 × 2.0 × 0.65 mm, leadless, thermally enhanced with exposed drain pad and side-wettable flanks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6, 7 | Drain (D) | Five parallel drain terminals connected to exposed pad - provides low-inductance, high-current path and primary thermal conduction route |
| 3 | Gate (G) | Single gate input - requires <14 nC total charge for full enhancement; low Ciss/Crss ratio improves noise immunity |
| 4, 8 | Source (S) | Two dedicated source terminals - form low-impedance return path; enable Kelvin sensing in precision current monitoring designs |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOSFET architecture | Delivers 18 mΩ RDS(on) at 4.5 V drive while maintaining robust 20 V breakdown margin |
| Exposed drain pad + side-wettable flanks | Enables IR-reflow process control via AOI and achieves 33 K/W thermal resistance with 6 cm² PCB copper |
| Ultra-thin 0.65 mm profile | Supports space-constrained applications such as slim smartphones and ultraportable SSDs |
| Low VGS(th) (0.65 V typ) | Guarantees turn-on with 1.8 V logic without level-shifting, reducing BOM count in battery management ICs |
| 10.4 A continuous current rating | Meets USB PD 3.0 sink-side load switch requirements up to 20 V/3 A with margin |
Applications
| Charging Switch in Smartphones | Step-Down Converter High-Side Switch |
|---|---|
|
Use Scenario: Controls battery charging path between USB input and Li-ion cell in compact mobile devices. IC Role / Device Role: Low-side or high-side load switch enabling/disabling charge current flow. Use Value: 18 mΩ RDS(on) limits voltage drop to <130 mV at 7 A, preserving charging efficiency and thermal headroom. |
Use Scenario: Serves as upper switch in synchronous buck converter powering SoC core rails. IC Role / Device Role: High-frequency power switch operating at 1–2 MHz with 13.4 nC gate charge. Use Value: Low QG/QGD ratio (13.4 nC / 2.6 nC) minimizes shoot-through risk and improves duty-cycle fidelity. |
| Hard Disk Drive Power Gate | Portable SSD Power Management |
|
Use Scenario: Isolates 5 V/12 V power domains during HDD spin-up and standby transitions. IC Role / Device Role: Inrush-limited power gate with controlled turn-on via gate resistor. Use Value: 24 A peak drain current rating handles HDD motor surge without derating, even at 100 °C ambient. |
Use Scenario: Enables rapid power sequencing and rail shutdown in NVMe M.2 SSD modules. IC Role / Device Role: Compact, thermally efficient power switch for 3.3 V VCC and 1.8 V VDDQ supplies. Use Value: 2 × 2 mm footprint and 0.65 mm height allow placement directly beneath BGA packages without interference. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LFG-7 | RDS(on) = 22 mΩ @ 4.5 V; same DFN2020-6 package but no exposed drain pad | Higher thermal resistance (55 K/W vs. 33 K/W); unsuitable for >5 A continuous operation without thermal derating | Select when cost sensitivity outweighs thermal performance and board area permits larger copper pads |
| SI2302DS-T1-GE3 | RDS(on) = 35 mΩ @ 4.5 V; SOT-23 package, 1.45 W Ptot, no side-wettable flanks | Larger RDS(on) increases conduction loss by >90 %; limited to <3 A continuous in same PCB layout | Choose only for legacy SOT-23 footprints where re-layout is prohibited and current demand is ≤2.5 A |
Compared with DMN2020LFG-7 and SI2302DS-T1-GE3, PMPB15XN delivers superior thermal performance and lower conduction loss in space-constrained portable designs-enabling higher current density without increasing PCB copper area or compromising reliability at elevated junction temperatures.
Availability
PMPB15XN is available at Aetrix Electronics and suitable for charging switches in smartphones, high-side switches in DC-DC converters, and power gating in hard disk drives requiring stable component supply across production lifecycles.
Supply support for PMPB15XN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-grade MOSFETs and ESD protection.
PMPB15XN belongs to Nexperia's TrenchMOS® medium-power portfolio, engineered specifically for space- and thermally constrained battery-powered consumer electronics requiring low RDS(on), fast switching, and AOI-compatible packaging.
FAQ
What is the maximum continuous drain current for PMPB15XN at 100 °C ambient temperature?
The maximum continuous drain current is 4.6 A at Tamb = 100 °C with device mounted on an FR4 PCB having a 6 cm² tin-plated drain pad. This value is derived from thermal derating curves in Figure 2 of the datasheet and accounts for junction temperature limits of 150 °C under steady-state conditions.
Does PMPB15XN support logic-level gate drive from a 1.8 V microcontroller?
Yes. With a typical gate threshold voltage of 0.65 V and guaranteed minimum of 0.4 V, PMPB15XN fully enhances at 1.8 V VGS, delivering 7.3 A drain current at RDS(on) = 21 mΩ (max) - confirmed in Table 7 and Figure 10 of the datasheet.
How does the DFN2020MD-6 package differ from standard DFN2020-6?
DFN2020MD-6 (SOT1220) adds an exposed drain pad and side-wettable flanks to the base DFN2020 footprint. These features reduce thermal resistance by ~40 % and enable automated optical inspection of solder joints - critical for high-yield manufacturing of portable electronics.
Can PMPB15XN be used in synchronous rectification applications?
Yes. Its integrated source-drain diode has VSD = 0.7–1.2 V at 2 A and exhibits soft reverse recovery characteristics. When paired with appropriate gate timing, it functions effectively as a synchronous rectifier in buck or flyback topologies up to 20 V output.
PMPB15XN,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 7.3A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20.2 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1240 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.7W (Ta), 12.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN2020MD-6
PMPB15XN,115 FAQ
1.How can I place an order for PMPB15XN,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMPB15XN,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMPB15XN,115 reliable?
The price and inventory of PMPB15XN,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB15XN,115 is usually 5 days.
3.What payment methods are accepted for PMPB15XN,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB15XN,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMPB15XN,115?
PMPB15XN,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMPB15XN,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMPB15XN,115?
For technical support, including PMPB15XN,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB15XN,115 requirements.
6.How does Aetrix verify that PMPB15XN,115 is sourced from the original manufacturer or authorized distributors?
All PMPB15XN,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB15XN,115 meets industry standards.
7.What is the process for return or replacement of PMPB15XN,115?
All PMPB15XN,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMPB15XN,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMPB15XN,115 part is unused and in its original packaging.
Return procedure for PMPB15XN,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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