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Nexperia USA Inc. PMPB15XP,115
- Part No.:
- PMPB15XP,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
PMPB15XP,115.pdf
- Description:
- MOSFET P-CH 12V 8.2A DFN2020MD-6
- Quantity:
- Payment:
- Shipping:
Inventory:853
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Product details
Overview
PMPB15XP from NXP Semiconductors is a single P-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) package, designed for high-efficiency low-side switching in portable power management. It delivers 15 mΩ RDS(on) at VGS = −4.5 V and ID = −8.2 A, supports −12 V drain-source voltage, −11.8 A continuous drain current (Tamb = 25 °C), and features an exposed drain pad for thermal conduction in space-constrained battery-powered devices.
For engineers reviewing the PMPB15XP datasheet, PMPB15XP pinout, PMPB15XP application, or PMPB15XP equivalent, key selection criteria include its ultra-thin 2 × 2 × 0.65 mm footprint, 1.5 kV HBM ESD rating, normalized RDS(on) stability up to 150 °C, and suitability for DC-DC converter high-side synchronous rectification where gate drive compatibility with 1.8–4.5 V logic is required.
Technical Context
This P-channel MOSFET uses Trench MOSFET technology to achieve low on-resistance and fast switching performance. Its gate threshold voltage (VGS(th)) ranges from −0.47 V to −0.9 V at 25 °C, enabling reliable turn-on with low-voltage control signals. The device operates with a maximum junction temperature of 150 °C and exhibits stable RDS(on) across temperature due to its optimized silicon structure.
Thermal design is supported by a low Rth(j-sp) of 5–10 K/W to solder point and Rth(j-a) of 67–74 K/W on a 6 cm² drain pad PCB. Its dynamic characteristics include 67–100 nC total gate charge and 530 pF reverse transfer capacitance (Crss), enabling efficient operation in high-frequency switching applications up to several hundred kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −12 V - Maximum drain-source blocking voltage; defines safe operating range in 12 V rail systems. |
| RDS(on) | 15 mΩ (typ) at VGS = −4.5 V, ID = −8.2 A, Tj = 25 °C - Enables <150 mW conduction loss at 8 A, critical for thermal budget in compact designs. |
| ID | −11.8 A (max, t ≤ 5 s) - Supports short-duration peak loads in portable device power sequencing. |
| VGS(th) | −0.68 V (typ) - Ensures robust turn-on with 1.8 V logic-level gate drivers without requiring level-shifting. |
| QG(tot) | 67–100 nC - Determines gate drive power requirement and switching speed in PWM-controlled DC-DC stages. |
| Rth(j-sp) | 5–10 K/W - Enables direct thermal coupling to PCB copper, reducing junction-to-board temperature rise by >50 % vs. standard SOT packages. |
| Crss | 530 pF - Limits Miller-induced shoot-through risk in synchronous buck topologies with fast gate transitions. |
Pinout & Package
DFN2020MD-6 (SOT1220) is a leadless, ultra-thin surface-mount package measuring 2.0 × 2.0 × 0.65 mm with an exposed drain pad for enhanced thermal dissipation. The package features tin-plated side pads for optical solder inspection and is optimized for reflow assembly on FR4 PCBs with a 6 cm² drain mounting pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6, 7 | Drain (D) | Five parallel drain terminals connected to the exposed thermal pad - provides low-inductance, high-current path and primary heat extraction route. |
| 3 | Gate (G) | Single gate input terminal - requires <100 nA leakage current handling and drives 67–100 nC total charge for full enhancement. |
| 4, 8 | Source (S) | Two source terminals - form low-impedance return path for load current and reference node for gate drive voltage. |
Key Features
| Feature | Design Value |
|---|---|
| 1.5 kV HBM ESD protection | Eliminates need for external transient suppression in handheld device front-end switches, reducing BOM count and board area. |
| Exposed drain pad | Reduces thermal resistance to solder point by >80 % vs. conventional SO-8, enabling 1.7 W power dissipation on standard FR4. |
| Trench MOSFET architecture | Delivers 15 mΩ RDS(on) in 2 mm² footprint - achieves same on-resistance as larger SOT-23 devices while cutting board space by 65 %. |
| Optimized for 1.8–4.5 V gate drive | Supports direct interface with modern low-voltage microcontrollers and PMICs without gate driver ICs, simplifying power tree design. |
| Tin-plated side pads | Enables automated optical inspection (AOI) of solder joints - improves manufacturing yield and eliminates X-ray verification cost. |
Applications
| Charging Switch for Portable Devices | DC-DC Converter High-Side Switch |
|---|---|
|
Use Scenario: Bidirectional charging control in USB-C PD power banks, managing current flow between battery and Type-C port during charge/discharge cycles. IC Role / Device Role / Timing Role: Low-side P-channel switch controlling battery discharge path; operates in linear and saturated modes during inrush limiting and steady-state conduction. Use Value: 15 mΩ RDS(on) limits voltage drop to <125 mV at 8.2 A, preserving battery runtime and minimizing thermal stress in sealed enclosures. |
Use Scenario: High-side synchronous rectifier in 3.3 V/5 V buck converters powering SoCs in tablets and wearables. IC Role / Device Role / Timing Role: P-channel MOSFET replacing Schottky diode in synchronous rectification stage; driven by integrated gate controller with dead-time management. Use Value: Reduces conduction loss by 60 % vs. 0.4 V Schottky, improving converter efficiency from 88 % to 93 % at 2 A load. |
| Power Management in Battery-Driven Portables | Hard Disk Drive Power Sequencing |
|
Use Scenario: System power rail enable/disable in Bluetooth headsets and wireless earbuds, isolating peripherals during sleep mode. IC Role / Device Role / Timing Role: Load switch providing controlled inrush current and reverse-current blocking; gate driven by GPIO with soft-start timing. Use Value: −0.68 V VGS(th) ensures full enhancement with 1.8 V I/O, eliminating need for external level shifters in ultra-low-power domains. |
Use Scenario: Controlled 12 V spindle motor power-up in 2.5-inch HDDs, preventing voltage droop and bus contention during spin-up surge. IC Role / Device Role / Timing Role: High-current P-channel switch activated after 5 V logic rail stabilization; handles 11.8 A peak inrush for <5 s. Use Value: 33 A peak drain current rating accommodates HDD startup surges without derating, ensuring reliable mechanical initialization. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG1012UVT-7 | RDS(on) = 22 mΩ (VGS = −4.5 V); smaller 1.6 × 1.6 mm package; no exposed drain pad. | Limited to ≤5 A continuous use due to higher thermal resistance (Rth(j-a) ≈ 120 K/W). | Select when board space is more constrained than thermal budget and peak current <5 A. |
| Si2301DDS-T1-GE3 | RDS(on) = 105 mΩ (VGS = −2.5 V); higher threshold (−0.7 to −1.3 V); SOT-23 package. | Requires stronger gate drive; unsuitable for high-current DC-DC stages but adequate for low-power load switching. | Select only for <1 A applications where cost is prioritized over efficiency and thermal performance. |
Compared with DMG1012UVT-7 and Si2301DDS-T1-GE3, PMPB15XP offers superior thermal performance via its exposed drain pad and lower RDS(on), making it the preferred choice for ≥8 A portable power rails where efficiency and reliability under sustained load are critical.
Availability
PMPB15XP is available at Aetrix Electronics and suitable for charging switches in portable devices, DC-DC converter high-side switches, and hard disk drive power sequencing requiring stable component supply and long-term industrial availability.
Supply support for PMPB15XP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.
The PMPB15XP belongs to NXP's TrenchMOS portfolio, engineered specifically for high-efficiency, space-constrained power management in battery-operated electronics - emphasizing low RDS(on), robust ESD tolerance, and thermal performance in ultra-thin packages.
FAQ
What is the maximum continuous drain current for PMPB15XP at 100 °C ambient temperature?
The maximum continuous drain current for PMPB15XP is −5.2 A at Tamb = 100 °C, as specified in Table 5 (Limiting Values) under conditions VGS = −4.5 V and device mounted on an FR4 PCB with 6 cm² drain pad. This derating reflects thermal limitations rather than electrical failure thresholds.
Does PMPB15XP require a gate resistor for stable switching in DC-DC applications?
A gate resistor is recommended to control dV/dt and prevent oscillation, especially given its 67–100 nC total gate charge and 530 pF Crss. A 6 Ω external resistor is used in the datasheet's fall time test condition (VDS = −6 V, ID = −8.2 A), confirming its effectiveness in damping ringing during turn-off.
Can PMPB15XP be used in automotive applications?
No - PMPB15XP is not automotive-qualified. The datasheet explicitly states in Section 12.4 that "Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use." It lacks AEC-Q101 qualification and automotive-grade reliability testing.
How does the DFN2020MD-6 package improve thermal performance compared to standard SOT-23?
The DFN2020MD-6 package reduces thermal resistance from junction to solder point to 5–10 K/W, versus ~150 K/W for standard SOT-23, by integrating a large exposed drain pad directly connected to PCB copper. This allows >80 % of heat to dissipate through the pad rather than leads, enabling 1.7 W power dissipation on FR4 without heatsinks.
PMPB15XP,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 8.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2875 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.7W (Ta), 12.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN2020MD-6
PMPB15XP,115 FAQ
1.How can I place an order for PMPB15XP,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMPB15XP,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMPB15XP,115 reliable?
The price and inventory of PMPB15XP,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB15XP,115 is usually 5 days.
3.What payment methods are accepted for PMPB15XP,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB15XP,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMPB15XP,115?
PMPB15XP,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMPB15XP,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMPB15XP,115?
For technical support, including PMPB15XP,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB15XP,115 requirements.
6.How does Aetrix verify that PMPB15XP,115 is sourced from the original manufacturer or authorized distributors?
All PMPB15XP,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB15XP,115 meets industry standards.
7.What is the process for return or replacement of PMPB15XP,115?
All PMPB15XP,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMPB15XP,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMPB15XP,115 part is unused and in its original packaging.
Return procedure for PMPB15XP,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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