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Nexperia USA Inc. PMPB15XPH
- Part No.:
- PMPB15XPH
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
PMPB15XPH.pdf
- Description:
- MOSFET P-CH 12V 8.2A DFN2020MD-6
- Quantity:
- Payment:
- Shipping:
Inventory:2,950
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Product details
Overview
PMPB15XPH from NXP Semiconductors is a single P-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) package, rated for −12 V drain-source voltage and −11.8 A continuous drain current at 25 °C. It delivers 15 mΩ typical RDS(on) at VGS = −4.5 V and ID = −8.2 A, features an exposed drain pad for thermal conduction, and serves as a high-efficiency charging switch in portable battery-powered systems.
For engineers reviewing the PMPB15XPH datasheet, PMPB15XPH pinout, PMPB15XPH application, or PMPB15XPH equivalent, this device is selected for low-voltage power switching where compact size, ESD robustness (1.5 kV HBM), and thermally enhanced SMD packaging are critical - especially in space-constrained DC-DC converters and portable device power management.
Technical Context
This P-channel MOSFET uses Trench MOSFET technology to achieve low on-resistance and fast switching performance. Its gate threshold voltage (VGS(th)) ranges from −0.47 V to −0.9 V at 25 °C, enabling reliable turn-on with logic-level gate drive down to −1.8 V, while maintaining low leakage (≤1 µA at VDS = −12 V, Tj = 25 °C).
The device integrates five drain terminals and two source terminals in its 6-pin DFN2020MD-6 footprint, optimizing current handling and thermal dissipation. With Rth(j-sp) of 5–10 K/W and a 6 cm² drain mounting pad on FR4 PCB, it supports up to 3.5 W pulsed power dissipation and 1.7 W continuous at ambient temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −12 V maximum - defines safe blocking capability in low-voltage P-channel high-side switch configurations |
| RDS(on) | 15 mΩ typ @ VGS = −4.5 V, ID = −8.2 A - enables <100 mW conduction loss at 8 A, critical for efficiency in portable power rails |
| ID (cont) | −11.8 A @ Tamb = 25 °C, t ≤ 5 s - supports high peak load currents in battery charging paths |
| VGS(th) | −0.68 V typ @ ID = −250 µA - ensures strong turn-on with standard 1.8 V/2.5 V/3.3 V logic-compatible gate drive |
| QG(tot) | 67 nC typ - determines gate drive energy and switching speed in PWM-controlled power stages |
| Rth(j-sp) | 5–10 K/W - quantifies thermal path from junction to solder point, enabling accurate board-level thermal design |
| ESD HBM | 1.5 kV - provides robustness against handling-induced electrostatic discharge in automated assembly |
Pinout & Package
Package: DFN2020MD-6 (SOT1220), 2.0 × 2.0 × 0.65 mm, leadless ultra-thin SMD with exposed drain pad for thermal conduction and tin-plated side pads for optical solder inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6, 7 | Drain (D) | Five parallel drain connections - reduce current density and enhance thermal spreading across the exposed pad |
| 3 | Gate (G) | Single control terminal - accepts negative gate-source voltage to turn on; compatible with standard level-shifting drivers |
| 4, 8 | Source (S) | Two source terminals - provide low-inductance return path and improve current sharing in high-frequency switching |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOSFET architecture | Enables 15 mΩ RDS(on) in 2×2 mm footprint - reduces board area and conduction losses vs. planar alternatives |
| Exposed drain pad | Reduces Rth(j-a) to 67–74 K/W - improves thermal reliability in sealed portable enclosures without heatsinks |
| 1.5 kV HBM ESD rating | Eliminates need for external ESD protection in charging switch applications - lowers BOM count and layout complexity |
| Optical solder inspection pads | Tin-plated side terminals allow automated AOI verification - increases manufacturing yield in high-volume portable production |
| Ultra-thin 0.65 mm profile | Meets Z-height constraints in slim smartphones and wearables - enables stacking with batteries or displays |
Applications
| Charging Switch | DC-DC Converter High-Side Switch |
|---|---|
|
Use Scenario: Reverse-polarity protected USB/adapter input path in smartphones and tablets, enabling battery charging while isolating faulty sources. IC Role / Device Role / Timing Role: P-channel high-side load switch controlling power entry - operates in linear or saturated mode depending on gate drive. Use Value: Low RDS(on) minimizes voltage drop and heat generation during 2–3 A charging currents, extending battery life and reducing thermal throttling. |
Use Scenario: Synchronous buck converter upper switch in portable SSDs or IoT edge nodes requiring 3.3 V or 5 V regulation from Li-ion battery. IC Role / Device Role / Timing Role: High-side power switch in non-isolated step-down topology - driven by dedicated gate driver or integrated controller. Use Value: Fast switching (td(on) = 18 ns, tf = 57 ns) and low QG reduce switching losses at 500 kHz–1 MHz frequencies, improving light-load efficiency. |
| Battery Power Management | Hard Disk Drive Power Control |
|
Use Scenario: System power rail enable/disable in Bluetooth headsets and wireless earbuds, managing sleep/wake transitions and leakage current. IC Role / Device Role / Timing Role: Low-quiescent-current power switch - biased in cutoff or saturation, not linear region, for minimal standby loss. Use Value: Sub-µA gate leakage and <1 µA drain leakage at 12 V ensure <1 µW control power - extends shelf life and runtime between charges. |
Use Scenario: Spin-up and spin-down sequencing for 2.5″ HDDs in ultrabooks, isolating drive power until host controller signals readiness. IC Role / Device Role / Timing Role: Inrush current-limited power switch - used with RC gate network to control dV/dt and prevent supply sag. Use Value: Robust 33 A peak drain current (IDM) handles HDD motor surge without derating - eliminates need for larger, costlier FETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2053LFG-7 | −20 V VDS, 22 mΩ RDS(on) @ −4.5 V, same DFN2020-6 package but no exposed drain pad | Higher voltage margin but higher on-resistance and inferior thermal performance - suitable only if 12 V system margin is insufficient | Select only when extended overvoltage tolerance is required; avoid if thermal or efficiency is prioritized. |
| Si2301DDS-T1-GE3 | −20 V VDS, 115 mΩ RDS(on) @ −4.5 V, SOT-23 package, no thermal pad | Lower cost but 7.7× higher RDS(on) and limited current (<3.3 A) - viable only for sub-500 mA loads with relaxed thermal constraints | Choose for ultra-low-cost, low-current bias rails; reject for any >1 A switching application due to excessive self-heating. |
Compared with DMN2053LFG-7 and Si2301DDS-T1-GE3, PMPB15XPH uniquely balances −12 V rating, 15 mΩ on-resistance, and DFN2020MD-6 thermal performance - making it optimal for space- and efficiency-critical 1–3 A portable power switches where thermal headroom is constrained.
Availability
PMPB15XPH is available at Aetrix Electronics and suitable for portable device charging switches, DC-DC converter high-side switches, and battery power management circuits requiring stable component supply, consistent parametric performance, and long-term industrial availability.
Supply support for PMPB15XPH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.
PMPB15XPH belongs to NXP's TrenchMOS portfolio - engineered specifically for high-efficiency, low-voltage power switching in portable and battery-operated electronics where miniaturization and thermal performance are critical.
FAQ
What is the maximum continuous drain current for PMPB15XPH at 100 °C ambient temperature?
The maximum continuous drain current is −5.2 A at Tamb = 100 °C and VGS = −4.5 V, as specified in Table 5 (Limiting values). This derating reflects thermal limits of the DFN2020MD-6 package on standard FR4 PCB with 6 cm² drain pad - actual current depends on board layout and airflow.
Does PMPB15XPH require a gate resistor for safe operation in switching applications?
A gate resistor is recommended to control dV/dt and suppress ringing, especially at high switching frequencies. Typical values range from 2.2 Ω to 10 Ω depending on driver strength and layout parasitics; the datasheet specifies td(on), tf, and QG using RG(ext) = 6 Ω, confirming this value as a validated reference point.
Can PMPB15XPH be used in avalanche conditions?
No - the datasheet does not specify avalanche energy rating (EAS) or ruggedness testing. It is designed for clamped inductive switching only, with safe operating area (SOA) defined up to 100 µs pulses. Operation beyond SOA limits risks permanent failure.
Is the marking code "1A" on PMPB15XPH traceable to date code or lot information?
Per Table 4, "1A" is the device-specific marking code for PMPB15XP variants and does not encode date or lot data. Full traceability requires the full top-side marking plus reel label information per NXP's packaging standards - contact Aetrix for batch-level documentation upon order.
PMPB15XPH Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 8.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2875 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.7W (Ta), 12.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN2020MD-6
PMPB15XPH FAQ
1.How can I place an order for PMPB15XPH through Aetrix?
Please submit a Request for Quotation (RFQ) for PMPB15XPH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMPB15XPH reliable?
The price and inventory of PMPB15XPH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB15XPH is usually 5 days.
3.What payment methods are accepted for PMPB15XPH?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB15XPH transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMPB15XPH?
PMPB15XPH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMPB15XPH order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMPB15XPH?
For technical support, including PMPB15XPH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB15XPH requirements.
6.How does Aetrix verify that PMPB15XPH is sourced from the original manufacturer or authorized distributors?
All PMPB15XPH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB15XPH meets industry standards.
7.What is the process for return or replacement of PMPB15XPH?
All PMPB15XPH units undergo pre-shipment inspection (PSI). If there is an issue with PMPB15XPH, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMPB15XPH part is unused and in its original packaging.
Return procedure for PMPB15XPH:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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