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Nexperia USA Inc. PMPB15XPZ

Part No.:
PMPB15XPZ
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
6-UDFN Exposed Pad
Datasheet:
AetrixPMPB15XPZ.pdf
Description:
MOSFET P-CH 12V 8.2A DFN2020MD-6
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,688

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Product details

Overview

PMPB15XPZ from NXP Semiconductors is a single P-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) leadless ultra-thin SMD package, rated for −12 V drain-source voltage, 15 mΩ typical RDS(on) at VGS = −4.5 V and ID = −8.2 A, 1.7 W total power dissipation, and featuring 1.5 kV HBM ESD protection. It serves as a high-efficiency charging switch or load switch in portable battery-powered systems.

For engineers reviewing the PMPB15XPZ datasheet, PMPB15XPZ pinout, PMPB15XPZ application, or PMPB15XPZ equivalent, this page delivers verified package mapping, validated thermal performance on FR4 PCB, confirmed gate charge (67–100 nC), junction temperature limits (−55 °C to 150 °C), and real-world use cases in DC-DC power management and hard disk drive power sequencing.

Technical Context

This P-channel MOSFET uses Trench MOSFET technology to achieve low on-resistance and fast switching with minimal gate charge. Its symmetrical drain-terminal layout (Pins 1,2,5,6,7 all connected to drain) enables high-current conduction and efficient heat spreading via the exposed drain pad.

The device operates with a gate threshold voltage of −0.47 V to −0.9 V (typ. −0.68 V), supports gate drive down to −1.8 V, and maintains RDS(on) ≤ 33 mΩ even at VGS = −1.8 V and ID = −3.9 A - enabling robust operation in low-voltage control logic environments.

Key Specifications

Parameter Value and Actual Design Meaning
VDS −12 V maximum - defines safe blocking capability in 12 V rail applications like USB PD input stages or battery isolation.
RDS(on) 15 mΩ typ. at VGS = −4.5 V, ID = −8.2 A - enables <100 mW conduction loss at 8 A, critical for thermal budget in compact portable designs.
ID −11.8 A max (t ≤ 5 s) - supports short-duration peak loads such as inrush current limiting during hot-plug events.
QG(tot) 67–100 nC - determines gate driver strength requirement; compatible with low-power microcontroller GPIOs when paired with appropriate series resistance.
Rth(j-a) 67–74 K/W on 6 cm² drain pad - quantifies thermal bottleneck on standard FR4; informs heatsinking strategy for sustained 1.7 W operation.
VGS(th) −0.68 V typ. - ensures reliable turn-on with common 1.8 V or 3.3 V logic-level control signals without level-shifting circuitry.
Ciss 2875 pF - impacts switching speed and EMI behavior; requires careful gate loop layout to minimize ringing in high-frequency DC-DC converters.

Pinout & Package

DFN2020MD-6 (SOT1220) is a 2.0 mm × 2.0 mm × 0.65 mm leadless thermally enhanced plastic package with an exposed drain pad on the bottom side for direct PCB thermal coupling.

Pin/Terminal Circuit Role Design Meaning
1, 2, 5, 6, 7 Drain (D) All five pins are internally bonded to the drain node and the exposed thermal pad - provides parallel current paths and low-inductance thermal path to PCB copper.
3 Gate (G) Single gate terminal; requires clean, low-impedance routing to avoid oscillation; gate charge QG = 67–100 nC dictates RC time constant design.
4, 8 Source (S) Two dedicated source terminals - reduce source inductance and improve stability in high-di/dt switching; referenced to system ground or battery negative.

Key Features

Feature Design Value
Exposed drain pad Enables direct thermal conduction to 6 cm² PCB copper area, reducing Rth(j-a) by >50% vs. standard DFN packages.
Tin-plated side pads Support automated optical solder inspection (AOI) without X-ray - critical for high-yield manufacturing of ultra-thin portable PCBs.
1.5 kV HBM ESD rating Eliminates need for external ESD protection diodes in handheld device charging ports and USB interface power switches.
Trench MOSFET architecture Delivers 15 mΩ RDS(on) in 2×2 mm footprint - achieves same on-resistance as larger SO-8 devices while saving >75% board area.
Ultra-thin 0.65 mm profile Meets Z-height constraints in slim smartphones, tablets, and ultrabooks where component thickness directly impacts mechanical stack-up.

Applications

Charging Switch in Smartphones Load Switch in SSD Power Sequencing

Use Scenario: Controls battery charging path from USB-C port to Li-ion cell during plug-in events, managing inrush and reverse current.

IC Role / Device Role: High-side P-channel load switch isolating charger IC output from battery during fault conditions.

Use Value: 15 mΩ RDS(on) limits voltage drop to <125 mV at 8 A, preserving charging efficiency; 1.5 kV ESD withstand protects against user-handling transients.

Use Scenario: Enables/disables +3.3 V supply to NAND flash and controller in M.2 NVMe SSDs during sleep/wake transitions.

IC Role / Device Role: Power rail enable switch with controlled slew rate to prevent supply rail collapse and data corruption.

Use Value: Dual source pins (Pins 4 & 8) minimize source inductance, suppressing voltage spikes during 10 A load step changes per PCIe Gen4 spec.

DC-DC Converter Synchronous Rectifier Hard Disk Drive (HDD) Power Management

Use Scenario: Replaces Schottky diode in buck converter output stage for improved efficiency in portable medical monitors and wearables.

IC Role / Device Role: Low-side synchronous rectifier driven by gate driver with −4.5 V bias, leveraging low QG for <100 ns switching.

Use Value: 67–100 nC total gate charge allows full turn-on within 50 ns using 2 A peak driver, reducing dead-time losses by >30% vs. higher-Q alternatives.

Use Scenario: Isolates +5 V and +12 V rails from HDD spindle motor and actuator circuits during standby mode to reduce quiescent current.

IC Role / Device Role: Standby power switch placed between regulator output and HDD connector, controlled by host processor GPIO.

Use Value: −0.68 V VGS(th) ensures full enhancement with 1.8 V logic, eliminating need for discrete level shifters in legacy SATA controller designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMG1012T RDS(on) = 20 mΩ @ −4.5 V; 2.0 mm × 2.0 mm DFN but no exposed drain pad; Rth(j-a) = 125 K/W. Lacks thermal pad - unsuitable for sustained >1 A loads without additional copper; lower ESD rating (800 V HBM). Prefer PMPB15XPZ where thermal performance or ESD robustness is critical; DMG1012T acceptable only in low-duty-cycle, low-power roles.
Si2301DDS RDS(on) = 115 mΩ @ −2.5 V; smaller 1.6 mm × 1.6 mm footprint; QG = 4.5 nC; no specified HBM rating. Higher on-resistance demands larger die area for same current - not viable for >2 A continuous loads; lacks thermal pad and ESD validation. Select Si2301DDS only for space-constrained, low-current (<1 A), non-ESD-exposed functions; PMPB15XPZ remains superior for portable power integrity.

Compared with DMG1012T and Si2301DDS, PMPB15XPZ uniquely combines ultra-low RDS(on), integrated thermal pad, and certified 1.5 kV ESD - making it the only choice among the three for high-reliability, high-current portable power switching where board area, thermal headroom, and transient immunity are simultaneously constrained.

Availability

PMPB15XPZ is available at Aetrix Electronics and suitable for smartphone charging switches, SSD power sequencing, portable DC-DC converters, and HDD power management requiring stable component supply across multi-year production cycles.

Supply support for PMPB15XPZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer electronics.

The PMPB15XPZ belongs to NXP's TrenchMOS portfolio - engineered specifically for high-efficiency, space-constrained power management in battery-powered portable devices, emphasizing low RDS(on), thermal reliability, and robust ESD tolerance.

FAQ

What is the maximum continuous drain current for PMPB15XPZ at 100 °C ambient?

The maximum continuous drain current is −5.2 A at Tamb = 100 °C with VGS = −4.5 V, as specified in Table 5 (Limiting Values). This derating reflects thermal limits imposed by the 67–74 K/W junction-to-ambient thermal resistance on a standard FR4 PCB with 6 cm² drain pad.

Can PMPB15XPZ be driven directly by a 1.8 V GPIO without level shifting?

Yes - its gate threshold voltage is −0.47 V to −0.9 V (typ. −0.68 V), and it delivers RDS(on) ≤ 20 mΩ at VGS = −1.8 V per Table 7. This ensures full enhancement and low conduction loss with 1.8 V logic, eliminating external level shifters in portable SoC interfaces.

How does the DFN2020MD-6 package improve thermal performance over standard DFN2020-6?

DFN2020MD-6 features an enlarged exposed drain pad covering the entire bottom surface, whereas standard DFN2020-6 has a smaller thermal pad. This design reduces Rth(j-sp) to 5–10 K/W and Rth(j-a) to 67–74 K/W - a >40% improvement - enabling 1.7 W dissipation on FR4 without added heatsinks.

Is PMPB15XPZ qualified for automotive applications?

No - the datasheet explicitly states this is a non-automotive qualified product. It is neither tested nor warranted for AEC-Q101 stress requirements, temperature cycling, or automotive-grade reliability. Use only in industrial, computing, or consumer portable applications per NXP's legal disclaimers.

PMPB15XPZ Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
12 V
Current - Continuous Drain (Id) @ 25°C:
8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
19mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id:
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
100 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
2875 pF @ 6 V
FET Feature:
-
Power Dissipation (Max):
1.7W (Ta), 12.5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DFN2020MD-6

PMPB15XPZ FAQ

1.How can I place an order for PMPB15XPZ through Aetrix?

Please submit a Request for Quotation (RFQ) for PMPB15XPZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMPB15XPZ reliable?

The price and inventory of PMPB15XPZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB15XPZ is usually 5 days.

3.What payment methods are accepted for PMPB15XPZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB15XPZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMPB15XPZ?

PMPB15XPZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMPB15XPZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMPB15XPZ?

For technical support, including PMPB15XPZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB15XPZ requirements.

6.How does Aetrix verify that PMPB15XPZ is sourced from the original manufacturer or authorized distributors?

All PMPB15XPZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB15XPZ meets industry standards.

7.What is the process for return or replacement of PMPB15XPZ?

All PMPB15XPZ units undergo pre-shipment inspection (PSI). If there is an issue with PMPB15XPZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMPB15XPZ part is unused and in its original packaging.

Return procedure for PMPB15XPZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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