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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMPB16EPX

Name: PMPB16EPX
Brand: Nexperia USA Inc.
SKU: PMPB16EPX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMPB16EPX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: PMPB16EPX.pdf

Description:: MOSFET P-CH 30V 7.5A DFN2020MD-6

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PMPB16EPX from Nexperia is a 30 V, P-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) leadless ultra-thin SMD package. It delivers 16 mΩ R_DS(on) at V_GS = −10 V and I_D = −7.5 A (T_j = 25 °C), supports logic-level gate drive down to −4.5 V, and features side-wettable flanks for automated optical solder inspection-used as a high-efficiency charging switch in portable USB-C power delivery circuits.

For engineers reviewing the PMPB16EPX datasheet, PMPB16EPX pinout, PMPB16EPX application, or PMPB16EPX equivalent, key selection criteria include its low R_DS(on) at −4.5 V gate drive, thermal performance on FR4 with 6 cm² drain pad (R_th(j-sp) = 5–10 K/W), and suitability for compact battery management systems requiring <2 mm × 2 mm footprint and <0.65 mm height.

Technical Context

This device uses Trench MOSFET technology to achieve enhanced conduction efficiency and reduced gate charge (Q_G(tot) = 29–44 nC). Its symmetrical drain-terminal layout (pins 1, 2, 5, 6, 7) enables high-current routing and improved thermal spreading across the exposed drain pad.

The gate threshold voltage (V_GS(th) = −1.0 to −2.5 V) ensures reliable turn-on with standard logic-level controllers, while the source-drain diode (V_SD = −0.8 to −1.2 V at I_S = −1.9 A) supports synchronous rectification in DC-DC buck converters without external Schottky diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−30 V - Maximum blocking voltage for 2-cell Li-ion battery systems (8.4 V nominal) with 3.5× safety margin.
R_DS(on)	16 mΩ (typ) at V_GS = −10 V - Enables ≤120 mW conduction loss at 7.5 A continuous current on standard FR4 PCB.
I_D (cont)	−7.5 A at T_amb = 25 °C - Sustained current capability with 6 cm² drain copper pad per datasheet test condition.
Q_G(tot)	29–44 nC - Low total gate charge reduces switching losses in 500 kHz–1 MHz DC-DC converters.
R_th(j-sp)	5–10 K/W - Junction-to-solder-point thermal resistance enables direct thermal coupling to PCB ground plane for thermal reliability.
V_GS(th)	−1.5 V (typ) - Ensures full enhancement with 3.3 V microcontroller GPIOs driving gate through simple level-shifter or direct connection.

Pinout & Package

DFN2020MD-6 (SOT1220) is a 2.0 mm × 2.0 mm × 0.65 mm leadless, thermally enhanced plastic package with side-wettable flanks and an exposed drain pad occupying >70% of bottom surface area.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6, 7	Drain (D)	Five parallel drain terminals connected to internal die drain metallization and exposed bottom pad-optimized for high-current conduction and PCB heat sinking.
3	Gate (G)	Single gate input terminal; requires <10 Ω series resistance for EMI control and ringing suppression during fast switching.
4, 8	Source (S)	Two dedicated source terminals providing low-inductance return path for load current and gate drive loop closure.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Full enhancement at V_GS = −4.5 V enables direct interface with 5 V/3.3 V MCUs without gate driver ICs.
Side-wettable flanks	Vertical sidewall plating allows AOI (automated optical inspection) of solder joint quality on all six terminals-critical for high-reliability portable manufacturing.
Ultra-thin profile	0.65 mm max height permits integration into space-constrained stacked PCB assemblies and slim consumer enclosures.
Exposed drain pad	Thermal resistance to PCB solder point as low as 5 K/W improves power dissipation by >60% vs. standard SO-8 MOSFETs on identical FR4 layout.

Applications

USB-C Charging Switch

Battery Protection Circuit

Use Scenario: Bidirectional power path control between USB-C port and single-cell Li-ion battery in smartphones and tablets.

IC Role / Device Role / Timing Role: High-side P-channel load switch enabling reverse-current blocking and hot-plug sequencing during adapter insertion.

Use Value: 16 mΩ R_DS(on) limits voltage drop to <120 mV at 7.5 A, preserving system efficiency while supporting USB PD 3.0 27 W profiles.

Use Scenario: Overcurrent and short-circuit protection in battery packs using discrete FET-based protection ICs (e.g., DW01A + dual-MOSFET configuration).

IC Role / Device Role / Timing Role: Discrete P-channel discharge switch placed between battery cathode and load, controlled by protection IC's DO pin.

Use Value: Low V_GS(th) ensures reliable turn-off when protection IC pulls gate high, preventing false triggering during transient load surges.

DC-DC Buck Converter High-Side Switch

Portable Device Power Rail Sequencing

Use Scenario: High-side synchronous rectifier in 3.3 V/1.8 V buck converters powering SoCs in wearables and Bluetooth earbuds.

IC Role / Device Role / Timing Role: Complementary P-channel switch paired with N-channel low-side FET to replace body diode conduction and reduce switching losses.

Use Value: Q_GD = 6.2 nC minimizes Miller plateau duration, enabling clean 1 MHz switching with <25 ns fall time and <60 ns turn-off delay.

Use Scenario: Controlled power-up sequencing of multiple voltage rails (e.g., VDDIO, VDDCORE, VDDA) in ARM Cortex-M based IoT edge nodes.

IC Role / Device Role / Timing Role: Standalone P-channel enable switch driven by sequencer output or reset controller to gate power to downstream LDOs or PMIC inputs.

Use Value: Side-wettable flanks ensure zero-defect solder joints critical for field-reliable sequencing-no hidden voids under non-inspectable leads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG1016LSD-7	R_DS(on) = 18 mΩ @ −4.5 V (vs. 22–29 mΩ for PMPB16EPX); slightly higher Q_G (36 nC).	Same DFN2020-6 footprint but lacks side-wettable flanks-unsuitable for AOI-dependent production lines.	Select when AOI is not required and lower gate charge tolerance is acceptable.
SI2301DDS-T1-BE3	R_DS(on) = 115 mΩ @ −4.5 V; significantly higher on-resistance and larger SOT-23 package (3.0 mm × 1.4 mm).	Higher thermal resistance (R_th(j-a) ≈ 200 K/W) limits continuous current to ~2.5 A on FR4-unsuitable for >5 A loads.	Select only for cost-sensitive, low-current (<2 A), non-AOI applications where board space is less constrained.

Compared with DMG1016LSD-7 and SI2301DDS-T1-BE3, PMPB16EPX uniquely combines sub-20 mΩ R_DS(on) at −4.5 V, side-wettable flanks for process traceability, and 0.65 mm profile-making it optimal for high-density, high-reliability portable power switches where thermal headroom and manufacturing yield are critical.

Availability

PMPB16EPX is available at Aetrix Electronics and suitable for USB-C charging switches, battery protection circuits, and DC-DC converter high-side switches requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support for portable electronics programs.

Supply support for PMPB16EPX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with core competencies in automotive-grade and industrial MOSFETs, ESD protection, and logic solutions.

PMPB16EPX belongs to Nexperia's TrenchMOS® portfolio-engineered specifically for space-constrained, thermally demanding portable power applications requiring logic-level drive, ultra-low R_DS(on), and AOI-compatible packaging.

FAQ

What is the maximum continuous drain current for PMPB16EPX at 100 °C ambient temperature?

The maximum continuous drain current is −4.7 A at T_amb = 100 °C with the device mounted on an FR4 PCB featuring a 6 cm² tin-plated drain pad. This derating reflects thermal limitations-not electrical failure-and aligns with the normalized current curve in Figure 2 of the datasheet.

Does PMPB16EPX require a gate resistor for typical 3.3 V MCU drive?

Yes-a 10 Ω series gate resistor is recommended to dampen ringing caused by parasitic inductance in the gate loop. The device's 8.7 Ω intrinsic gate resistance and 29–44 nC total gate charge make it susceptible to oscillation without proper gate control, especially at switching frequencies above 500 kHz.

Can PMPB16EPX be used in automotive applications?

No-PMPB16EPX is not AEC-Q101 qualified and is explicitly designated for consumer and industrial portable electronics. Nexperia's datasheet states it is "non-automotive qualified" and unsuitable for safety-critical or life-support systems due to lack of extended temperature validation and qualification testing.

How does the side-wettable flank design impact reflow soldering yield?

The side-wettable flanks enable automated optical inspection of solder fillet formation on all six terminals-including the drain pins-without X-ray. This increases first-pass yield by detecting insufficient solder, bridging, or misalignment early in SMT line, reducing rework rates in high-volume portable assembly.

PMPB16EPX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 7.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1418 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 12.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DFN2020MD-6

PMPB16EPX FAQ

1.How can I place an order for PMPB16EPX through Aetrix?

Please submit a Request for Quotation (RFQ) for PMPB16EPX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMPB16EPX reliable?

The price and inventory of PMPB16EPX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB16EPX is usually 5 days.

3.What payment methods are accepted for PMPB16EPX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB16EPX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMPB16EPX?

PMPB16EPX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMPB16EPX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMPB16EPX?

For technical support, including PMPB16EPX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB16EPX requirements.

6.How does Aetrix verify that PMPB16EPX is sourced from the original manufacturer or authorized distributors?

All PMPB16EPX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB16EPX meets industry standards.

7.What is the process for return or replacement of PMPB16EPX?

All PMPB16EPX units undergo pre-shipment inspection (PSI). If there is an issue with PMPB16EPX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMPB16EPX part is unused and in its original packaging.

Return procedure for PMPB16EPX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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