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Nexperia USA Inc. PMPB19XP,115

Part No.:
PMPB19XP,115
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
6-UDFN Exposed Pad
Datasheet:
AetrixPMPB19XP,115.pdf
Description:
MOSFET P-CH 20V 7.2A DFN2020MD-6
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,402

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Product details

Overview

PMPB19XP from Nexperia is a single P-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) package, rated for −20 V drain-source voltage, 19 mΩ typical RDS(on) at VGS = −4.5 V and ID = −7.2 A, and −10.3 A continuous drain current at Tamb = 25 °C. It serves as a high-efficiency charging switch or power rail control device in compact battery-powered systems.

For engineers reviewing the PMPB19XP datasheet, PMPB19XP pinout, PMPB19XP application, or PMPB19XP equivalent, this device is selected for low-voltage portable power management where ultra-thin SMD footprint, thermal performance via exposed drain pad, and verified sub-1 VGS(th) threshold are critical design requirements.

Technical Context

This P-channel MOSFET uses Trench technology to achieve low on-resistance and fast switching with gate charge QG(tot) of 28.8–43.2 nC and turn-on delay td(on) of 16 ns. Its gate-source threshold voltage ranges from −0.47 V to −0.9 V at Tj = 25 °C, enabling reliable turn-on with low-voltage logic-level drive.

The device features an integrated source-drain diode with VSD = −0.6 to −1.2 V at IS = −1.9 A and exhibits normalized RDS(on) drift of ≤1.75× from −60 °C to 150 °C. Thermal resistance from junction to solder point is 5–10 K/W, confirming suitability for PCB-constrained thermal designs.

Key Specifications

Parameter Value and Actual Design Meaning
VDS −20 V maximum - supports full operation across 3.3 V to 12 V battery rails without breakdown risk
RDS(on) 19 mΩ typical at VGS = −4.5 V, ID = −7.2 A, Tj = 25 °C - enables <150 mW conduction loss at 7 A
ID (cont) −7.2 A at Tamb = 25 °C - validated for sustained load switching in DC-DC output stages
VGS(th) −0.68 V typical - ensures robust turn-on with 1.8 V or 2.5 V GPIO control without level-shifting
QG(tot) 28.8–43.2 nC - balances switching speed and gate driver loading in high-frequency (>1 MHz) buck controllers
Rth(j-sp) 5–10 K/W - allows direct thermal coupling to PCB copper, supporting >1.5 W dissipation with minimal heatsinking
Ciss 2890 pF - defines input capacitance seen by gate driver; impacts rise/fall time under 6 Ω external gate resistance

Pinout & Package

DFN2020MD-6 (SOT1220) is a 2.0 × 2.0 × 0.65 mm leadless ultra-thin plastic package with exposed drain pad for thermal conduction and tin-plated side terminals for optical solder inspection.

Pin/Terminal Circuit Role Design Meaning
1, 2, 5, 6, 7 Drain (D) Five parallel drain terminals connected to internal die and exposed thermal pad - primary current path and thermal interface
3 Gate (G) Single gate input terminal - requires ESD-safe handling and controlled slew rate to avoid oscillation
4, 8 Source (S) Two source terminals tied to internal source metallization - forms return path for load current and reference for gate drive

Key Features

Feature Design Value
Trench MOSFET architecture Enables 19 mΩ RDS(on) in 2 mm² footprint - reduces board area vs. SO-8 or TSOP6 alternatives
Exposed drain pad Reduces Rth(j-sp) to 5–10 K/W - improves thermal margin in sealed portable enclosures
Tin-plated side pads Supports automated optical inspection (AOI) of solder joints - increases manufacturing yield in high-volume assembly
Ultra-thin 0.65 mm profile Enables stacking in space-constrained modules (e.g., USB-C PD adapters, wearable battery packs)

Applications

Charging Switch DC-DC Converter High-Side Switch

Use Scenario: Reverse-polarity protection and charge path enable/disable in USB-powered portable devices.

IC Role / Device Role / Timing Role: P-channel high-side load switch controlling battery charge current flow from USB VBUS to Li-ion cell.

Use Value: Sub-1 VGS(th) ensures full enhancement with 3.3 V system rail; 19 mΩ RDS(on) limits voltage drop to <150 mV at 7.2 A.

Use Scenario: Synchronous rectification or high-side switching in buck converter output stage.

IC Role / Device Role / Timing Role: Power FET in non-isolated step-down regulator delivering up to 7 A to SoC or PMIC rails.

Use Value: 43.2 nC max QG(tot) supports efficient 1–2 MHz switching; low Coss (250 pF) minimizes dead-time losses.

Battery Management System Hard Disk Drive Power Control

Use Scenario: Isolation of auxiliary rails (e.g., display backlight, sensor array) during deep sleep mode.

IC Role / Device Role / Timing Role: Low-leakage power gating switch with IDSS ≤ −1 µA at −20 V, reducing standby current.

Use Value: Gate leakage <100 nA at −12 V ensures stable off-state over temperature; 150 °C Tj(max) supports industrial ambient.

Use Scenario: Controlled power-up sequencing and fault isolation for 2.5″ HDD spindle motor and controller ICs.

IC Role / Device Role / Timing Role: Hard-switched power rail controller activated only after system reset and voltage stabilization.

Use Value: −30 A peak drain current (tp ≤ 10 µs) withstands HDD inrush; 1.7 W Ptot supports brief surge loads without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMG2305UVT-7 RDS(on) = 42 mΩ @ VGS = −4.5 V; smaller 1.6 × 1.6 mm package; higher VGS(th) (−1.0 to −2.5 V) Lower current capability (−4.2 A); suited for <3 A loads where size is more critical than conduction loss Select when board area is constrained below 3.2 mm² and load current remains ≤4 A
SI2301DDS-T1-BE3 RDS(on) = 115 mΩ @ VGS = −4.5 V; same SOT-23 footprint; lower cost; no exposed drain pad Higher conduction loss (>800 mW at 7 A); limited thermal capacity (Rth(j-a) ≈ 200 K/W) Select for cost-sensitive, low-power (<1 A), non-thermal-critical applications where legacy SOT-23 layout reuse is required

Compared with DMG2305UVT-7 and SI2301DDS-T1-BE3, PMPB19XP delivers 2.2× lower RDS(on) than the former and 6× lower than the latter while maintaining thermal reliability via its exposed drain pad - making it optimal for 5–10 A portable power switches where efficiency and thermal headroom are prioritized.

Availability

PMPB19XP is available at Aetrix Electronics and suitable for charging switches in portable devices, DC-to-DC converters, and battery-driven power management systems requiring stable component supply and long-term manufacturability.

Supply support for PMPB19XP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.

PMPB19XP belongs to Nexperia's TrenchMOS portfolio designed specifically for space- and thermally-constrained portable power applications, emphasizing low RDS(on), thin-profile packaging, and logic-level gate drive compatibility.

FAQ

What is the maximum continuous drain current for PMPB19XP at 100 °C ambient temperature?

The maximum continuous drain current for PMPB19XP is −4.5 A at Tamb = 100 °C, as specified in Table 5 (Limiting values). This derating reflects thermal constraints of the DFN2020MD-6 package on standard FR4 PCB with 6 cm² drain pad, ensuring safe operation within its 150 °C junction limit.

Does PMPB19XP require a gate resistor for stability in switching applications?

Yes - a gate resistor (typically 1–10 Ω) is recommended to dampen ringing caused by gate loop inductance and the device's 2890 pF Ciss. The datasheet specifies switching times (e.g., tr = 54 ns, tf = 36 ns) using RG(ext) = 6 Ω, confirming that external gate resistance directly controls edge rates and EMI.

Can PMPB19XP be used in automotive applications?

No - PMPB19XP is not automotive-qualified. The datasheet explicitly states "Non-automotive qualified products" in Section 12.3 and does not list AEC-Q101 qualification. Its guaranteed operating range (−55 °C to 150 °C) supports industrial use but lacks automotive-specific stress testing, failure analysis, and PPAP documentation.

How is thermal performance affected if the PCB drain pad is reduced below 6 cm²?

Reducing the drain pad below 6 cm² significantly degrades thermal performance: Rth(j-a) increases from 67–74 K/W (6 cm²) to 235–270 K/W (standard footprint), lowering maximum allowable power dissipation from 1.7 W to ~0.3 W at 25 °C ambient. This necessitates strict current derating or active cooling in compact layouts.

PMPB19XP,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
22.5mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id:
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
43.2 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
2890 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1.7W (Ta), 12.5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DFN2020MD-6

PMPB19XP,115 FAQ

1.How can I place an order for PMPB19XP,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PMPB19XP,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMPB19XP,115 reliable?

The price and inventory of PMPB19XP,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB19XP,115 is usually 5 days.

3.What payment methods are accepted for PMPB19XP,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB19XP,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMPB19XP,115?

PMPB19XP,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMPB19XP,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMPB19XP,115?

For technical support, including PMPB19XP,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB19XP,115 requirements.

6.How does Aetrix verify that PMPB19XP,115 is sourced from the original manufacturer or authorized distributors?

All PMPB19XP,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB19XP,115 meets industry standards.

7.What is the process for return or replacement of PMPB19XP,115?

All PMPB19XP,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMPB19XP,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMPB19XP,115 part is unused and in its original packaging.

Return procedure for PMPB19XP,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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