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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMPB20EN,115

Name: PMPB20EN,115
Brand: Nexperia USA Inc.
SKU: PMPB20EN,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMPB20EN,115

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: PMPB20EN,115.pdf

Description:: MOSFET N-CH 30V 7.2A DFN2020MD-6

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Product details

Overview

PMPB20EN from Nexperia is a 30 V, N-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) leadless SMD package, designed for high-efficiency power switching in space-constrained portable electronics. It delivers R_DS(on) = 16.5 mΩ at V_GS = 10 V and I_D = 7 A (T_j = 25 °C), supports 10.4 A continuous drain current, and features an exposed drain pad for enhanced thermal conduction in battery-powered DC-DC converters and charging switches.

For engineers reviewing the PMPB20EN datasheet, PMPB20EN pinout, PMPB20EN application, or PMPB20EN equivalent, key selection criteria include its ultra-thin 2 × 2 × 0.65 mm footprint, low gate charge (Q_G(tot) = 7.2–10.8 nC), fast switching (t_r = 17 ns), and thermal resistance R_th(j-sp) = 5–10 K/W - critical for thermally dense portable power management designs.

Technical Context

This MOSFET employs Trench MOSFET technology to achieve low on-resistance and fast switching with minimal gate drive requirements. Its gate threshold voltage (V_GS(th)) ranges from 1.0 to 2.0 V at T_j = 25 °C, enabling compatibility with 3.3 V and 4.5 V logic-level control in portable systems.

The device integrates six terminals in a symmetrical DFN2020MD-6 layout: five drain connections (Pins 1, 2, 5, 6, 7) and dual source connections (Pins 4, 8), with Pin 3 dedicated to the gate. The exposed drain pad serves as both primary current path and thermal interface, requiring proper PCB copper area (6 cm²) for rated power dissipation (3.5 W at T_amb = 25 °C, t ≤ 5 s).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum drain-source voltage - defines safe blocking capability in 12–24 V rail applications.
R_DS(on)	16.5–19.5 mΩ at V_GS = 10 V, I_D = 7 A, T_j = 25 °C - enables <100 mW conduction loss at 7 A, critical for efficiency in portable power stages.
I_D (continuous)	10.4 A at V_GS = 10 V, T_amb = 25 °C, t ≤ 5 s - supports peak load handling in USB PD and battery protection circuits.
Q_G(tot)	7.2–10.8 nC - determines gate driver strength requirement and switching energy loss in high-frequency DC-DC topologies.
t_r/t_f	Rise time 17 ns, fall time 8 ns (V_DS = 15 V, I_D = 5 A, R_G(ext) = 1.7 Ω) - enables >1 MHz operation with low switching loss.
R_th(j-sp)	5–10 K/W - quantifies thermal coupling from junction to solder point, guiding PCB thermal pad design for reliability under sustained load.

Pinout & Package

Package: DFN2020MD-6 (SOT1220), 2.0 × 2.0 × 0.65 mm, leadless, ultra-thin, with exposed drain pad for thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6, 7	Drain (D)	Five parallel drain terminals connected to the exposed bottom pad - provide low-inductance, high-current path and primary thermal conduction route to PCB.
3	Gate (G)	Single gate input with 1.7 Ω typical gate resistance - interfaces directly with 3.3 V/4.5 V microcontrollers or gate drivers without level shifting.
4, 8	Source (S)	Dual source terminals - reduce source inductance and improve stability in high-di/dt switching; referenced to system ground in low-side configurations.

Key Features

Feature	Design Value
Trench MOSFET architecture	Enables 16.5 mΩ R_DS(on) in 2 × 2 mm footprint - reduces board area and conduction loss vs. planar alternatives.
Exposed drain pad	Reduces R_th(j-a) to 33–36 K/W with 6 cm² copper - allows 3.5 W power dissipation without heatsink in handheld devices.
Tin-plated side pads	Enables optical solder inspection and reliable reflow joint formation - improves manufacturing yield in high-volume portable assembly.
Low Q_GD/Q_GS ratio	0.67 nC gate-drain charge vs. 1 nC gate-source charge - enhances hard-switching robustness and reduces Miller-induced shoot-through risk.

Applications

Charging Switch for Smartphones

Step-Down DC-DC Converter

Use Scenario: Bidirectional USB-C power path control between battery and Type-C port in smartphones and tablets.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500 kHz–2 MHz, controlled by PMIC's gate driver.

Use Value: 16.5 mΩ R_DS(on) minimizes voltage drop and heat generation during 3 A–5 A charging, extending battery runtime and reducing thermal throttling.

Use Scenario: High-efficiency 12 V-to-3.3 V buck converter powering SoC cores in portable SSDs and IoT gateways.

IC Role / Device Role / Timing Role: Power switch in synchronous buck topology, driven by integrated controller with 10 ns propagation delay.

Use Value: 17 ns rise time and 8 ns fall time enable stable 1.5 MHz operation, reducing output filter size while maintaining >92% efficiency at 2 A load.

Battery Protection Circuit

HDD Spindle Motor Driver

Use Scenario: Overcurrent and short-circuit protection in Li-ion battery packs for wearables and Bluetooth earbuds.

IC Role / Device Role / Timing Role: Primary discharge FET placed between battery cathode and system ground, controlled by fuel gauge IC.

Use Value: 30 A peak drain current (t_p ≤ 10 µs) safely handles fault currents, while 1 µA I_DSS leakage preserves shelf life over 12-month storage.

Use Scenario: PWM-controlled 5 V motor driver for 2.5-inch HDD spindle motors in ultrabooks and NAS enclosures.

IC Role / Device Role / Timing Role: Low-side switch modulating motor current at 25 kHz, synchronized to avoid audible noise.

Use Value: Fast 17 ns rise/fall times suppress voltage spikes during commutation, eliminating need for snubbers and reducing EMI filter complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 20 mΩ @ 4.5 V (vs. 20.5–24.5 mΩ for PMPB20EN); higher Q_G = 12.5 nC	Slightly lower conduction loss at 3.3 V gate drive but slower switching - better for <500 kHz apps where gate drive voltage is limited.	Select when driving from 3.3 V GPIO without buffer; avoid in >1 MHz DC-DC due to higher switching loss.
AO3414	R_DS(on) = 28 mΩ @ 4.5 V; larger SOT-23 package (3.0 × 1.4 mm); no exposed drain pad	Higher thermal resistance (R_th(j-a) ≈ 150 K/W) limits continuous current to ~3.5 A - suitable only for low-power loads.	Choose only for prototyping or low-current (<2 A), non-thermal-critical roles where DFN assembly is unavailable.

Compared with DMN2004LK-7 and AO3414, the PMPB20EN offers superior thermal performance via its exposed drain pad and best-in-class R_DS(on)/Q_G trade-off for 2×2 mm footprints - making it optimal for production-grade portable power stages demanding both density and efficiency.

Availability

PMPB20EN is available at Aetrix Electronics and suitable for smartphone charging switches, portable DC-DC converters, and battery protection circuits requiring stable component supply, consistent parametric performance across batches, and long-term lifecycle support.

Supply support for PMPB20EN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

The PMPB20EN belongs to Nexperia's TrenchMOS portfolio, engineered specifically for compact, high-efficiency power management in battery-powered consumer electronics - emphasizing low R_DS(on), fast switching, and thermal robustness in ultra-thin packages.

FAQ

What is the maximum continuous drain current for PMPB20EN at 100 °C ambient temperature?

The maximum continuous drain current is 4.6 A at T_amb = 100 °C, V_GS = 10 V, and with the device mounted on an FR4 PCB featuring a 6 cm² drain pad. This derating reflects thermal limitations of the DFN2020MD-6 package under sustained high-temperature operation, not electrical capability loss.

Does PMPB20EN require a gate resistor for stable switching in a 1 MHz buck converter?

Yes - a 1.7 Ω external gate resistor is specified in the datasheet for timing measurements (t_r, t_f). Using this value ensures controlled slew rate, prevents ringing, and avoids shoot-through in synchronous buck configurations. Lower values increase switching speed but risk oscillation; higher values degrade efficiency.

Can PMPB20EN be used in a high-side configuration with 12 V supply?

No - the PMPB20EN is a standard-level N-channel MOSFET with V_GS rating of ±20 V and no integrated charge pump. Driving it as a high-side switch would require gate voltage ≥12 V + V_GS(th), exceeding safe V_GS limits unless a dedicated high-side driver with bootstrap or isolated supply is used.

What is the recommended PCB footprint for reliable reflow soldering of PMPB20EN?

The official Nexperia footprint specifies six 0.33 mm × 0.76 mm solder lands (0.25 mm spacing), with a central 1.9 mm × 1.9 mm exposed drain pad. Solder paste deposit must cover the full pad area to ensure mechanical integrity and thermal performance - insufficient coverage causes delamination under thermal cycling.

PMPB20EN,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 7.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 19.5mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 435 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.7W (Ta), 12.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DFN2020MD-6

PMPB20EN,115 FAQ

1.How can I place an order for PMPB20EN,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PMPB20EN,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMPB20EN,115 reliable?

The price and inventory of PMPB20EN,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB20EN,115 is usually 5 days.

3.What payment methods are accepted for PMPB20EN,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB20EN,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMPB20EN,115?

PMPB20EN,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMPB20EN,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMPB20EN,115?

For technical support, including PMPB20EN,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB20EN,115 requirements.

6.How does Aetrix verify that PMPB20EN,115 is sourced from the original manufacturer or authorized distributors?

All PMPB20EN,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB20EN,115 meets industry standards.

7.What is the process for return or replacement of PMPB20EN,115?

All PMPB20EN,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMPB20EN,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMPB20EN,115 part is unused and in its original packaging.

Return procedure for PMPB20EN,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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