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Nexperia USA Inc. PMPB20ENZ

Part No.:
PMPB20ENZ
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
6-UDFN Exposed Pad
Datasheet:
AetrixPMPB20ENZ.pdf
Description:
MOSFET N-CH 30V 7.2A DFN2020MD-6
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,125

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Product details

Overview

PMPB20ENZ from Nexperia is a 30 V, N-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) leadless SMD package, designed for high-efficiency power switching in space-constrained portable electronics. It delivers RDS(on) = 16.5 mΩ (typ) at VGS = 10 V and ID = 7 A, supports 10.4 A continuous drain current at 25 °C, and features an exposed drain pad for thermal conduction in battery charging and DC-DC converter applications.

For engineers reviewing the PMPB20ENZ datasheet, PMPB20ENZ pinout, PMPB20ENZ application, or PMPB20ENZ equivalent, this device is selected for low-voltage, high-current switching where ultra-thin profile (0.65 mm height), fast switching speed, and FR4 PCB-compatible thermal performance are critical - especially in USB-C PD chargers, portable SSD power rails, and notebook VRM phases.

Technical Context

This MOSFET uses Trench technology to achieve low on-resistance and fast switching transitions, with gate charge QG(tot) = 7.2 nC (typ) and QGD = 0.67 nC (typ) enabling efficient gate drive in synchronous buck topologies. Its VGS(th) = 1.5 V (typ) ensures reliable turn-on with 3.3 V or 5 V logic-level control.

The device integrates a built-in source-drain diode (VSD = 0.8–1.2 V at IS = 2.2 A), and its thermal design targets junction-to-solder-point resistance of 5–10 K/W when mounted on a 6 cm² drain pad - directly supporting thermally demanding, high-duty-cycle power management functions.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 30 V maximum - supports input rails up to 24 V nominal with margin for transient spikes in portable power systems.
RDS(on) 16.5 mΩ typ at VGS = 10 V, ID = 7 A, Tj = 25 °C - enables <100 mW conduction loss at 7 A, critical for thermal budget in sealed enclosures.
ID (cont) 10.4 A at Tamb = 25 °C, t ≤ 5 s - suitable for short-duration peak loads like SSD wake-up or camera flash charging.
QG(tot) 7.2 nC typ - reduces gate driver power and switching transition time in high-frequency (≥1 MHz) DC-DC converters.
Tj max 150 °C - allows operation in thermally dense mobile platforms without active cooling.
VGS(th) 1.5 V typ - ensures full enhancement with standard 3.3 V GPIO or PMIC outputs, eliminating need for level shifters.
Package DFN2020MD-6 (SOT1220), 2.0 × 2.0 × 0.65 mm - fits 0808-inch footprints, compatible with automated reflow and optical solder inspection.

Pinout & Package

DFN2020MD-6 (SOT1220) is a thermally enhanced, leadless, ultra-thin plastic package with an exposed drain paddle on the bottom side and six side-wettable terminals. The package measures 2.0 mm × 2.0 mm × 0.65 mm and is optimized for high-power density mounting on FR4 PCBs with single-sided copper and tin-plated pads.

Pin/Terminal Circuit Role Design Meaning
1 Drain Primary high-current path; electrically and thermally connected to exposed bottom pad - must be soldered to ≥6 cm² copper area for rated power dissipation.
2 Drain Secondary drain connection; shares same node as Pin 1 and bottom pad - improves current sharing and thermal spreading.
3 Gate Control terminal; requires low-impedance drive due to 1.7 Ω internal gate resistance - minimizes ringing in high-dV/dt environments.
4 Source Reference node for gate drive and load return; tied to system ground or low-side switch node in buck converters.
5 Drain Third drain terminal; reinforces thermal and electrical connection to PCB drain pad - critical for achieving 12.5 W Ptot rating.
6 Source Second source terminal; provides low-inductance return path and aids in current balancing during fast switching transitions.

Key Features

Feature Design Value
Trench MOSFET architecture Enables 16.5 mΩ RDS(on) in 2×2 mm footprint - achieves >30% lower conduction loss vs. planar equivalents at same voltage rating.
Exposed drain pad Reduces Rth(j-sp) to 5–10 K/W - allows 3.5 W continuous dissipation on standard FR4, eliminating need for thermal vias or metal-core substrates.
Tin-plated side pads Supports automated optical solder inspection (AOI) - ensures zero-defect assembly in high-volume portable device manufacturing.
Ultra-thin 0.65 mm profile Enables stacking under compact shields or beneath thin batteries - meets mechanical stack-up requirements for sub-10 mm smartphones and ultrabooks.
Fast switching (tr/tf = 17/8 ns) Minimizes switching losses in 1–2 MHz DC-DC regulators - extends battery life by reducing energy lost per cycle in portable power stages.

Applications

USB-C Power Delivery Charging Switch Portable SSD Power Rail Switch

Use Scenario: Controls 5–20 V input power routing between USB-C port and internal battery or system rail in smartphones and tablets.

IC Role / Device Role / Timing Role: High-side load switch managing inrush current and reverse blocking during hot-plug events.

Use Value: Low RDS(on) limits voltage drop to <100 mV at 5 A, preserving PD negotiation voltage margins; fast turn-off prevents backfeed during cable disconnect.

Use Scenario: Enables/disables 3.3 V or 5 V power to NVMe SSD modules in ultraportable laptops and external enclosures.

IC Role / Device Role / Timing Role: Low-side power switch providing controlled sequencing and overcurrent protection during SSD initialization.

Use Value: 1.5 V VGS(th) ensures clean turn-on with 3.3 V PMIC enable signals; 0.65 mm height avoids interference with M.2 connector height constraints.

Notebook CPU/GPU VRM High-Side Switch Hard Disk Drive (HDD) Spindle Motor Power Control

Use Scenario: Synchronous rectifier in multiphase buck converters supplying core voltage to Intel/AMD processors in thin-and-light notebooks.

IC Role / Device Role / Timing Role: High-frequency (1–2 MHz), high-current (up to 10 A per phase) power switch operating in hard-switched topology.

Use Value: 7.2 nC QG(tot) and 1.7 Ω RG reduce gate drive losses and improve efficiency above 90% at 1 MHz; thermal pad sustains 120 °C junction temp under sustained load.

Use Scenario: Powers 5 V or 12 V spindle motor in 2.5-inch HDDs used in industrial edge servers and ruggedized computing devices.

IC Role / Device Role / Timing Role: Soft-start and current-limited power switch managing motor inrush and stall protection.

Use Value: 30 V VDS rating accommodates 12 V motor supply with 100% margin; integrated body diode handles flyback energy during PWM commutation without external freewheeling diode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2020LFG-7 RDS(on) = 20 mΩ (typ) at VGS = 4.5 V; slightly higher threshold (1.8 V typ); same DFN2020MD-6 package. Better suited for 4.5 V gate drive systems; marginally lower efficiency at 3.3 V logic but identical thermal footprint. Select when gate drive voltage is ≥4.5 V and tighter VGS(th) tolerance is required.
SI2302DS-T1-BE3 RDS(on) = 35 mΩ (typ) at VGS = 4.5 V; SOT-23 package (larger footprint, higher Rth(j-a) = 235 K/W). Limited to ≤3 A continuous current; unsuitable for high-power density designs due to thermal limitations and larger board area. Acceptable only for cost-sensitive, low-current (<2 A) applications where board space and thermal performance are secondary.

Compared with DMN2020LFG-7, PMPB20ENZ offers lower RDS(on) and faster switching for 3.3 V–driven systems; versus SI2302DS-T1-BE3, it delivers >2× current capability and 70% lower thermal resistance in half the footprint - making it the preferred choice for modern portable power architectures.

Availability

PMPB20ENZ is available at Aetrix Electronics and suitable for USB-C PD charging switches, portable SSD power rails, and notebook VRM high-side switches requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for PMPB20ENZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

PMPB20ENZ belongs to Nexperia's TrenchMOS portfolio - engineered specifically for space-constrained, thermally demanding power management in consumer and computing applications where efficiency, size, and manufacturability are co-optimized.

FAQ

What is the maximum continuous drain current for PMPB20ENZ at 100 °C ambient temperature?

The maximum continuous drain current is 4.6 A at Tamb = 100 °C, as specified in Table 5 (Limiting values). This derating reflects thermal constraints when mounted on an FR4 PCB with a 6 cm² drain pad and single-sided copper - not a device limitation but a board-level thermal boundary condition.

Does PMPB20ENZ require a gate resistor for stable switching in a 1 MHz buck converter?

Yes - a series gate resistor of 1–5 Ω is recommended to dampen ringing caused by the 1.7 Ω intrinsic gate resistance interacting with PCB trace inductance and driver output impedance. Typical evaluation designs use 2.2 Ω to balance switching speed (tr/tf) and EMI suppression without compromising efficiency.

Can PMPB20ENZ be used in automotive infotainment power supplies?

No - PMPB20ENZ is not AEC-Q101 qualified and lacks automotive-grade screening, temperature range validation beyond 150 °C junction, or guaranteed PPAP documentation. Nexperia explicitly states non-automotive qualification in its legal disclaimers; use only in consumer or industrial portable equipment.

How does the exposed drain pad affect PCB layout requirements?

The exposed drain pad must be connected to a minimum 6 cm² copper area on the top layer, using ≥6 thermal vias (0.3 mm diameter) to inner or bottom ground planes. Failure to meet this requirement increases Rth(j-sp) from 5–10 K/W to >33 K/W, limiting continuous power dissipation from 12.5 W to <3.5 W and risking thermal shutdown.

PMPB20ENZ Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
19.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
10.8 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
435 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1.7W (Ta), 12.5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DFN2020MD-6

PMPB20ENZ FAQ

1.How can I place an order for PMPB20ENZ through Aetrix?

Please submit a Request for Quotation (RFQ) for PMPB20ENZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMPB20ENZ reliable?

The price and inventory of PMPB20ENZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB20ENZ is usually 5 days.

3.What payment methods are accepted for PMPB20ENZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB20ENZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMPB20ENZ?

PMPB20ENZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMPB20ENZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMPB20ENZ?

For technical support, including PMPB20ENZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB20ENZ requirements.

6.How does Aetrix verify that PMPB20ENZ is sourced from the original manufacturer or authorized distributors?

All PMPB20ENZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB20ENZ meets industry standards.

7.What is the process for return or replacement of PMPB20ENZ?

All PMPB20ENZ units undergo pre-shipment inspection (PSI). If there is an issue with PMPB20ENZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMPB20ENZ part is unused and in its original packaging.

Return procedure for PMPB20ENZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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