Nexperia USA Inc. PMPB215ENEA/FX
- Part No.:
- PMPB215ENEA/FX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
PMPB215ENEA/FX.pdf
- Description:
- MOSFET N-CH 80V 2.8A 6DFN
- Quantity:
- Payment:

- Shipping:

Inventory:2,875
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PMPB215ENEA from Nexperia is a single N-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) package, rated for 80 V drain-source voltage, 2.8 A continuous drain current at 25 °C, and 175–230 mΩ RDS(on) at VGS = 10 V and ID = 1.9 A. It serves as a low-side load switch or high-speed line driver in automotive and industrial power control circuits.
For engineers reviewing the PMPB215ENEA datasheet, PMPB215ENEA pinout, PMPB215ENEA application, or PMPB215ENEA equivalent, key selection criteria include its AEC-Q101 qualification, ultra-thin 2 × 2 × 0.65 mm leadless package with exposed drain pad, thermal resistance of 33–38 K/W (junction-to-solder point), and gate charge profile optimized for fast switching in relay and load-switching topologies.
Technical Context
This MOSFET employs Trench technology to achieve low on-resistance and stable threshold voltage (1.3–2.7 V) across temperature. Its six-terminal DFN2020MD-6 layout features five drain terminals and one source terminal on each side, enabling high-current capability and efficient heat dissipation via the exposed drain pad.
The device supports gate drive voltages from −20 V to +20 V, exhibits 4.8–7.2 nC total gate charge, and delivers 7 S forward transconductance at VDS = 10 V and ID = 1.9 A. Its safe operating area (SOA) is defined up to 7.6 A peak drain current (10 µs pulse) and 80 V VDS, with normalized power derating down to 0% at 150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Maximum blocking voltage before avalanche onset; suitable for 24 V and 48 V automotive supply rails. |
| RDS(on) | 175–230 mΩ @ VGS = 10 V, ID = 1.9 A, Tj = 25 °C - Enables <1.2 W conduction loss at 1.9 A, critical for thermally constrained PCB layouts. |
| ID (continuous) | 2.8 A @ Tamb = 25 °C, t ≤ 5 s - Supports sustained load switching in compact DC-DC or motor driver stages. |
| QG(tot) | 4.8–7.2 nC - Low gate charge enables fast turn-on/turn-off (td(on) = 3.5 ns, tf = 3 ns) with minimal gate driver power demand. |
| Rth(j-sp) | 4–8 K/W - Junction-to-solder point thermal resistance confirms effective heat transfer to PCB copper, enabling >15 W power dissipation with proper pad design. |
| VGS(th) | 1.3–2.7 V - Threshold voltage range ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers. |
| Ciss | 215 pF - Input capacitance value informs gate driver sizing and switching loss estimation in high-frequency PWM applications. |
Pinout & Package
DFN2020MD-6 (SOT1220) is a 2.0 × 2.0 × 0.65 mm leadless, ultra-thin surface-mount package with an exposed drain pad on the bottom for thermal conduction and tin-plated side pads for optical solder inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6, 7 | Drain (D) | Five parallel drain terminals reduce current density and package inductance; all connected to the exposed bottom pad for optimal thermal path. |
| 3 | Gate (G) | Single gate input with 1 Ω typical gate resistance; requires low-impedance drive to minimize switching losses. |
| 4, 8 | Source (S) | Two source terminals provide low-inductance return path; used with gate to define VGS and enable accurate current sensing. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD (HBM 2000 V), enabling use in under-hood ECUs and body control modules. |
| Exposed drain pad | Enables direct thermal coupling to PCB copper; achieves Rth(j-sp) as low as 4 K/W, supporting >15 W continuous power dissipation on 6 cm² FR4 pad. |
| Trench MOSFET architecture | Delivers stable RDS(on) over temperature (RDS(on) × 2.5× increase from 25 °C to 150 °C) and tight VGS(th) distribution for consistent system timing. |
| Optical solder inspection compatible | Tin-plated side pads allow automated optical inspection (AOI) without X-ray, reducing manufacturing defect escape in high-volume automotive assembly. |
| Ultra-thin 0.65 mm profile | Supports space-constrained designs such as LED drivers, USB-C PD adapters, and compact battery management systems where Z-height is limited. |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
|
Use Scenario: Replacing electromechanical relays in automotive door lock actuators and HVAC valve controls. IC Role / Device Role / Timing Role: Low-side switch controlling coil current; turns on/off within 10 ns to support PWM-based current regulation. Use Value: Eliminates relay bounce and wear-out failure modes while reducing board area by >50% versus through-hole relay solutions. |
Use Scenario: Driving capacitive bus lines in CAN FD or LIN transceiver interface circuits. IC Role / Device Role / Timing Role: Fast-switching buffer stage isolating microcontroller GPIO from noisy bus loads. Use Value: 3 ns fall time and 215 pF Ciss enable clean edge integrity up to 5 Mbps without signal distortion or overshoot. |
| Low-Side Load Switch | Switching Circuit |
|
Use Scenario: Power sequencing and fault-isolation for 12 V/24 V subsystems in ADAS cameras and radar modules. IC Role / Device Role / Timing Role: Controlled power rail switch with fast turn-off (<10 ns) to prevent backfeed during hot-swap events. Use Value: 2.8 A rating and 175 mΩ RDS(on) limit voltage drop to <500 mV at full load, preserving downstream regulator headroom. |
Use Scenario: Synchronous rectification in buck converters for infotainment power supplies. IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode; commutated at 500 kHz with 7.2 nC QG(tot). Use Value: Reduces conduction loss by >40% versus 40 V Schottky, improving efficiency from 88% to 92% at 2 A output. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-side switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2053UVT-7 | 60 V VDS, 3.2 A ID, 150 mΩ RDS(on), same DFN2020MD-6 package | Limited to 60 V systems; lower RDS(on) improves efficiency but reduces voltage margin in 48 V automotive transients. | Select when 60 V rating suffices and lower conduction loss is prioritized over transient robustness. |
| PSMN1R0-30YLC | 30 V VDS, 100 A ID, 1.0 mΩ RDS(on), larger LFPAK56 package | Higher current capacity and lower RDS(on), but incompatible footprint and excessive voltage rating for 12/24 V loads. | Choose only if board redesign allows larger package and system requires <0.5 mΩ conduction loss at >5 A. |
Compared with DMN2053UVT-7 and PSMN1R0-30YLC, PMPB215ENEA uniquely balances 80 V robustness, AEC-Q101 compliance, and ultra-compact DFN2020MD-6 packaging-making it optimal for space- and reliability-critical 24 V/48 V automotive switches where voltage margin and thermal performance outweigh raw RDS(on) minimization.
Availability
PMPB215ENEA is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O modules, and consumer power adapters requiring stable component supply, AEC-Q101 traceability, and thermal performance in ultra-thin form factors.
Supply support for PMPB215ENEA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and consumer markets.
PMPB215ENEA belongs to Nexperia's TrenchMOS portfolio-designed specifically for high-efficiency, space-constrained power switching in automotive and industrial applications where AEC-Q101 reliability and thermal performance are mandatory.
FAQ
What is the maximum continuous drain current for PMPB215ENEA at 100 °C ambient temperature?
The maximum continuous drain current is 1.2 A at Tamb = 100 °C, as specified in Table 5 (Limiting values). This derating reflects thermal constraints of the DFN2020MD-6 package on standard FR4 PCBs and must be verified against actual board layout and airflow conditions.
Does PMPB215ENEA have integrated ESD protection, and what is its HBM rating?
Yes, PMPB215ENEA is rated for 2000 V HBM (Human Body Model) ESD per JESD22-A114, as stated in Table 5. This level meets AEC-Q101 requirements for discrete semiconductors and supports handling in standard manufacturing environments without additional external protection.
Can PMPB215ENEA be used in synchronous rectification applications?
Yes-it is suitable for synchronous rectification in buck converters up to 500 kHz, with 4.8–7.2 nC total gate charge and 3 ns fall time enabling efficient switching. Its 80 V VDS rating supports secondary-side operation in 24 V and 48 V output designs with sufficient voltage margin.
What is the recommended PCB footprint for thermal performance?
The recommended footprint uses a 6 cm² exposed drain pad on single-sided FR4 copper, tin-plated, per Figure 19 and Table 6 notes. This achieves Rth(j-sp) = 4–8 K/W and supports up to 15.6 W total power dissipation-critical for maintaining Tj < 150 °C in sealed enclosures.
PMPB215ENEA/FX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 230mOhm @ 1.9A, 10V
- Vgs(th) (Max) @ Id:
- 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 215 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.6W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN2020MD-6
PMPB215ENEA/FX FAQ
1.How can I place an order for PMPB215ENEA/FX through Aetrix?
Please submit a Request for Quotation (RFQ) for PMPB215ENEA/FX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMPB215ENEA/FX reliable?
The price and inventory of PMPB215ENEA/FX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB215ENEA/FX is usually 5 days.
3.What payment methods are accepted for PMPB215ENEA/FX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB215ENEA/FX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMPB215ENEA/FX?
PMPB215ENEA/FX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMPB215ENEA/FX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMPB215ENEA/FX?
For technical support, including PMPB215ENEA/FX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB215ENEA/FX requirements.
6.How does Aetrix verify that PMPB215ENEA/FX is sourced from the original manufacturer or authorized distributors?
All PMPB215ENEA/FX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB215ENEA/FX meets industry standards.
7.What is the process for return or replacement of PMPB215ENEA/FX?
All PMPB215ENEA/FX units undergo pre-shipment inspection (PSI). If there is an issue with PMPB215ENEA/FX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMPB215ENEA/FX part is unused and in its original packaging.
Return procedure for PMPB215ENEA/FX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PMPB215ENEA/FX Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

