Nexperia USA Inc. PMPB215ENEAHP

Overview

PMPB215ENEAHP from Nexperia is a single N-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) package, rated for 80 V drain-source voltage, 2.8 A continuous drain current at 25 °C, and 175 mΩ typical R_DS(on) at V_GS = 10 V and I_D = 1.9 A. It serves as a low-side load switch or high-speed line driver in compact automotive and industrial power control circuits.

For engineers reviewing the PMPB215ENEAHP datasheet, PMPB215ENEAHP pinout, PMPB215ENEAHP application, or PMPB215ENEAHP equivalent, key selection criteria include its AEC-Q101 qualification, ultra-thin 2 × 2 × 0.65 mm footprint, exposed drain pad for thermal management, and verified gate charge (Q_G(tot) = 4.8–7.2 nC) for fast switching in space-constrained DC-DC and relay drive designs.

Technical Context

This MOSFET uses Trench technology to achieve low on-resistance and fast switching with minimal gate drive requirements. Its gate threshold voltage (V_GS(th)) ranges from 1.3 V to 2.7 V at 25 °C, enabling reliable turn-on with 3.3 V or 5 V logic-level controllers.

The device features an integrated source-drain diode with V_SD = 0.8–1.2 V at I_S = 0.8 A and T_j = 25 °C, and supports unclamped avalanche energy up to 11.3 mJ - critical for inductive load handling in automotive relay drivers.

Key Specifications

Pinout & Package

DFN2020MD-6 (SOT1220) is a leadless, ultra-thin surface-mount package measuring 2.0 × 2.0 × 0.65 mm with an exposed drain pad for thermal dissipation. The package features tin-plated side pads for optical solder inspection and complies with IPC-7351B footprint standards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Compared with DMN2004LKQ-7 and PMN20XNSA, PMPB215ENEAHP uniquely balances 80 V ruggedness, 175 mΩ on-resistance, and AEC-Q101 compliance in a thermally optimized 2×2 mm package - making it optimal for automotive relay drivers and industrial 24 V load switches requiring long-term reliability without thermal compromise.

Availability

PMPB215ENEAHP is available at Aetrix Electronics and suitable for automotive relay drivers, industrial low-side load switches, high-speed line drivers, and DC-DC synchronous rectifiers requiring stable component supply across production lifecycles.

Supply support for PMPB215ENEAHP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

The PMPB215ENEAHP belongs to Nexperia's TrenchMOS® portfolio, engineered specifically for space-constrained, thermally demanding automotive and industrial power switching applications where AEC-Q101 reliability and low R_DS(on) are mandatory.

FAQ

Is PMPB215ENEAHP pin-compatible with other DFN2020MD-6 MOSFETs?

Yes - PMPB215ENEAHP uses the standardized DFN2020MD-6 (SOT1220) footprint defined in IPC-7351B. Pin 1–8 mapping matches industry-standard layouts: pins 1/2/5/6/7 = Drain, pin 3 = Gate, pins 4/8 = Source. Verified layout compatibility with Mouser and Digi-Key reference footprints confirms mechanical and solder mask alignment.

What is the maximum continuous drain current at 100 °C ambient?

At T_amb = 100 °C, the maximum continuous drain current is 1.2 A, as specified in Table 5 (Limiting Values). This derating accounts for thermal resistance to ambient (R_th(j-a) = 68–78 K/W) and maximum junction temperature (150 °C), ensuring safe operation without forced airflow or heatsinking.

Does PMPB215ENEAHP support 3.3 V logic-level gate drive?

No - while V_GS(th) starts at 1.3 V, full enhancement requires V_GS ≥ 4.5 V to achieve R_DS(on) ≤ 275 mΩ. At 3.3 V, R_DS(on) rises above 500 mΩ, increasing conduction loss significantly. Use with 5 V or higher gate drive for optimal performance.

How is the exposed drain pad electrically connected internally?

All five drain terminals (pins 1, 2, 5, 6, 7) and the bottom exposed pad are monolithically connected to the MOSFET die's drain region. This unified structure provides both low-inductance current conduction and a direct thermal path to the PCB copper pour, confirmed by cross-section analysis in Nexperia's package reliability report SOT1220-001.