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Nexperia USA Inc. PMPB23XNE,115
- Part No.:
- PMPB23XNE,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
PMPB23XNE,115.pdf
- Description:
- MOSFET N-CH 20V 7A DFN2020MD-6
- Quantity:
- Payment:
- Shipping:
Inventory:9,202
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Product details
Overview
PMPB23XNE from Nexperia is a 20 V, single N-channel Trench MOSFET in a DFN2020MD-6 (SOT1220) leadless package, designed as a low-RDS(on) power switch for portable battery management. It delivers 10.1 A continuous drain current at VGS = 4.5 V and 25 °C, exhibits 19 mΩ typical on-resistance, and integrates 2.1 kV HBM ESD protection - enabling robust operation in space-constrained DC-DC converters and charging circuits.
For engineers reviewing the PMPB23XNE datasheet, PMPB23XNE pinout, PMPB23XNE application, or PMPB23XNE equivalent, key selection criteria include its ultra-thin 2 × 2 × 0.65 mm footprint, exposed drain pad for thermal conduction, tin-plated side pads for optical solder inspection, and validated performance across ambient temperatures from –55 °C to 150 °C.
Technical Context
This MOSFET employs Trench technology to achieve enhanced channel density and reduced specific on-resistance. Its gate threshold voltage (0.4–0.9 V at 250 µA) enables reliable turn-on with low-voltage logic drivers, while its 11.6–17 nC total gate charge supports efficient high-frequency switching in synchronous buck stages.
The device features an integrated source-drain diode with 0.6–1.2 V forward voltage at 1.9 A and 25 °C, and its safe operating area (SOA) is defined up to 24 A peak drain current for 10 µs pulses - critical for transient load handling in portable power rails.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V maximum drain-source voltage - sets upper limit for input rail compatibility in 12 V and lower battery systems. |
| RDS(on) | 19 mΩ typical at VGS = 4.5 V, ID = 7 A, Tj = 25 °C - enables <150 mW conduction loss at 7 A, reducing thermal burden in compact layouts. |
| ID (continuous) | 10.1 A at VGS = 4.5 V, Tamb = 25 °C, t ≤ 5 s - supports high-current charging paths without forced cooling on FR4 PCBs. |
| QG(tot) | 11.6–17 nC - determines gate drive energy requirement; compatible with standard 3.3 V/5 V microcontroller GPIOs via small external buffer. |
| Rth(j-sp) | 5–10 K/W junction-to-solder-point thermal resistance - enables direct thermal coupling to PCB copper pour for passive heat dissipation. |
| VGS(th) | 0.4–0.9 V at ID = 250 µA - ensures full enhancement with 1.8 V logic, supporting modern low-voltage system architectures. |
| ESD Rating | 2100 V HBM - eliminates need for external ESD protection in handheld device front-end switches. |
Pinout & Package
DFN2020MD-6 (SOT1220) is a 2.0 × 2.0 × 0.65 mm leadless thermally enhanced plastic package with an exposed drain pad on the bottom surface and six side-wettable terminals for automated optical inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6, 7 | Drain (D) | Five parallel drain terminals connected to internal die drain metallization and exposed bottom pad - provide low-inductance, high-current path and primary thermal conduction route to PCB. |
| 3 | Gate (G) | Single gate terminal with 2.4 Ω typical gate resistance - limits dV/dt-induced shoot-through in half-bridge configurations and eases gate driver sizing. |
| 4, 8 | Source (S) | Two source terminals tied to source bond wires - reduce source inductance and improve stability during fast switching transitions. |
Key Features
| Feature | Design Value |
|---|---|
| Thermally optimized package | Exposed drain pad + 2 × 2 mm footprint delivers Rth(j-sp) as low as 5 K/W - reduces junction temperature rise by >30 °C vs. standard SOT-23 under identical 7 A load. |
| Trench MOSFET architecture | 19 mΩ RDS(on) at 4.5 V drive enables >95% efficiency in 3.3 V output buck converters delivering 5 A. |
| Side-wettable terminations | Tin-plated side pads support automated optical solder joint inspection - critical for zero-defect manufacturing in consumer electronics assembly. |
| High ESD robustness | 2100 V HBM rating allows direct integration into USB-powered device charging paths without additional TVS protection. |
Applications
| Charging Switch for Portable Devices | DC-DC Converter High-Side Switch |
|---|---|
|
Use Scenario: Bidirectional USB-C power path control in smartphones and tablets, managing battery charge/discharge routing between adapter and battery. IC Role / Device Role / Timing Role: Low-side or high-side load switch controlling power flow direction and isolation between VBUS and battery rail. Use Value: 19 mΩ RDS(on) minimizes voltage drop and heat generation during 3 A charging, extending battery life and enabling thinner form factors. |
Use Scenario: High-efficiency 3.3 V synchronous buck converter in wearables, stepping down 8.4 V dual-cell Li-ion battery voltage. IC Role / Device Role / Timing Role: High-side power switch operating at 1.5 MHz with 11.6 nC QG, driven by integrated controller's gate driver. Use Value: Low QG/RDS(on) ratio enables >92% efficiency at 100 mA–2 A loads without active cooling. |
| Power Management in Battery-Driven Portables | Hard Disk Drive Power Sequencing |
|
Use Scenario: System-level power rail enable/disable for Bluetooth SoCs and sensors in wireless earbuds, activated by MCU GPIO. IC Role / Device Role / Timing Role: Logic-level controlled load switch isolating subsystems during sleep mode to reduce quiescent current. Use Value: 0.65 V gate threshold ensures full turn-on with 1.8 V I/O, cutting leakage to <1 µA while maintaining fast 32 ns fall time. |
Use Scenario: Controlled 5 V and 12 V power delivery to HDD spindle motor and logic board during boot-up and shutdown sequences. IC Role / Device Role / Timing Role: Sequenced power switch triggered by PMIC enable signals to prevent inrush current and bus contention. Use Value: 24 A peak current rating handles HDD spin-up surges; 2.1 kV ESD protection prevents latch-up from board-level transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LFG-7 | 20 V, 8.5 A, 22 mΩ @ 4.5 V; same DFN2020MD-6 package but higher RDS(on) and lower ID rating. | Suitable for lower-current (<6 A) portable loads where thermal margin is less constrained. | Select when cost sensitivity outweighs 15% conduction loss increase and peak current headroom is not required. |
| SI2302DS-T1-BE3 | 20 V, 2.6 A, 80 mΩ @ 4.5 V; SOT-23 package, no exposed pad, higher thermal resistance. | Applicable only in low-power always-on monitoring circuits with <1 A steady-state current. | Choose only for legacy designs requiring SOT-23 footprint compatibility - not recommended for new portable power designs. |
Compared with DMN2020LFG-7 and SI2302DS-T1-BE3, PMPB23XNE provides superior current handling (10.1 A vs. 8.5 A/2.6 A), lowest RDS(on) (19 mΩ), and best thermal performance due to its exposed drain pad - making it the optimal choice for high-density, thermally limited portable power switches.
Availability
PMPB23XNE is available at Aetrix Electronics and suitable for charging switches in portable devices, DC-DC converter high-side switches, and power management in battery-driven portables requiring stable component supply and long-term lifecycle support.
Supply support for PMPB23XNE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete, logic, and MOSFET solutions, with roots in Philips and headquartered in Nijmegen, Netherlands.
PMPB23XNE belongs to Nexperia's TrenchMOS portfolio - engineered specifically for space-constrained, high-efficiency power switching in portable and battery-powered electronics where thermal performance and logic-level drive are critical.
FAQ
What is the maximum continuous drain current for PMPB23XNE at 100 °C ambient temperature?
The maximum continuous drain current is 4.4 A at Tamb = 100 °C, VGS = 4.5 V, per the limiting values table. This derating reflects thermal constraints of the DFN2020MD-6 package on standard FR4 PCBs without extended copper pours.
Does PMPB23XNE require a gate resistor for stable operation in a 1.5 MHz DC-DC converter?
A gate resistor is recommended: the device's 2.4 Ω intrinsic gate resistance helps dampen ringing, but a 5–10 Ω external series resistor improves EMI performance and prevents overshoot when driven by low-impedance controllers. Layout-dependent parasitics may necessitate tuning between 0–15 Ω.
Can PMPB23XNE be used in a high-side configuration with 5 V gate drive?
Yes - with VGS = 5 V, the device achieves full enhancement well below its 12 V absolute maximum rating. At 5 V, RDS(on) drops to ~17 mΩ (typical), and the 0.4–0.9 V VGS(th) ensures robust turn-on even with gate drive tolerances.
How does the exposed drain pad affect PCB layout requirements for thermal performance?
The exposed drain pad must be connected to a minimum 6 cm² copper area on the top layer, single-sided, tin-plated, and thermally vias (≥6× 0.3 mm diameter) to inner ground planes are strongly recommended. This configuration achieves the specified 5–10 K/W Rth(j-sp) and prevents junction temperature exceedance above 125 °C at 7 A.
PMPB23XNE,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1136 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.7W (Ta), 12.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN2020MD-6
PMPB23XNE,115 FAQ
1.How can I place an order for PMPB23XNE,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMPB23XNE,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMPB23XNE,115 reliable?
The price and inventory of PMPB23XNE,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB23XNE,115 is usually 5 days.
3.What payment methods are accepted for PMPB23XNE,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB23XNE,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMPB23XNE,115?
PMPB23XNE,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMPB23XNE,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMPB23XNE,115?
For technical support, including PMPB23XNE,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB23XNE,115 requirements.
6.How does Aetrix verify that PMPB23XNE,115 is sourced from the original manufacturer or authorized distributors?
All PMPB23XNE,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB23XNE,115 meets industry standards.
7.What is the process for return or replacement of PMPB23XNE,115?
All PMPB23XNE,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMPB23XNE,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMPB23XNE,115 part is unused and in its original packaging.
Return procedure for PMPB23XNE,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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