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NXP Semiconductors PMPB23XNEZ
- Part No.:
- PMPB23XNEZ
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
PMPB23XNEZ.pdf
- Description:
- PMPB23XNE - 20 V, SINGLE N-CHANN
- Quantity:
- Payment:
- Shipping:
Inventory:3,600
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Product details
Overview
PMPB23XNE from Nexperia is a 20 V, single N-channel Trench MOSFET in a DFN2020MD-6 (SOT1220) leadless ultra-thin SMD package, designed for high-efficiency power switching in space-constrained portable electronics. It delivers RDS(on) = 19 mΩ at VGS = 4.5 V and ID = 7 A, supports 10.1 A continuous drain current at 25 °C, features 2.1 kV HBM ESD protection, and uses an exposed drain pad for enhanced thermal conduction in battery-powered charging switches.
For engineers reviewing the PMPB23XNE datasheet, PMPB23XNE pinout, PMPB23XNE application, or PMPB23XNE equivalent, key selection criteria include its 20 V VDS, low 19 mΩ on-resistance at 4.5 V gate drive, 6-terminal DFN2020MD-6 thermal-enhanced footprint, junction temperature range of −55 to 150 °C, and suitability for compact DC-DC converter and portable power management designs.
Technical Context
This N-channel enhancement-mode MOSFET employs Trench technology to achieve low RDS(on) and fast switching with QG(tot) = 11.6–17 nC and tf = 32 ns. Its gate threshold voltage (VGS(th)) ranges from 0.4 V to 0.9 V, enabling reliable turn-on with 1.8 V–4.5 V logic-level drive.
The device integrates an internal source-drain diode with VSD = 0.6–1.2 V at IS = 1.9 A and exhibits Ciss = 1136 pF and Crss = 112 pF, supporting stable operation in synchronous rectification and load-switching topologies under 25 °C to 150 °C junction conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum drain-source blocking voltage; defines safe operating ceiling in 5 V–12 V rail applications. |
| RDS(on) | 19–22 mΩ @ VGS = 4.5 V, ID = 7 A, Tj = 25 °C - Enables <150 mW conduction loss at 7 A, critical for thermally constrained PCBs. |
| ID (continuous) | 10.1 A @ Tamb = 25 °C, t ≤ 5 s - Supports high-pulse load switching in USB-C PD and battery protection circuits. |
| VGS(th) | 0.4–0.9 V - Ensures robust gate turn-on with low-voltage microcontrollers and PMICs without level-shifting. |
| QG(tot) | 11.6–17 nC - Determines gate drive strength requirement; compatible with standard 1–5 Ω gate resistors for <50 ns switching transitions. |
| Tj range | −55 to 150 °C - Qualified for extended industrial and portable ambient environments including battery pack interiors. |
| ESD rating | 2100 V HBM - Eliminates need for external ESD protection in handheld device front-end switches. |
Pinout & Package
Package: DFN2020MD-6 (SOT1220), 2.0 × 2.0 × 0.65 mm, leadless, thermally enhanced with exposed drain pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6, 7 | Drain (D) | Five parallel drain terminals connected to exposed copper pad - provides low-inductance, high-current path and primary thermal conduction to PCB. |
| 3 | Gate (G) | Single gate input - accepts standard logic-level drive; RG = 2.4 Ω typical enables predictable Miller plateau timing. |
| 4, 8 | Source (S) | Two source terminals - reduce source inductance in high-di/dt switching; referenced to system ground in low-side configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Exposed drain pad | Reduces Rth(j-a) to 67–74 K/W on 6 cm² FR4 copper - lowers junction temperature rise by >30 % vs. standard SO-8 in same layout. |
| Tin-plated side pads | Enables automated optical solder inspection (AOI) without X-ray - improves manufacturing yield in high-volume portable assembly. |
| 2.1 kV HBM ESD protection | Meets IEC 61000-4-2 Level 3 without external TVS - simplifies BOM for USB/charging port interface circuits. |
| Ultra-thin 0.65 mm profile | Fits within 1.0 mm Z-height constraints of slim smartphones and wearables - replaces larger SOT-23 or TSOP-6 devices. |
| Trench MOSFET architecture | Delivers 29–34 mΩ RDS(on) at 150 °C - maintains <2× room-temperature resistance across full operating range for stable thermal design. |
Applications
| Charging Switch for Portable Devices | DC-to-DC Converters |
|---|---|
|
Use Scenario: Bidirectional USB-C power path control in smartphones and tablets, managing charge flow between adapter, battery, and system rail. IC Role / Device Role: Low-side N-channel load switch controlling battery charging enable/disable with reverse current blocking. Use Value: 19 mΩ RDS(on) minimizes voltage drop and heat generation during 3–5 A charging currents, extending battery runtime and reducing thermal throttling. |
Use Scenario: Synchronous rectifier in buck converters powering SoCs and memory in portable computing devices. IC Role / Device Role: Secondary-side power switch replacing Schottky diodes to improve conversion efficiency above 85 % at light-to-moderate loads. Use Value: Low QG(tot) and fast tf = 32 ns support 1–2 MHz switching frequencies while maintaining <100 mW conduction loss at 6 A output. |
| Power Management in Battery-Driven Portables | Hard Disk and Computing Power Management |
|
Use Scenario: System power rail isolation in Bluetooth earbuds and smartwatches, disconnecting peripherals during sleep mode. IC Role / Device Role: High-side or low-side power switch enabling zero-quiescent-current shutdown of sensors, radios, and displays. Use Value: Sub-1 V VGS(th) ensures clean turn-off with 1.2 V LDO outputs; 1 µA IDSS prevents battery drain over weeks of standby. |
Use Scenario: Voltage rail sequencing and hot-swap control for 2.5-inch HDDs and M.2 SSDs in ultrabooks and NAS enclosures. IC Role / Device Role: Inrush current limiter and fault-isolation switch protecting 5 V/12 V SATA power rails from short-circuit events. Use Value: 24 A peak drain current (IDM) withstands HDD spin-up surges; exposed drain pad sustains 3.5 W pulsed dissipation without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LFG-7 | RDS(on) = 22 mΩ @ 4.5 V; same DFN2020MD-6 package; VGS(th) = 0.5–1.2 V; lower ESD (1.5 kV HBM). | Marginally higher on-resistance and wider VGS(th) spread may require gate drive validation in 1.8 V systems. | Preferred where supply chain diversification is needed and 3% RDS(on) increase is acceptable. |
| SI2302DS-T1-BE3 | RDS(on) = 35 mΩ @ 4.5 V; SOT-23 package; VGS(th) = 0.4–1.0 V; no exposed drain pad; Rth(j-a) = 235 K/W. | Higher thermal resistance and on-resistance limit use to <2 A continuous loads; unsuitable for high-density thermal layouts. | Select only when board space allows SOT-23 and thermal budget permits >2× conduction loss versus PMPB23XNE. |
Compared with DMN2020LFG-7 and SI2302DS-T1-BE3, the PMPB23XNE offers the lowest RDS(on) and best thermal performance in its footprint, making it optimal for high-current, space-constrained portable power switches where efficiency and junction temperature control are critical.
Availability
PMPB23XNE is available at Aetrix Electronics and suitable for portable charging switches, DC-DC converter synchronous rectifiers, and battery-powered power management systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for PMPB23XNE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic components, with leadership in advanced packaging and automotive-qualified power solutions.
The PMPB23XNE belongs to Nexperia's TrenchMOS portfolio, engineered specifically for efficiency-critical, space-constrained power switching in consumer portables-emphasizing low RDS(on), ultra-thin packaging, and robust ESD tolerance.
FAQ
What is the maximum continuous drain current for PMPB23XNE at 100 °C ambient temperature?
The PMPB23XNE supports 4.4 A continuous drain current at Tamb = 100 °C with VGS = 4.5 V, as specified in Table 5 of the datasheet. This derating reflects thermal limits under standard FR4 mounting conditions with 6 cm² drain pad area. At 25 °C, the rating increases to 10.1 A for t ≤ 5 s pulses. Engineers must verify PCB copper area and airflow to sustain this current in real-world PMPB23XNE deployments.
Does PMPB23XNE have a body diode, and what is its forward voltage?
Yes, the PMPB23XNE includes an integrated source-drain body diode with VSD = 0.6–1.2 V at IS = 1.9 A and Tj = 25 °C, per Table 7. This diode enables freewheeling in inductive loads and reverse-current blocking in load-switch configurations. Its low forward voltage reduces conduction loss compared to external Schottky diodes in compact DC-DC layouts using the PMPB23XNE.
Can PMPB23XNE be driven directly by a 1.8 V GPIO?
Yes-the PMPB23XNE has a gate threshold voltage VGS(th) as low as 0.4 V (min), and its RDS(on) remains 31–44 mΩ at VGS = 1.8 V and ID = 1.9 A (Table 7). While full enhancement occurs at ≥2.5 V, 1.8 V drive yields usable on-state resistance for low-current switching. For 7 A operation, however, ≥2.5 V is recommended; always validate with actual PMPB23XNE gate drive waveforms and thermal margin.
What is the thermal resistance from junction to solder point (Rth(j-sp)) for PMPB23XNE?
The PMPB23XNE has Rth(j-sp) = 5–10 K/W, per Table 6. This low value results from the exposed drain pad directly bonded to the PCB copper, enabling rapid heat transfer to the board. When designing thermal relief for the PMPB23XNE, prioritize large, multi-layer thermal vias under the drain pad and minimize trace length between the device and ground plane to fully leverage this specification.
Is PMPB23XNE suitable for automotive applications?
No-PMPB23XNE is not automotive-qualified. The datasheet explicitly states in Section 12.3 that "Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use." It lacks AEC-Q101 qualification, automotive-grade testing, and guaranteed operation beyond 125 °C junction temperature. For automotive power switching, select a designated AEC-Q101 part instead of the PMPB23XNE.
PMPB23XNEZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1136 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.7W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN2020MD-6
PMPB23XNEZ FAQ
1.How can I place an order for PMPB23XNEZ through Aetrix?
Please submit a Request for Quotation (RFQ) for PMPB23XNEZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMPB23XNEZ reliable?
The price and inventory of PMPB23XNEZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB23XNEZ is usually 5 days.
3.What payment methods are accepted for PMPB23XNEZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB23XNEZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMPB23XNEZ?
PMPB23XNEZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMPB23XNEZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMPB23XNEZ?
For technical support, including PMPB23XNEZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB23XNEZ requirements.
6.How does Aetrix verify that PMPB23XNEZ is sourced from the original manufacturer or authorized distributors?
All PMPB23XNEZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB23XNEZ meets industry standards.
7.What is the process for return or replacement of PMPB23XNEZ?
All PMPB23XNEZ units undergo pre-shipment inspection (PSI). If there is an issue with PMPB23XNEZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMPB23XNEZ part is unused and in its original packaging.
Return procedure for PMPB23XNEZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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