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Nexperia USA Inc. PMPB24EPX

Part No.:
PMPB24EPX
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
6-UDFN Exposed Pad
Datasheet:
AetrixPMPB24EPX.pdf
Description:
MOSFET P-CH 30V 6.4A DFN2020MD-6
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,725

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Product details

Overview

PMPB24EPX from Nexperia is a 30 V, P-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) package, designed for high-efficiency power switching in space-constrained portable electronics. It delivers 24 mΩ RDS(on) at VGS = −10 V and ID = −6.4 A (Tj = 25 °C), supports logic-level gate drive down to −4.5 V, and features an exposed drain pad for thermal conduction in battery-powered DC-DC converters and charging switches.

For engineers reviewing the PMPB24EPX datasheet, PMPB24EPX pinout, PMPB24EPX application, or PMPB24EPX equivalent, key selection criteria include its 24 mΩ on-resistance at −10 V gate drive, side-wettable flanks for automated optical solder inspection, 6.4 A continuous drain current rating on FR4 PCB, and compatibility with compact 2 × 2 × 0.65 mm layouts in portable power management systems.

Technical Context

This P-channel MOSFET uses Trench technology to achieve low RDS(on) and fast switching with QG(tot) = 19–28 nC and tf = 14 ns under standard test conditions. Its gate threshold voltage (VGS(th)) ranges from −1.0 V to −2.5 V at ID = −250 µA, enabling reliable turn-on with common 3.3 V or 5 V logic controllers.

The device integrates six terminals in a thermally enhanced DFN2020MD-6 package: five drain connections (pins 1, 2, 5, 6, 7) and two source connections (pins 4, 8), with a single gate terminal (pin 3). Thermal resistance from junction to solder point is as low as 4–8 K/W, supporting high-power-density designs without external heatsinking.

Key Specifications

Parameter Value and Actual Design Meaning
VDS −30 V maximum drain-source voltage - defines safe blocking capability in 12 V/24 V rail applications
RDS(on) 24 mΩ typical at VGS = −10 V, ID = −6.4 A, Tj = 25 °C - enables <150 mW conduction loss at 6.4 A
ID (cont) −6.4 A continuous drain current on FR4 PCB (6 cm² drain pad) - sets usable load current limit in handheld power stages
QG(tot) 19–28 nC total gate charge - determines required gate driver current for ≤100 ns switching transitions
VGS(th) −1.5 V typical gate-source threshold voltage - ensures full enhancement with 3.3 V microcontroller outputs
Rth(j-sp) 4–8 K/W junction-to-solder-point thermal resistance - allows direct thermal coupling to PCB copper for passive cooling
Ciss 1069 pF input capacitance - impacts gate drive loop stability and EMI filtering requirements

Pinout & Package

Package: DFN2020MD-6 (SOT1220), 2.0 × 2.0 × 0.65 mm, leadless, thermally enhanced with exposed drain pad and side-wettable flanks.

Pin/Terminal Circuit Role Design Meaning
1, 2, 5, 6, 7 Drain (D) Five parallel drain terminals - collectively handle full current path and provide low-inductance thermal interface to PCB
3 Gate (G) Single control terminal - requires <28 nC charge for full turn-on; compatible with 3.3 V logic-level drivers
4, 8 Source (S) Two source terminals - form return path for load current and reference node for gate drive

Key Features

Feature Design Value
Logic-level gate drive Operates fully enhanced at VGS = −4.5 V - eliminates need for level-shifting in 3.3 V system designs
Side-wettable flanks Visible solder fillets on package edges - enables automated optical inspection (AOI) of solder joint integrity
Exposed drain pad Thermal resistance to PCB as low as 4 K/W - dissipates >15 W with proper copper layout, avoiding external heatsinks
Trench MOSFET architecture 24 mΩ RDS(on) in 2 mm² footprint - achieves higher current density than planar P-channel alternatives
Ultra-thin profile 0.65 mm max height - fits beneath stacked batteries or within slim USB-C PD adapters

Applications

Charging Switch for Portable Devices DC-DC Converter High-Side Switch

Use Scenario: Bidirectional USB-C power path control in smartphones and tablets, managing charge flow between battery and port.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling battery-to-port or port-to-battery current direction.

Use Value: 24 mΩ RDS(on) limits voltage drop to <150 mV at 6 A, preserving battery runtime and reducing thermal stress in sealed enclosures.

Use Scenario: Synchronous buck converter output stage in portable SSDs or embedded computing modules.

IC Role / Device Role / Timing Role: High-side P-channel switch in non-isolated step-down regulator with integrated controller.

Use Value: Logic-level compatibility enables direct drive from 3.3 V PWM controllers, eliminating gate driver ICs and saving board area.

Power Management in Wearables Hard Disk Drive Power Sequencing

Use Scenario: Load switching for sensor clusters and BLE radios in fitness trackers, activated only during measurement cycles.

IC Role / Device Role / Timing Role: Low-quiescent-current power gate isolating subsystems during sleep mode.

Use Value: −1 µA IDSS leakage at −30 V ensures <1 µA standby current per switched rail, extending multi-week battery life.

Use Scenario: Controlled power-up sequencing for 2.5″ HDD spindle motor and servo electronics in portable NAS units.

IC Role / Device Role / Timing Role: Inrush-limited main power switch enabling staggered voltage ramping per subsystem.

Use Value: 26 A peak drain current (tp ≤ 10 µs) withstands motor startup surges without derating or snubbing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN3026LSD-13 RDS(on) = 28 mΩ @ −10 V; SO-8 package; 5.15 × 6.2 mm footprint Larger board area; higher thermal resistance (Rth(j-a) ≈ 62 K/W); no side-wettable flanks Select when legacy SO-8 layout reuse is prioritized over size/thermal performance
SI2301DS-T1-BE3 RDS(on) = 115 mΩ @ −4.5 V; SOT-23 package; 2.9 × 1.6 mm but lower current rating (−2.7 A) Lower cost but unsuitable for >3 A loads; lacks exposed drain pad and wettable flanks Select only for ultra-low-cost, sub-2 A load switching where thermal margin is ample

Compared with DMN3026LSD-13 and SI2301DS-T1-BE3, PMPB24EPX offers superior current density (6.4 A in 4 mm² vs. 5.1 A in 32 mm² or 2.7 A in 4.6 mm²), lower thermal resistance, and AOI-compatible packaging-making it optimal for next-generation compact, thermally constrained power rails.

Availability

PMPB24EPX is available at Aetrix Electronics and suitable for portable device charging switches, DC-DC converter high-side switching, and wearable power management requiring stable component supply across production lifecycles.

Supply support for PMPB24EPX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.

PMPB24EPX belongs to Nexperia's TrenchMOS portfolio, engineered specifically for space- and thermally constrained battery-powered applications demanding low RDS(on), logic-level drive, and robust manufacturability.

FAQ

What is the maximum continuous drain current for PMPB24EPX at 100 °C ambient temperature?

The maximum continuous drain current is −4.1 A at Tamb = 100 °C with the device mounted on an FR4 PCB having a 6 cm² drain pad. This derating reflects thermal limitations under sustained high-temperature operation and must be verified against actual board layout and airflow conditions.

Does PMPB24EPX require a gate resistor for ESD protection or switching control?

No external gate resistor is required for ESD protection-the device incorporates built-in gate protection diodes. However, a 1–10 Ω series resistor is recommended between driver and gate to dampen ringing and control dV/dt during switching, especially in high-frequency DC-DC applications.

Can PMPB24EPX be used in reverse polarity protection circuits?

Yes-its P-channel configuration and −30 V VDS rating make it suitable for reverse polarity protection at input voltages up to 24 V. When placed in the high-side position with gate tied to input, it blocks reverse current while maintaining low forward drop during normal operation.

Is the DFN2020MD-6 package compatible with standard reflow soldering profiles?

Yes-the package is qualified for IPC/JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260 °C. The recommended footprint (per Figure 19) uses 0.35 mm wide solder lands and 0.25 mm solder paste stencil openings to ensure reliable side-wettable flank formation.

PMPB24EPX Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
6.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
28mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
28 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1069 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1.8W (Ta), 15.6W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DFN2020MD-6

PMPB24EPX FAQ

1.How can I place an order for PMPB24EPX through Aetrix?

Please submit a Request for Quotation (RFQ) for PMPB24EPX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMPB24EPX reliable?

The price and inventory of PMPB24EPX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB24EPX is usually 5 days.

3.What payment methods are accepted for PMPB24EPX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB24EPX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMPB24EPX?

PMPB24EPX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMPB24EPX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMPB24EPX?

For technical support, including PMPB24EPX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB24EPX requirements.

6.How does Aetrix verify that PMPB24EPX is sourced from the original manufacturer or authorized distributors?

All PMPB24EPX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB24EPX meets industry standards.

7.What is the process for return or replacement of PMPB24EPX?

All PMPB24EPX units undergo pre-shipment inspection (PSI). If there is an issue with PMPB24EPX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMPB24EPX part is unused and in its original packaging.

Return procedure for PMPB24EPX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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