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Nexperia USA Inc. PMPB27EPZ
- Part No.:
- PMPB27EPZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- -
- Datasheet:
-
PMPB27EPZ.pdf
- Description:
- PMPB27EP/SOT1220/SOT1220
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
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Product details
Overview
PMPB27EPZ from Nexperia is a single P-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) leadless ultra-thin SMD package, rated for −30 V drain-source voltage, 24 mΩ typical RDS(on) at VGS = −10 V and ID = −6.1 A, and optimized for high-efficiency charging switches in portable electronics.
For engineers reviewing the PMPB27EPZ datasheet, PMPB27EPZ pinout, PMPB27EPZ application, or PMPB27EPZ equivalent, this device is selected for low-RDS(on), thermally enhanced drain pad layout, compact 2 × 2 mm footprint, and robust gate threshold stability across temperature - critical for battery-side power path control in space-constrained DC-DC and load-switch designs.
Technical Context
This P-channel MOSFET uses Trench technology to achieve low on-resistance and fast switching with minimal gate charge (QG(tot) = 30–45 nC). Its gate threshold voltage (VGS(th)) ranges from −1.0 V to −2.5 V at 25 °C, enabling reliable turn-on with standard logic-level drive in high-side switch configurations.
The device features an exposed drain pad for thermal conduction to PCB copper, delivering 1.7 W total power dissipation at 25 °C ambient and 3.5 W under short-duration pulse conditions. Its normalized RDS(on) increases only ~1.5× from 25 °C to 150 °C junction temperature, supporting stable operation in thermally demanding portable power rails.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −30 V - Maximum blocking voltage for battery-side high-side switch applications up to 30 V systems. |
| RDS(on) | 24 mΩ typ @ VGS = −10 V, ID = −6.1 A, Tj = 25 °C - Enables <150 mW conduction loss at 6 A, minimizing heat rise in thin PCBs. |
| QG(tot) | 30–45 nC - Low gate charge supports efficient PWM switching in DC-DC converters with reduced driver power demand. |
| Tj max | 150 °C - Allows sustained operation in compact enclosures with limited airflow, such as USB-C PD adapters and SSD power rails. |
| Rth(j-a) | 67–74 K/W - Thermal resistance to ambient on 6 cm² drain pad enables 1.7 W continuous dissipation without heatsink. |
| VGS(th) | −1.5 V typ - Ensures full enhancement with −3.3 V or −5 V logic control, eliminating need for level-shifting in many portable designs. |
Pinout & Package
Package: DFN2020MD-6 (SOT1220), 2.0 × 2.0 × 0.65 mm, leadless, exposed drain pad for thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6, 7 | Drain (D) | Five parallel drain terminals connected to exposed thermal pad - provides low-inductance current path and primary heat transfer to PCB. |
| 3 | Gate (G) | Single gate input with 5.4 Ω internal gate resistance - limits dV/dt-induced shoot-through in high-speed switching. |
| 4, 8 | Source (S) | Two source terminals - forms low-impedance return path for load current and reference node for gate drive. |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOSFET architecture | Delivers 24 mΩ RDS(on) in 2 × 2 mm footprint - reduces board area vs. SO-8 or TSOP-6 alternatives by >70 %. |
| Exposed drain pad | Enables 3.5 W peak power handling via 6 cm² PCB copper - eliminates need for external thermal vias in most portable layouts. |
| Tin-plated side pads | Supports automated optical solder inspection (AOI) - improves manufacturing yield in high-volume mobile device assembly. |
| Ultra-thin 0.65 mm profile | Meets Z-height constraints in slim smartphones and ultrabooks where component thickness ≤0.7 mm is mandatory. |
Applications
| USB-C Power Delivery Switch | SSD Main Power Switch |
|---|---|
|
Use Scenario: High-side power switch controlling 5–20 V input to USB-C PD controller and port power path. IC Role / Device Role: P-channel load switch isolating upstream power during fault or sleep mode. Use Value: 24 mΩ RDS(on) limits voltage drop to <120 mV at 5 A, preserving PD negotiation margin and reducing thermal stress on FR4 PCB. |
Use Scenario: Main 3.3 V/5 V power rail switch for NVMe SSD modules in laptops and tablets. IC Role / Device Role: Battery- or adapter-sourced high-side switch enabling hot-plug and power sequencing. Use Value: −1.5 V VGS(th) ensures clean turn-on with 3.3 V GPIO, while 150 °C Tj rating sustains operation during burst write workloads. |
| Portable DC-DC Converter High-Side Switch | Smartphone Charging Path Controller |
|
Use Scenario: Synchronous rectifier or high-side switch in buck converter output stage for PMIC auxiliary rails. IC Role / Device Role: Fast-switching P-channel FET managing energy transfer with QG(tot) = 30–45 nC. Use Value: Low QGD (6.3 nC) minimizes Miller-induced delay, enabling stable 1–2 MHz switching without gate driver complexity. |
Use Scenario: Reverse-current protection and charging enable/disable between battery and USB input in smartphone PMIC subsystems. IC Role / Device Role: Load switch preventing battery discharge into faulty or disconnected chargers. Use Value: −1 µA IDSS leakage at −30 V ensures <1 µA standby current - critical for multi-week shelf-life in always-on devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2053LSD-13 | RDS(on) = 32 mΩ @ −4.5 V; larger TSOP-6 package (3.05 × 1.65 mm); higher QG (52 nC) | Less suitable for 2 × 2 mm space-constrained layouts; requires stronger gate drive for same switching speed | Preferred when −4.5 V gate drive is standard and thermal pad area exceeds 6 cm² |
| SI2301DS-T1-BE3 | RDS(on) = 90 mΩ @ −4.5 V; SOT-23 package; no exposed drain pad; lower power rating (0.71 W) | Limited to ≤1.5 A continuous loads; unsuitable for >2 A charging paths or DC-DC high-side use | Acceptable only for low-current bias rails where size and cost outweigh thermal performance |
Compared with DMN2053LSD-13 and SI2301DS-T1-BE3, PMPB27EPZ delivers superior thermal performance per unit area, lower RDS(on) at logic-level drive, and tighter VGS(th) distribution - making it the optimal choice for high-density, high-current portable power switches where PCB real estate and thermal headroom are constrained.
Availability
PMPB27EPZ is available at Aetrix Electronics and suitable for USB-C PD power path management, NVMe SSD main rail switching, and smartphone charging circuitry requiring stable component supply, consistent parametric performance, and long-term lifecycle support.
Supply support for PMPB27EPZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.
PMPB27EPZ belongs to Nexperia's TrenchMOS portfolio - engineered specifically for high-efficiency, space-constrained power management in battery-powered portable electronics, emphasizing low RDS(on), thermal robustness, and logic-level compatibility.
FAQ
What is the maximum continuous drain current for PMPB27EPZ at 100 °C ambient?
The maximum continuous drain current is −3.9 A at Tamb = 100 °C with VGS = −10 V, as specified in the limiting values table. This reflects derating due to thermal resistance; actual usable current depends on PCB copper area and airflow. With 6 cm² drain pad, junction temperature remains within 150 °C limit at this condition.
Does PMPB27EPZ have integrated ESD protection?
No, PMPB27EPZ does not include on-die ESD protection diodes. It meets HBM Class 1B (≥500 V) per JESD22-A114, but external TVS or RC filtering is required for USB or connector-facing applications. The gate oxide is rated for ±20 V VGS, so transient overvoltage beyond that risks permanent damage.
Can PMPB27EPZ be used in synchronous rectification?
It is not recommended for synchronous rectification due to absence of body diode optimization (e.g., low Qrr, soft recovery) and lack of reverse recovery time specification. Its body diode VSD is −0.8 to −1.2 V at −1.9 A, indicating standard silicon diode behavior - suitable for freewheeling but inefficient in high-frequency SR topologies.
What is the recommended reflow profile for DFN2020MD-6 packaging?
Nexperia specifies JEDEC J-STD-020-compliant reflow with peak temperature of 260 °C for ≤30 seconds. The footprint in Figure 19 defines 0.33 mm stencil aperture for six 0.25 × 0.35 mm solder lands, and solder paste volume must ensure void-free thermal pad attachment - insufficient paste causes delamination and thermal failure under 1.7 W load.
PMPB27EPZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- -
- Configuration:
- -
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
PMPB27EPZ FAQ
1.How can I place an order for PMPB27EPZ through Aetrix?
Please submit a Request for Quotation (RFQ) for PMPB27EPZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMPB27EPZ reliable?
The price and inventory of PMPB27EPZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB27EPZ is usually 5 days.
3.What payment methods are accepted for PMPB27EPZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB27EPZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMPB27EPZ?
PMPB27EPZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMPB27EPZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMPB27EPZ?
For technical support, including PMPB27EPZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB27EPZ requirements.
6.How does Aetrix verify that PMPB27EPZ is sourced from the original manufacturer or authorized distributors?
All PMPB27EPZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB27EPZ meets industry standards.
7.What is the process for return or replacement of PMPB27EPZ?
All PMPB27EPZ units undergo pre-shipment inspection (PSI). If there is an issue with PMPB27EPZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMPB27EPZ part is unused and in its original packaging.
Return procedure for PMPB27EPZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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