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Nexperia USA Inc. PMPB33XN,115
- Part No.:
- PMPB33XN,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
PMPB33XN,115.pdf
- Description:
- MOSFET N-CH 30V 4.3A DFN2020MD-6
- Quantity:
- Payment:
- Shipping:
Inventory:2,830
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Product details
Overview
PMPB33XN from Nexperia is a 30 V single N-channel Trench MOSFET in DFN2020MD-6 (SOT1220) package, designed as a high-efficiency charging switch and power management device for portable electronics. It delivers RDS(on) = 37 mΩ at VGS = 4.5 V and ID = 4.3 A, supports 5.5 A continuous drain current at 25 °C, and features an exposed drain pad for enhanced thermal conduction in space-constrained PCB layouts.
For engineers reviewing the PMPB33XN datasheet, PMPB33XN pinout, PMPB33XN application, or PMPB33XN equivalent, key selection criteria include its ultra-thin 2 × 2 × 0.65 mm leadless package, fast switching performance (tr = 17 ns, tf = 20 ns), low gate charge (QG(tot) = 5.1–7.6 nC), and thermal resistance Rth(j-sp) = 10–15 K/W to solder point - critical for battery-powered DC-DC converter and load-switch designs.
Technical Context
This MOSFET employs Trench MOSFET technology to achieve low on-resistance and fast switching with minimal gate drive requirements. Its gate threshold voltage (VGS(th)) ranges from 0.45 V to 1.2 V at 25 °C, enabling reliable turn-on with 2.5 V logic-level control, while maintaining robust 30 V drain-source breakdown rating under transient conditions.
The device integrates five drain terminals and two source terminals in a compact 6-pin DFN2020MD-6 footprint, with the exposed drain pad thermally connected to the PCB via a 6 cm² copper mounting area. This configuration reduces junction-to-solder-point thermal resistance and supports continuous operation up to 150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - defines safe operating voltage ceiling for battery-input circuits up to 12 V nominal systems with headroom for transients. |
| RDS(on) | 37 mΩ typical at VGS = 4.5 V, ID = 4.3 A, Tj = 25 °C - enables <170 mW conduction loss at 2 A load, critical for efficiency in portable power rails. |
| ID (continuous) | 5.5 A at Tamb = 25 °C, t ≤ 5 s - supports short-duration peak loads in USB-C PD or wireless charging control paths. |
| QG(tot) | 5.1–7.6 nC - determines gate driver strength requirement; enables efficient 1–2 MHz switching in synchronous buck converters. |
| tr/tf | 17 ns / 20 ns - minimizes switching transition losses and EMI generation in high-frequency power management stages. |
| Rth(j-sp) | 10–15 K/W - quantifies thermal path from junction to PCB solder point, enabling accurate junction temperature estimation without heatsinks. |
Pinout & Package
Package: DFN2020MD-6 (SOT1220), 2.0 × 2.0 × 0.65 mm, leadless, ultra-thin surface-mount package with exposed drain pad for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6, 7 | Drain (D) | Five parallel drain connections tied to exposed metal pad - maximizes current handling and thermal dissipation to PCB copper. |
| 3 | Gate (G) | Single gate input requiring low-charge drive; compatible with 1.8 V/3.3 V/5 V logic-level controllers. |
| 4, 8 | Source (S) | Two dedicated source terminals - reduce source inductance and improve stability in high-dI/dt switching applications. |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOSFET architecture | Enables 37 mΩ RDS(on) at 4.5 V gate drive - eliminates need for level-shifting in low-voltage battery management ICs. |
| Exposed drain pad | Reduces Rth(j-sp) to 10–15 K/W - allows >1.5 W power dissipation on standard FR4 without thermal vias or heatsinks. |
| Optical solder inspection pads | Tin-plated side terminals - enable automated optical inspection (AOI) of solder joints in high-volume portable device assembly. |
| Ultra-thin profile | 0.65 mm max height - fits beneath stacked batteries or within <1 mm Z-height modules for wearables and ultra-slim tablets. |
Applications
| Charging Switch in Smartphones | USB Power Delivery Load Switch |
|---|---|
|
Use Scenario: Controls battery charging path between USB-C port and Li-ion cell during adapter insertion/removal. IC Role / Device Role / Timing Role: High-side load switch managing bidirectional current flow with reverse-current blocking. Use Value: Low 37 mΩ RDS(on) limits voltage drop to <74 mV at 2 A, preserving charging efficiency and minimizing thermal rise in tight chassis spaces. |
Use Scenario: Enables/disables 5–20 V power rail to downstream peripherals in USB-C PD sink devices. IC Role / Device Role / Timing Role: Single N-channel high-side switch with fast 17 ns rise time for clean hot-plug sequencing. Use Value: 5.5 A rating and 30 V VDS support full USB PD 3.0 specification up to 100 W, while 0.65 mm profile accommodates multi-layer board stacking. |
| DC-DC Converter Synchronous Rectifier | Hard Disk Drive Power Gate |
|
Use Scenario: Replaces Schottky diode in buck converter output stage for improved efficiency in portable SSD power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by controller PWM signal with precise timing alignment. Use Value: QG(tot) = 5.1–7.6 nC and fast switching minimize gate drive loss and dead-time conduction loss, boosting converter efficiency by 2–3% at 2 A. |
Use Scenario: Isolates +5 V and +12 V power domains for HDD spindle motor and logic circuitry during sleep/wake transitions. IC Role / Device Role / Timing Role: Dual-rail power gate with independent control per voltage domain to prevent backfeed and leakage. Use Value: 100 µA max IDSS at 150 °C ensures <1 µW standby loss per rail, meeting enterprise HDD power budget constraints for idle states. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3020LSD-13 | RDS(on) = 20 mΩ @ 4.5 V but in larger TSOP-6 (3 × 3 mm); higher QG = 9.5 nC. | Better conduction loss but slower switching and less suitable for <2 mm² board area. | Select when lower RDS(on) outweighs size constraints and thermal design allows larger footprint. |
| SI2302DS-T1-BE3 | RDS(on) = 55 mΩ @ 4.5 V; SOT-23 package; no exposed drain pad; Rth(j-a) = 250 K/W. | Higher conduction loss and inferior thermal performance limit use to <0.5 W continuous loads. | Choose only for cost-sensitive, low-power applications where thermal margin is ample and board space is not constrained. |
Compared with DMN3020LSD-13 and SI2302DS-T1-BE3, PMPB33XN uniquely balances ultra-compact size, low RDS(on), fast switching, and superior thermal conduction - making it optimal for space- and efficiency-critical portable power switches where both footprint and thermal resistance must be minimized simultaneously.
Availability
PMPB33XN is available at Aetrix Electronics and suitable for charging switches in smartphones, USB-C PD load switching, and DC-DC converter synchronous rectification requiring stable component supply across high-volume consumer electronics production cycles.
Supply support for PMPB33XN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with manufacturing rooted in process innovation and automotive-grade quality systems.
The PMPB33XN belongs to Nexperia's TrenchMOS portfolio, engineered specifically for portable power management - emphasizing low RDS(on), fast switching, and ultra-thin packaging to meet stringent size and thermal demands of modern mobile devices.
FAQ
What is the maximum continuous drain current for PMPB33XN at 100 °C ambient temperature?
The PMPB33XN supports 2.7 A continuous drain current at Tamb = 100 °C with standard FR4 PCB mounting (6 cm² drain pad). This derating reflects thermal limitations under sustained high-temperature operation and is confirmed in Table 5 of the official datasheet.
Can PMPB33XN operate reliably with 2.5 V gate drive in battery-powered systems?
Yes - its gate threshold voltage (VGS(th)) is specified from 0.45 V to 1.2 V at 25 °C, and RDS(on) = 55–76 mΩ at VGS = 2.5 V and ID = 1 A. This enables functional switching down to 2.5 V logic, though conduction loss increases ~50% versus 4.5 V drive.
How does the DFN2020MD-6 package improve thermal performance over standard SOT-23?
The DFN2020MD-6 package uses an exposed drain pad soldered directly to PCB copper, achieving Rth(j-sp) = 10–15 K/W - over 15× better than SOT-23's typical Rth(j-a) ≈ 245 K/W. This allows >1.5× higher continuous power dissipation without thermal throttling.
Is PMPB33XN suitable for automotive infotainment power gating?
No - the PMPB33XN is not automotive-qualified. The datasheet explicitly states "Non-automotive qualified products" and excludes AEC-Q101 testing. For automotive applications, Nexperia offers automotive-grade equivalents such as PMXB33XP, which undergoes extended temperature and reliability validation.
PMPB33XN,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 47mOhm @ 4.3A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.6 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 505 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta), 8.3W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN2020MD-6
PMPB33XN,115 FAQ
1.How can I place an order for PMPB33XN,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMPB33XN,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMPB33XN,115 reliable?
The price and inventory of PMPB33XN,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB33XN,115 is usually 5 days.
3.What payment methods are accepted for PMPB33XN,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB33XN,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMPB33XN,115?
PMPB33XN,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMPB33XN,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMPB33XN,115?
For technical support, including PMPB33XN,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB33XN,115 requirements.
6.How does Aetrix verify that PMPB33XN,115 is sourced from the original manufacturer or authorized distributors?
All PMPB33XN,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB33XN,115 meets industry standards.
7.What is the process for return or replacement of PMPB33XN,115?
All PMPB33XN,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMPB33XN,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMPB33XN,115 part is unused and in its original packaging.
Return procedure for PMPB33XN,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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