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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMPB40ENAX

Name: PMPB40ENAX
Brand: Nexperia USA Inc.
SKU: PMPB40ENAX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMPB40ENAX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: PMPB40ENAX.pdf

Description:: PMPB40ENA - 60 V, N-CHANNEL TREN

Quantity:: RFQ Add To RFQ list

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Inventory:158,231

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Product details

Overview

PMPB40ENAX from NXP Semiconductors is a 60 V, 12.9 A N-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) package, optimized for low-side switching with 34 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C. It delivers high current density in ultra-thin 2 × 2 × 0.65 mm form factor, features an exposed drain pad for thermal conduction, and is AEC-Q101 qualified for automotive relay drivers and load switches.

For engineers reviewing the PMPB40ENAX datasheet, PMPB40ENAX pinout, PMPB40ENAX application, or PMPB40ENAX equivalent, key selection criteria include its 60 V V_DS, 12.9 A continuous drain rating at T_sp = 25 °C, 34 mΩ on-resistance, 12.1 nC total gate charge, and AEC-Q101 qualification for automotive-grade reliability in space-constrained power switching designs.

Technical Context

This MOSFET uses Trench MOSFET technology to achieve low R_DS(on) and fast switching performance, with gate threshold voltage (V_GS(th)) specified from 1.0 V to 3.0 V at I_D = 250 µA. Its dynamic characteristics include 23 ns rise time and 12 ns fall time under standard test conditions (V_DS = 30 V, I_D = 4.8 A, R_G(ext) = 6 Ω), supporting high-frequency switching in compact DC-DC and motor control stages.

The device integrates a built-in source-drain diode with V_SD = 0.9–1.2 V at I_S = 1.7 A and T_j = 25 °C, and exhibits robust avalanche capability (E_AS = 19 mJ unclamped). Thermal resistance from junction to solder point is 5–10 K/W, enabling efficient heat transfer via the exposed drain pad mounted on a 6 cm² copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; defines safe operating range in 48 V automotive and industrial bus applications.
I_D (continuous)	12.9 A at T_sp = 25 °C - Sustained current capability with standard PCB mounting; derates to 3 A at T_amb = 100 °C.
R_DS(on)	34 mΩ typ at V_GS = 10 V, I_D = 4.8 A, T_j = 25 °C - Low conduction loss enabling <1 W dissipation at 5 A, critical for thermally constrained modules.
Q_G(tot)	12.1 nC typ - Gate drive energy requirement; enables efficient 1 MHz-class switching with moderate gate driver strength.
V_GS(th)	1.7 V typ - Ensures reliable turn-on with 3.3 V logic-level gate drive; supports direct MCU GPIO control without level-shifting.
T_j max	150 °C - Junction temperature limit compatible with under-hood automotive environments and sealed industrial enclosures.
AEC-Q101	Qualified - Meets stress-test requirements for discrete semiconductors in automotive applications, including temperature cycling and HTRB.

Pinout & Package

DFN2020MD-6 (SOT1220) is a leadless, ultra-thin surface-mount package measuring 2.0 × 2.0 × 0.65 mm with an exposed drain pad on the bottom side for thermal management. The package features tin-plated side pads for optical solder inspection and is optimized for high-density PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6, 7	Drain (D)	Five parallel drain terminals connected to the exposed metal pad; provide low-inductance, high-current path and primary thermal conduction path to PCB.
3	Gate (G)	Single gate input terminal; requires controlled drive to avoid oscillation due to low gate resistance (1.1 Ω typ) and 612 pF input capacitance.
4, 8	Source (S)	Two source terminals forming the return path; define reference node for gate drive and enable Kelvin sensing in precision current monitoring configurations.

Key Features

Feature	Design Value
Trench MOSFET architecture	Enables 34 mΩ R_DS(on) in 2 × 2 mm footprint-reducing board area by >50% vs. comparable SO-8 devices while maintaining 60 V rating.
Exposed drain pad	Reduces R_th(j-sp) to 5–10 K/W-enabling 12.5 W total power dissipation with minimal heatsinking on FR4 PCBs.
AEC-Q101 qualification	Validated for automotive use including temperature cycling, HTRB, and ESD-eliminates need for additional qualification testing in Tier-1 modules.
Optical solder inspection compatibility	Tin-plated side pads allow automated AOI verification of solder joint integrity-critical for zero-defect manufacturing in safety-critical systems.
Low gate charge (12.1 nC)	Minimizes driver power loss and propagation delay-supports clean 20 ns-scale switching edges in high-efficiency synchronous rectifiers.

Applications

Automotive Relay Driver

Industrial Low-Side Load Switch

Use Scenario: Replacing electromechanical relays in body control modules for headlight, wiper, and HVAC actuation.

IC Role / Device Role / Timing Role: Low-side switch controlling 12 V/24 V loads up to 10 A; handles inductive kickback via integrated body diode and avalanche energy rating.

Use Value: Eliminates relay wear-out and contact bounce; reduces system weight by 70% and enables PWM dimming for adaptive lighting control.

Use Scenario: Power sequencing and fault-isolation in programmable logic controllers (PLCs) and sensor interface modules.

IC Role / Device Role / Timing Role: High-reliability load switch with fast turn-off (<35 ns combined td(off)+tf) for overcurrent protection response.

Use Value: Enables sub-100 µs fault shutdown-preventing damage to downstream analog front-ends during short-circuit events.

High-Speed Line Driver

DC-DC Converter Synchronous Rectifier

Use Scenario: Driving capacitive bus lines in CAN FD transceiver interfaces and isolated digital I/O backplanes.

IC Role / Device Role / Timing Role: Fast-switching buffer stage with 23 ns rise time and low output impedance (34 mΩ) to maintain signal edge integrity.

Use Value: Supports >5 Mbps data rates on 50 Ω lines with <10% overshoot-meeting ISO 11898-2 EMC requirements without external termination.

Use Scenario: Secondary-side synchronous rectification in 12 V–48 V isolated DC-DC converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: Efficient replacement for Schottky diodes; operated with gate timing synchronized to primary-side FET.

Use Value: Reduces conduction loss by 60% vs. 40 V Schottky-improving full-load efficiency from 92% to 94.5% in 300 W brick converters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	30 V rating, 2.6 mΩ R_DS(on), SO-8 package; higher current but lower voltage tolerance.	Not suitable for 48 V bus applications; limited to ≤30 V systems like USB PD or low-voltage motor drives.	Select only when V_DS < 30 V and board space allows SO-8; superior thermal mass but larger footprint.
PSMN2R0-30YLH	30 V, 2.0 mΩ, LFPAK56 package; 50% lower R_DS(on) but same voltage class and AEC-Q101 qualification.	Requires re-layout for 5.0 × 6.0 mm footprint; better for high-current, low-voltage battery management systems.	Prefer for 20+ A applications below 30 V where thermal performance outweighs size constraints.

Compared with DMN3026LSD-13 and PSMN2R0-30YLH, PMPB40ENAX uniquely balances 60 V capability, 2 × 2 mm footprint, and AEC-Q101 compliance-making it the only option for space-limited 48 V automotive switching where both voltage margin and thermal density matter.

Availability

PMPB40ENAX is available at Aetrix Electronics and suitable for automotive relay drivers, industrial low-side load switches, high-speed line drivers, and DC-DC converter synchronous rectifiers requiring stable component supply across production lifecycles.

Supply support for PMPB40ENAX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

PMPB40ENAX belongs to NXP's TrenchMOS portfolio-designed specifically for high-efficiency, high-reliability power switching in space-constrained automotive and industrial applications where thermal density and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum continuous drain current for PMPB40ENAX at 100 °C ambient temperature?

The maximum continuous drain current is 3 A at T_amb = 100 °C with device mounted on an FR4 PCB with single-sided copper and a 6 cm² drain pad. This derating reflects thermal limits imposed by R_th(j-a) ≈ 33–36 K/W under those conditions, not electrical degradation.

Does PMPB40ENAX support 3.3 V logic-level gate drive?

Yes-its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 3.0 V, with typical value 1.7 V at I_D = 250 µA. At V_GS = 3.3 V, R_DS(on) is approximately 50 mΩ (typ), enabling functional switching in logic-level applications, though 4.5 V or higher is recommended for lowest on-resistance.

How is thermal performance affected by PCB layout for PMPB40ENAX?

Thermal resistance from junction to ambient drops from ~235 K/W (standard FR4 footprint) to ~33 K/W when using a 6 cm² exposed drain pad with tin-plated copper. The exposed pad must be fully soldered and connected to internal ground/power planes via ≥6 thermal vias (0.3 mm diameter) to achieve rated 12.5 W power dissipation.

Is PMPB40ENAX pin-compatible with other DFN2020MD-6 MOSFETs?

No-pin assignment is specific to this device: pins 1/2/5/6/7 are drain, pin 3 is gate, and pins 4/8 are source. Other DFN2020MD-6 MOSFETs may differ in pin function (e.g., dual-source or gate-drain-swap variants); always verify pinout against the respective datasheet before layout or substitution.

PMPB40ENAX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 43mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 590 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.27W (Ta), 15W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: DFN2020MD-6

PMPB40ENAX FAQ

1.How can I place an order for PMPB40ENAX through Aetrix?

Please submit a Request for Quotation (RFQ) for PMPB40ENAX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMPB40ENAX reliable?

The price and inventory of PMPB40ENAX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB40ENAX is usually 5 days.

3.What payment methods are accepted for PMPB40ENAX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB40ENAX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMPB40ENAX?

PMPB40ENAX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMPB40ENAX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMPB40ENAX?

For technical support, including PMPB40ENAX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB40ENAX requirements.

6.How does Aetrix verify that PMPB40ENAX is sourced from the original manufacturer or authorized distributors?

All PMPB40ENAX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB40ENAX meets industry standards.

7.What is the process for return or replacement of PMPB40ENAX?

All PMPB40ENAX units undergo pre-shipment inspection (PSI). If there is an issue with PMPB40ENAX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMPB40ENAX part is unused and in its original packaging.

Return procedure for PMPB40ENAX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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