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Nexperia USA Inc. PMPB40SNA,115
- Part No.:
- PMPB40SNA,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
PMPB40SNA,115.pdf
- Description:
- MOSFET N-CH 60V 12.9A 6DFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,875
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Product details
Overview
PMPB40SNA,115 from NXP Semiconductors is a 60 V, 12.9 A N-channel Trench MOSFET in a DFN2020MD-6 (SOT1220) leadless package, optimized for low-side switching with 34 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C. It serves as a high-efficiency load switch in automotive and industrial power control circuits, qualified to AEC-Q101 and featuring an exposed drain pad for thermal performance.
For engineers reviewing the PMPB40SNA,115 datasheet, PMPB40SNA,115 pinout, PMPB40SNA,115 application, or PMPB40SNA,115 equivalent, key selection criteria include its 60 V VDS, 12.9 A continuous drain current, 34 mΩ on-resistance, AEC-Q101 qualification, and DFN2020MD-6 thermal-enhanced footprint for space-constrained PCB layouts.
Technical Context
This N-channel enhancement-mode MOSFET uses Trench MOSFET technology to achieve low gate charge (12.1–24 nC total) and fast switching (td(on) = 9 ns, tr = 23 ns), enabling high-frequency operation in DC-DC converters and motor drivers. Its gate threshold voltage (1.0–3.0 V) ensures reliable turn-on with standard 3.3 V or 5 V logic-level drive.
The device integrates a source-drain diode with VSD = 0.9–1.2 V at IS = 1.7 A and exhibits avalanche energy rating of 19 mJ (unclamped), supporting robust transient handling in inductive load switching. Thermal resistance from junction to solder point is 5–10 K/W under defined PCB mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 12 V/24 V automotive and industrial bus applications |
| ID (continuous) | 12.9 A at Tsp = 25 °C - Supports high-current low-side loads without external heatsinking on 6 cm² drain pad |
| RDS(on) | 34 mΩ typ at VGS = 10 V, ID = 4.8 A, Tj = 25 °C - Minimizes conduction loss in battery-powered and efficiency-critical systems |
| QG(tot) | 12.1–24 nC - Enables fast, low-loss switching with moderate gate driver strength (e.g., TC4427) |
| VGS(th) | 1.0–3.0 V - Compatible with 3.3 V microcontroller GPIOs for direct logic-level drive |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per JESD22 |
| Tj max | 150 °C - Allows operation in under-hood environments with derated power above 75 °C |
Pinout & Package
DFN2020MD-6 (SOT1220) is a 2.0 × 2.0 × 0.65 mm leadless, thermally enhanced plastic package with an exposed drain pad on the bottom side for optimal heat transfer to the PCB. The top surface features six solderable terminals with optical inspection capability via tin-plated side pads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6, 7 | Drain (D) | Five parallel drain terminals connected to internal die drain metallization and exposed bottom pad - collectively handle full current path and primary thermal conduction |
| 3 | Gate (G) | Single gate input terminal - requires controlled slew rate drive to minimize EMI and oscillation during switching |
| 4, 8 | Source (S) | Two source terminals tied to internal source metallization - provide low-inductance return path for gate drive and load current |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOSFET architecture | Enables lower RDS(on) and higher cell density vs planar MOSFETs - improves power density in compact designs |
| Exposed drain pad | Reduces Rth(j-sp) to 5–10 K/W - allows >12 W dissipation on FR4 with 6 cm² copper area, eliminating need for discrete heatsinks |
| Optical solder inspection pads | Tin-plated side terminals enable automated AOI verification - critical for automotive manufacturing traceability |
| AEC-Q101 qualification | Validated for automotive temperature range (−40 °C to +150 °C) and stress tests - supports ASIL-B system integration |
| Ultra-thin profile (0.65 mm) | Enables stacking or tight clearance in multi-layer modules - suitable for engine control units and ADAS sensor hubs |
Applications
| Automotive Relay Driver | Industrial Low-Side Load Switch |
|---|---|
Use Scenario: Replacing electromechanical relays in body control modules for headlight, wiper, and HVAC actuation. IC Role / Device Role / Timing Role: N-channel low-side switch controlling 12 V/24 V inductive loads with integrated flyback path via body diode. Use Value: Eliminates relay bounce, contact wear, and acoustic noise while reducing PCB area by >50% and enabling PWM dimming control. | Use Scenario: Powering solenoids, valves, and fans in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: High-reliability, thermally robust low-side switch interfacing microcontroller GPIOs to 24 V DC field loads. Use Value: Delivers 12.9 A continuous current with <34 mΩ on-resistance - reduces I²R loss to <4.3 W at full load, enabling fan-out without forced air cooling. |
| High-Speed Line Driver | Switching Power Supply Sync Rectifier |
Use Scenario: Driving terminated RS-485 or CAN FD bus lines in automotive gateway ECUs requiring fast edge rates. IC Role / Device Role / Timing Role: Fast-switching N-channel FET used in active termination or differential line driving circuitry. Use Value: 9 ns turn-on delay and 23 ns rise time support >25 Mbps data rates while maintaining signal integrity under ESD stress. | Use Scenario: Secondary-side synchronous rectification in isolated 60 W DC-DC converters for infotainment power supplies. IC Role / Device Role / Timing Role: Low-VDS replacement for Schottky diodes in forward or flyback topologies operating up to 300 kHz. Use Value: Reduces conduction loss by >40% vs 40 V Schottky (e.g., SB540), improving efficiency from 89% to 92.5% at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-side switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN601DWKQ-7 | 60 V, 10.5 A, RDS(on) = 40 mΩ @ 10 V; SOT-26 package; no AEC-Q101 qualification | Lacks automotive qualification and thermal performance - suited for commercial-grade consumer power supplies | Select when cost sensitivity outweighs AEC-Q101 requirement and board space permits larger SOT-26 footprint |
| IPD50N06S4L-12 | 60 V, 50 A, RDS(on) = 12.5 mΩ @ 10 V; TO-252 package; AEC-Q101 qualified | Higher current rating and lower RDS(on), but 3× larger footprint and 4× higher gate charge (48 nC) | Choose for >20 A loads where thermal margin is critical and layout space allows TO-252 mounting |
Compared with DMN601DWKQ-7, PMPB40SNA,115 delivers superior thermal performance and automotive qualification in half the footprint; versus IPD50N06S4L-12, it trades peak current capacity for ultra-compact size and faster switching - ideal for space-constrained, medium-power automotive nodes.
Availability
PMPB40SNA,115 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC outputs, and embedded power management systems requiring stable component supply across extended product lifecycles.
Supply support for PMPB40SNA,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
PMPB40SNA,115 belongs to NXP's TrenchMOS portfolio - engineered for high-efficiency, high-reliability power switching in automotive and industrial environments where thermal density, AEC-Q101 compliance, and small form factor are critical.
FAQ
What is the maximum continuous drain current for PMPB40SNA,115 at 100 °C ambient temperature?
The maximum continuous drain current is 3 A at Tamb = 100 °C with device mounted on an FR4 PCB having a 6 cm² drain pad. This derating reflects thermal limits under realistic board-level conditions - not absolute maximum ratings. At 25 °C ambient, the rating rises to 12.9 A with the same mounting configuration.
Does PMPB40SNA,115 require a gate resistor for safe operation?
A gate resistor is recommended to control dV/dt and prevent ringing, especially in high-speed switching applications. Typical values range from 5 Ω to 22 Ω depending on driver capability and EMI requirements. The device's 1.1 Ω intrinsic gate resistance and 12.1–24 nC total gate charge make it compatible with standard logic-level drivers like the TC4427 or UCC27517.
Can PMPB40SNA,115 be used in a high-side configuration?
No - PMPB40SNA,115 is an N-channel MOSFET with no integrated charge pump or bootstrap circuitry. High-side operation would require gate drive voltage exceeding the source potential, which this part cannot self-generate. It is designed exclusively for low-side switching where source is grounded or referenced to a fixed potential.
Is the DFN2020MD-6 package compatible with standard reflow soldering profiles?
Yes - the DFN2020MD-6 package is qualified for lead-free reflow per JEDEC J-STD-020. Recommended peak temperature is 260 °C with ≤60 seconds above 217 °C. Figure 19 in the datasheet provides exact footprint dimensions, including 0.65 mm pad width and 0.25 mm solder mask expansion, ensuring reliable void-free solder joints on production lines.
PMPB40SNA,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 12.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 43mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 24 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 612 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.7W (Ta), 12.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN2020MD-6
PMPB40SNA,115 FAQ
1.How can I place an order for PMPB40SNA,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMPB40SNA,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMPB40SNA,115 reliable?
The price and inventory of PMPB40SNA,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB40SNA,115 is usually 5 days.
3.What payment methods are accepted for PMPB40SNA,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB40SNA,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMPB40SNA,115?
PMPB40SNA,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMPB40SNA,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMPB40SNA,115?
For technical support, including PMPB40SNA,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB40SNA,115 requirements.
6.How does Aetrix verify that PMPB40SNA,115 is sourced from the original manufacturer or authorized distributors?
All PMPB40SNA,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB40SNA,115 meets industry standards.
7.What is the process for return or replacement of PMPB40SNA,115?
All PMPB40SNA,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMPB40SNA,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMPB40SNA,115 part is unused and in its original packaging.
Return procedure for PMPB40SNA,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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