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Nexperia USA Inc. PMPB43XPE,115
- Part No.:
- PMPB43XPE,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
PMPB43XPE,115.pdf
- Description:
- MOSFET P-CH 20V 5A DFN2020MD-6
- Quantity:
- Payment:
- Shipping:
Inventory:2,623
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Product details
Overview
PMPB43XPE from Nexperia is a single P-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) package, rated for −20 V drain-source voltage, −5 A continuous drain current at 25 °C, and 39 mΩ typical RDS(on) at VGS = −4.5 V - deployed as a high-efficiency charging switch in portable battery-powered systems.
For engineers reviewing the PMPB43XPE datasheet, PMPB43XPE pinout, PMPB43XPE application, or PMPB43XPE equivalent, this device is selected for compact power management where low on-resistance, ultra-thin SMD packaging, and 1 kV ESD protection are critical in space-constrained DC-DC and battery-switching circuits.
Technical Context
This P-channel MOSFET operates in enhancement mode with a gate-source threshold voltage of −0.68 V (typical), enabling turn-on with logic-level gate drive down to −1.8 V. Its trench architecture delivers low RDS(on) while maintaining robust safe operating area (SOA) up to 12 A peak drain current under 10 µs pulses.
The device features an exposed drain pad for thermal conduction and six-terminal leadless construction: five drain terminals and one source terminal share the same potential, with gate isolated on pin 3 - optimized for PCB heat spreading via a 6 cm² tin-plated copper mounting pad.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V - maximum blocking voltage for battery-side high-side switching in ≤20 V systems |
| RDS(on) | 39 mΩ (typ) @ VGS = −4.5 V, ID = −5 A - enables <195 mW conduction loss at full load |
| ID (cont) | −5 A @ Tamb = 25 °C - supports sustained current in portable power rails with FR4 PCB cooling |
| QG(tot) | 15.6 nC (typ) - ensures fast switching with low gate-drive energy in battery-charging control loops |
| Rth(j-sp) | 5–10 K/W - low junction-to-solder-point thermal resistance improves reliability under pulsed loads |
| VGS(th) | −0.68 V (typ) - allows direct interface with 1.8 V/2.5 V/3.3 V microcontroller GPIO without level shift |
| ESD Rating | 1 kV HBM - protects against handling-induced gate oxide damage during assembly |
Pinout & Package
Package: DFN2020MD-6 (SOT1220), 2.0 × 2.0 × 0.65 mm, leadless, thermally enhanced with exposed drain pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6, 7 | Drain (D) | Five parallel drain terminals connected to exposed metal pad - primary current path and thermal conduction path to PCB |
| 3 | Gate (G) | Single gate input - requires negative VGS for turn-on; sensitive to ESD; routed away from noisy traces |
| 4, 8 | Source (S) | Two source terminals tied to system ground or battery return - forms reference for gate drive and current sensing |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-thin DFN2020MD-6 package | 2.0 × 2.0 × 0.65 mm footprint - saves board space in slim mobile devices and wearables |
| Exposed drain pad | Direct thermal coupling to PCB copper - reduces junction temperature rise by >30 K vs. standard SO packages |
| Tin-plated side pads | 100 % solderable edges - enables automated optical inspection (AOI) of solder joint quality |
| 1 kV HBM ESD protection | Integrated gate oxide protection - eliminates need for external ESD diodes in handheld product designs |
| Trench MOSFET technology | Optimized cell density and channel geometry - achieves 39 mΩ RDS(on) at −4.5 V drive with low QG |
Applications
| Charging Switch | DC-DC Converter High-Side Switch |
|---|---|
|
Use Scenario: Controls battery charging path between USB input and Li-ion cell in smartphones and tablets. IC Role / Device Role / Timing Role: P-channel high-side switch enabling reverse-current blocking and load-disconnect functionality. Use Value: 39 mΩ RDS(on) minimizes voltage drop and power loss during 3 A–5 A charge currents, extending runtime and reducing thermal stress. |
Use Scenario: Serves as synchronous rectifier or high-side switch in buck converters for portable SoC power rails. IC Role / Device Role / Timing Role: Power FET in non-isolated step-down topology, driven by integrated controller or external gate driver. Use Value: Low QG(tot) (15.6 nC) and fast switching (tr = 38 ns) reduce switching losses at 1–2 MHz frequencies. |
| Battery-Powered Power Management | Hard Disk Drive Power Control |
|
Use Scenario: Enables/disables power to peripherals (e.g., Bluetooth module, sensors) in battery-operated IoT nodes. IC Role / Device Role / Timing Role: Load switch isolating downstream circuitry from main battery to prevent leakage and enable zero-power standby. Use Value: −0.68 V VGS(th) allows direct control from 1.8 V MCU outputs, eliminating level-shifter components. |
Use Scenario: Supplies controlled 5 V or 12 V power to HDD spindle motors and logic in portable computing storage modules. IC Role / Device Role / Timing Role: Inrush-limited power switch managing hot-plug sequencing and fault isolation. Use Value: 12.5 W Ptot (Tsp = 25 °C) and 12 A peak current support robust motor startup surge without thermal shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2011UFD-7 | RDS(on) = 42 mΩ @ −4.5 V; 2.0 × 2.0 × 0.65 mm DFN; no specified ESD rating | Lacks 1 kV HBM rating - requires external ESD protection in handheld designs | Preferred where cost sensitivity outweighs ESD robustness and thermal margin is sufficient |
| Si2301DDS-T1-GE3 | RDS(on) = 115 mΩ @ −4.5 V; SOT-23 package; higher RDS(on), larger footprint | Higher conduction loss limits use to ≤1 A loads; not suitable for 5 A charging paths | Selected only when legacy SOT-23 layout reuse is mandatory and current demand is sub-1.5 A |
Compared with DMN2011UFD-7 and Si2301DDS-T1-GE3, PMPB43XPE offers superior thermal performance via its exposed drain pad and best-in-class RDS(on) for 5 A loads, making it optimal for next-generation compact battery switches where ESD immunity and efficiency are co-prioritized.
Availability
PMPB43XPE is available at Aetrix Electronics and suitable for portable device charging switches, DC-DC converter high-side switching, and battery-powered peripheral power management requiring stable component supply across high-volume consumer electronics production.
Supply support for PMPB43XPE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.
PMPB43XPE belongs to Nexperia's TrenchMOS portfolio - engineered specifically for space-constrained, battery-driven applications demanding low RDS(on), ultra-thin packaging, and robust ESD tolerance without sacrificing thermal performance.
FAQ
What is the maximum continuous drain current for PMPB43XPE at 100 °C ambient?
The maximum continuous drain current is −3.1 A at Tamb = 100 °C with the device mounted on an FR4 PCB having a 6 cm² tin-plated drain pad. This derating reflects thermal limitations under sustained high-temperature operation and must be verified using the normalized current curve (Figure 2) in the datasheet.
Can PMPB43XPE be used with 1.8 V logic-level gate drive?
Yes - its typical VGS(th) is −0.68 V, and RDS(on) remains 56–79 mΩ at VGS = −1.8 V and ID = −3.7 A. This enables direct drive from 1.8 V microcontrollers without gate boosting, though conduction loss increases ~45 % versus −4.5 V drive.
Is the DFN2020MD-6 package compatible with standard reflow profiles?
Yes - Nexperia specifies a JEDEC J-STD-020-compliant reflow profile for the DFN2020MD-6 package. The recommended peak temperature is 260 °C, with a maximum time above 217 °C of 60–90 seconds. Footprint dimensions and solder paste stencil design are provided in Figure 19 of the datasheet.
Does PMPB43XPE include intrinsic body diode functionality?
Yes - it integrates a source-drain body diode with VSD = −0.7 to −1.2 V at IS = −1.9 A and Tj = 25 °C. This diode supports freewheeling in inductive loads and reverse-current blocking in battery backup paths, but is not optimized for high-frequency synchronous rectification.
PMPB43XPE,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 48mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23.4 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1550 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.7W (Ta), 12.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN2020MD-6
PMPB43XPE,115 FAQ
1.How can I place an order for PMPB43XPE,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMPB43XPE,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMPB43XPE,115 reliable?
The price and inventory of PMPB43XPE,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB43XPE,115 is usually 5 days.
3.What payment methods are accepted for PMPB43XPE,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB43XPE,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMPB43XPE,115?
PMPB43XPE,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMPB43XPE,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMPB43XPE,115?
For technical support, including PMPB43XPE,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB43XPE,115 requirements.
6.How does Aetrix verify that PMPB43XPE,115 is sourced from the original manufacturer or authorized distributors?
All PMPB43XPE,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB43XPE,115 meets industry standards.
7.What is the process for return or replacement of PMPB43XPE,115?
All PMPB43XPE,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMPB43XPE,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMPB43XPE,115 part is unused and in its original packaging.
Return procedure for PMPB43XPE,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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