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Nexperia USA Inc. PMPB48EP,115
- Part No.:
- PMPB48EP,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
PMPB48EP,115.pdf
- Description:
- MOSFET P-CH 30V 4.7A DFN2020MD-6
- Quantity:
- Payment:
- Shipping:
Inventory:2,154
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Product details
Overview
PMPB48EP from Nexperia is a single P-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) package, designed for high-efficiency power switching in space-constrained portable electronics. It delivers −30 V drain-source voltage rating, 40 mΩ typical RDS(on) at VGS = −10 V and ID = −4.7 A, and supports −6.8 A continuous drain current at 25 °C ambient - enabling compact charging switches and DC-DC converter high-side control.
For engineers reviewing the PMPB48EP datasheet, PMPB48EP pinout, PMPB48EP application, or PMPB48EP equivalent, this device is selected for low-voltage battery-powered systems requiring ultra-thin SMD packaging, exposed-drain thermal performance, and verified gate drive compatibility with 3.3 V/5 V logic-level controllers.
Technical Context
This P-channel MOSFET uses Trench technology to achieve low on-resistance and fast switching with minimal gate charge (QG(tot) = 17–26 nC). Its symmetrical drain-terminal layout (5× drain pins) and exposed thermal pad support high-current conduction while maintaining thermal resistance as low as 5–10 K/W to solder point.
The device operates with gate threshold voltage VGS(th) between −1.0 V and −2.5 V at 25 °C, enabling reliable turn-on from standard logic outputs. Its source-drain diode exhibits VSD = −0.8 to −1.2 V at −1.8 A, supporting synchronous rectification and reverse polarity protection functions without external diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −30 V maximum drain-source voltage - supports 24 V nominal bus and 30 V transient overvoltage tolerance in portable power rails. |
| RDS(on) | 40 mΩ typ @ VGS = −10 V, ID = −4.7 A, Tj = 25 °C - enables <150 mW conduction loss at 4.7 A, critical for thermally limited PCB layouts. |
| ID (cont) | −6.8 A max @ Tamb = 25 °C, t ≤ 5 s - defines short-term peak load capability for USB-C PD or battery charge surge handling. |
| QG(tot) | 17–26 nC - determines gate drive energy and switching speed; compatible with low-power microcontroller GPIOs driving ≤100 pF effective load. |
| Rth(j-sp) | 5–10 K/W junction-to-solder-point - enables direct thermal coupling to PCB copper pour, reducing junction temperature rise by >50 % vs. standard SO packages. |
| VGS(th) | −1.0 to −2.5 V @ ID = −250 µA - ensures full enhancement with 3.3 V logic high, eliminating need for level-shifting in low-voltage control paths. |
| Ciss | 860 pF - sets input capacitance for gate driver sizing and EMI filtering requirements in high-frequency DC-DC designs. |
Pinout & Package
DFN2020MD-6 (SOT1220) is a 2.0 × 2.0 × 0.65 mm leadless ultra-thin surface-mount package with an exposed drain thermal pad and tin-plated side terminals for optical solder inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6, 7 | Drain (D) | Five parallel drain connections provide low-inductance, high-current path and enhanced thermal conduction to PCB copper. |
| 3 | Gate (G) | Single gate terminal accepts standard logic-level drive; RG = 6 Ω typical enables fast turn-on/turn-off with minimal ringing. |
| 4, 8 | Source (S) | Two source terminals reduce source inductance and improve stability in high-dI/dt switching applications. |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOSFET architecture | Delivers 40 mΩ RDS(on) in 2 mm² footprint - 35 % lower on-resistance than planar equivalents at same voltage class. |
| Exposed drain thermal pad | Reduces Rth(j-sp) to 5–10 K/W - enables 1.7 W continuous dissipation on FR4 with 6 cm² copper, doubling power density vs. QFN alternatives. |
| Optically inspectable side pads | Tin-plated 100 % solderable terminals allow automated optical inspection (AOI) without X-ray, improving manufacturing yield in high-volume portable assembly. |
| Ultra-thin 0.65 mm profile | Enables stacking under batteries or displays in smartphones and wearables where Z-height is constrained to <1.0 mm. |
Applications
| Charging Switch for Portable Devices | DC-to-DC Converter High-Side Switch |
|---|---|
|
Use Scenario: Reverse-polarity protected USB input path in Bluetooth earbuds, smartwatches, and wireless chargers. IC Role / Device Role / Timing Role: P-channel high-side switch controlling battery charge enable/disable with fast turn-on (<25 ns) and low quiescent current leakage (<1 µA). Use Value: Eliminates need for external Schottky diode and reduces forward voltage drop by 0.3 V, extending runtime by up to 8 % in 3.7 V Li-ion systems. |
Use Scenario: Synchronous buck converter top switch in 5 V → 3.3 V point-of-load regulation for MCU subsystems. IC Role / Device Role / Timing Role: High-side P-MOSFET operating at 1–2 MHz with QGD/QGS ratio of 1.28 - minimizing shoot-through risk during dead-time transitions. Use Value: Achieves >92 % efficiency at 2 A load due to 40 mΩ RDS(on) and 860 pF Ciss, reducing thermal derating versus comparable 50 mΩ devices. |
| Power Management in Battery-Driven Devices | Hard Disk Drive Power Sequencing |
|
Use Scenario: Load switch for always-on sensor hubs in IoT edge nodes powered by coin-cell or Li-SOCl₂ batteries. IC Role / Device Role / Timing Role: Low-threshold (−1.5 V typ) P-MOSFET enabling controlled power-up with <100 nA gate leakage and <1 µA IDSS drain leakage. Use Value: Extends shelf life beyond 10 years by limiting standby current to <200 nA per switch, meeting stringent EN 50564 requirements. |
Use Scenario: Controlled 12 V rail enable for 2.5″ HDD spin-up in embedded industrial PCs and NAS enclosures. IC Role / Device Role / Timing Role: Robust −30 V rated switch handling 19 A peak inrush current (IDM), with thermal derating curve validated to 150 °C junction. Use Value: Prevents brown-out during motor startup by sustaining 6.8 A continuous current at 70 °C ambient - exceeding legacy TO-252 solutions by 2.3× power density. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LFG-7 | RDS(on) = 32 mΩ min @ −10 V but larger 2.5 × 2.5 mm DFN package; higher Ciss (1100 pF); no exposed drain pad. | Better on-resistance but 25 % larger footprint and 30 % higher thermal resistance - less suitable for ultra-thin wearables. | Select when lowest possible RDS(on) dominates over height and thermal constraints. |
| Si2301DDS-T1-GE3 | RDS(on) = 115 mΩ @ −4.5 V; smaller 1.6 × 1.6 mm package; lower QG (6.5 nC); no thermal pad. | Lower gate drive demand but significantly higher conduction loss - viable only for <1 A loads or intermittent duty. | Select for cost-sensitive, low-current applications where board area is more critical than thermal performance. |
Compared with DMN3026LFG-7 and Si2301DDS-T1-GE3, PMPB48EP uniquely balances ultra-thin profile (0.65 mm), exposed thermal pad, and 40 mΩ RDS(on) - making it optimal for space- and thermally constrained 3–5 A portable power switches where both height and efficiency are non-negotiable.
Availability
PMPB48EP is available at Aetrix Electronics and suitable for charging switches, DC-DC converters, and battery management systems requiring stable component supply across consumer, industrial, and medical portable equipment programs.
Supply support for PMPB48EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.
The PMPB48EP belongs to Nexperia's TrenchMOS portfolio - engineered specifically for portable power management, emphasizing ultra-thin packaging, low RDS(on), and robust thermal performance in battery-operated systems.
FAQ
What is the maximum continuous drain current for PMPB48EP at 100 °C ambient temperature?
The PMPB48EP supports −3 A continuous drain current at Tamb = 100 °C, as specified in Table 5 (Limiting values). This derating reflects thermal limits of the DFN2020MD-6 package on FR4 PCB with 6 cm² drain pad; actual current depends on PCB copper area and airflow.
Does PMPB48EP require a gate resistor for stable operation in 1 MHz DC-DC applications?
A gate resistor is recommended: the device's RG = 6 Ω internal gate resistance and QGD = 3.2 nC make it susceptible to ringing above 500 kHz without damping. A 5–10 Ω series resistor at the gate driver output suppresses oscillation while preserving <30 ns total switching time.
Can PMPB48EP be used in place of an N-channel MOSFET in high-side switching configurations?
Yes - its P-channel topology eliminates the need for a bootstrap circuit or high-side driver IC. With VGS(th) down to −1.0 V, it turns fully on with 0 V gate (source tied to input rail) and −3.3 V gate (driven by logic low), simplifying control in 3.3 V systems.
Is the exposed drain pad electrically isolated or must it be connected to the drain net?
The exposed drain pad is electrically connected to all drain terminals (pins 1, 2, 5, 6, 7) and must be soldered to a PCB copper pour tied to the drain net. Leaving it floating violates thermal and electrical specifications and risks premature failure due to localized heating.
PMPB48EP,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 4.7A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 26 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 860 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.7W (Ta), 12.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN2020MD-6
PMPB48EP,115 FAQ
1.How can I place an order for PMPB48EP,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMPB48EP,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMPB48EP,115 reliable?
The price and inventory of PMPB48EP,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB48EP,115 is usually 5 days.
3.What payment methods are accepted for PMPB48EP,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB48EP,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMPB48EP,115?
PMPB48EP,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMPB48EP,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMPB48EP,115?
For technical support, including PMPB48EP,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB48EP,115 requirements.
6.How does Aetrix verify that PMPB48EP,115 is sourced from the original manufacturer or authorized distributors?
All PMPB48EP,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB48EP,115 meets industry standards.
7.What is the process for return or replacement of PMPB48EP,115?
All PMPB48EP,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMPB48EP,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMPB48EP,115 part is unused and in its original packaging.
Return procedure for PMPB48EP,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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