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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMPB50ENEX

Name: PMPB50ENEX
Brand: Nexperia USA Inc.
SKU: PMPB50ENEX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMPB50ENEX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: PMPB50ENEX.pdf

Description:: MOSFET DFN2020MD-6

Quantity:: RFQ Add To RFQ list

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Inventory:2,500

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Product details

Overview

PMPB50ENEX from Nexperia is a 30 V, N-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) leadless ultra-thin SMD package, optimized for low-side load switching and high-speed line driving. It delivers R_DS(on) = 30 mΩ (typ) at V_GS = 10 V and I_D = 5.1 A, supports continuous operation up to T_j = 175 °C, and features ESD protection >2 kV HBM.

For engineers reviewing the PMPB50ENEX datasheet, PMPB50ENEX pinout, PMPB50ENEX application, or PMPB50ENEX equivalent, this device is selected for compact, thermally efficient low-voltage switching where side-wettable flanks enable optical solder inspection and reliable reflow yield on FR4 PCBs with 6 cm² drain pad.

Technical Context

This N-channel MOSFET uses Trench technology to achieve low on-resistance and fast switching performance. Its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 2.5 V at T_j = 25 °C, enabling robust turn-on with 4.5 V logic-level drive, while maintaining sub-µA gate leakage and <1 µA drain leakage at rated V_DS.

The device operates within absolute maximum ratings of V_DS = 30 V, V_GS = ±20 V, and continuous I_D = 5.1 A (T_amb = 25 °C, FR4, 6 cm² drain pad). Thermal resistance R_th(j-sp) is 11–14 K/W, confirming effective heat transfer to the solder point - critical for sustained power dissipation in space-constrained layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines safe operating range in 24 V rail and automotive body electronics applications.
R_DS(on)	30 mΩ (typ) at V_GS = 10 V, I_D = 5.1 A, T_j = 25 °C - Enables <150 mW conduction loss at 5 A, reducing thermal burden in battery-powered switches.
Q_G(tot)	6 nC (typ) - Low total gate charge minimizes driver power and enables <30 ns combined rise/fall time for PWM frequencies up to 1 MHz.
T_j(max)	175 °C - Extended junction temperature rating allows operation in under-hood or enclosed industrial enclosures without derating at ambient ≤100 °C.
R_th(j-sp)	11–14 K/W - Confirmed thermal path to solder point supports >3 W continuous power dissipation with minimal board-level copper.
V_GS(th)	1.5 V (typ) - Ensures reliable turn-on with standard 3.3 V or 5 V microcontroller GPIO, eliminating need for level-shifting circuitry.
C_iss	271 pF - Input capacitance compatible with low-power gate drivers; reduces Miller-induced shoot-through risk in half-bridge configurations.

Pinout & Package

DFN2020MD-6 (SOT1220) is a 2 mm × 2 mm × 0.65 mm leadless thermal-enhanced ultra-thin package with side-wettable flanks for automated optical solder inspection. The exposed drain terminals provide low-inductance, high-current paths and improved thermal coupling to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6, 7	Drain (D)	Five parallel drain terminals - collectively handle full current path and serve as primary thermal conduction path to PCB drain pad.
3	Gate (G)	Single gate input - low 6.6 Ω gate resistance enables fast, controlled switching with minimal external gate resistor.
4, 8	Source (S)	Two source terminals - provide low-impedance return path and reduce source inductance in high-di/dt switching.

Key Features

Feature	Design Value
Extended temperature operation	T_j = −55 °C to +175 °C - Supports deployment in harsh environments including industrial motor controls and automotive non-safety-critical modules.
Side-wettable flanks	100 % tin-plated terminal edges - Enables automated optical inspection (AOI) of solder joints without X-ray, improving manufacturing yield and traceability.
Trench MOSFET architecture	R_DS(on) × Q_G = 180 mΩ·nC (typ) - Optimized figure-of-merit for low-loss, high-frequency switching in DC-DC and load-switching topologies.
ESD robustness	>2 kV HBM - Eliminates need for external ESD protection in board-level designs handling human interface or connector hot-plug events.
Ultra-thin profile	0.65 mm max height - Enables use in ultra-low-profile consumer wearables and stacked PCB assemblies where Z-height is constrained.

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Replacing electromechanical relays in PLC I/O modules to improve reliability and lifetime.

IC Role / Device Role / Timing Role: Low-side switch controlling 24 V DC coil loads with 100 ms–1 s duty cycles.

Use Value: Eliminates contact bounce and wear-out failure modes; 30 mΩ R_DS(on) limits self-heating to <150 mW at 5 A, enabling solid-state replacement without heatsinking.

Use Scenario: Driving 50 Ω transmission lines in industrial fieldbus nodes (e.g., RS-485 fail-safe biasing).

IC Role / Device Role / Timing Role: Fast-turning active pull-down element synchronized with UART TX timing.

Use Value: 24 ns rise time and 6 ns fall time ensure clean edge integrity up to 10 Mbps; low C_oss (58 pF) minimizes signal reflection and distortion.

Low-Side Load Switch

Switching Circuit

Use Scenario: Power sequencing and fault-isolation for USB peripherals or sensor subsystems in portable medical devices.

IC Role / Device Role / Timing Role: Controlled ON/OFF path between 3.3 V/5 V supply and downstream load, with soft-start via gate RC.

Use Value: 1.5 V typical V_GS(th) ensures compatibility with 3.3 V MCU GPIO; 2 kV HBM ESD rating protects against handling discharge during assembly and field service.

Use Scenario: Synchronous rectification in buck converters for 12 V → 3.3 V point-of-load regulation.

IC Role / Device Role / Timing Role: High-side or low-side synchronous FET operating at 500 kHz–1 MHz with 10 V gate drive.

Use Value: 6 nC Q_G(tot) reduces gate driver losses; 30 mΩ R_DS(on) at 10 V yields >92 % efficiency at 3 A output, validated on FR4 with 6 cm² drain pad.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	R_DS(on) = 28 mΩ (typ) at V_GS = 10 V but higher Q_G = 12 nC; SO-8 package (larger footprint, no SWF)	Larger board area required; lacks side-wettable flanks for AOI; better suited for prototyping or legacy SO-8 layouts	Select when existing SO-8 footprint reuse is prioritized over miniaturization and automated inspection capability.
PSMN2R0-30YL	R_DS(on) = 2.0 mΩ (typ) at V_GS = 10 V but in larger LFPAK56 package; higher cost and thermal mass	Targeted at high-current (>20 A), high-reliability industrial motor drives - over-specified for ≤5 A applications	Choose only if system-level current demand exceeds 8 A or board-level thermal design requires >10 W dissipation capability.

Compared with DMN3026LSD-13 and PSMN2R0-30YL, PMPB50ENEX provides optimal balance of ultra-small size, AOI-ready packaging, and verified 5.1 A continuous capability - making it the preferred choice for space- and yield-sensitive production designs below 6 A.

Availability

PMPB50ENEX is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line drivers, low-side load switches, and switching circuits requiring stable component supply across industrial automation, medical instrumentation, and consumer electronics programs.

Supply support for PMPB50ENEX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering discrete, logic, and MOSFET solutions for automotive, industrial, and mobile markets.

The PMPB50ENEX belongs to Nexperia's TrenchMOS portfolio, engineered specifically for compact, thermally efficient low-voltage switching in space-constrained applications demanding high manufacturability and long-term supply stability.

FAQ

What is the maximum continuous drain current for PMPB50ENEX at 100 °C ambient?

At T_amb = 100 °C with device mounted on an FR4 PCB (single-sided copper, 6 cm² drain pad), the maximum continuous drain current is 3.2 A - derived from the normalized current derating curve (Figure 2) and confirmed in Table 5 Limiting Values. This reflects thermal equilibrium under steady-state conditions without forced airflow.

Does PMPB50ENEX support 3.3 V logic-level gate drive?

Yes - with V_GS(th) = 1.0–2.5 V (typ 1.5 V) and R_DS(on) = 39 mΩ (typ) at V_GS = 4.5 V and I_D = 4.2 A, the device fully enhances using standard 3.3 V GPIO. However, for lowest R_DS(on), 10 V drive is recommended; 4.5 V achieves ~85 % of optimal conduction performance.

How does the DFN2020MD-6 package improve thermal performance versus standard SOT-23?

The DFN2020MD-6 package reduces R_th(j-sp) to 11–14 K/W - nearly 3× lower than typical SOT-23 R_th(j-a) (~40 K/W) - by using five exposed drain terminals and direct thermal coupling to the PCB's copper pour. This enables 3.8 W power dissipation (5 s pulse) versus ~0.5 W for SOT-23, verified per Table 5 and Figure 1.

Is PMPB50ENEX qualified for automotive applications?

No - PMPB50ENEX is not AEC-Q101 qualified and is explicitly designated for industrial and consumer applications. Nexperia's legal disclaimers state that non-automotive qualified products are neither tested nor warranted for automotive use; automotive designs require parts explicitly marked "AEC-Q101" in their ordering code and data sheet.

PMPB50ENEX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 43mOhm @ 5.1A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 271 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.9W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DFN2020MD-6

PMPB50ENEX FAQ

1.How can I place an order for PMPB50ENEX through Aetrix?

Please submit a Request for Quotation (RFQ) for PMPB50ENEX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMPB50ENEX reliable?

The price and inventory of PMPB50ENEX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB50ENEX is usually 5 days.

3.What payment methods are accepted for PMPB50ENEX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB50ENEX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMPB50ENEX?

PMPB50ENEX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMPB50ENEX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMPB50ENEX?

For technical support, including PMPB50ENEX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB50ENEX requirements.

6.How does Aetrix verify that PMPB50ENEX is sourced from the original manufacturer or authorized distributors?

All PMPB50ENEX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB50ENEX meets industry standards.

7.What is the process for return or replacement of PMPB50ENEX?

All PMPB50ENEX units undergo pre-shipment inspection (PSI). If there is an issue with PMPB50ENEX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMPB50ENEX part is unused and in its original packaging.

Return procedure for PMPB50ENEX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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