Nexperia USA Inc. PMPB50XNX

Overview

PMPB50XN from Nexperia is a 110 V, N-channel enhancement-mode Trench MOSFET in DFN2020M-6 (SOT1220-2) package, designed for low-side switching in high-speed digital and power control circuits. It delivers 3.9 A continuous drain current at 4.5 V gate drive, with 50 mΩ typical R_DS(on) at 25 °C, fast 4.3 ns turn-on delay, and operates up to 150 °C junction temperature - deployed in relay drivers and industrial load-switching applications.

For engineers reviewing the PMPB50XN datasheet, PMPB50XN pinout, PMPB50XN application, or PMPB50XN equivalent, key selection criteria include its 110 V V_DS, low 1 V typical V_GS(th), thermal resistance of 64 K/W (junction-to-solder point), 6.7 nC total gate charge, and compatibility with 4.5 V logic-level microcontroller outputs.

Technical Context

This MOSFET uses Trench process technology to achieve low R_DS(on) and fast switching with minimal gate charge. Its 6-terminal DFN2020M-6 package integrates five drain terminals and one source terminal on the bottom side, enabling high-current capability and efficient heat dissipation through the solder pad.

The device features a 1.4 V maximum gate-source threshold voltage, ensuring reliable turn-on with standard 3.3 V/5 V logic, and includes an integrated body diode with 36 ns reverse recovery time and 12.8 nC recovered charge - critical for synchronous rectification and inductive load handling.

Key Specifications

Pinout & Package

DFN2020M-6 (SOT1220-2) is a leadless, thermally enhanced ultra-thin surface-mount package measuring 2.0 × 2.0 × 0.65 mm, with exposed drain paddle for direct PCB thermal coupling. Five drain terminals (Pins 1, 2, 5, 6, 7) and one source terminal (Pin 4) are arranged in a symmetrical layout; Pin 3 is the gate.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Compared with DMN3026LSD-13 and PSMN2R0-30YLH, PMPB50XN uniquely balances 110 V capability, 4.5 V logic compatibility, and compact DFN2020M-6 packaging - making it optimal for space-constrained 48–90 V industrial controls where gate drive simplicity and transient robustness are essential.

Availability

PMPB50XN is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side load switches, and switching power supplies requiring stable component supply across extended product lifecycles.

Supply support for PMPB50XN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and automotive-grade components.

The PMPB50XN belongs to Nexperia's TrenchMOS portfolio - engineered specifically for industrial and consumer power switching applications demanding low gate charge, fast switching, and robust thermal performance in miniature packages.

FAQ

What is the maximum continuous drain current for PMPB50XN under standard PCB conditions?

The maximum continuous drain current is 3.9 A at T_amb = 25 °C, measured with the device mounted on an FR4 PCB using single-sided copper, tin-plated traces, and a 6 cm² mounting pad for the drain. At 100 °C ambient, this derates to 2.3 A per the datasheet's normalized current curve.

Can PMPB50XN be driven directly by a 3.3 V microcontroller GPIO?

Yes - with a typical V_GS(th) of 1.0 V and maximum of 1.4 V, the PMPB50XN fully enhances at 3.3 V gate drive, delivering its specified 50 mΩ R_DS(on). No level shifter is needed, though a 10–22 Ω series gate resistor is recommended to dampen ringing.

Does PMPB50XN include an integrated body diode, and what are its key parameters?

Yes - it features a monolithic source-drain body diode with 1.2 V maximum forward voltage at 1.5 A, 36 ns reverse recovery time, and 12.8 nC recovered charge at 50 V V_DS. These values are measured with V_GS = 4.5 V and are critical for evaluating performance in synchronous rectification or inductive switching.

What is the thermal resistance from junction to solder point, and how does it impact PCB layout?

R_th(j-sp) is 64 K/W (typical) when mounted on an FR4 PCB with a 6 cm² drain pad. This value assumes full thermal coupling between the exposed drain paddle and the copper area. To achieve this, the PCB must use ≥2 oz copper, thermal vias under the pad, and avoid solder mask over the drain land - otherwise, thermal performance degrades significantly.