Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PMPB8XNX

Part No.:
PMPB8XNX
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
6-UDFN Exposed Pad
Datasheet:
AetrixPMPB8XNX.pdf
Description:
MOSFET N-CH 20V 10.1A 6DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PMPB8XN from Nexperia is a 20 V, N-channel enhancement-mode Trench MOSFET in a DFN2020MD-6 (SOT1220) package, designed for low-side load switching with RDS(on) = 8.5 mΩ at VGS = 4.5 V and ID = 10.1 A, 14.3 A continuous drain current capability, and side-wettable flanks for automated optical solder inspection - deployed in high-speed line drivers and relay driver circuits.

For engineers reviewing the PMPB8XN datasheet, PMPB8XN pinout, PMPB8XN application, or PMPB8XN equivalent, key selection criteria include its 20 V VDS rating, sub-1 V gate threshold (VGS(th) = 0.65 V typ), thermal resistance Rth(j-sp) = 6–10 K/W to solder point, 20–30 nC total gate charge, and compatibility with 1.5–4.5 V logic-level drive in space-constrained PCB layouts.

Technical Context

This N-channel MOSFET uses Trench technology to achieve low on-resistance and fast switching (td(on) = 5 ns, tf = 15 ns) while maintaining robust safe operating area (SOA) up to 40 A peak drain current. Its drain-source breakdown voltage is fixed at 20 V with tight VGS(th) distribution (0.4–0.9 V).

The device integrates an exposed drain pad for direct thermal conduction to PCB copper, supported by validated thermal metrics: Rth(j-a) = 57–66 K/W on 6 cm² drain pad, and normalized power derating curves across −55 °C to 150 °C ambient.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 20 V - Maximum blocking voltage before avalanche; defines use in ≤20 V rail systems.
RDS(on) 8.5 mΩ @ VGS = 4.5 V, ID = 10.1 A, Tj = 25 °C - Enables <100 mW conduction loss at 10 A.
VGS(th) 0.65 V typ - Ensures reliable turn-on with 1.8 V GPIO or low-voltage microcontrollers.
QG(tot) 20–30 nC - Determines gate drive power and switching speed in PWM applications.
ID cont 14.3 A @ Tamb = 25 °C, t ≤ 5 s - Sustains high pulsed loads without thermal runaway on standard FR4.
Rth(j-sp) 6–10 K/W - Quantifies junction-to-solder-point thermal path efficiency for layout-aware thermal design.
Ciss 1696 pF - Impacts high-frequency gate drive impedance and EMI behavior in switching nodes.

Pinout & Package

DFN2020MD-6 (SOT1220) is a 2.0 × 2.0 × 0.65 mm ultra-thin leadless package with exposed drain pad, side-wettable flanks, and six terminals - optimized for automated optical inspection and high-power density PCB mounting.

Pin/Terminal Circuit Role Design Meaning
1, 2, 5, 6, 7 Drain (D) Five parallel drain terminals connected to internal die and exposed pad - provides low-inductance, high-current path and primary thermal conduction route.
3 Gate (G) Single control terminal requiring <30 nC charge; sensitive to ESD but compatible with 1.5–8 V logic drive.
4, 8 Source (S) Two source terminals tied to source metallization - forms return path for load current and reference for gate drive.

Key Features

Feature Design Value
Side-wettable flanks Enables AOI-compatible solder joint verification without X-ray - critical for automotive and industrial production traceability.
Exposed drain pad Reduces Rth(j-sp) to 6–10 K/W - allows >12 W power dissipation with minimal board area (6 cm² copper pad).
Trench MOSFET architecture Delivers 8.5 mΩ RDS(on) at 4.5 V drive - eliminates need for gate boosters in 3.3 V/5 V systems.
Low VGS(th) 0.65 V typical threshold - ensures full enhancement with 1.8 V I/O, supporting modern ultra-low-voltage MCUs.
Fast switching td(on) = 5 ns, tf = 15 ns - minimizes transition losses in high-frequency (>1 MHz) DC-DC and motor gate drivers.

Applications

Relay Driver High-Speed Line Driver

Use Scenario: Driving electromagnetic relays in PLC I/O modules where coil voltages range from 5 V to 24 V and require clean, fast turn-off to suppress back-EMF spikes.

IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current path; handles 10–15 A inductive surges with integrated body diode recovery.

Use Value: Sub-10 ns turn-on delay and 15 ns fall time minimize contact arcing; 20 V VDS safely clamps flyback transients.

Use Scenario: Transmitting differential digital signals across long PCB traces or cables in industrial fieldbus interfaces (e.g., RS-485 stubs, CAN stubs).

IC Role / Device Role / Timing Role: Active termination switch enabling dynamic impedance matching and slew-rate control on signal lines.

Use Value: 1696 pF Ciss and 195 pF Crss support stable 50 Mbps operation; low RDS(on) ensures <0.1 Ω termination accuracy.

Low-Side Load Switch Switching Power Circuit

Use Scenario: Enabling/disabling 12 V power rails to sensors, displays, or peripherals in battery-powered IoT edge nodes.

IC Role / Device Role / Timing Role: Controlled power path switch with logic-level gate drive and reverse-current blocking capability.

Use Value: 0.65 V VGS(th) enables direct MCU GPIO control; side-wettable flanks ensure zero-defect assembly in high-volume SMT lines.

Use Scenario: Synchronous rectification in buck converters or OR-ing diodes in redundant 5 V/3.3 V power domains.

IC Role / Device Role / Timing Role: High-efficiency replacement for Schottky diodes in DC-DC output stages operating up to 1 MHz.

Use Value: 8.5 mΩ RDS(on) cuts conduction loss by >60% vs. 400 mV Schottky; 40 A peak ID supports transient load steps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2020LFG-7 RDS(on) = 10.5 mΩ @ 4.5 V; QG = 23 nC; same DFN2020MD-6 package Slightly higher conduction loss; identical footprint and pinout Select when prioritizing supply chain diversity over marginal RDS(on) reduction.
SI2302DS-T1-BE3 RDS(on) = 50 mΩ @ 4.5 V; SOT-23 package; lower current rating (3 A) Not suitable for >5 A loads; lacks side-wettable flanks and thermal pad Only consider for cost-sensitive, low-current (<3 A), non-AOI production environments.

Compared with DMN2020LFG-7 and SI2302DS-T1-BE3, PMPB8XN delivers superior thermal performance via its exposed drain pad and lowest RDS(on) in the DFN2020MD-6 form factor - making it optimal for high-current, high-reliability, AOI-verified designs.

Availability

PMPB8XN is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line drivers, and low-side load switches requiring stable component supply, consistent parametric performance, and long-term manufacturability in industrial and embedded applications.

Supply support for PMPB8XN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-grade qualification.

PMPB8XN belongs to Nexperia's TrenchMOS portfolio - engineered specifically for space-constrained, thermally demanding power switching applications in industrial automation, consumer electronics, and communications infrastructure.

FAQ

What is the maximum continuous drain current for PMPB8XN at 100 °C ambient temperature?

The maximum continuous drain current for PMPB8XN is 6.4 A at Tamb = 100 °C, as specified in Table 5 (Limiting values) under conditions of VGS = 4.5 V and device mounted on FR4 PCB with 6 cm² drain pad. This reflects thermal derating due to reduced heat dissipation at elevated ambient temperatures.

Does PMPB8XN support logic-level gate drive from a 1.8 V microcontroller?

Yes - PMPB8XN has a typical gate threshold voltage of 0.65 V and guaranteed maximum of 0.9 V, enabling full enhancement with 1.8 V GPIO. Its RDS(on) remains 16 mΩ at VGS = 1.8 V and ID = 3.7 A (Table 7), confirming robust low-voltage operation.

How does the side-wettable flank feature improve manufacturing yield?

The side-wettable flanks on the DFN2020MD-6 package allow automated optical inspection (AOI) systems to verify solder fillet formation on all six terminals - eliminating reliance on X-ray for hidden-joint validation and reducing false-call rates in high-volume SMT lines by >95%.

What is the safe operating area (SOA) limitation for single-pulse operation?

At Tsp = 25 °C, the SOA curve (Figure 3) shows PMPB8XN supports 40 A peak drain current at VDS ≤ 5 V for pulse widths ≤10 µs. At VDS = 10 V, the limit drops to ~15 A for the same pulse width - defined by both thermal inertia and bondwire current capacity.

PMPB8XNX Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
10.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Rds On (Max) @ Id, Vgs:
12mOhm @ 10.1A, 4.5V
Vgs(th) (Max) @ Id:
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
1696 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1.9W (Ta), 12.5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DFN2020MD-6

PMPB8XNX FAQ

1.How can I place an order for PMPB8XNX through Aetrix?

Please submit a Request for Quotation (RFQ) for PMPB8XNX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMPB8XNX reliable?

The price and inventory of PMPB8XNX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB8XNX is usually 5 days.

3.What payment methods are accepted for PMPB8XNX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB8XNX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMPB8XNX?

PMPB8XNX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMPB8XNX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMPB8XNX?

For technical support, including PMPB8XNX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB8XNX requirements.

6.How does Aetrix verify that PMPB8XNX is sourced from the original manufacturer or authorized distributors?

All PMPB8XNX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB8XNX meets industry standards.

7.What is the process for return or replacement of PMPB8XNX?

All PMPB8XNX units undergo pre-shipment inspection (PSI). If there is an issue with PMPB8XNX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMPB8XNX part is unused and in its original packaging.

Return procedure for PMPB8XNX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PMPB8XNX Tags

  • PMPB8XNX
  • PMPB8XNX PDF
  • PMPB8XNX Datasheet
  • PMPB8XNX Specifications
  • PMPB8XNX Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PMPB8XNX
  • Buy PMPB8XNX
  • PMPB8XNX Price
  • PMPB8XNX Distributor
  • PMPB8XNX Supplier
  • PMPB8XNX Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER